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Article(id=1208361645580071927, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1208361635656352181, articleNumber=null, orderNo=14, doi=10.3981/j.issn.1000-7857.2025.05.00127, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1747843200000, receivedDateStr=2025-05-22, revisedDate=1751299200000, revisedDateStr=2025-07-01, acceptedDate=null, acceptedDateStr=null, onlineDate=1766025466580, onlineDateStr=2025-12-18, pubDate=1757692800000, pubDateStr=2025-09-13, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1762358400000, onlineIssueDateStr=2025-11-06, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1766025466580, creator=13701087609, updateTime=1774079915259, updator=sys-migrate, issue=Issue{id=1208361635656352181, tenantId=1146029695717560320, journalId=1146031591421210625, year='2025', volume='43', issue='17', pageStart='1', pageEnd='144', issueExtLink='null', onlineDate='null', pubDate='1757692800000', pubDateStr='2025-09-13', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1766025464214, creator='13701087609', updateTime=1774330860874, updator='13041195026', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1243196994169189037, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1208361635656352181, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1243196994169189038, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1208361635656352181, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=16, endPage=21, ext={EN=ArticleExt(id=1208361647303929868, articleId=1208361645580071927, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Two−dimensional materials lead the post−Moore era, columnId=1150494641880182997, journalTitle=Science & Technology Review, columnName=Commentary, runingTitle=null, highlight=null, articleAbstract=

Due to their excellent physical and chemical properties, two−dimensional materials have become potential stocks in the fields of integrated circuits, wearable technology, medical monitoring, etc. in the "post−Moore era", and have become a research hotspot in the current academic and industrial circles. Firstly, the bottlenecks and challenges faced in the post−Moore era are introduced. Secondly, the development history, preparation methods, ultra−thinness, adjustable band gap and ultra−high mobility of two−dimensional materials are introduced, and the application prospects of two−dimensional materials in chips, flexible sensors, energy storage, optoelectronic devices and other fields are analyzed. Then, the problems faced by two−dimensional materials in practical applications, such as large−scale preparation, high process complexity, and large differences between actual tests and expected theoretical values, are discussed. It is proposed to make up for these shortcomings through new atomic catalysts, roll−to−roll transfer technology, hydrogen passivation and other means to explore the potential of two−dimensional materials. Finally, the direction and path of the development of two−dimensional materials are summarized, emphasizing the importance of silicon−based transformation of two−dimensional materials, multi−dimensional innovation and industrialization promotion.

, authors=null, authorsList=Jiayu MA, Zhongheng SUN, Yuhan ZHAO, Hu ZHAO, Hao GUO, He TIAN, authorCompany=null, correspAuthors=Hao GUO, He TIAN, authorNote=null, correspAuthorsNote=null, copyrightStatement=All rights reserved. Unauthorized reproduction is prohibited., copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1208361648616747085, articleId=1208361645580071927, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=二维材料引领后摩尔时代, columnId=1150494642043760854, journalTitle=科技导报, columnName=科技评论, runingTitle=null, highlight=null, articleAbstract=

二维材料因其优异的物理化学特性，在“后摩尔时代”成为集成电路、可穿戴技术、医疗监测等领域的潜力股，变成当前学术界和产业界的研究热点。介绍了后摩尔时代面临的瓶颈和挑战，以及二维材料的发展历程、制备方法以及超薄性、带隙可调和超高的迁移率，分析了二维材料在芯片、柔性传感器、能源存储、光电器件等领域的应用前景。探讨了二维材料在实际应用中面临的规模化制备、工艺复杂度高、实际测试与预期理论值差异大等问题，提出了通过新型原子催化剂、卷对卷转移技术、氢钝化等手段来弥补这些不足，探讨了二维材料的潜力。总结了发展二维材料的方向路径，强调二维材料硅基化改造、多维度创新和产业化推进的重要性。

, authors=

马佳玉，硕士生，研究方向为二维材料柔性传感，电子信箱：

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郭浩（通信作者），教授，研究方向为微纳光量子传感与精密测量、微纳器件集成及应用，电子信箱：
田禾（共同通信作者），副教授，研究方向为基于二维材料（石墨烯、二硫化钼、黑磷等）的新型微纳电子器件等，电子信箱：
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马佳玉，硕士生，研究方向为二维材料柔性传感，电子信箱：

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Perspectives on the 2010 nobel prize in physics for graphene[J]. ACS Nano, 2010, 4(11): 6297- 6302., articleTitle=Perspectives on the 2010 nobel prize in physics for graphene, refAbstract=null), Reference(id=1242144468489543918, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/s41586-025-08711-x, pmid=null, pmcid=null, year=2025, volume=639, issue=8054, pageStart=354, pageEnd=359, url=null, language=null, rfNumber=2, rfOrder=1, authorNames=null, journalName=Nature, refType=null, unstructuredReference=Zhao J, Li L, Li P, et al. Realization of 2D metals at the ångström thickness limit[J]. Nature, 2025, 639(8054): 354- 359., articleTitle=Realization of 2D metals at the ångström thickness limit, refAbstract=null), Reference(id=1242144468544069871, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/s41586-021-04323-3, pmid=null, pmcid=null, year=2022, volume=603, issue=7900, pageStart=259, pageEnd=264, url=null, language=null, rfNumber=3, rfOrder=2, authorNames=null, journalName=Nature, refType=null, unstructuredReference=Wu F, Tian H, Shen Y, et al. Vertical MoS2 transistors with sub−1−nm gate lengths[J]. Nature, 2022, 603(7900): 259- 264., articleTitle=Vertical MoS2 transistors with sub−1−nm gate lengths, refAbstract=null), Reference(id=1242144468606984432, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=null, pmid=null, pmcid=null, year=2020, volume=34, issue=5, pageStart=652, pageEnd=659, url=null, language=null, rfNumber=4, rfOrder=3, authorNames=null, journalName=中国科学基金, refType=null, unstructuredReference=孙玲, 黎明, 吴华强, 等. 后摩尔时代的微电子研究前沿与发展趋势[J]. 中国科学基金, 2020, 34(5): 652- 659., articleTitle=后摩尔时代的微电子研究前沿与发展趋势, refAbstract=null), Reference(id=1242144468669898993, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/s41565-020-0724-3, pmid=null, pmcid=null, year=2020, volume=15, issue=7, pageStart=545, pageEnd=557, url=null, language=null, rfNumber=5, rfOrder=4, authorNames=null, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Liu C, Chen H, Wang S, et al. Two−dimensional materials for next−generation computing technologies[J]. Nature Nanotechnology, 2020, 15(7): 545- 557., articleTitle=Two−dimensional materials for next−generation computing technologies, refAbstract=null), Reference(id=1242144468745396466, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=null, pmid=null, pmcid=null, year=2012, volume=15, issue=7/8, pageStart=328, pageEnd=338, url=null, language=null, rfNumber=6, rfOrder=5, authorNames=null, journalName=Materials Today, refType=null, unstructuredReference=Liao L, Duan X. Graphene for radio frequency electronics[J]. Materials Today, 2012, 15(7/8): 328- 338., articleTitle=Graphene for radio frequency electronics, refAbstract=null), Reference(id=1242144468804116723, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1109/TTHZ.2015.2414297, pmid=null, pmcid=null, year=2015, volume=5, issue=3, pageStart=344, pageEnd=350, url=null, language=null, rfNumber=7, rfOrder=6, authorNames=null, journalName=IEEE Transactions on Terahertz Science and Technology, refType=null, unstructuredReference=Moon J S, Seo H C, Yang B, et al. Graphene and lateral heterostructure for THz imaging[J]. IEEE Transactions on Terahertz Science and Technology, 2015, 5(3): 344- 350., articleTitle=Graphene and lateral heterostructure for THz imaging, refAbstract=null), Reference(id=1242144468862836980, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/nnano.2010.89, pmid=null, pmcid=null, year=2010, volume=5, issue=7, pageStart=487, pageEnd=496, url=null, language=null, rfNumber=8, rfOrder=7, authorNames=null, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Schwierz F. Graphene transistors[J]. Nature Nanotechnology, 2010, 5(7): 487- 496., articleTitle=Graphene transistors, refAbstract=null), Reference(id=1242144468917362933, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=9, rfOrder=8, authorNames=null, journalName=null, refType=null, unstructuredReference=Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: A new direct−gap semiconductor[J]. Physical Review Letters, 2010, 105(13): 136805., articleTitle=null, refAbstract=null), Reference(id=1242144468976083190, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/nnano.2010.279, pmid=null, pmcid=null, year=2011, volume=6, issue=3, pageStart=147, pageEnd=150, url=null, language=null, rfNumber=10, rfOrder=9, authorNames=null, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Radisavljevic B, Radenovic A, Brivio J, et al. Single−layer MoS2 transistors[J]. Nature Nanotechnology, 2011, 6(3): 147- 150., articleTitle=Single−layer MoS2 transistors, refAbstract=null), Reference(id=1242144469034803447, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1021/nn301572c, pmid=null, pmcid=null, year=2012, volume=6, issue=6, pageStart=5635, pageEnd=5641, url=null, language=null, rfNumber=11, rfOrder=10, authorNames=null, journalName=ACS Nano, refType=null, unstructuredReference=Late D J, Liu B, Matte H S S R, et al. Hysteresis in single−layer MoS2 field effect transistors[J]. ACS Nano, 2012, 6(6): 5635- 5641., articleTitle=Hysteresis in single−layer MoS2 field effect transistors, refAbstract=null), Reference(id=1242144469093523704, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1021/nn501226z, pmid=null, pmcid=null, year=2014, volume=8, issue=4, pageStart=4033, pageEnd=4041, url=null, language=null, rfNumber=12, rfOrder=11, authorNames=null, journalName=ACS Nano, refType=null, unstructuredReference=Liu H, Neal A T, Zhu Z, et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility[J]. ACS Nano, 2014, 8(4): 4033- 4041., articleTitle=Phosphorene: An unexplored 2D semiconductor with a high hole mobility, refAbstract=null), Reference(id=1242144469148049657, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/nnano.2014.35, pmid=null, pmcid=null, year=2014, volume=9, issue=5, pageStart=372, pageEnd=377, url=null, language=null, rfNumber=13, rfOrder=12, authorNames=null, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Li L, Yu Y, Ye G J, et al. Black phosphorus field−effect transistors[J]. Nature Nanotechnology, 2014, 9(5): 372- 377., articleTitle=Black phosphorus field−effect transistors, refAbstract=null), Reference(id=1242144469210964218, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/s41467-023-39071-7, pmid=null, pmcid=null, year=2023, volume=14, issue=1, pageStart=3421, pageEnd=null, url=null, language=null, rfNumber=14, rfOrder=13, authorNames=null, journalName=Nature Communications, refType=null, unstructuredReference=Dai M, Wang C, Qiang B, et al. Long−wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity[J]. Nature Communications, 2023, 14(1): 3421., articleTitle=Long−wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity, refAbstract=null), Reference(id=1242144469282267387, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1021/ar5004434, pmid=null, pmcid=null, year=2015, volume=48, issue=1, pageStart=1, pageEnd=2, url=null, language=null, rfNumber=15, rfOrder=14, authorNames=null, journalName=Accounts of Chemical Research, refType=null, unstructuredReference=Dubertret B, Heine T, Terrones M. The rise of two−dimensional materials[J]. Accounts of Chemical Research, 2015, 48(1): 1- 2., articleTitle=The rise of two−dimensional materials, refAbstract=null), Reference(id=1242144469340987644, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1021/acs.chemrev.3c00389, pmid=null, pmcid=null, year=2023, volume=123, issue=17, pageStart=10750, pageEnd=10807, url=null, language=null, rfNumber=16, rfOrder=15, authorNames=null, journalName=Chemical Reviews, refType=null, unstructuredReference=He Q, Sheng B, Zhu K, et al. Phase engineering and synchrotron−based study on two−dimensional energy nanomaterials[J]. Chemical Reviews, 2023, 123(17): 10750- 10807., articleTitle=Phase engineering and synchrotron−based study on two−dimensional energy nanomaterials, refAbstract=null), Reference(id=1242144469403902205, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1038/s41467-025-57773-y, pmid=null, pmcid=null, year=2025, volume=16, issue=1, pageStart=2585, pageEnd=null, url=null, language=null, rfNumber=17, rfOrder=16, authorNames=null, journalName=Nature Communications, refType=null, unstructuredReference=Fan X, Yi J, Deng B, et al. 2D edge−seeded heteroepitaxy of ultrathin high−κ dielectric CaNb2O6 for 2D field−effect transistors[J]. Nature Communications, 2025, 16(1): 2585., articleTitle=2D edge−seeded heteroepitaxy of ultrathin high−κ dielectric CaNb2O6 for 2D field−effect transistors, refAbstract=null), Reference(id=1242144469471011070, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, doi=10.1021/acs.chemrev.4c00628, pmid=null, pmcid=null, year=2025, volume=125, issue=2, pageStart=786, pageEnd=834, url=null, language=null, rfNumber=18, rfOrder=17, authorNames=null, journalName=Chemical Reviews, refType=null, unstructuredReference=Gupta S, Zhang J J, Lei J, et al. Two−dimensional transition metal dichalcogenides: A theory and simulation perspective[J]. 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类别 代表材料 核心特性 应用方向
半金属 石墨烯（graphene） 零带隙、超高迁移率、高导热、良好的柔韧性 高频器件、柔性导电基底
半导体 TMDs（如MoS2、WS2、MoSe2） 可调直接带隙、强自旋−轨道耦合、谷极化效应 柔性晶体管、光电器件、量子计算
黑磷（BP） 强各向异性、可调带隙 高性能晶体管、红外光电器件
绝缘体 六方氮化硼（h−BN） 宽带隙、原子级平整表面、高化学稳定性 隔离层、隧穿势垒、二维器件衬底
新型功能材料 MXene（如Ti3C2Tx） 高导电性、亲水性、表面官能团可调 电磁屏蔽、柔性电极
), ArticleFig(id=1242144468023976169, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, language=CN, label=表1, caption=

常见二维材料、性质及应用方向

, figureFileSmall=null, figureFileBig=null, tableContent=
类别 代表材料 核心特性 应用方向
半金属 石墨烯（graphene） 零带隙、超高迁移率、高导热、良好的柔韧性 高频器件、柔性导电基底
半导体 TMDs（如MoS2、WS2、MoSe2） 可调直接带隙、强自旋−轨道耦合、谷极化效应 柔性晶体管、光电器件、量子计算
黑磷（BP） 强各向异性、可调带隙 高性能晶体管、红外光电器件
绝缘体 六方氮化硼（h−BN） 宽带隙、原子级平整表面、高化学稳定性 隔离层、隧穿势垒、二维器件衬底
新型功能材料 MXene（如Ti3C2Tx） 高导电性、亲水性、表面官能团可调 电磁屏蔽、柔性电极
), ArticleFig(id=1242144468120445162, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, language=EN, label=null, caption=null, figureFileSmall=null, figureFileBig=null, tableContent=
材料 迁移率/（cm2·V−1·s−1） 开关比（Ion/Ioff） 噪声谱密度/（nV·Hz−1/2） 典型应用
石墨烯 104~105 约102 约30 高速互连 RF 器件
MoS2 10~104 106~108 40~70 低功耗晶体管数字逻辑
黑磷 102~103 105~106 17~30 模拟电路光电传感
), ArticleFig(id=1242144468179165419, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1208361645580071927, language=CN, label=表2, caption=

典型二维材料的性能对比

, figureFileSmall=null, figureFileBig=null, tableContent=
材料 迁移率/（cm2·V−1·s−1） 开关比（Ion/Ioff） 噪声谱密度/（nV·Hz−1/2） 典型应用
石墨烯 104~105 约102 约30 高速互连 RF 器件
MoS2 10~104 106~108 40~70 低功耗晶体管数字逻辑
黑磷 102~103 105~106 17~30 模拟电路光电传感
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二维材料引领后摩尔时代
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马佳玉 1, 2 , 孙仲恒 1 , 赵禹涵 1 , 赵虎 3 , 郭浩 2, * , 田禾 1, *
科技导报 | 科技评论 2025,43(17): 16-21
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科技导报 |科技评论 2025 , 43 (17) : 16 -21
二维材料引领后摩尔时代
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马佳玉，硕士生，研究方向为二维材料柔性传感，电子信箱：

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马佳玉1, 2 , 孙仲恒1, 赵禹涵1, 赵虎3, 郭浩2, * , 田禾1, *
作者信息
  • 1. 清华大学集成电路学院，北京 100084
  • 2. 中北大学半导体与物理学院，太原 030051
  • 3. 浙江清华长三角研究院，嘉兴 314006
通讯作者:
郭浩（通信作者），教授，研究方向为微纳光量子传感与精密测量、微纳器件集成及应用，电子信箱：
田禾（共同通信作者），副教授，研究方向为基于二维材料（石墨烯、二硫化钼、黑磷等）的新型微纳电子器件等，电子信箱：
Two−dimensional materials lead the post−Moore era
Jiayu MA1, 2 , Zhongheng SUN1, Yuhan ZHAO1, Hu ZHAO3, Hao GUO2, * , He TIAN1, *
Affiliations
  • 1. School of Integrated Circuits, Tsinghua University, Beijing 100084, China
  • 2. School of Semiconductors and Physics, North University of China, Taiyuan 030051, China
  • 3. Yangtze Delta Region Institute of Tsinghua University, Jiaxing 314006, China
出版时间: 2025-09-13 doi: 10.3981/j.issn.1000-7857.2025.05.00127
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摘要
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二维材料因其优异的物理化学特性，在“后摩尔时代”成为集成电路、可穿戴技术、医疗监测等领域的潜力股，变成当前学术界和产业界的研究热点。介绍了后摩尔时代面临的瓶颈和挑战，以及二维材料的发展历程、制备方法以及超薄性、带隙可调和超高的迁移率，分析了二维材料在芯片、柔性传感器、能源存储、光电器件等领域的应用前景。探讨了二维材料在实际应用中面临的规模化制备、工艺复杂度高、实际测试与预期理论值差异大等问题，提出了通过新型原子催化剂、卷对卷转移技术、氢钝化等手段来弥补这些不足，探讨了二维材料的潜力。总结了发展二维材料的方向路径，强调二维材料硅基化改造、多维度创新和产业化推进的重要性。

二维材料  /  极薄结构  /  高迁移率  /  摩尔定律  /  集成电路  /  硅基技术

Due to their excellent physical and chemical properties, two−dimensional materials have become potential stocks in the fields of integrated circuits, wearable technology, medical monitoring, etc. in the "post−Moore era", and have become a research hotspot in the current academic and industrial circles. Firstly, the bottlenecks and challenges faced in the post−Moore era are introduced. Secondly, the development history, preparation methods, ultra−thinness, adjustable band gap and ultra−high mobility of two−dimensional materials are introduced, and the application prospects of two−dimensional materials in chips, flexible sensors, energy storage, optoelectronic devices and other fields are analyzed. Then, the problems faced by two−dimensional materials in practical applications, such as large−scale preparation, high process complexity, and large differences between actual tests and expected theoretical values, are discussed. It is proposed to make up for these shortcomings through new atomic catalysts, roll−to−roll transfer technology, hydrogen passivation and other means to explore the potential of two−dimensional materials. Finally, the direction and path of the development of two−dimensional materials are summarized, emphasizing the importance of silicon−based transformation of two−dimensional materials, multi−dimensional innovation and industrialization promotion.

2D materials  /  ultra−thin structure  /  high mobility  /  Moore's Law  /  integrated circuits  /  silicon−based technology
马佳玉, 孙仲恒, 赵禹涵, 赵虎, 郭浩, 田禾. 二维材料引领后摩尔时代. 科技导报, 2025 , 43 (17) : 16 -21 . DOI: 10.3981/j.issn.1000-7857.2025.05.00127
Jiayu MA, Zhongheng SUN, Yuhan ZHAO, Hu ZHAO, Hao GUO, He TIAN. Two−dimensional materials lead the post−Moore era[J]. Science & Technology Review, 2025 , 43 (17) : 16 -21 . DOI: 10.3981/j.issn.1000-7857.2025.05.00127
正文
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1 后摩尔时代的降临
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摩尔定律由英特尔联合创始人戈登•摩尔于1965年提出，核心是“集成电路上的晶体管数量每18~24个月翻倍，性能提升约50%，成本降低1/2”。摩尔时代集成电路一直以硅基半导体为核心，依赖于晶体管尺寸的持续微缩（从微米级到纳米级）来提升性能。然而，随着晶体管尺寸缩小至纳米级（如3 nm以下），硅基材料器件会逐渐出现量子隧穿效应加剧，电子可穿透栅氧化层（厚度仅1~2 nm）的势垒，形成量子隧穿电流，同时，也导致晶体管被短沟道效应主导，使晶体管的阈值电压失控，导致晶体管失去开关功能。此外，硅的热导率低，硅基芯片的功耗密度随集成度提升呈指数增长，晶体管密度提升到一定程度使得硅基芯片无法通过风冷、液冷等传统散热技术有效散热。
除上述所提到的由于物理极限带来的量子隧穿效应、短沟道效应以及散热难题而造成集成密度被限制外，在晶体管尺寸微缩的道路上，在经济成本上有制造与设计的双重压力。5 nm以下的先进制程依赖于单台设备超1.5亿美元的极紫外线（extreme ultra–violet，EUV）光刻机，且在5 nm以内的良品率提升有困难，制造7 nm的晶体管良品率约90%的情况下，5 nm的晶体管良品率不足80%，这导致单芯片的制造成本从28 nm的5000万美元增至3 nm的2亿美元以上。其次先进制程需要采用鳍式场效应晶体管（fin field−effect transistor，FinFET）、全环绕栅极晶体管（gate−all−around field−effect transistor，GAAFET）等复杂结构，设计仿真工具和验证的成本陡增，占比总成本超过60%，只有极个别大厂商才可承担如此高昂的成本。并且随着大数据时代的到来，人工智能大爆发，ChatGPT、DeepSeek等工具的出现，传统硅基芯片的算力增速（约1.5倍/代）已无法满足AI、自动驾驶、元宇宙等场景对实时性、低功耗、多模态处理的需求（如自动驾驶需毫秒级响应，AI训练需EFlops级算力）。像物联网，可穿戴设备这样的新兴应用需要芯片同时具备传感、计算、通信、储能等多功能的集合。在传统的SoC中，所有模块必须使用同一种工艺。SoC中的数字电路模块会希望使用先进制程以实现更好的集成度和更高的性能。而对于模拟信号模块，先进制程无法带来对集成度和性能的有效改善，因此对异质功能集成的需求变得迫切。
摩尔定律的“指数级增长”逐渐放缓甚至停滞，传统摩尔定律趋近失效。传统硅基技术的物理极限和新兴应用需求的爆发式增长之间的矛盾使集成电路进入一条新的发展路径，这是一条放弃以单纯依赖“缩小晶体管尺寸”来发展的道路，而转向材料、器件、集成以及系统等多维度的创新路线提高集成电路的性能，这一阶段被称为“后摩尔时代”。
2 二维材料能否成为后摩尔时代的天之骄子
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在后摩尔时代，科研人员针对硅基技术在微缩过程中面临的物理极限（如量子隧穿、短沟道效应、集成度天花板等）来筛选新的材料，可以实现集成电路性能的进一步提升。很快，科学家通过量子力学计算和材料基因组计划系统的筛选，将目光聚集到了潜力股二维材料身上。
二维材料是在三维空间中仅具有2个维度（长度和宽度）且可自由运动、厚度仅为单个或少数几个原子层的纳米级材料。2004年，安德烈•海姆和康斯坦丁•诺沃肖洛夫采用机械剥离法成功地从石墨中提取出单层石墨烯，他们也因这一成果获得了2010年的诺贝尔物理学奖[1]，这一重大突破使二维材料从此成为世界范围的研究热潮，许多学者又发现了更多其他种类的二维材料，如过渡金属二硫化物和MXene等。2025年，张广宇所带领的研究团队在中国科学院物理研究所实验室首次实现大面积二维金属材料的制备[2]，实现环境稳定的二维金属材料，为已存在20余年的二维材料家族补上了一块拼图，这一成果将为后摩尔时代带来重要意义。
为什么二维材料成为后摩尔时代最有潜力的天选之子呢？
首先，在三维材料中，载流子的运动多多少少会受到一定的限制，而理论上二维材料得天独厚的“二维”性质天然地满足量子限域的条件，它的能带结构可以通过调节层数、晶向、缺陷等参数来调控。然后，不同于硅基材料表面存在大量悬挂键容易与环境反应形成缺陷导致器件性能退化的情况，二维材料的表面平整无悬挂键，这样的特质可以避免因悬挂键导致的氧化反应，从而显著降低载流子散射。最后，二维材料制造的沟道厚度仅有几个原子层，栅极与沟道之间的势垒宽度将大幅压缩，通过高介电常数栅介质可提升势垒高度，而势垒宽度和高度可以影响量子隧穿的穿透概率，使用二维材料理论上可以将隧穿电流降低，达到硅基器件的千分之一以下。如图1所示，晶体管栅长从2003年硅基的几十纳米至2022年清华大学田禾团队使用石墨烯层的边缘作为栅电极的侧壁MoS2晶体管，具有原子薄的沟道和小于1 nm的物理栅长，二维材料可以突破传统晶体管沟道和物理栅长的极限[3]。
材料的制备决定了是否能获得高性能的二维材料，目前可以通过机械剥离、化学气相沉积（chemical vapor deposition，CVD）生长和液相剥离来制备原子级平整的二维材料样品。其中机械剥离可以获得单层或少层的石墨烯以及二硫化钼，但这种制备办法产量极低，只能获得微米级的二维材料，常用于基础研究；CVD生长通过优化前驱体和基底，可以制备厘米级别的单晶薄膜，比较接近实用化的要求；液相剥离通过球磨或者超声来剥离块状材料，可以获得克级样品，用于印刷电子等溶液加工的部分。
经过10余年发展，二维材料家族早已从最开始的石墨烯，拓展到二维金属、二维半导体、二维绝缘体、二维超导体等多元化的体系，见表1。
从具体二维材料的特性来看，二维材料的原子级厚度可抑制量子隧穿，解决微缩极限：单层的MoS2晶体管在3 nm沟道长度下的漏电流密度仅为硅基MOSFET的1/1000，使晶体管微缩至亚3 nm成为可能。二维材料黑磷的层数可调带隙可用来探测中红外光，实现硅基材料无法实现的功能，有望用于夜视成像。二维材料石墨烯表面光滑无悬挂键的特性使它室温的载流子迁移率达到硅的百倍，可用于制作高频晶体管，同时，无悬挂键的特质也使它的异质结界面电荷转移效率极高，可实现制作高效的光电探测器。二维h−BN作为绝缘层，可将多层二维晶体管堆叠，厚度仅为硅基器件的1/10，提升集成度，实现单芯片晶体管数可超1万亿。并且，很多二维材料如石墨烯的柔韧性和透光率极佳，可以与柔性基底完美贴合，非常适合用于柔性传感器制作可穿戴设备。
二维材料的材料特性以及在材料基础上的新架构使芯片设计从单一功能优化向系统级协同创新迈进，使得二维材料在后摩尔时代算力增长道路上具有革命性的意义[4−5]。
3 典型二维材料的性能对比与技术可行性
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典型二维材料的性能对比见表2。在性能对比方面，石墨烯因为载流子迁移率可达到（104~105） cm2/（V·s），而且噪声谱密度低至大约30 nV/Hz1/2，被看作是射频和高速模拟电路的理想材料，不过它本征的零带隙致使数字器件开关比仅仅在约102量级，很难契合低功耗逻辑开关的需求[6−8]。MoS2拥有大约1.8 eV的本征带隙，这使得它的场效应晶体管可实现106~108的高开关比，噪声水平大概为40~70 nV/Hz1/2，迁移率处于10~104 cm2/（V·s），在超低功耗FET与透明柔性光电传感器中有着天然的优势，但实际器件的表现大多时候受到金属接触电阻、界面陷阱以及大面积、均匀薄膜制备技术瓶颈的限制[9−11]。黑磷有可调的带隙和晶体各向异性，这让它在模拟电路与红外/可见光探测中有独特的优势，它的迁移率为102~103 cm2/（V·s）、开关比达到105~106、噪声水平约为17~30 nV/Hz1/2，然而，在空气中容易氧化的本质需要高性能的原位封装，如六方氮化硼（hexagonal boron nitride，h−BN）盖帽或者原子层沉积（atomic layer deposition，ALD）氧化铝以及真空转印工艺，批量制备还不成熟，限制了它的产业化进程[12−14]。
石墨烯、MoS2和黑磷这三者在性能指标与应用场景上各有长处：石墨烯更侧重于高速低噪声模拟与射频应用，MoS2强调高开关比与光电响应，黑磷则凭借带隙可调与各向异性契合特定探测与模拟需求。未来的研究应该聚焦于带隙工程、界面与接触优化、大尺度均匀生长及封装策略，在兼顾迁移率、功耗与环境稳定性的情况下，加速二维材料在可穿戴电子、物联网与高性能计算等领域的商业化应用。
4 二维材料是否有实力取代现有材料
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二维材料之所以被视为突破硅基物理极限的关键新材料，核心在于其原子级厚度的本征特性与量子效应主导的功能调控能力，能够针对性地解决硅基技术在微缩、功耗、集成和功能扩展等方面的瓶颈。作为“后摩尔时代”的核心新材料，二维材料的使用潜力是无限的，但美好希望到来的同时，二维材料在取代硅基的道路上仍然有一些关键障碍。
硅基材料的规模化制备非常成熟，可以成批地制造8英寸（0.203 m）或12英寸（0.3048 m）的硅片，而二维材料大面积、高质量生长却仍然困难重重[15]。使用机械剥离产量极低，只能停留于实验室使用，无法满足工业化。液相剥离样品成本低，但相应地，因溶剂和表面活性剂难以完全去除，导致制成的材料纯度也低，并且剥离过程中层数不可控，易产生多层片，难以应对制造高精度的器件。CVD是目前最常用的二维材料生长技术，CVD生长依赖金属基底表面催化，晶核会随机成核而导致晶界密集，缺陷密度变大，影响器件一致性；在块体材料的气相沉积中，层数也无法精准控制，影响材料均一性，并且生产黑磷过程中易使得原材料红磷在高温下产生有毒气体，影响工业化生产。此外，二维材料工艺集成具有高复杂度，与传统硅基电路集成时热膨胀系数差异巨大，高温工艺容易导致界面开裂；二维材料与硅基的界面容易引入氧化层，导致载流子散射，从而引起器件失效的问题；并且二维材料的表面特性、化学惰性、热稳定性与硅基差异显著，表面无悬挂键导致刻蚀时与光刻胶难以通过范德华力紧密贴合，致使图案分辨率变低，疏水性造成光刻胶显影后残留，继续影响后续刻蚀；原子级的厚度特性也使得二维材料难以通过传统方式有效掺杂离子，杂质仅分布在表面而难以扩散至沟道。这样的特性使得刻蚀、掺杂、金属化的工艺无法与传统硅基工艺兼容。
虽然二维材料理论上的预测性能特别好，但是在实际运用中，需克服各种环境的限制才能发挥出最大的性能，如黑鳞易在空气中氧化降解，操作时需要在惰性气体中；MoS2的空位形成缺陷，会明显降低材料迁移率和带隙的均匀性；二维材料在高功率场景下的多场耦合效应尚不明确，器件无法验证有效的可靠性。所以关于二维材料能否取代现有材料，还要打一个大大的问号，以目前的技术水平，还有一段长长的路要走。
5 二维材料的不足是否可以弥补
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二维材料凭借其独特的物理性质在多个领域展现出卓越的潜力，而在实际应用中这些材料在性能优化、稳定性以及适应性方面还展现出一些不足之处。随着原子级制造技术、复合材料技术、结构调控方法以及异构计算架构持续取得进展，科学家们通过不断的创新技术，努力地弥补这些不足，推动二维材料得到广泛应用。
针对二维材料在“后摩尔时代”大放异彩的道路上遇到的障碍，目前也在慢慢研发对应技术手段来改善。
材料制备过程中，通过新型的原子级催化剂来调控二维材料的成核和生长，如使用Ru单原子修饰铜基底，降低缺陷密度。在CVD生长过程中引入H2S、NH3等气体调节生长环境，可以实现对层数的精准控制。对于制造黑磷过程中高温造成的影响，则尝试利用低熔点熔盐作为溶剂，降低生长温度，从而抑制缺陷的生成[16]。
在晶圆级集成方面，卷对卷（roll−to−roll，R2R）转移技术通过柔性基底连续转移二维材料[17]，实现8英寸（0.203 m）晶圆的均匀覆盖，并且通过氢氟酸刻蚀SiO2/Si基底来获得原子级平整表面，提升二维材料转移质量。电子束光刻（electron beam lithography，EBL）代替传统光刻，可以实现二维材料的纳米级图案化；原子层刻蚀（atomic layer etching，ALE）代替传统刻蚀，通过交替脉冲刻蚀气体（如Cl2、BCl3）来实现对二维材料的原子级精度刻蚀，提高刻蚀成功率；分子层沉积（molecular layer deposition，MLD）的办法通过自限制反应在二维材料表面沉积Al2O3这样的超薄钝化层，降低二维材料对环境的敏感性。
对于稳定二维材料的电学和热学稳定性来说，使用等离子体氢化（H2等离子体处理）饱和二维材料的悬挂键的氢钝化技术，可以稳定二维材料的迁移稳定率，在二维器件下方集成高导热材料（如金刚石、h−BN），可以将界面热阻降至接近硅基水平，制备过程中通过微流道冷却或相变材料（phase change material，PCM）吸收局部热量，将器件结温控制在安全范围，解决制备过程中的热管理问题[18]。
从石墨烯的发现（2004年）到如今数百种二维材料的涌现，它们已成为后摩尔时代突破硅基物理极限、推动电子信息、能源存储、光电传感等领域革新的核心候选材料。尽管目前二维材料的规模化制备和工艺集成仍需优化，但其作为“后摩尔时代”核心新材料的地位已不可动摇，潜力无限，未来将推动集成电路从“硅基主导”向“二维材料主导”的范式转变。
6 二维材料在后摩尔时代的发展路径
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二维材料作为进入“后摩尔时代”的最大潜力股，目前很多应用和工艺还在探索过程中，后摩尔时代下二维材料将会朝什么方向发展呢？
后摩尔时代集成电路的发展将不再靠盲目扩大集成晶体管的规模，而是多维度地结合新材料、新结构、新集成等优化电路设计以及系统算法来解决集成电路功耗和效率问题[5]。所以二维材料与硅基材料的关系并非“取代”，而是互补。未来的发展方向应该会通过“异质集成”技术，将二维材料的优势与硅基的成熟工艺结合，形成“1+1>2”的协同效应。
未来的二维材料不会也无法直接替代硅基材料，而是作为“功能层”嵌入硅基芯片，先来解决目前硅基芯片的一些功能限制问题，补充硅基芯片中缺失的特性。针对AI推理、柔性显示、红外探测等特定场景，设计“二维−硅基混合芯片”，如融合硅基逻辑电路和二维材料制成的模拟电路的功能单元，让它们各自发挥自己的优势。在制备二维材料的过程中，推动二维材料的“硅基化”改造，调控二维材料的界面特性，使它更易与硅基工艺兼容。
二维材料在超高频、柔性电子、宽光谱探测、低功耗存算等场景中展现出硅基无法替代的优势，短期的未来，硅基材料将仍然主导主流芯片市场，而长期来看，二维材料将通过“异质集成”与硅基形成互补，共同推动电子信息技术的革新。二维材料不会完全取代硅基，但会成为后摩尔时代技术创新的核心驱动力之一。
基金
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  • 科技创新2030重大项目（2022ZD0209200）；国家自然科学基金项目（62374099）；北京市自然科学基金−小米创新联合基金项目（L233009）；北京市自然科学基金项目（L248104）
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参考文献 引证文献
排序方式：
1
Dresselhaus M S, Araujo P T. Perspectives on the 2010 nobel prize in physics for graphene[J]. ACS Nano, 2010, 4(11): 6297- 6302.
2
Zhao J, Li L, Li P, et al. Realization of 2D metals at the ångström thickness limit[J]. Nature, 2025, 639(8054): 354- 359.
3
Wu F, Tian H, Shen Y, et al. Vertical MoS2 transistors with sub−1−nm gate lengths[J]. Nature, 2022, 603(7900): 259- 264.
4
孙玲, 黎明, 吴华强, 等. 后摩尔时代的微电子研究前沿与发展趋势[J]. 中国科学基金, 2020, 34(5): 652- 659.
5
Liu C, Chen H, Wang S, et al. Two−dimensional materials for next−generation computing technologies[J]. Nature Nanotechnology, 2020, 15(7): 545- 557.
6
Liao L, Duan X. Graphene for radio frequency electronics[J]. Materials Today, 2012, 15(7/8): 328- 338.
7
Moon J S, Seo H C, Yang B, et al. Graphene and lateral heterostructure for THz imaging[J]. IEEE Transactions on Terahertz Science and Technology, 2015, 5(3): 344- 350.
8
Schwierz F. Graphene transistors[J]. Nature Nanotechnology, 2010, 5(7): 487- 496.
9
Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: A new direct−gap semiconductor[J]. Physical Review Letters, 2010, 105(13): 136805.
10
Radisavljevic B, Radenovic A, Brivio J, et al. Single−layer MoS2 transistors[J]. Nature Nanotechnology, 2011, 6(3): 147- 150.
11
Late D J, Liu B, Matte H S S R, et al. Hysteresis in single−layer MoS2 field effect transistors[J]. ACS Nano, 2012, 6(6): 5635- 5641.
12
Liu H, Neal A T, Zhu Z, et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility[J]. ACS Nano, 2014, 8(4): 4033- 4041.
13
Li L, Yu Y, Ye G J, et al. Black phosphorus field−effect transistors[J]. Nature Nanotechnology, 2014, 9(5): 372- 377.
14
Dai M, Wang C, Qiang B, et al. Long−wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity[J]. Nature Communications, 2023, 14(1): 3421.
15
Dubertret B, Heine T, Terrones M. The rise of two−dimensional materials[J]. Accounts of Chemical Research, 2015, 48(1): 1- 2.
16
He Q, Sheng B, Zhu K, et al. Phase engineering and synchrotron−based study on two−dimensional energy nanomaterials[J]. Chemical Reviews, 2023, 123(17): 10750- 10807.
17
Fan X, Yi J, Deng B, et al. 2D edge−seeded heteroepitaxy of ultrathin high−κ dielectric CaNb2O6 for 2D field−effect transistors[J]. Nature Communications, 2025, 16(1): 2585.
18
Gupta S, Zhang J J, Lei J, et al. Two−dimensional transition metal dichalcogenides: A theory and simulation perspective[J]. Chemical Reviews, 2025, 125(2): 786- 834.
2025年第43卷第17期
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doi: 10.3981/j.issn.1000-7857.2025.05.00127
  • 接收时间：2025-05-22
  • 首发时间：2025-12-18
  • 出版时间：2025-09-13
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  • 收稿日期：2025-05-22
  • 修回日期：2025-07-01
基金
科技创新2030重大项目（2022ZD0209200）；国家自然科学基金项目（62374099）；北京市自然科学基金−小米创新联合基金项目（L233009）；北京市自然科学基金项目（L248104）
作者信息
    1. 清华大学集成电路学院，北京 100084
    2. 中北大学半导体与物理学院，太原 030051
    3. 浙江清华长三角研究院，嘉兴 314006

通讯作者:

郭浩（通信作者），教授，研究方向为微纳光量子传感与精密测量、微纳器件集成及应用，电子信箱：
田禾（共同通信作者），副教授，研究方向为基于二维材料（石墨烯、二硫化钼、黑磷等）的新型微纳电子器件等，电子信箱：
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2种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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