Article(id=1242140344188478295, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1242140333585277757, articleNumber=null, orderNo=4, doi=10.3981/j.issn.1000-7857.2023.05.002, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1671724800000, receivedDateStr=2022-12-23, revisedDate=1675958400000, revisedDateStr=2023-02-10, acceptedDate=null, acceptedDateStr=null, onlineDate=1679884877203, onlineDateStr=2023-03-27, pubDate=1678636800000, pubDateStr=2023-03-13, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1679884877203, onlineIssueDateStr=2023-03-27, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1774078935902, creator=sys-migrate, updateTime=1774078935902, updator=sys-migrate, issue=Issue{id=1242140333585277757, tenantId=1146029695717560320, journalId=1146031591421210625, year='2023', volume='41', issue='5', pageStart='1', pageEnd='124', issueExtLink='null', onlineDate='null', pubDate='1678636800000', pubDateStr='2023-03-13', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=3, issueType=-1, specialIssue=null, createTime=1774078933375, creator='sys-migrate', updateTime=1774078933375, updator='sys-migrate', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=15, endPage=26, ext={EN=ArticleExt(id=1242140347632005366, articleId=1242140344188478295, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Progress of the interconnected copper electroplating in TSV (through silicon via) of advanced packaging, columnId=1242140346973496174, journalTitle=Science & Technology Review, columnName=Exclusive: Boost China's Strength in Manufacturing, runingTitle=null, highlight=null, articleAbstract=As Moore's law approaches to the limit, "More than Moore" for 2.5D/3D packaging is entering its historical arena. Through silicon via (TSV) is one of the important representatives in high-end electronics advanced packaging. This paper focuses on the copper plating process which realizes electrical interconnection in TSV technology and systematically summarizes the composition of the formula of copper plating solutions. The key difficulty of the copper plating process lies in the defect-free filling of TSV, and the selection of additives is particularly important. A guide for selection of electroplating solution for TSV metallization electroplating process is then provided. In addition, the external electric field and other process conditions imposed on the plating solution during the plating process will also affect the quality of filling vias. Therefore, TSV copper plating processes of the research teams at home and abroad are summarized for selection of a copper plating process. Finally, the characterization methods for studying the action mechanism of additives in electroplating solutions based on computational simulation and electrochemical testing are briefly summarized, and the progress and shortcomings of current research methods on additives in electroplating solution are discussed., authors=CHEN Kexin1,3, GAO Liyin1,2*, XU Zengguang2, LI Zhe1, LIU Zhiquan1,2, authorsList=CHEN Kexin, GAO Liyin, XU Zengguang, LI Zhe, LIU Zhiquan, authorCompany=1. Shenzhen Institute of Advanced Electronic Materials, Shenzhen 518103, China
2. Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
3. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=VSevxtvPuZYDvK4/LC+a/g==, pdfFileSize=1561161, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1242140346642146154, articleId=1242140344188478295, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=先进封装中硅通孔(TSV)铜互连电镀研究进展, columnId=1242140345681650525, journalTitle=科技导报, columnName=专题:制造强国建设, runingTitle=null, highlight=null, articleAbstract=随着摩尔定律接近极限,超摩尔定律的2.5D/3D封装登上历史舞台。硅通孔(through silicon via,TSV)是实现多维封装纵向互连的关键技术,也是目前高端电子制造领域的重要代表之一。概述了TSV铜互连的关键技术,包括铜电镀液、电镀工艺和研究方法。认为TSV电镀铜技术难点在于无缺陷填充,而添加剂是实现无缺陷填充的关键组分。归纳了TSV电镀铜的加速剂、抑制剂以及整平剂等多种添加剂,指出随着 TSV深宽比的不断提高,对电镀工艺提出了更高的要求。介绍了仿真计算、电化学测试等电镀液添加剂作用机理的研究手段。随着研究手段的不断升级,对添加剂作用机理研究更加深入透彻,确保了高深宽比TSV镀铜的无缺陷填充,进一步促进了先进封装的发展。, authors=谌可馨1,3,高丽茵1,2*,许增光2,李哲1,刘志权1,2, authorsList=谌可馨,高丽茵,许增光,李哲,刘志权, authorCompany=1. 深圳先进电子材料国际创新研究院,深圳 518103
2. 中国科学院深圳先进技术研究院,深圳 518055
3. 中国科学技术大学材料科学与工程学院,沈阳 110016, correspAuthors=null, authorNote=谌可馨,博士研究生,研究方向为微电子封装材料,电子信箱:kx.chen@siat.ac.cn, correspAuthorsNote=高丽茵(通信作者),副研究员,研究方向为微电子封装材料及服役可靠性,电子信箱:ly.gao@siat.ac.cn, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=Nyyut9l8FsizsP6v7zqtWg==, pdfFileSize=1561161, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=国家自然科学基金项目(62104243,62274172);广东省自然科学基金项目(2022A1515011485))}, authors=null, keywords=[Keyword(id=1242140346159801186, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=CN, orderNo=1, keyword=硅通孔), Keyword(id=1242140346235298660, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=CN, orderNo=1, keyword=电镀铜), Keyword(id=1242140346323379045, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=CN, orderNo=1, keyword=添加剂), Keyword(id=1242140346411459430, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=CN, orderNo=1, keyword=填孔工艺), Keyword(id=1242140346482762600, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=CN, orderNo=1, keyword=表征方法), Keyword(id=1242140347162243310, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=EN, orderNo=1, keyword=TSV), Keyword(id=1242140347233546479, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=EN, orderNo=1, keyword=copper electroplating), Keyword(id=1242140347309043952, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=EN, orderNo=1, keyword=additives), Keyword(id=1242140347388735730, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=EN, orderNo=1, keyword=filling process), Keyword(id=1242140347481010419, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140344188478295, language=EN, orderNo=1, keyword=characterization method)], refs=null, funds=null, companyList=null, figs=null, attaches=null, journal=Journal(id=1125356956822126595, delFlag=0, nameCn=科技导报, nameEn=Science & Technology Review, nameHistory1=null, nameHistory2=null, issn=1000-7857, eissn=, cn=11-1421/N, coden=null, periodic=3, language=CN, oaType=0, ccby=null, superviseOffice=null, ownerOffice=null, pubOffice=null, editorOffice=null, officeType=null, aims=null, clcCode=null, officeProv=null, officeCity=null, officeAddr=null, officeZip=null, officeEmail=null, officePhone=null, editDirector=null, officeDirector=null, officeDirectorPhone=null, officeStaffNum=null, officeEmpNum=null, coverPicUrl=wfghvu3bhh/dKxuZ+ucVHA==, journalPrice=null, startedYear=null, abbrevIsoEn=Sci Technol Rev, journalRemark=null, publicationField=null, createdTime=null, updatedTime=1774230116083, createdBy=null, updatedBy=13041195026, firstLetterCn=S, firstLetterEn=S, subjectCode=Natural Sciences, subjectName=自然科学, subjectCodeEn=Natural Sciences, subjectNameEn=null, picCn=wfghvu3bhh/dKxuZ+ucVHA==, picEn=yjSfclmpNm7ihn9NbTZ69g==, jcr=null, cjcr=null, exts=[JournalExt(id=1242774439910290156, language=CN, name=科技导报, nameHistory1=null, nameHistory2=null, managedBy=中国科学技术协会, sponsoredBy=中国科学技术协会, publishedBy=科技导报社, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.kjdb.org/CN/home, createdTime=1774230116107, updatedTime=1774230116107, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.kjdb.org/CN/column/column7.shtml, submissionAuthorUrl=https://kjdbauthor.cast.org.cn/webm, submissionEditorUrl=https://kjdbeditor.cast.org.cn/webm/, submissionReviewUrl=https://kjdbauthor.cast.org.cn/webm, submissionCeEditorUrl=https://kjdbeditor.cast.org.cn/webm/, submissionAeEditorUrl=https://kjdbeditor.cast.org.cn/webm/, option={"copyright":""}), JournalExt(id=1242774439960621805, language=EN, name=Science & Technology Review, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.kjdb.org/EN/home, createdTime=1774230116119, updatedTime=1774230116119, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.kjdb.org/EN/column/column7.shtml, submissionAuthorUrl=https://kjdbauthor.manuscriptcloud.com/login, submissionEditorUrl=https://kjdbeditor.manuscriptcloud.com/login, submissionReviewUrl=https://kjdbauthor.manuscriptcloud.com/login, submissionCeEditorUrl=https://kjdbeditor.manuscriptcloud.com/login, submissionAeEditorUrl=https://kjdbeditor.manuscriptcloud.com/login, option={"copyright":""})], databaseList=null, tenantJournalId=1146031591421210625, websiteList=[Website(id=1146104741081231361, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146031591421210625, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/kjdb/CN, language=CN, createTime=1751182263881, createBy=18614031015, updateTime=1751778001962, updateBy=18614031015, name=科技导报, tplId=1146099689490845704, title=科技导报, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1148021146403992296, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146104741081231361, code=articleTextType, value=kx, createTime=1751639170504, updateTime=1751639170504, creator=18614031015, updator=18614031015), WebsiteProps(id=1148021146378826469, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146104741081231361, code=banner, value=null, createTime=1751639170498, updateTime=1751639170498, creator=18614031015, updator=18614031015), WebsiteProps(id=1148021146366243556, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146104741081231361, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=9GHSf7eGlIPH0Tv/OOdstA==, createTime=1751639170495, updateTime=1751639170495, creator=18614031015, updator=18614031015), WebsiteProps(id=1148021146395603687, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146104741081231361, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1751639170502, updateTime=1751639170502, creator=18614031015, updator=18614031015), WebsiteProps(id=1148021146387215078, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146104741081231361, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1751639170500, updateTime=1751639170500, creator=18614031015, updator=18614031015)]), Website(id=1146105254833139715, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146031591421210625, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/kjdb/EN, language=EN, createTime=1751182386363, createBy=18614031015, updateTime=1753500121937, updateBy=18614031015, name=科技导报, tplId=1146101810881728533, title=Science & Technology Review, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1155838567709528217, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146105254833139715, code=articleTextType, value=kx, createTime=1753502988984, updateTime=1753502988984, creator=18614031015, updator=18614031015), WebsiteProps(id=1155838567692750998, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146105254833139715, code=banner, value=null, createTime=1753502988980, updateTime=1753502988980, creator=18614031015, updator=18614031015), WebsiteProps(id=1155838567688556693, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146105254833139715, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/EN/file/pic?fileId=9GHSf7eGlIPH0Tv/OOdstA==, createTime=1753502988979, updateTime=1753502988979, creator=18614031015, updator=18614031015), WebsiteProps(id=1155838567705333912, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146105254833139715, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/EN/file/pic, createTime=1753502988983, updateTime=1753502988983, creator=18614031015, updator=18614031015), WebsiteProps(id=1155838567701139607, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146105254833139715, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_en_623/, createTime=1753502988982, updateTime=1753502988982, creator=18614031015, updator=18614031015)])], journalTitle=科技导报, weixinUrl=null, journalUrl=null, iacademicId=null, status=1, seqNo=null, journalTitleEn=Science & Technology Review, journalPhotoCn=wfghvu3bhh/dKxuZ+ucVHA==, journalPhotoEn=yjSfclmpNm7ihn9NbTZ69g==, journalFirstLetter=S, journalRecommend=null, journalNew=null, journalCollection=1, jcrJf=null, cjcrJf=0.91, jcrJfStr=null, cjcrJfStr=null, submissionFirstDecision=null, sciSubjectClassification=null, casSubjectClassification=null, citeScore=null, totalCitationFrequency=null, icpCode=null, psCode=null, advertisingLicenseCode=null, copyrightInformation=null, country=null, option=, provinceCode=null, provinceName=null, collectFlag=false, interPubPlatform=null, interPubPlatformUrl=null), detailUrlCn=https://castjournals.cast.org.cn/joweb/kjdb/CN/10.3981/j.issn.1000-7857.2023.05.002, detailUrlEn=https://castjournals.cast.org.cn/joweb/kjdb/EN/10.3981/j.issn.1000-7857.2023.05.002, pdfUrlCn=https://castjournals.cast.org.cn/joweb/kjdb/CN/PDF/10.3981/j.issn.1000-7857.2023.05.002, pdfUrlEn=https://castjournals.cast.org.cn/joweb/kjdb/EN/PDF/10.3981/j.issn.1000-7857.2023.05.002, aliStartDate=null, aliEndDate=null, collectionFlag=false, citedCount=null, citedUrl=null, previewStatus=0, delFlag=0, hasFullText=0, orderTime=1678636800000, fullTextJson=null, articleText=null, reference=null)
收藏切换
先进封装中硅通孔(TSV)铜互连电镀研究进展
收藏切换
PDF下载
科技导报 | 专题:制造强国建设 2023,41(5): 15-26
收起
收藏切换
科技导报 | 专题:制造强国建设 2023, 41(5): 15-26
先进封装中硅通孔(TSV)铜互连电镀研究进展
全屏
谌可馨1,3,高丽茵1,2*,许增光2,李哲1,刘志权1,2
作者信息
    1. 深圳先进电子材料国际创新研究院,深圳 518103
    2. 中国科学院深圳先进技术研究院,深圳 518055
    3. 中国科学技术大学材料科学与工程学院,沈阳 110016

通讯作者:

高丽茵(通信作者),副研究员,研究方向为微电子封装材料及服役可靠性,电子信箱:ly.gao@siat.ac.cn
Progress of the interconnected copper electroplating in TSV (through silicon via) of advanced packaging
Affiliations
出版时间: 2023-03-13 doi: 10.3981/j.issn.1000-7857.2023.05.002
文章导航
收藏切换
随着摩尔定律接近极限,超摩尔定律的2.5D/3D封装登上历史舞台。硅通孔(through silicon via,TSV)是实现多维封装纵向互连的关键技术,也是目前高端电子制造领域的重要代表之一。概述了TSV铜互连的关键技术,包括铜电镀液、电镀工艺和研究方法。认为TSV电镀铜技术难点在于无缺陷填充,而添加剂是实现无缺陷填充的关键组分。归纳了TSV电镀铜的加速剂、抑制剂以及整平剂等多种添加剂,指出随着 TSV深宽比的不断提高,对电镀工艺提出了更高的要求。介绍了仿真计算、电化学测试等电镀液添加剂作用机理的研究手段。随着研究手段的不断升级,对添加剂作用机理研究更加深入透彻,确保了高深宽比TSV镀铜的无缺陷填充,进一步促进了先进封装的发展。
硅通孔  /  电镀铜  /  添加剂  /  填孔工艺  /  表征方法
As Moore's law approaches to the limit, "More than Moore" for 2.5D/3D packaging is entering its historical arena. Through silicon via (TSV) is one of the important representatives in high-end electronics advanced packaging. This paper focuses on the copper plating process which realizes electrical interconnection in TSV technology and systematically summarizes the composition of the formula of copper plating solutions. The key difficulty of the copper plating process lies in the defect-free filling of TSV, and the selection of additives is particularly important. A guide for selection of electroplating solution for TSV metallization electroplating process is then provided. In addition, the external electric field and other process conditions imposed on the plating solution during the plating process will also affect the quality of filling vias. Therefore, TSV copper plating processes of the research teams at home and abroad are summarized for selection of a copper plating process. Finally, the characterization methods for studying the action mechanism of additives in electroplating solutions based on computational simulation and electrochemical testing are briefly summarized, and the progress and shortcomings of current research methods on additives in electroplating solution are discussed.
TSV  /  copper electroplating  /  additives  /  filling process  /  characterization method
谌可馨,高丽茵,许增光,李哲,刘志权. 先进封装中硅通孔(TSV)铜互连电镀研究进展. 科技导报, 2023 , 41 (5) : 15 -26 . DOI: 10.3981/j.issn.1000-7857.2023.05.002
CHEN Kexin, GAO Liyin, XU Zengguang, LI Zhe, LIU Zhiquan. Progress of the interconnected copper electroplating in TSV (through silicon via) of advanced packaging[J]. Science & Technology Review, 2023 , 41 (5) : 15 -26 . DOI: 10.3981/j.issn.1000-7857.2023.05.002
2023年第41卷第5期
PDF下载
1718
742
引用本文
BibTeX
文章信息
doi: 10.3981/j.issn.1000-7857.2023.05.002
  • 接收时间:2022-12-23
  • 首发时间:2023-03-27
  • 出版时间:2023-03-13
补充材料
相关文章
文章信息
作者
出版历史
  • 收稿日期:2022-12-23
  • 修回日期:2023-02-10
基金
作者信息

通讯作者:

高丽茵(通信作者),副研究员,研究方向为微电子封装材料及服役可靠性,电子信箱:ly.gao@siat.ac.cn
参考文献
分享链接
https://castjournals.cast.org.cn/joweb/kjdb/CN/10.3981/j.issn.1000-7857.2023.05.002
分享至
全文二维码

扫描看全文

引用本文
BibTeX
本文的引用情况
2种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏