Article(id=1242135554976981491, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1242135527122608532, articleNumber=null, orderNo=19, doi=10.3981/j.issn.1000-7857.2016.23.011, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1462204800000, receivedDateStr=2016-05-03, revisedDate=1472313600000, revisedDateStr=2016-08-28, acceptedDate=null, acceptedDateStr=null, onlineDate=1482909876437, onlineDateStr=2016-12-28, pubDate=1481558400000, pubDateStr=2016-12-13, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1482909876437, onlineIssueDateStr=2016-12-28, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1774077794065, creator=sys-migrate, updateTime=1774077794065, updator=sys-migrate, issue=Issue{id=1242135527122608532, tenantId=1146029695717560320, journalId=1146031591421210625, year='2016', volume='34', issue='23', pageStart='1', pageEnd='148', issueExtLink='null', onlineDate='null', pubDate='1481558400000', pubDateStr='2016-12-13', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=3, issueType=-1, specialIssue=null, createTime=1774077787424, creator='sys-migrate', updateTime=1774077787424, updator='sys-migrate', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=106, endPage=114, ext={EN=ArticleExt(id=1242135559586521613, articleId=1242135554976981491, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Application research of carbon nanotube-based field-effect transistors:A review, columnId=1242116080374710456, journalTitle=Science & Technology Review, columnName=Articles, runingTitle=null, highlight=null, articleAbstract=Due to the scaling challenge faced by silicon transistors, carbon nanotube (CNTs), being one-dimensional quantum material, becomes a candidate for future transistors. Carbon nanotube field effect transistors (CNTFETs) can be realized in several geometrical configurations. This paper begins with a survey of typical CNTFET device geometries, the associated basic operating principles, and the unique properties. Then, it focuses on the recent development of several common CNTFETs, and describes in detail a series of technical innovations and performance improvements in terms of. structural and operating principles. Finally, some key problems about CNTFETs to be solved in future are summarized., authors=CHANG Chunrui¹, ZHAO Hongwei¹, DIAO Jiajia², AN Libao², authorsList=CHANG Chunrui, ZHAO Hongwei, DIAO Jiajia, AN Libao, authorCompany=1. College of Science, North China University of Science and Technology, Tangshan 063009, China;
2. College of Mechanical Engineering, North China University of Science and Technology, Tangshan 063009, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=IKvgr8VoL3/CjC4e0p/gCA==, pdfFileSize=5465287, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1242135557418066438, articleId=1242135554976981491, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=碳纳米管用于场效应晶体管的应用研究, columnId=1146540929516700224, journalTitle=科技导报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=传统硅晶体管在微小化方面遇到瓶颈，碳纳米管作为一维量子材料，成为未来晶体管最具潜力的候选者。介绍了几种典型的碳纳米管场效应晶体管结构的基本工作原理及独特性能；着重介绍了近年来几种常见的碳纳米管场效应晶体管，并结合其结构与工作原理，论述了一系列技术革新和性能改进；总结了碳纳米管场效应晶体管未来需解决的几个重要问题。, authors=常春蕊¹, 赵宏微¹, 刁加加², 安立宝², authorsList=常春蕊, 赵宏微, 刁加加, 安立宝, authorCompany=1. 华北理工大学理学院, 唐山 063009;
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