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Article(id=1304921725674741810, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1304921686403474081, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2026.06.013, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1749657600000, receivedDateStr=2025-06-12, revisedDate=1753372800000, revisedDateStr=2025-07-25, acceptedDate=null, acceptedDateStr=null, onlineDate=1789047183674, onlineDateStr=2026-09-10, pubDate=1781884800000, pubDateStr=2026-06-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1789047183674, onlineIssueDateStr=2026-09-10, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1789047183674, creator=13701087609, updateTime=1789047183674, updator=13701087609, issue=Issue{id=1304921686403474081, tenantId=1146029695717560320, journalId=1149653034449285133, year='2026', volume='59', issue='6', pageStart='1', pageEnd='188', issueExtLink='null', onlineDate='null', pubDate='1781884800000', pubDateStr='2026-06-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1789047174311, creator='13701087609', updateTime=1789118019323, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1305218831971021057, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1304921686403474081, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1305218831971021058, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1304921686403474081, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=133, endPage=140, ext={EN=ArticleExt(id=1304921725850902579, articleId=1304921725674741810, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Preparation and properties of MPPO/SiO2 composites with high thermal conductivity, low dielectric constant and dielectric loss, columnId=null, journalTitle=Insulating Materials, columnName=null, runingTitle=null, highlight=null, articleAbstract=

To address the bottleneck that thermal conductivity and dielectric properties are difficult to be synergistically enhanced for high-frequency and high-speed electronic packaging materials, silica (SiO2) was modified via surface grafting with methylvinyldimethoxysilane. The modified SiO2 (m-SiO2) particles were incorporated into thermosetting polyphenylene ether (MPPO) through solution blending, and m-SiO2/MPPO composites with low dielectric performance and high thermal conductivity were successfully prepared. The results demonstrate that the thermal conduction capability and thermal stability of the composites are remarkably improved, while its favorable dielectric properties are well maintained. At an m-SiO2 mass fraction of 70%, the thermal conductivity of the composite reaches 1.18 W/(m·K), which is 4.92 times higher than that of neat MPPO. Moreover, the dielectric constant is 3.11 at 10 GHz, and the dielectric loss factor is 0.004 4. Thermogravimetric analysis reveals that the thermal decomposition temperatures (at 5% and 10% weight loss) of the composite under nitrogen atmosphere are increased by 224.1℃ and 181.4℃, respectively compared with neat MPPO. It is verified that m-SiO2 can effectively inhibit the thermal degradation of polymer segments through bonding reaction with the resin matrix.

, authors=Yi LIU1, Li PAN1, Ling WANG1, Shuangwu HUANG1, Wenhong RUAN2, authorsList=Yi LIU, Li PAN, Ling WANG, Shuangwu HUANG, Wenhong RUAN, authorCompany=null, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1304921727482486854, articleId=1304921725674741810, tenantId=1146029695717560320, journalId=1149653034449285133, language=CN, title=高导热低介电改性聚苯醚/SiO2复合材料的制备和性能研究, columnId=null, journalTitle=绝缘材料, columnName=, runingTitle=null, highlight=null, articleAbstract=

针对高频高速电子封装材料中导热性能与介电性能难以协同提升的问题，本研究采用甲基乙烯基二甲氧基硅烷，对二氧化硅（SiO2）进行表面接枝改性，通过溶液混合法将改性的SiO2颗粒（m-SiO2）填充到热固性聚苯醚（MPPO）中，制备了兼具低介电和高导热的m-SiO2/MPPO复合材料。结果表明：m-SiO2/MPPO复合材料的导热性能和热稳定性能得到明显提升，同时保持了良好的介电性能，在m-SiO2质量分数为70%时，复合材料的导热系数达到1.18 W/(m·K)，是纯MPPO的4.92倍，10 GHz下的介电常数为3.11，介电损耗因子为0.004 4。热重分析显示，复合材料在氮气氛围中的5%和10%质量损失温度分别较纯MPPO分别提高了224.1℃和181.4℃，证明m-SiO2通过与树脂基体的键合反应有效抑制了聚合物链段的热降解。

, authors=刘意1, 潘丽1, 王玲1, 黄双武1, 阮文红2, authorsList=刘意, 潘丽, 王玲, 黄双武, 阮文红, authorCompany=null, correspAuthors=null, authorNote=

刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

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刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

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刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

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figureFileBig=G8PB3RDfAVRZNLwLsk+A7Q==, tableContent=null), ArticleFig(id=1304921730988925057, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1304921725674741810, language=CN, label=图9, caption=SiO2/MPPO复合材料的储能模量和力学损耗因子, figureFileSmall=YY9ARIT+GEJkvU5dOJqfxA==, figureFileBig=G8PB3RDfAVRZNLwLsk+A7Q==, tableContent=null), ArticleFig(id=1304921731064422530, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1304921725674741810, language=EN, label=Table 1, caption=

Thermal properties of m-SiO2/MPPO composites

, figureFileSmall=null, figureFileBig=null, tableContent=
样品T5%/℃T10%/℃T30%/℃THRI/℃800℃残留率/%
MPPO216.4270.9438.9171.524.4
40% m-SiO2/MPPO215.7430.2458.6177.152.1
50% m-SiO2/MPPO323.3433.5470.8201.863.5
60% m-SiO2/MPPO425.1442.9——71.7
70% m-SiO2/MPPO440.5452.3——79.8
80% m-SiO2/MPPO443.5459.7——86.2
), ArticleFig(id=1304921731139920003, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1304921725674741810, language=CN, label=表1, caption=

m-SiO2/MPPO复合材料的热性能

, figureFileSmall=null, figureFileBig=null, tableContent=
样品T5%/℃T10%/℃T30%/℃THRI/℃800℃残留率/%
MPPO216.4270.9438.9171.524.4
40% m-SiO2/MPPO215.7430.2458.6177.152.1
50% m-SiO2/MPPO323.3433.5470.8201.863.5
60% m-SiO2/MPPO425.1442.9——71.7
70% m-SiO2/MPPO440.5452.3——79.8
80% m-SiO2/MPPO443.5459.7——86.2
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高导热低介电改性聚苯醚/SiO2复合材料的制备和性能研究
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刘意 1 , 潘丽 1 , 王玲 1 , 黄双武 1 , 阮文红 2
绝缘材料 | 2026,59(6): 133-140
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绝缘材料 | 2026 , 59 (6) : 133 -140
高导热低介电改性聚苯醚/SiO2复合材料的制备和性能研究
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刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

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刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

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刘意1, 潘丽1, 王玲1, 黄双武1, 阮文红2
作者信息
  • 1安捷利（番禺）电子实业有限公司，广东　广州　511455
  • 2中山大学 化学学院，广东　广州　510006
作者简介:

刘意（1990-），男（汉族），湖北钟祥人，高级工程师，博士，主要从事功能高分子复合材料的研发及应用工作。

Preparation and properties of MPPO/SiO2 composites with high thermal conductivity, low dielectric constant and dielectric loss
Yi LIU1, Li PAN1, Ling WANG1, Shuangwu HUANG1, Wenhong RUAN2
Affiliations
  • 1AKM (Panyu) Electronic Industrial Co., Ltd., Guangzhou 511455, China
  • 2School of Chemistry, Sun Yat-sen University, Guangzhou 510006, China
出版时间: 2026-06-20 doi: 10.16790/j.cnki.1009-9239.im.2026.06.013
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摘要
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针对高频高速电子封装材料中导热性能与介电性能难以协同提升的问题，本研究采用甲基乙烯基二甲氧基硅烷，对二氧化硅（SiO2）进行表面接枝改性，通过溶液混合法将改性的SiO2颗粒（m-SiO2）填充到热固性聚苯醚（MPPO）中，制备了兼具低介电和高导热的m-SiO2/MPPO复合材料。结果表明：m-SiO2/MPPO复合材料的导热性能和热稳定性能得到明显提升，同时保持了良好的介电性能，在m-SiO2质量分数为70%时，复合材料的导热系数达到1.18 W/(m·K)，是纯MPPO的4.92倍，10 GHz下的介电常数为3.11，介电损耗因子为0.004 4。热重分析显示，复合材料在氮气氛围中的5%和10%质量损失温度分别较纯MPPO分别提高了224.1℃和181.4℃，证明m-SiO2通过与树脂基体的键合反应有效抑制了聚合物链段的热降解。

聚苯醚  /  复合材料  /  介电常数  /  介电损耗  /  高导热

To address the bottleneck that thermal conductivity and dielectric properties are difficult to be synergistically enhanced for high-frequency and high-speed electronic packaging materials, silica (SiO2) was modified via surface grafting with methylvinyldimethoxysilane. The modified SiO2 (m-SiO2) particles were incorporated into thermosetting polyphenylene ether (MPPO) through solution blending, and m-SiO2/MPPO composites with low dielectric performance and high thermal conductivity were successfully prepared. The results demonstrate that the thermal conduction capability and thermal stability of the composites are remarkably improved, while its favorable dielectric properties are well maintained. At an m-SiO2 mass fraction of 70%, the thermal conductivity of the composite reaches 1.18 W/(m·K), which is 4.92 times higher than that of neat MPPO. Moreover, the dielectric constant is 3.11 at 10 GHz, and the dielectric loss factor is 0.004 4. Thermogravimetric analysis reveals that the thermal decomposition temperatures (at 5% and 10% weight loss) of the composite under nitrogen atmosphere are increased by 224.1℃ and 181.4℃, respectively compared with neat MPPO. It is verified that m-SiO2 can effectively inhibit the thermal degradation of polymer segments through bonding reaction with the resin matrix.

PPO  /  composites  /  dielectric constant  /  dielectric loss  /  high thermal conductivity
刘意, 潘丽, 王玲, 黄双武, 阮文红. 高导热低介电改性聚苯醚/SiO2复合材料的制备和性能研究. 绝缘材料, 2026 , 59 (6) : 133 -140 . DOI: 10.16790/j.cnki.1009-9239.im.2026.06.013
Yi LIU, Li PAN, Ling WANG, Shuangwu HUANG, Wenhong RUAN. Preparation and properties of MPPO/SiO2 composites with high thermal conductivity, low dielectric constant and dielectric loss[J]. Insulating Materials, 2026 , 59 (6) : 133 -140 . DOI: 10.16790/j.cnki.1009-9239.im.2026.06.013
正文
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0　引言
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随着高频通信、物联网、AI、智能驾驶等新兴技术的快速发展，高频信号传输要求材料具有低介电常数（Dk）和介电损耗因子（Df），而设备小型化导致单位面积功率密度升高，需要同步提升材料的导热性能以应对热积累问题[1-2]。聚合物基复合材料凭借其优异的绝缘性能、耐化学性、热稳定性、可加工性能，成为高频电路基板的关键材料。目前常见的聚合物包括聚四氟乙烯（PTFE）[3]、环氧树脂（EP）[4]、聚酰亚胺（PI）[5-6]、聚苯醚（PPO）[7]等，其中PPO具有优异的介电性能（Dk≈2.45，Df≈0.002）、耐热性，且其分子结构不含卤素，在高频通信领域展现出重要的应用价值，因而研究PPO基高频复合材料具有重要意义[8-9]。
PPO虽然具有优异的介电性能，但其为热塑性工程材料，尺寸稳定性较弱，且本征导热系数较小，因而限制了其在高功率密度电子封装中的应用[10-12]。在树脂基体中添加填料是改善材料导热性能的重要方式之一[13]，WU R等[14]将纳米BN加入到聚乳酸（PLA）中，当纳米BN质量分数为20%时，复合材料的径向导热系数增大到4.9 W/(m·K)，在 1 kHz下的介电损耗因子达到0.007。然而，填料的添加也会导致复合材料的相界面问题，大部分无机填料的表面具有亲水性，而有机聚合物的表面则具有疏水性，导致复合材料中两者相界面相容性较差。一方面，相界面相容性差会导致复合材料出现缺陷，劣化其力学性能和导热性能；另一方面，相界面相容性的差异将导致复合材料相界面发生界面极化，进而导致其介电常数和介电损耗增大[15]。常见的解决方案是对填料进行表面有机改性或接枝改性[16]，LIU F等[17]采用甲基三乙氧基硅烷改性SiO2后添加到PTFE中制备复合材料，结果表明，改性SiO2有效改善了填料与基体间的相容性，填料分散更为均匀，复合材料具有更低的介电损耗、更低的热膨胀系数及更好的力学性能。LUO K等[18]采用乙烯基三甲氧基硅烷对SiO2进行表面改性后填充到聚苯醚/苯乙烯-丁二烯-苯乙烯/三烯丙基异氰脲酸酯（PPO/SBS/TAIC）基体中制备复合材料，结果表明改性SiO2填料有效提高了复合材料的热稳定性、导热性能和介电性能，在10 GHz下复合材料的介电常数和介电损耗因子分别为3.23和0.001 8，导热系数达到0.735 W/(m·K)。
在本课题组的前期工作中，通过对PPO进行再分配反应，并在其主链上接枝丙烯基团，得到改性PPO（MPPO），大幅改善了PPO的加工性能和尺寸稳定性[10]。本研究提出双键接枝SiO2协同交联改性策略，采用含双键的硅烷偶联剂对SiO2进行改性后填充到MPPO中，利用双键之间的交联反应，大幅改善填料与MPPO基体之间的界面相容性，制备兼具低介电和高导热的MPPO基复合材料，并系统研究填料表面改性及含量对复合材料微观结构、介电性能和导热性能的影响规律，以期为高频电子封装材料设计提供理论依据和技术支撑。
1　实验
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1.1　主要原材料
聚苯醚（PPO，S201型），日本旭化成株式会社；双酚A、过氧化苯甲酰（BPO）、甲基丙烯酸酐、甲苯、4-二甲氨基吡啶、氯苯、甲醇、甲基乙烯基二甲氧基硅烷（MVDMS）和乙醇，均购买于上海阿拉丁生化科技股份有限公司；二氧化硅（SiO2，粒径为1～2 μm），购买于南宫市盈泰金属材料有限公司。
1.2　试样的制备
1.2.1　低分子量聚苯醚的制备
参照文献[19]，PPO的再分配反应过程如下：取36 g PPO和7.2 g双酚A添加到三口烧瓶中，随后倒入61 g甲苯溶液，将烧瓶置于油浴锅中，油浴温度设置为95℃，搅拌直至全部溶解为均一溶液。随后逐渐加入1.8 g过氧化苯甲酰（BPO），继续搅拌6 h，溶液呈深黄色。取1 L的烧杯倒入600 mL甲醇溶液，置于磁力搅拌器上，边搅拌边倒入反应完成的混合液，并继续搅拌1 h。经过滤后再重复该步骤，直至滤液呈无色透明状。将过滤后的滤饼放置在100℃的烘箱中烘干12 h，获得低分子量的PPO（LPPO）。
1.2.2　热固性PPO的制备
将3.0 g LPPO、0.7 g 4-二甲氨基吡啶和0.87 g甲基丙烯酸酐添加到三口烧瓶中，再将50 mL氯苯添加到烧瓶中，在氮气保护下置于70℃油浴下反应4 h。待溶液冷却至室温状态后，将溶液倒入装有600 mL甲醇的烧杯中，快速搅拌1 h，之后过滤、烘干得到热固性聚苯醚（MPPO）。
1.2.3　改性SiO2/MPPO复合材料的制备
将1.0 g SiO2粉末和一定量的MVDMS加入到乙醇中，在60℃下搅拌2 h，经过滤、洗涤、干燥后得到改性SiO2（m-SiO2）。然后，将MPPO、过氧化二异丙苯（DCP）和不同量的m-SiO2（质量分数分别为40%、50%、60%、70%、80%）加入到甲苯溶液中，在60℃下搅拌0.5 h得到黏性液体，将其转移到模具中，在100℃下干燥4 h后，再在220℃、10 MPa下热压2 h，得到m-SiO2/MPPO复合材料。制备过程如图1所示。
1.3　测试表征
使用美国Thermo Nicolet公司iS50+型红外光谱仪（FTIR）分析改性SiO2及其复合材料的表面官能团；使用日本日立公司Hitachi S-4800型高分辨冷场发射扫描电镜观察复合材料的横截面形貌；使用美国PerkinElmer公司DSC-4000型差示扫描量热仪测试复合材料的比热容（Cp）；使用美国PerkinElmer公司的PE Pyris1型热重分析仪测试MPPO及其复合材料的热稳定性能；使用德国NETZSCH公司LFA467型激光散射导热仪测试MPPO及其复合材料的热扩散系数（α）；利用排水法，使用电子天平测试材料的体积密度（ρ），根据公式λ=α×ρ×Cp，计算MPPO及其复合材料的导热系数（λ）；采用美国Keysight公司的P5003A型介电性能测试系统，采用网络分析仪测试MPPO及其复合材料在10 GHz下的介电常数和介电损耗；使用美国TA仪器公司DMA8500型动态热机械分析仪测试MPPO及复合材料的储能模量、损耗模量和损耗因子与温度变化的关系。采用上海徐吉电气有限公司CS9915AX型可编程耐压测试仪测试复合材料的电气强度。
2　结果与讨论
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2.1　SiO₂的表面改性
图2为SiO2的表面修饰过程及其红外光谱。从图2可以看出，MVDMS在加热、酸性条件下会水解为甲基乙烯基硅醇，其分子链上的-OH容易与SiO2表面上的-OH发生脱水缩合反应，得到表面改性 m-SiO2。相比于SiO2，改性SiO2在波数为3 416 cm-1处出现了吸收峰，表明其表面含有-OH，而波数为2 919、1 618、1 082 cm-1处的吸收峰则可分别归因于-CH2-、C=C和Si-O-Si-的吸收振动峰，这也印证了图2中反应的发生，说明SiO2表面出现硅醇的官能团[20-21]。
2.2　复合材料的形貌
图3为复合材料的截面扫描电镜图，图4为m-SiO2/MPPO复合材料的横截面扫描电镜图及其EDS图。从图3可以看出，在填料质量分数为60%时，未改性SiO2/MPPO复合材料的SiO2颗粒较为均匀地分散在树脂体系中（图3(a)），说明溶液混合法有利于填料在树脂中的分散，但也能明显看到颗粒与树脂之间存在缝隙。而在同等填充含量下，改性m-SiO2和MPPO的界面处没有明显的空洞结构（图3(b)），同时由图4复合材料的EDS图可以看到m-SiO2均匀分布在树脂基体中，表明m-SiO2与MPPO具有良好的相容性。另外，在填料质量分数为70%时，m-SiO2/MPPO复合材料只有非常少的空洞结构（图3(c)），这个结果可以归因于在m-SiO2/MPPO复合材料中相界面处的化学反应可以增加两者的相容性。随着填料含量的增加，复合材料中的空隙率也会增加。当填料质量分数为80%时，m-SiO2/MPPO复合材料中存在较多的空隙（图3(d)），因空气的导热系数非常低，空隙增加不利于复合材料导热性能的提高，也会劣化复合材料的力学性能。
2.3　复合材料的导热性能
图5为SiO2/MPPO复合材料的导热系数、导热系数增强幅度及界面反应机理。从图5可以看出，纯MPPO的导热系数只有0.24 W/(m·K)。随着填料的加入，SiO2/MPPO复合材料的导热系数迅速增大，当SiO2的质量分数为40%时，SiO2/MPPO复合材料的导热系数达到0.38 W/(m·K)。随着填料质量分数从40%增加到70%，SiO2/MPPO复合材料的导热系数从0.38 W/(m·K)增加到0.82 W/(m·K)。这个结果可以用热传导路径理论来解释。在高填料含量下，导热填料更容易形成热传导通路，并降低接触热阻，使得复合材料的导热系数得到大幅提升。但需要注意的是，当填料含量过大（质量分数超过80%）后会出现较多的空洞结构（如图3(d)所示），而空气的导热系数仅为0.02 W/(m·K)，将会导致复合材料的导热性能出现略微下降。
m-SiO2/MPPO复合材料的导热系数也呈现出类似的趋势。随着填料含量的不断增加，m-SiO2/MPPO复合材料的导热系数高于SiO2/MPPO复合材料，在填料质量分数为70%时，m-SiO2/MPPO复合材料的导热系数达到1.18 W/(m·K)，是纯MPPO的4.92倍。相对于SiO2/MPPO复合材料，由于m-SiO2/MPPO中改性填料与树脂基体之间通过共价键反应大幅提升了相界面的相容性（如图5(c)所示），有利于减少复合材料界面处的声子散射，提高复合材料的导热系数。
2.4　复合材料的介电性能
图6为m-SiO2/MPPO复合材料的介电性能。由图6可知，m-SiO2/MPPO复合材料的介电常数随着填料含量的增加而不断增大，在10 GHz的高频下，填料质量分数为70%时，复合材料的介电常数增加到3.11。这种现象可以用无机填料和有机聚合物之间的界面极化来解释[22]。m-SiO2和MPPO之间的界面电荷聚集形成许多“微电容器”，m-SiO2作为微电容器的双极板，MPPO聚合物作为板之间的介电材料。填料含量的增加不仅增加了“微电容器”的数量，还减少了“微电容器”两极之间的距离，从而导致宏观上复合材料介电常数的增加[23]。相反，复合材料的介电损耗随着填料的加入而降低，在填料质量分数为70%时，m-SiO2/MPPO复合材料的介电损耗因子降至0.004 4。较高的填料含量会导致复合材料出现界面极化，但填料表面改性能够大幅改善其与基体的相容性，减少界面极化效应，有效增强填料在树脂基体中的分散，减少填料的团聚，从而降低复合材料的介电损耗。复合材料优异的介电性能使其在高频电子器件得到更广泛的应用。
2.5　复合材料的热稳定性能
为了评估m-SiO2/MPPO复合材料的热稳定性，对不同填料含量的复合材料进行了热性能分析，测试温度从30℃到800℃，采用5%失重对应的温度（T5%）、10%失重对应的温度（T10%）和耐热指数（THRI，THRI=0.49×[T5%+0.6×(T30%-T5%)][25]）分析复合材料的热稳定性，结果如图7和表1所示。根据图7和表1可知，纯MPPO的T5%、T10%和THRI分别为216.4、270.9、171.5℃，当m-SiO2为50%时，m-SiO2/MPPO复合材料的T5%、T10%和THRI分别增加到323.3、433.5、201.8℃，当m-SiO2的质量分数为70%时，m-SiO2/MPPO复合材料的T5%、T10%相较纯MPPO分别提高了224.1℃和181.4℃。这种现象可以从两方面分析解释。一方面m-SiO2粉末减少了复合材料中聚合物的热降解并防止分解产物从聚合物扩散到气相中；另一方面无机填料的表面改性可以提高填料与MPPO之间的结合力，也能增强复合材料的氧化扩散阻力，延缓MPPO树脂的分解，从而使复合材料的热分解温度和耐热性能提升。从结果可以看出，该复合材料具有优异的热稳定性，能满足微电子器件的要求[24]。
2.6　复合材料的电气强度
图8为SiO2/MPPO复合材料的电气强度测试结果。由图8可知，MPPO的电气强度为23.0 kV/mm，复合材料的电气强度下降，当m-SiO2填充质量分数从40%增加60%时，m-SiO2/MPPO复合材料的电气强度略有提高，这可能是由于m-SiO2和MPPO之间的强界面作用力限制了电流对复合材料的影响。在填料质量分数为70%时，复合材料的电气强度降至20.5 kV/mm，这可归因于MPPO与m-SiO2之间缺陷的增加。虽然随着填料含量的增加，复合材料的电气强度有所降低，但仍然能够满足电子产品对材料绝缘性能的要求[26]。
2.7　复合材料的动态力学性能
动态力学性能反映了复合材料中以弹性能形式储存的能量以及在应变过程中耗散的能量，填料的分散、填料的加载以及填料向基体的载荷传递是影响动态力学性能的主要因素。本文测试了复合材料的动态热力学性能，结果如图9所示。从图9(a)可以看出，随着m-SiO2含量的增加，复合材料的储能模量显著增加。当m-SiO2的质量分数增加到70%时，复合材料的储能模量增加到7 807 MPa，是纯MPPO（919 MPa）的8.5倍。同时可以看到填料改性也会影响复合材料的储能模量，当填料质量分数50%时，m-SiO2/MPPO复合材料的储能模量为5 739 MPa，高于SiO2/MPPO的储能模量（4 441 MPa）。这个结果可归因于m-SiO2和MPPO的强界面作用力改善了填料在树脂基体中的分布，提高了填料的分散性，有利于载荷从填料转移到树脂基体中，使其动态变形阻力得到提升。
力学损耗因子（tanδ）曲线中最大峰值对应的温度可以被视为复合材料的玻璃化转变温度（Tg）。从图9(b)可以看出，MPPO和含有50% SiO2、50% m-SiO2和70% m-SiO2的复合材料Tg分别为144.0、151.0、161.7、165.4℃。添加改性SiO2后复合材料的Tg略有提高，同时填料含量增加也会提升复合材料的Tg，原因在于m-SiO2在基体中的良好分散以及MPPO和m-SiO2之间的强界面作用力，使得其固有模量增加，同时限制了聚合物分子链在玻璃化过渡区中的运动，从而导致复合材料的玻璃化转变温度提高[27]。
3　结论
收起
（1）使用含双键硅烷偶联剂改性SiO2填充改性聚苯醚制备了高导热低介电复合材料。SEM和EDS结果表明，改性SiO2能均匀分散在聚苯醚基体中，大幅改善了填料与树脂间的相容性。
（2）改性SiO2的加入能有效改善树脂基体的导热性能。随着改性SiO2含量的增加，复合材料的导热性能随之提升。当m-SiO2的质量分数为70%时，复合材料的导热系数提高到1.18 W/(m·K)，是纯MPPO的4.92倍。同时复合材料也保持了良好的介电性能，在10 GHz下，复合材料的介电常数和介电损耗因子分别为3.11和0.004 4，符合高频高速覆铜板对材料介电性能的要求。
（3）与纯MPPO相比，不同含量改性SiO2的复合材料热分解温度（5%和10%失重时的温度）均有大幅提高，当m-SiO2的质量分数为70%时，复合材料的热分解温度分别提高了224.1℃和181.4℃，复合材料的热稳定性能明显提升。
（4）在填料质量分数为70%时，m-SiO2/MPPO复合材料的电气强度为20.5 kV/mm，储能模量达到7 807 MPa，Tg达到165.4℃，表现出优异的绝缘和动态力学性能，有利于其在电子材料领域的应用。

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2026年第59卷第6期
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doi: 10.16790/j.cnki.1009-9239.im.2026.06.013
  • 接收时间：2025-06-12
  • 首发时间：2026-09-10
  • 出版时间：2026-06-20
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  • 收稿日期：2025-06-12
  • 修回日期：2025-07-25
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    1安捷利（番禺）电子实业有限公司，广东　广州　511455
    2中山大学 化学学院，广东　广州　510006
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genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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