Article(id=1235553560130285972, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235553554455392591, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2021.05.001, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1590940800000, receivedDateStr=2020-06-01, revisedDate=1593100800000, revisedDateStr=2020-06-26, acceptedDate=null, acceptedDateStr=null, onlineDate=1772508524210, onlineDateStr=2026-03-03, pubDate=1621440000000, pubDateStr=2021-05-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1772508524210, onlineIssueDateStr=2026-03-03, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1772508524210, creator=13701087609, updateTime=1772508524210, updator=13701087609, issue=Issue{id=1235553554455392591, tenantId=1146029695717560320, journalId=1149653034449285133, year='2021', volume='54', issue='5', pageStart='1', pageEnd='108', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1772508522857, creator=13701087609, updateTime=1773989531393, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1241765354544890513, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235553554455392591, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1241765354544890514, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235553554455392591, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=1, endPage=9, ext={EN=ArticleExt(id=1235553560549716397, articleId=1235553560130285972, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Study and Application of Polymer Insulating Material in Power Module Packaging, columnId=1198667062026531195, journalTitle=Insulating Materials, columnName=Review, runingTitle=null, highlight=null, articleAbstract=

This paper introduces the research and application of polymer insulating materials in power module packaging, including silicone gel, epoxy potting adhesive, epoxy molding compound, plastic frame and other materials, and their performance indicators and research status at home and abroad were elaborated. Finally, the application direction of polymer insulating materials in power module packaging was prospected, including optimizing the use process, improving the stability and insulation performance, developing materials with temperature shock resistance, low linear thermal expansion coefficient, and high dielectric strength and studying new applications technology.

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本文介绍了高分子绝缘材料在功率模块封装中的研究与应用情况,包括有机硅凝胶、环氧灌封胶、环氧模塑料、塑料框架等材料,并对其性能指标和国内外研究现状等进行了阐述。最后对高分子材料在功率模块封装中的应用方向进行了展望,即优化使用工艺,提高产品稳定性和绝缘性能,开发耐温度冲击、热膨胀系数低、介电强度高的材料以及研究新型应用技术等。

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曾亮(1984-),男(汉族),湖南醴陵人,高级工程师,主要从事高分子材料在功率模块封装中的应用和开发。

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Riga,Latvia:IEEE,2018., articleTitle=High temperature polyimide polymer material for high voltage IGBT power module switching applications, refAbstract=null), Reference(id=1243118821444272791, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, doi=null, pmid=null, pmcid=null, year=2018, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[40], rfOrder=39, authorNames=MORSHED M, ISLAM A, ROOSE T, journalName=null, refType=null, unstructuredReference=MORSHED M, ISLAM A, ROOSE T, et al. Control of partial discharge with high temperature insulating polymer for high voltage IGBT module application[C]//International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 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departmentName=null, remark=2湖南省功率半导体创新中心, 湖南 株洲 412001)])], figs=[ArticleFig(id=1243118809620529398, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.1, caption=Welded IGBT module sample and its section diagram, figureFileSmall=+03zPcjWzwNvfX00yh0sbw==, figureFileBig=OMdIOEiX1LBWYadhjnqlJw==, tableContent=null), ArticleFig(id=1243118809758941436, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图1, caption=焊接式IGBT模块实样及其剖面示意图, figureFileSmall=+03zPcjWzwNvfX00yh0sbw==, figureFileBig=OMdIOEiX1LBWYadhjnqlJw==, tableContent=null), ArticleFig(id=1243118809851216136, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.2, caption=Photos of silicone gel encapsulated IGBT module and welded IGBT module after encapsulation, figureFileSmall=eEFdSeHzIIkJzk9UrIucMg==, figureFileBig=/jwV3RyRIXWqoao0vy8vqQ==, tableContent=null), ArticleFig(id=1243118809947685137, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图2, caption=有机硅凝胶封装IGBT模块和封装后焊接式IGBT模块照片, figureFileSmall=eEFdSeHzIIkJzk9UrIucMg==, figureFileBig=/jwV3RyRIXWqoao0vy8vqQ==, tableContent=null), ArticleFig(id=1243118810039959831, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.3, caption=Comparison of ordinary linear silicone gel before and after ageing at 200℃ for 1 000 h, figureFileSmall=o+Is6em9GuelEPOU8e4XJQ==, figureFileBig=Nwt7PX53gHjV9wiHD7kD2Q==, tableContent=null), ArticleFig(id=1243118810119651614, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图3, caption=普通线性有机硅凝胶在200℃下老化1 000 h前后结果对比, figureFileSmall=o+Is6em9GuelEPOU8e4XJQ==, figureFileBig=Nwt7PX53gHjV9wiHD7kD2Q==, tableContent=null), ArticleFig(id=1243118810216120611, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.4, caption=Photos of double component epoxy potting adhesive and welded IGBT module after encapsulation, figureFileSmall=89eWOVtbqyvrVt6sOotPNQ==, figureFileBig=eE7SyZWQ1pSJO45McvaDVg==, tableContent=null), ArticleFig(id=1243118810283229482, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图4, caption=双组分环氧灌封胶和封装后焊接式IGBT模块照片, figureFileSmall=89eWOVtbqyvrVt6sOotPNQ==, figureFileBig=eE7SyZWQ1pSJO45McvaDVg==, tableContent=null), ArticleFig(id=1243118810346144050, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.5, caption=Schematic diagram of DP resin package and conventional IGBT module package, figureFileSmall=Wl70Spzrk5Qm3OKTZEH8gQ==, figureFileBig=8NFPArfxeez7IhecvwlYbA==, tableContent=null), ArticleFig(id=1243118810438418744, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图5, caption=DP树脂封装和传统IGBT模块封装示意图, figureFileSmall=Wl70Spzrk5Qm3OKTZEH8gQ==, figureFileBig=8NFPArfxeez7IhecvwlYbA==, tableContent=null), ArticleFig(id=1243118812950806849, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.6, caption=IGBT module packaged by DP resin (LV100 Power Module), figureFileSmall=i70mlWLSE/q/kcCDw9wW8g==, figureFileBig=iLv1kLP22kQf5FBkIh0SEw==, tableContent=null), ArticleFig(id=1243118813122773320, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图6, caption=DP树脂封装IGBT模块(三菱LV100), figureFileSmall=i70mlWLSE/q/kcCDw9wW8g==, figureFileBig=iLv1kLP22kQf5FBkIh0SEw==, tableContent=null), ArticleFig(id=1243118813202465103, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.7, caption=Process of transfer molding, figureFileSmall=q8zl7JLXKMdPRxXyfQ4i1Q==, figureFileBig=4Wuye7JcMtqkkd7Gc5ywBA==, tableContent=null), ArticleFig(id=1243118813349265754, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图7, caption=传递模塑成型的工艺过程, figureFileSmall=q8zl7JLXKMdPRxXyfQ4i1Q==, figureFileBig=4Wuye7JcMtqkkd7Gc5ywBA==, tableContent=null), ArticleFig(id=1243118813424763231, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.8, caption=EMC resin and its basic composition, figureFileSmall=RA7mVB1YxE7Yt/XXscUAJg==, figureFileBig=udDdzlwr1aaslQI9l9Y1yA==, tableContent=null), ArticleFig(id=1243118813525426531, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图8, caption=EMC树脂及其基本组成, figureFileSmall=RA7mVB1YxE7Yt/XXscUAJg==, figureFileBig=udDdzlwr1aaslQI9l9Y1yA==, tableContent=null), ArticleFig(id=1243118813630284140, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.9, caption=Double side cooled IGBT module of Infineon, figureFileSmall=iaRGota/5+pYwLmokgmTmA==, figureFileBig=6QpzicARhgJqoayQ+sRk+A==, tableContent=null), ArticleFig(id=1243118813760307570, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图9, caption=英飞凌双面散热IGBT模块, figureFileSmall=iaRGota/5+pYwLmokgmTmA==, figureFileBig=6QpzicARhgJqoayQ+sRk+A==, tableContent=null), ArticleFig(id=1243118813856776567, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.10, caption=PA pellets and its injection molded IGBT module fram, figureFileSmall=uL4cs05VdZ2EkF/XVa59RQ==, figureFileBig=FUB1dpmowcUgzhwnQlIdkQ==, tableContent=null), ArticleFig(id=1243118813978411393, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图10, caption=PA粒料及其注塑成型的IGBT模块框架, figureFileSmall=uL4cs05VdZ2EkF/XVa59RQ==, figureFileBig=FUB1dpmowcUgzhwnQlIdkQ==, tableContent=null), ArticleFig(id=1243118814175543688, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.11, caption=Structure diagram of press-pack IGBT, figureFileSmall=KWeM4zPqMe3Fr+l6OUzovg==, figureFileBig=BvHTyVqBEJhU8C03No5RFA==, tableContent=null), ArticleFig(id=1243118814276206990, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图11, caption=压接型IGBT模块示意图和子模组结构, figureFileSmall=KWeM4zPqMe3Fr+l6OUzovg==, figureFileBig=BvHTyVqBEJhU8C03No5RFA==, tableContent=null), ArticleFig(id=1243118814368481686, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Fig.12, caption=Different structures of parylene, figureFileSmall=kNQXl9OpX6xEaJubl7wJdw==, figureFileBig=Zb9qQQfdIT93KT4NRfftDw==, tableContent=null), ArticleFig(id=1243118814460756378, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=图12, caption=不同分子结构的派瑞林, figureFileSmall=kNQXl9OpX6xEaJubl7wJdw==, figureFileBig=Zb9qQQfdIT93KT4NRfftDw==, tableContent=null), ArticleFig(id=1243118814557225376, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.1, caption=The performance of three of addition silicone gels applied in IGBT module packaging, figureFileSmall=null, figureFileBig=null, tableContent=
项目胶1胶2胶3
组分ABABAB
外观透明透明透明透明透明透明
密度(23℃)/(g/cm3)0.970.970.970.970.970.97
黏度(23℃)/(mPa·s)1 0001 0004504501 0001 000
混合比(质量/体积)1∶11∶11∶1
混合黏度(23℃)/(mPa·s)1 0004501 000
适用期/h2.5(25℃)1.7(23℃)0.75(25℃)
凝胶时间/min30.0(150℃)7.0(135℃)30.0(150℃)
锥入度(0.1 mm,23℃)858585
介电常数(50 Hz)2.72.72.7
介电强度/(kV/mm)171519.2
体积电阻率/(×1015Ω·cm)1.03.06.0
), ArticleFig(id=1243118814620139943, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表1, caption=

3种加成型有机硅凝胶应用在IGBT模块封装的性能

, figureFileSmall=null, figureFileBig=null, tableContent=
项目胶1胶2胶3
组分ABABAB
外观透明透明透明透明透明透明
密度(23℃)/(g/cm3)0.970.970.970.970.970.97
黏度(23℃)/(mPa·s)1 0001 0004504501 0001 000
混合比(质量/体积)1∶11∶11∶1
混合黏度(23℃)/(mPa·s)1 0004501 000
适用期/h2.5(25℃)1.7(23℃)0.75(25℃)
凝胶时间/min30.0(150℃)7.0(135℃)30.0(150℃)
锥入度(0.1 mm,23℃)858585
介电常数(50 Hz)2.72.72.7
介电强度/(kV/mm)171519.2
体积电阻率/(×1015Ω·cm)1.03.06.0
), ArticleFig(id=1243118814762746286, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.2, caption=The performance of two exoxy potting adhesives applied in IGBT module packaging, figureFileSmall=null, figureFileBig=null, tableContent=
项目胶1胶2
组分树脂固化剂树脂固化剂
外观

黑色

液体

白色

液体

黑色

液体

淡黄色

液体

密度(23℃)/(g/cm3)1.71~1.761.71~1.761.781.16
黏度(25℃)/(Pa·s)25~3022~32200~4000.045~0.046
混合比(质量/体积)1∶14∶1
混合黏度(25℃)/(Pa·s)22~324~6
凝胶时间(125℃)/min15~2030~40
固化工艺80℃/h+125℃/2h+140℃120℃/10h
邵氏D硬度(25℃)9590
热变形温度(TMA)/℃130122
拉伸强度/MPa40~5030~40
断裂伸长率/%1~23~5
吸水率(23℃,24 h)/%0.200.24
热膨胀系数(25~200℃)/(×10-6)38~4257
热导率/(W/(m·K))0.6~0.70.3
阻燃性(UL94)V-0V-0
介电强度/(kV/mm)2121
体积电阻率/(Ω·cm)10151015
), ArticleFig(id=1243118814871798195, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表2, caption=

两种环氧灌封胶在IGBT模块灌封的性能

, figureFileSmall=null, figureFileBig=null, tableContent=
项目胶1胶2
组分树脂固化剂树脂固化剂
外观

黑色

液体

白色

液体

黑色

液体

淡黄色

液体

密度(23℃)/(g/cm3)1.71~1.761.71~1.761.781.16
黏度(25℃)/(Pa·s)25~3022~32200~4000.045~0.046
混合比(质量/体积)1∶14∶1
混合黏度(25℃)/(Pa·s)22~324~6
凝胶时间(125℃)/min15~2030~40
固化工艺80℃/h+125℃/2h+140℃120℃/10h
邵氏D硬度(25℃)9590
热变形温度(TMA)/℃130122
拉伸强度/MPa40~5030~40
断裂伸长率/%1~23~5
吸水率(23℃,24 h)/%0.200.24
热膨胀系数(25~200℃)/(×10-6)38~4257
热导率/(W/(m·K))0.6~0.70.3
阻燃性(UL94)V-0V-0
介电强度/(kV/mm)2121
体积电阻率/(Ω·cm)10151015
), ArticleFig(id=1243118814972461497, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.3, caption=Performance of EMC resin for three power module packaging, figureFileSmall=null, figureFileBig=null, tableContent=
项目EMC1EMC2EMC3
填料含量/%858784
填料类型SiO2SiO2SiO2
填料尺寸/μm757075
螺旋流动长度/cm6695115
凝胶时间/s284050
玻璃化转变温度/℃225195200
CTE1/(×10-6/K)8811
CTE2/(×10-6/K)333950
弯曲模量/GPa212515
弯曲强度/MPa122185125
热导率/(W/(m·K))111
密度(23℃)/(g/cm3)1.951.991.90
成型收缩率/%0.030.040.03
阻燃性(UL94)V-0V-0V-0
), ArticleFig(id=1243118815052153280, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表3, caption=

3种功率模块封装用EMC树脂性能

, figureFileSmall=null, figureFileBig=null, tableContent=
项目EMC1EMC2EMC3
填料含量/%858784
填料类型SiO2SiO2SiO2
填料尺寸/μm757075
螺旋流动长度/cm6695115
凝胶时间/s284050
玻璃化转变温度/℃225195200
CTE1/(×10-6/K)8811
CTE2/(×10-6/K)333950
弯曲模量/GPa212515
弯曲强度/MPa122185125
热导率/(W/(m·K))111
密度(23℃)/(g/cm3)1.951.991.90
成型收缩率/%0.030.040.03
阻燃性(UL94)V-0V-0V-0
), ArticleFig(id=1243118815136039364, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.4, caption=The basic properties of five plastic frame materials for manufacturing IGBT modules, figureFileSmall=null, figureFileBig=null, tableContent=
材料种类PAPBTPETPPAPPS
熔点/℃260~280225~235265~280310~325285~315
拉伸强度/MPa11013090134114
断裂伸长率/%1.52.53.52.80.7
弯曲强度/MPa160180200179190
弯曲模量/GPa8.06.54.07.018.6
阻燃性(UL94)V-0V-0V-0V-0V-0
CTI/V400400400400600
), ArticleFig(id=1243118815198953930, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表4, caption=

5种制造IGBT模块塑料框架材料的基本性能

, figureFileSmall=null, figureFileBig=null, tableContent=
材料种类PAPBTPETPPAPPS
熔点/℃260~280225~235265~280310~325285~315
拉伸强度/MPa11013090134114
断裂伸长率/%1.52.53.52.80.7
弯曲强度/MPa160180200179190
弯曲模量/GPa8.06.54.07.018.6
阻燃性(UL94)V-0V-0V-0V-0V-0
CTI/V400400400400600
), ArticleFig(id=1243118817266745809, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.5, caption=Properties of parylene with different structures, figureFileSmall=null, figureFileBig=null, tableContent=
基本性能N型C型D型HT型
熔点/℃420290380>500
长期工作温度/℃6080100350
短期工作温度/℃80100120450
热导率/(W/(m·K))0.1260.0840.096
热膨胀系数(25℃)/(×10-6/K)69353836
), ArticleFig(id=1243118817388380629, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表5, caption=

不同结构派瑞林的基本性能

, figureFileSmall=null, figureFileBig=null, tableContent=
基本性能N型C型D型HT型
熔点/℃420290380>500
长期工作温度/℃6080100350
短期工作温度/℃80100120450
热导率/(W/(m·K))0.1260.0840.096
热膨胀系数(25℃)/(×10-6/K)69353836
), ArticleFig(id=1243118817602290140, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=EN, label=Tab.6, caption=Properties of PI coating, figureFileSmall=null, figureFileBig=null, tableContent=
基本性能PI-1PI-2PI-3
黏度(25℃)/(Pa·s)1.0~1.21.1~1.20.2
含水量/%0~0.50~0.50~0.5
钠离子含量/(×10-6)0~1.50~1.50~1.5
钾离子含量/(×10-6)0~1.00~1.00~1.0
铁离子含量/(×10-6)0~2.00~2.00~2.0
固体含量/%131515
涂覆溶剂GBLNMPNMP
保质期/年0.50.50.5
拉伸强度/MPa128120130
杨氏模量/GPa3.31.82.0
断裂伸长率/%759020~30
玻璃化温度/℃309210220
热分解温度/℃415400410
CTE/(×10-6/K)547060
介电常数3.43.43.4
吸水率/%1.12.12.3
), ArticleFig(id=1243118817694564831, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235553560130285972, language=CN, label=表6, caption=

典型的PI涂覆料性能

, figureFileSmall=null, figureFileBig=null, tableContent=
基本性能PI-1PI-2PI-3
黏度(25℃)/(Pa·s)1.0~1.21.1~1.20.2
含水量/%0~0.50~0.50~0.5
钠离子含量/(×10-6)0~1.50~1.50~1.5
钾离子含量/(×10-6)0~1.00~1.00~1.0
铁离子含量/(×10-6)0~2.00~2.00~2.0
固体含量/%131515
涂覆溶剂GBLNMPNMP
保质期/年0.50.50.5
拉伸强度/MPa128120130
杨氏模量/GPa3.31.82.0
断裂伸长率/%759020~30
玻璃化温度/℃309210220
热分解温度/℃415400410
CTE/(×10-6/K)547060
介电常数3.43.43.4
吸水率/%1.12.12.3
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高分子绝缘材料在功率模块封装中的研究与应用
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曾亮 1, 2 , 齐放 1, 2 , 戴小平 1, 2
绝缘材料 | 综述 2021,54(5): 1-9
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绝缘材料 | 综述 2021, 54(5): 1-9
高分子绝缘材料在功率模块封装中的研究与应用
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曾亮1, 2, 齐放1, 2, 戴小平1, 2
作者信息
  • 1湖南国芯半导体科技有限公司, 湖南 株洲 412001
  • 2湖南省功率半导体创新中心, 湖南 株洲 412001
  • 曾亮(1984-),男(汉族),湖南醴陵人,高级工程师,主要从事高分子材料在功率模块封装中的应用和开发。

Study and Application of Polymer Insulating Material in Power Module Packaging
Liang ZENG1, 2, Fang QI1, 2, Xiaoping DAI1, 2
Affiliations
  • 1Coresing Semiconductor Technology Co., Ltd., Zhuzhou 412001, China
  • 2Hunan Power Semiconductor Manufacturing Innovation Center, Zhuzhou 412001, China
出版时间: 2021-05-20 doi: 10.16790/j.cnki.1009-9239.im.2021.05.001
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本文介绍了高分子绝缘材料在功率模块封装中的研究与应用情况,包括有机硅凝胶、环氧灌封胶、环氧模塑料、塑料框架等材料,并对其性能指标和国内外研究现状等进行了阐述。最后对高分子材料在功率模块封装中的应用方向进行了展望,即优化使用工艺,提高产品稳定性和绝缘性能,开发耐温度冲击、热膨胀系数低、介电强度高的材料以及研究新型应用技术等。

绝缘材料  /  功率模块  /  有机硅树脂  /  环氧树脂

This paper introduces the research and application of polymer insulating materials in power module packaging, including silicone gel, epoxy potting adhesive, epoxy molding compound, plastic frame and other materials, and their performance indicators and research status at home and abroad were elaborated. Finally, the application direction of polymer insulating materials in power module packaging was prospected, including optimizing the use process, improving the stability and insulation performance, developing materials with temperature shock resistance, low linear thermal expansion coefficient, and high dielectric strength and studying new applications technology.

insulating material  /  power module  /  silicone resin  /  epoxy resin
曾亮, 齐放, 戴小平. 高分子绝缘材料在功率模块封装中的研究与应用. 绝缘材料, 2021 , 54 (5) : 1 -9 . DOI: 10.16790/j.cnki.1009-9239.im.2021.05.001
Liang ZENG, Fang QI, Xiaoping DAI. Study and Application of Polymer Insulating Material in Power Module Packaging[J]. Insulating Materials, 2021 , 54 (5) : 1 -9 . DOI: 10.16790/j.cnki.1009-9239.im.2021.05.001
功率模块封装是一门综合性非常强的学科,涉及的领域从材料研究到工艺应用、从无机材料到高分子材料、从大型智能化生产设备到计算机仿真分析等。功率模块封装有很多形式,新的封装形式对封装材料的挑战和机遇是电子产品问世以来从未遇到过的,所涉及的问题也在其他领域中很少见到[1-2]
绝缘栅双极晶体管(IGBT)是典型的功率模块,具有控制速度快、驱动功率小以及饱和压降低等特点,被广泛应用于先进轨道交通、输配电、电动汽车、新能源及智能家电等电气化领域,被誉为电能(功率)处理的“CPU”[3]。IGBT模块的封装形式按管芯或芯片的组装工艺及安装固定方法分为压接式和焊接式。在封装过程中采用了很多不同的高分子材料,如有机硅凝胶、环氧灌封胶、尼龙、环氧模塑料等。高分子材料主要起绝缘保护、密封防潮以及提供机械支撑的作用,对提高IGBT耐压能力以及降低模块局部放电量有重要的作用[4]
由于IGBT模块的封装形式不同,所采用的高分子材料也不相同。对于焊接式IGBT模块,比较典型的封装方式是采用有机硅凝胶、环氧灌封胶和塑料外壳相结合的方式进行封装,如图1所示。这种封装方式不仅能保证模块的电绝缘性能,还能为模块提供较好的机械强度保护,主要应用于轨道交通领域用IGBT模块的封装。也有直接采用有机硅凝胶与塑料外壳相结合的方式进行封装,采用该封装方式的IGBT模块主要应用于电动汽车和风电领域等。由于环氧树脂自身内应力较大,且固化过程中存在较大收缩,因此采用环氧灌封胶直接进行封装的形式并不多见。日本三菱电机开发出一种DP树脂(direct potting resin)是一种低收缩、低应力的灌封树脂,可直接封装焊接式IGBT模块。
对于压接式IGBT模块,模块框架所采用的高分子材料主要是聚苯硫醚(PPS)、聚醚醚酮(PEEK)等尺寸稳定性好、机械强度高、绝缘性能好的特种工程塑料。双面散热(double side cooled module)封装方式是目前的研究热点,所采用的高分子材料是特种环氧模塑料树脂(epoxy molding compound,EMC),具有玻璃化转变温度(Tg)高、线性热膨胀系数(CTE)小和可靠性高的特点。双面散热封装的IGBT模块主要应用于电动汽车领域。还有其他一些高分子材料应用于功率模块芯片的涂覆处理,如聚酰亚胺(PI)涂覆胶和聚对二甲苯(parylene)等。
本文结合高分子材料研究技术的最新进展和目前功率模块封装技术中急需要克服的困难和要求,介绍了一些在功率模块封装,特别是IGBT模块封装应用的高分子材料及其在模块中的应用情况。
有机硅作为一种稳定可靠的高分子材料,在IGBT模块上的主要作用是灌封(即硅凝胶)和导热(即涂覆于模块与散热板之间的高导热硅脂)。有机硅凝胶是一种存在液体和固体两种相态的“固液共存”的特殊硅橡胶,其质地柔软,不会对IGBT芯片产生机械应力。即使在-50~200℃条件下,其柔软性能也基本不变,能很好地保护IGBT芯片免受湿气侵蚀,达到绝缘、防潮、防尘、减震和防腐蚀的效果[5]。有机硅凝胶种类繁多,就反应类型可以分为加成型和缩合型。缩合型有机硅凝胶具有较好的粘接性和自修复性,但反应过程中会有小分子物质产生,收缩率较大且容易形成气泡,因此不适合灌封要求较高的功率半导体封装。加成型有机硅凝胶主要是由乙烯基硅油(或丙烯基)、含氢硅油以及贵金属催化剂等组成,反应过程为乙烯基与活性氢的加成反应,无副产物产生,固化物纯度高且无收缩,因此在IGBT模块封装中主要采用的是加成型有机硅凝胶[6]图2为有机硅凝胶封装IGBT模块和封装后焊接式IGBT模块的照片。
国外有机硅凝胶的主要供应商有瓦克(Wacker)、信越化学(Shin-Etsu Chemical)、道康宁(Dow Coming)、迈图(Momentive)、埃肯有机硅(Elkem Silicones)、高丽化工(KCC)、ACC(ACC Silicones Europe)等公司。表1为3种加成型有机硅凝胶应用在IGBT模块封装的性能比较。从表1可以看出,IGBT模块封装用有机硅凝胶相对环氧灌封胶具有更低的黏度,且都为等比例混合,比较适合自动化设备灌封。
普通线性聚二甲基硅氧烷凝胶在超过175℃的高温下存放时间超过1 000 h后会变脆,力学性能和介电性能下降幅度大,甚至会开裂[7]图3为普通线性有机硅凝胶在200℃高温下老化1 000 h前后的结果对比。从图3可以看出,普通型有机硅凝胶在200℃高温下存放1 000 h后出现黄变和开裂,说明材料性能下降严重,这是由于有机硅凝胶纯度不足导致的,有机硅凝胶纯度不足的原因是原材料纯度和制备工艺的影响。离子含量过高的有机硅凝胶在长期的高温和高电场环境中会发生黄变、硬化、金属离子迁移等问题,从而直接影响IGBT模块的可靠性,因此有机硅凝胶的纯度问题需要重点关注。瓦克开发出超纯度有机硅凝胶,其总残余离子含量小于2×10-6,特别是SEMICOSIL 915HT和SEMICOSIL 920LT这两款有机硅凝胶具有纯度高和耐黄变性好的优点[8]。随着IGBT模块封装形式的不断发展,对于封装所采用的有机硅凝胶提出了更高的要求。IGBT模块封装用有机硅凝胶的高纯度、耐高温性和高介电性是重点关注的发展方向。
新一代的功率模块,如碳化硅、氮化镓等功率模块的发展也对有机硅凝胶的耐高温性和介电性提出了新的考验。信越化学关注到高温下的“凝胶裂缝”现象,开发、应用能够长期在200℃下使用的有机硅凝胶,并对有机硅凝胶在高温储存下的失效模式以及如何克服这些失效模式进行了探讨[9]。瓦克推出了SEMICOSIL 915HT有机硅凝胶,可以使用紫外线活化的催化剂进行固化,即使在室温下也能缩短处理时间,当有机硅凝胶与催化剂的混合比例为10∶1时,固化后的介电常数为2.8,介电强度达到30.0 kV/mm,在210℃的高温老化测试2 000 h后发现SEMICOSIL 915HT有机硅凝胶的外观和力学性能基本不变,具有很好的介电性能和耐高温性能[8]。道康宁也为新一代功率模块在200℃条件下连续工作而开发出耐高温有机硅凝胶,该硅凝胶在215℃的高温下耐受时间长达2 000 h[7]。赵慧宇等[10]以自制乙烯基硅油和含氢硅油为原材料,开发出用于IGBT模块灌封的双组分加成型有机硅凝胶,其介电强度达到22.6 kV/mm,相对介电常数为2.65,具有较高的电绝缘性。丁聘等[11]以聚甲基乙烯基硅氧烷为基础硅油、端链含氢硅油为扩链剂、侧链含氢硅油为交联剂,以铂基催化剂和炔醇类为抑制剂,制备出双组分有机硅凝胶,经过对6 500 V的IGBT模块进行灌封评估后发现模块局部放电量小于10 pC,顺利通过模块振动、高温存储、低温存储等多项应用性试验。时代新材设计了一种MDT树脂应用于耐高温的有机硅凝胶,在220℃下热老化测试1 000 h后其不发生黄变,具有很好的耐高温性能[12-13]
通过混合高电气强度的填料也可以改善有机硅凝胶的介电性能。WANG N等[14]在有机硅凝胶中添加BaTiO3粉体来提高硅凝胶的相对介电常数,通过试验发现有机硅凝胶的介电常数达到6.4,且会随着电场改变而改变,实现了有机硅凝胶的介电常数可调性,并利用复合有机硅凝胶在3 300 V的商业化IGBT模块进行测试。王昭等[15]进一步利用有限元分析方法分析了BaTiO3复合有机硅凝胶对IGBT模块内部电场分布的影响,验证了提高有机硅凝胶介电常数对IGBT模块内电场强度的抑制作用。
环氧树脂是分子链段中含有两个以上环氧基的有机高分子材料,具有工艺性强、介电性能好、机械强度高的特点,被广泛应用于各个领域[16]。环氧树脂材料在IGBT模块封装中最主要的作用是灌封和传递模塑成型。
IGBT模块用环氧灌封胶(epoxy potting adhesive)一般是在完成有机硅凝胶灌封后再进行灌封,经固化后在有机硅凝胶上层形成一层密度大、质地坚硬的保护层,能够起保护和强化模块整体性的作用,对提高模块的抗机械冲击性具有一定的实际意义,这种封装结构方式的IGBT模块在轨道交通上应用较多。IGBT模块灌封用环氧灌封胶主要采用双组分的形式,是由特种环氧树脂、无机填料和助剂等制备而成,其固化物具有很高的阻燃性和较低的CTE值,可以有效隔离外部不利环境的影响。图4为双组分环氧灌封胶及其灌封后焊接式IGBT模块的照片。环氧灌封胶的供应商有很多,如亨斯曼(HUNSTMAN)、3M(Minnesota Mining and Manufacturing)、爱玛森康明(Emerson & Cuming)等。表2为两种环氧灌封胶应用在IGBT模块封装的性能比较。从表2可以看出,两种IGBT模块封装用环氧灌封胶都具有硬度高、黏度较大的特点,可能需要配合较专业的灌胶设备进行施胶。
普通双酚A型环氧树脂制备的环氧灌封胶在 -40℃的低温下会发生收缩和开裂,导致封装失效;在超过150℃的高温下会发生软化,丧失部分力学性能和介电性能;在超过200℃高温下一段时间后又会发生化学键的断裂,产生小分子挥发物质,因此对于运行温度达200℃的碳化硅IGBT模块的封装会存在很多问题。通过改善IGBT模块灌封用环氧灌封胶的耐高温性、抗开裂性、CTE值以及施胶工艺来提高模块的可靠性等是需要重点关注的发展方向。
本课题组之前利用双酚A型环氧和酸酐制备出适合IGBT灌封的环氧灌封胶,其性能可以承受1 000次以上-40~125℃的冷热冲击循环测试[17-18],并在此基础上对该环氧灌封胶的黏度建立模型方程,预测了50~90℃内环氧灌封胶的流变特性,为施胶工艺提供了有价值的参考[19]。为了开发耐热性更好的IGBT环氧灌封胶,本课题组又以耐高温的特种环氧树脂为主体树脂,碳化硅和阻燃性好的氢氧化铝为填料,制备出在高温下力学性能良好、介电性能高的IGBT环氧灌封胶,其玻璃化转变温度超过200℃,可以满足大功率IGBT模块的灌封要求[20]。LI Z等[21-22]研究了纯环氧灌封胶、含5%纳米氧化铝、含60%微米氧化铝以及含2%纳米氧化铝和60%微米氧化铝的4种不同环氧灌封胶,研究了不同粒径氧化铝填充对环氧灌封胶介电强度和局放特性的影响,认为纳米填料的加入是提高微米填充环氧灌封胶介电强度和降低局放特性的一种有效途径。三菱电机[23-24]率先开发了一种黏度低、玻璃化转变温度高、热稳定性好、粘接强度高的液态环氧灌封树脂,并结合绝缘金属基板封装IGBT模块对封装的模块进行了可靠性研究,发现这种封装方式能减少IGBT芯片下的焊料裂纹,极大提高了热循环试验寿命。采用DP树脂灌封(如图5(a)所示)与有机硅凝胶灌封IGBT模块(如图5(b)所示)有很大的区别,其对环氧灌封胶的性能及施胶要求较高,特别是需要解决环氧树脂固化收缩率较高和CTE值与芯片差别过大的问题。图6为三菱电机采用DP树脂和绝缘金属基板(IMB)技术封装的LV100 IGBT模块照片。
环氧模塑树脂(EMC)又叫环氧模塑料,主要成型方式为传递模塑成型。传递模塑成型是从湿法铺层和注射工艺中演变而来的一种热固性塑料的成型方法25。一般是先将EMC树脂在加热室加热软化,借助于柱塞压力使其通过胶口进入加热的模腔,然后在加热好的模腔中加热成型,最后完成脱模,其成型工艺过程如图7所示。
EMC在IGBT模块封装上的市场量虽不及在分立器件上的市场量大,但是随着电动汽车技术的不断成熟和市场规模的不断扩大,应用于IGBT模块塑封成型的EMC树脂的市场量也会有较大增长。IGBT模块封装对EMC树脂的性能要求较高,如较好的成型性、良好的耐热性、较高的机械强度和电气绝缘性以及较低的热膨胀系数,并且对水汽透过率要求很高。EMC树脂主要由环氧树脂(如邻甲酚醛环氧、联苯型环氧等)、固化剂(如酚醛树脂、酸酐等)和填料(如二氧化硅、氮化铝等),再配合阻燃剂、催化剂、偶联剂和脱模剂等助剂组成,典型的EMC树脂的组成如图8所示。
IGBT模块封装用EMC树脂主要供应商有信越化学(Shin-Etsu Chemical)、京瓷化学(Kyocera Chemical)、日立化成(Hitachi Chemical)、住友电木(Sumitomo Bakelite)等。
随着新一代模块封装技术,特别是应用于汽车的双面散热IGBT模块的发展[26],EMC树脂也越来越受到人们的关注,对EMC树脂中对电子元件有影响的不纯物含量、与引线框架的粘接性、耐热性以及热膨胀系数等都提出了新的要求;阻燃性、无卤和绿色环保也是EMC树脂的重要发展方向,表3为3种应用于双面散热功率模块的EMC树脂性能。图9为英飞凌公司推出的新能源电动汽车用双面散热IGBT模块照片,该模块采用高性能EMC树脂封装,其散热效率和可靠性得到了极大的提升。
功率模块封装所采用的塑料框架必须达到很高的技术要求,如在工作温度区间内(如轨道交通用IGBT模块长期运行温度为-55~125℃)具有较高的拉伸强度且机械强度稳定,能承受短期超过250℃的高温以适用中低功率模块的焊接工艺。此外必须具有很好的电气绝缘性能,相比电痕化指数要求较高且能承受高度的电磁污染,无卤和氧化锑等有害物质,且能满足激光打标等要求[4]
目前功率模块塑料框架所采用的材料较为普遍的有聚酰胺(polyamide,PA)、聚对苯二甲酸乙二醇酯(polyethyleneglycol terephthalate,PET)、聚对苯二甲酸丁二醇酯(polybutylene terephthalate,PBT)等。图10为改性PA粒料及采用PA粒料注塑成型的IGBT模块框架。随着大功率IGBT模块的发展,对模块的安全可靠性提出了更高的要求,机械强度和玻璃化转变温度更高的特种工程塑料如聚邻苯二甲酰胺(polyphthalamide,PPA)以及聚苯硫醚(polyphenylene sulfide,PPS)被应用于制造IGBT塑料框架,所封装的IGBT模块主要应用于轨道交通中。杜邦(DuPont)、巴斯夫(BASF)、东丽(TORAY)、三菱(Mitsubishi)等公司的材料具有性能优势,表4为5种制造塑料框架材料的基本性能。
随着碳化硅等功率模块运行温度的上升,强度高、尺寸稳定性高、耐高温、相比电痕化指数(CTI)高、加工性好的塑料框架是需要关注的发展方向。杨克俭等[27-28]开发出一种尼龙,这种材料具有熔体流动性高、无卤环保、阻燃性好、电性能及力学性能优异等优点,制品翘曲低、平整度高,适合用来加工IGBT塑料框架。唐毅平等[29]将功能性三嗪环与尼龙通过熔融共混改性得到耐高温、耐高电压的改性尼龙,该尼龙可应用于IGBT框架的制造,能够满足IGBT模块在高温高电压下的使用要求。路宏伟等[30]将PPS与超高分子量聚乙烯共混,改善了PPS的耐冲击性和电气绝缘性能,再用玻璃纤维增强,得到具备优异力学性能和电气绝缘性能的复合树脂,拓展了PPS在IGBT塑料框架中的应用。
工程塑料在IGBT模块封装中的另一个应用是在压接型模块中被加工成子模组的安装座使用,多数是经玻璃纤维或碳纤维增强后的聚醚醚酮(PEEK)加工而成。图11为典型的压接型IGBT模块示意图及压接型IGBT模块中所采用的子模组结构,其中子模组的安装座采用的材料为PEEK。PEEK作为一种新型的工程塑料具有硬度大、承压能力强、耐受温度高、尺寸稳定性好的特点[31-32]。英国威格斯(Victrex)公司生产的PEEK具有性能稳定、耐热性能较高的优势。WANG H Y等[33-34]通过优化压接型IGBT模块的PEEK框架和管芯之间的气隙来改善模块的绝缘性能,并对PEEK在压接型IGBT模块中的应用情况进行了介绍。M SWEET等[35]研究了PEEK盒式设计对4 500 V压装IGBT模块击穿性能的影响。
除了上述在功率模块封装中应用较为普遍的高分子材料,还有在功率模块芯片或覆铜陶瓷衬板(DBC)表面涂覆以提高模块耐压能力、降低局部放电量的高分子涂覆材料。
派瑞林(parylene)是上世纪60年代由美国联合碳化物公司所开发的一种厚度均匀、致密、绝缘性高、透明、防霉、防潮气、耐盐雾的新型涂覆材料。parylene主链为聚对二甲苯结构,可分为N型、C型、D型、HT型等,其分子结构如图12所示,基本性能如表5所示。
其中HT型parylene耐受温度高达500℃,即使在350℃高温下也可以承受5 000 min(美国SCS公司数据),具有极 好的耐高温性和极低的气体渗透率,非常适合大功率高温功率模块的涂覆。
P ASTRID等[36]认为parylene可用于恶劣环境中电子产品的涂覆保护,并分析了采用parylene和有机硅凝胶封装的区别。K B LILAND等[37]研究了硅胶与各种绝缘液体之间的相容性,并研究了parylene、聚酰亚胺(PI)及有机硅凝胶涂层对高压二极管性能的影响。虽然parylene涂覆对于提高模块的稳定性和耐热性具有较明显的作用,但parylene较高的成本限制了其在功率模块封装中的应用。
聚酰亚胺(polyimide,PI)是一种能够长期在 -200~300℃温度下使用、短期耐受温度可达400℃、介电性能好且化学性质稳定的高分子材料,是综合性能最佳的特种高分子材料之一,被广泛应用于航空航天、军事、激光、微电子等领域。本文中的PI涂覆材料是指非光敏聚酰亚胺(non-photosensitive PI),主要用于功率模块芯片封装工艺键合点加强、覆铜层边缘毛刺绝缘处理等。功率模块封装中用PI涂覆料要求达到电子级,加热固化成膜后具有耐高低温、耐腐蚀、耐辐射、耐湿热的优点,且对芯片、铝、铜、玻璃或陶瓷等封装材料具有极好的粘结性能,可用于引线键合点、焊点等薄弱部位的加固或DBC边缘毛刺的处理。目前PI涂覆材料的供应商有日立化成(Hitachi Chemical)、信越化学(Shin-Etsu Chemical)、阿莫科(Amoco)、富士胶片(Fujifilm)等,主要集中在日本和美国,表6列举了3种典型的进口PI涂覆料性能。
L DONZEL等[38]制造并测试了填充有ZnO的PI涂层,并对IGBT模块上涂覆PI的电性能进行了分析。M MORSHED等[39]采用PI对6 500 V的IGBT模块基片的陶瓷进行涂覆,发现通过在PI中添加硅烷偶联剂提高了PI与金属和陶瓷表面的粘合强度,对IGBT模块的局部放电有抑制作用;该研究团队还研究了3种不同的PI对IGBT模块金属陶瓷边缘局部放电的影响,发现PI涂层的厚度对电气强度有影响[40]。PI涂覆材料在功率模块封装的应用中,介电常数、介质损耗、固化工艺、贮存周期等仍是主要的关注点。
高分子材料在功率模块的封装应用具有广阔的市场前景,然而国内与国际的技术差距还比较大。虽然目前高分子材料在功率模块封装上的应用已经做了大量的研究,但还应重点关注材料的耐高温、耐低温、热膨胀系数、CTI和介电强度等性能以及影响材料性能的诸多因素。使用新材料,提高材料性能,降低制造成本,并结合新的封装方式是提高模块可靠性、延长使用寿命的重要手段,也将是高分子封装材料的发展方向,而利用新材料、新技术以及新工艺将使功率模块的可靠性和使用寿命得到质的飞越。
  • 湖南省科技计划基金资助项目(2018XK2202)
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2021年第54卷第5期
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doi: 10.16790/j.cnki.1009-9239.im.2021.05.001
  • 接收时间:2020-06-01
  • 首发时间:2026-03-03
  • 出版时间:2021-05-20
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  • 收稿日期:2020-06-01
  • 修回日期:2020-06-26
基金
湖南省科技计划基金资助项目(2018XK2202)
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    1湖南国芯半导体科技有限公司, 湖南 株洲 412001
    2湖南省功率半导体创新中心, 湖南 株洲 412001
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2种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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