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Article(id=1210590153140203880, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1210590152548807015, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2024.09.013, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1694102400000, receivedDateStr=2023-09-08, revisedDate=1700150400000, revisedDateStr=2023-11-17, acceptedDate=null, acceptedDateStr=null, onlineDate=1766556784186, onlineDateStr=2025-12-24, pubDate=1726761600000, pubDateStr=2024-09-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1766556784186, onlineIssueDateStr=2025-12-24, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1766556784186, creator=13701087609, updateTime=1766556784186, updator=13701087609, issue=Issue{id=1210590152548807015, tenantId=1146029695717560320, journalId=1149653034449285133, year='2024', volume='57', issue='9', pageStart='1', pageEnd='165', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1766556784044, creator=13701087609, updateTime=1766563998200, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1210620410958312217, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1210590152548807015, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1210620410958312218, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1210590152548807015, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=125, endPage=130, ext={EN=ArticleExt(id=1210590153400250731, articleId=1210590153140203880, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Research on surface microdefect detection of GIS/GIL epoxy insulation materials based on photon counting, columnId=1192878364340924664, journalTitle=Insulating Materials, columnName=Test and Analysis, runingTitle=null, highlight=null, articleAbstract=

To address the limitations of traditional methods in accurately detecting micro-defects in epoxy-based insulation, we proposed a novel defect detection method based on photon emission counting analysis under different defect influence. Insulation rod and insulation spacer samples with scratches, surface protrusions, and metal particles were prepared, and their photon counting before partial discharge inception was tested under AC voltage excitation. The results indicate that the average photon counting of samples with severe defects is 12 times higher than that of samples without defects. The photon counting results are significantly influenced by defect types, sizes, position, and insulation gas, and the average photo counting is positively correlated with the defect severity. Therefore, the photon counting can be as a promising tool for early detection of defects in epoxy-based insulation materials.

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为弥补传统方法对环氧基绝缘微缺陷探测精度的不足，本文基于不同缺陷影响下光子释放信息的计数分析提出了一种新的缺陷检测方法。通过制备具有划痕、表面毛刺及金属微粒缺陷的绝缘拉杆及盆式绝缘子样本，进而在交流电压激励下获得上述样本局放起始前的光子计数结果。结果表明：严重缺陷样本平均光子计数可高达无缺陷样本平均光子计数的12倍以上，且光子计数结果受缺陷种类、尺寸、位置及绝缘气体影响显著，其中平均光子计数与缺陷严重程度呈正相关。因此，光子计数可作为探测环氧基绝缘材料早期缺陷的潜在工具。

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范贤浩（1995-），男（汉族），甘肃兰州人，助理研究员，主要从事特高压气体绝缘装备缺陷检测的研究。
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公多虎（1986-），男（汉族），甘肃高台人，高级工程师，主要从事特高压气体绝缘装备缺陷检测的研究。

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公多虎（1986-），男（汉族），甘肃高台人，高级工程师，主要从事特高压气体绝缘装备缺陷检测的研究。

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公多虎（1986-），男（汉族），甘肃高台人，高级工程师，主要从事特高压气体绝缘装备缺陷检测的研究。

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项目取值项目取值
短波极限/nm185脉冲对分辨率/ns35
长波极限/nm900输出脉冲宽度/ns30
峰值波长/nm400计数线性度/s-12.5×106
), ArticleFig(id=1218262756176871754, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1210590153140203880, language=CN, label=表1, caption=

光子计数探头性能参数

, figureFileSmall=null, figureFileBig=null, tableContent=
项目取值项目取值
短波极限/nm185脉冲对分辨率/ns35
长波极限/nm900输出脉冲宽度/ns30
峰值波长/nm400计数线性度/s-12.5×106
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基于光子计数测量的GIS/GIL环氧绝缘材料表面微缺陷检测研究
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公多虎 1 , 范贤浩 2 , 詹仲强 1 , 李山 1 , 迪力亚尔·多力昆 1 , 李传扬 2
绝缘材料 | 测试与分析 2024,57(9): 125-130
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绝缘材料 | 测试与分析 2024, 57(9): 125-130
基于光子计数测量的GIS/GIL环氧绝缘材料表面微缺陷检测研究
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公多虎1, 范贤浩2, 詹仲强1, 李山1, 迪力亚尔·多力昆1, 李传扬2
作者信息
  • 1国网新疆电力有限公司电力科学研究院,新疆 乌鲁木齐 830000
  • 2清华大学 电机系,北京 100084

    • 公多虎（1986-），男（汉族），甘肃高台人，高级工程师，主要从事特高压气体绝缘装备缺陷检测的研究。

通讯作者:

范贤浩（1995-），男（汉族），甘肃兰州人，助理研究员，主要从事特高压气体绝缘装备缺陷检测的研究。
Research on surface microdefect detection of GIS/GIL epoxy insulation materials based on photon counting
Duohu GONG1, Xianhao FAN2, Zhongqiang ZHAN1, Shan LI1, DILIYAER·Duolikun1, Chuanyang LI2
Affiliations
  • 1State Grid Xinjiang Electric Power Co., Ltd. Electric Power Science Research Institute, Urumqi 830000, China
  • 2Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
出版时间: 2024-09-20 doi: 10.16790/j.cnki.1009-9239.im.2024.09.013
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摘要
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为弥补传统方法对环氧基绝缘微缺陷探测精度的不足，本文基于不同缺陷影响下光子释放信息的计数分析提出了一种新的缺陷检测方法。通过制备具有划痕、表面毛刺及金属微粒缺陷的绝缘拉杆及盆式绝缘子样本，进而在交流电压激励下获得上述样本局放起始前的光子计数结果。结果表明：严重缺陷样本平均光子计数可高达无缺陷样本平均光子计数的12倍以上，且光子计数结果受缺陷种类、尺寸、位置及绝缘气体影响显著，其中平均光子计数与缺陷严重程度呈正相关。因此，光子计数可作为探测环氧基绝缘材料早期缺陷的潜在工具。

环氧基绝缘  /  盆式绝缘子  /  光子计数  /  局部放电  /  缺陷检测

To address the limitations of traditional methods in accurately detecting micro-defects in epoxy-based insulation, we proposed a novel defect detection method based on photon emission counting analysis under different defect influence. Insulation rod and insulation spacer samples with scratches, surface protrusions, and metal particles were prepared, and their photon counting before partial discharge inception was tested under AC voltage excitation. The results indicate that the average photon counting of samples with severe defects is 12 times higher than that of samples without defects. The photon counting results are significantly influenced by defect types, sizes, position, and insulation gas, and the average photo counting is positively correlated with the defect severity. Therefore, the photon counting can be as a promising tool for early detection of defects in epoxy-based insulation materials.

epoxy-based insulation  /  insulation spacer  /  photon counting  /  partial discharge  /  defect detection
公多虎, 范贤浩, 詹仲强, 李山, 迪力亚尔·多力昆, 李传扬. 基于光子计数测量的GIS/GIL环氧绝缘材料表面微缺陷检测研究. 绝缘材料, 2024 , 57 (9) : 125 -130 . DOI: 10.16790/j.cnki.1009-9239.im.2024.09.013
Duohu GONG, Xianhao FAN, Zhongqiang ZHAN, Shan LI, DILIYAER·Duolikun, Chuanyang LI. Research on surface microdefect detection of GIS/GIL epoxy insulation materials based on photon counting[J]. Insulating Materials, 2024 , 57 (9) : 125 -130 . DOI: 10.16790/j.cnki.1009-9239.im.2024.09.013
正文
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0 引言
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环氧基绝缘材料凭借其优异的电气性能及力学性能广泛应用于气体绝缘金属封闭组合电器（GIS）及气体绝缘输电管道（GIL）[1-2]。然而，由于生产工艺、运输安装及日常运维等诸多因素，导致GIL/GIS内部环氧基绝缘件出现多种缺陷[3-4]，缺陷的不断发展最终诱发绝缘闪络及击穿事故的发生[5]。因此，实现对处于发展早期的绝缘缺陷的准确探测对于保障设备安全稳定运行具有重大意义。
绝缘带电运行期间，缺陷导致局部电场畸变，当电场足以导致缺陷附近局部击穿时便会诱发局部放电（PD）[6]。PD以不同形式（光[7]、脉冲电流[8]、电磁波[9]、超声波[10]）释放能量，因此基于收集、分析PD过程中的暂态信息可在一定程度上探测缺陷种类及严重程度[11]。然而，一些微缺陷或处于发展早期阶段的缺陷其局部场强仅诱发绝缘气体微电离而不足以引发PD。当观测到明显PD时，绝缘劣化已步入不可逆阶段。因此，在PD起始前对缺陷诱导微电离、微放电信号的有效监测有望实现对绝缘微缺陷或缺陷发展早期阶段的探测及分析。
在交流电压激励下，电荷载流子遵循肖特基原理从电极注入绝缘材料[12]；载流子迁移过程中会被缺陷或带隙产生的陷阱捕获，从而形成空间电荷；极性反转时新注入电荷与入陷载流子发生复合进而通过辐射跃迁方式释放光子产生电致发光（EL）[13-14]。光子导致中性原子光电离产生二次电子发射并增强发光现象。当局部电场增大到一定程度后，绝缘气体分子持续碰撞电离最终诱发PD起始，期间PD造成的发光强度是EL强度的两个数量级以上[15]。因此，EL的触发早于第一次PD起始且被认为是绝缘劣化起始的标志[16-17]。鉴于系统内发光强度由固体绝缘EL过程及气体微电离后辐射跃迁所造成的发光共同组成[18]，因此，对绝缘缺陷诱导下光子释放信息的计数分析有望实现对环氧基绝缘微缺陷的探测及早期预警。
本文首先利用绝缘拉杆及盆式绝缘子制备具有表面划痕、表面毛刺及金属微粒缺陷的样本；随后在交流电压激励下测得局部放电起始前各缺陷样本所对应的光子计数结果；最后研究对比缺陷种类、尺寸及位置对光子计数结果的影响。研究结果为气体绝缘装备微缺陷检测提供了新思路。
1 微电离-放电光电同步测量平台
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为获得缺陷诱导下发光过程中的光子释放信息，搭建了如图1所示的光电同步测量平台。测量平台包括交流电压源、GIL/GIS缩比实验腔室、UHF传感器、光子计数探头（H8259-01，Hamamatsu光子）、信号采集卡（PicoScope 2000，采样率为100 MS/s~1 GS/s）及计算机。其中，信号采集卡用于同步采集，可视化来自UHF的局放信号及光子计数探头的测量结果；光子计数探头设备性能参数见表1。
试验时，温度保持为室温。为探究气体种类对发光强度的影响，绝缘拉杆试验及盆式绝缘子试验分别使用0.1 MPa的空气及0.1 MPa的N2气体。为避免外界环境对UHF局放监测结果及光子计数结果造成影响，测量装置及实验腔室置于电磁屏蔽的暗室。在光子计数测量中，光密闭条件下的暗计数为30。每次电压施加后保持10 min，待极化过程稳定后每次测量持续500 s，测量3次并取平均值，所记录光子计数结果的单位均为个/秒（pes）。此外，根据UHF局放监测结果，绝缘拉杆及盆式绝缘子缺陷样本在本文试验条件下的PD稳定起始电压分别约为4.8 kV及4.2 kV。因此，为实现PD起始前样本光子计数的测量，本文所用激励电压均为AC 3 kV。
2 绝缘拉杆缺陷检测分析
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2.1 表面划痕缺陷
为探究光子计数用于检测分析绝缘拉杆表面划痕缺陷的适用性，采用山东泰开绝缘公司生产的110 kV GIS用玻璃纤维增强环氧树脂绝缘拉杆（密度为1.63 g/m3，相对介电常数为4.13），采用人工方式在其表面分别制造长度约为6、11、16 mm的划痕，如图2所示。然后基于图1所示测量平台在AC 3 kV激励电压下测试得到对应于不同划痕长度的光子计数结果，如图3所示。从图3可以看出，无缺陷，6、11、16 mm划痕缺陷所对应的平均光子计数分别为17、23、137、220 pes。可见划痕缺陷的加重显著增加了光子计数结果，6 mm划痕缺陷所对应的光子计数结果是无缺陷样本光子计数结果的1.35倍，而当划痕长度增加至16 mm时，光子计数结果则扩大为无缺陷样本光子计数结果的12.9倍。主要原因为划痕缺陷的出现导致周围电场畸变，并通过诱发空气电离进而在辐射跃迁过程中释放光子增强了发光强度。对于11 mm划痕缺陷而言，由于局部电场不足以稳定触发空气电离，其光子计数结果波动较大。
2.2 表面附着毛刺缺陷
为模拟绝缘拉杆运行过程中金属微粒附着表面，利用5 mm长且不同宽度的铝箔粘附于拉杆表面形成表面金属毛刺缺陷，如图4所示。然后在AC 3 kV激励电压下测试得到对应于不同宽度毛刺下的光子计数结果，如图5所示。
从图5可以看出，无缺陷，0.5、1.0、1.5 mm毛刺缺陷所对应的平均光子计数分别为17、98、104、126 pes，其中0.5 mm毛刺与1.5 mm毛刺的光子计数结果分别为无缺陷样本光子计数结果的5.76倍及7.41倍。轻微缺陷状态下，0.5 mm毛刺缺陷诱导下的光子计数结果明显大于6 mm划痕缺陷对应的数据，表明这一阶段下的光子响应对毛刺缺陷的存在更为敏感。随着缺陷严重程度的加深，毛刺缺陷尖端场强畸变严重，诱导空气电离/微放电，导致光子数逐渐增大。此外，由表面附着金属毛刺诱发的发光波动更大，说明其内部发光机制并不稳定。主要原因为毛刺缺陷无法像划痕缺陷一样为电致发光过程提供有利、稳定的异性电荷复合的条件，仅通过使毛刺尖端电场畸变诱发空气电离，最终产生不稳定的光子释放。
3 盆式绝缘子缺陷检测分析
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与绝缘拉杆不同，盆式绝缘子同时用于GIS及GIL装备并发挥隔离气室、支撑及绝缘的作用。为探究光子计数用于检测分析盆式绝缘子缺陷的可行性，本节利用缩比盆式绝缘子及管道在实验室内分别搭建金属微粒、表面划痕及附着毛刺缺陷试验平台，缺陷布置如图6所示。此外，为探究不同气体下的光子释放特性，实验腔室内所用气体为0.1 MPa的N2气体，测试温度及激励电压与章节2保持一致。
3.1 金属微粒缺陷
气体绝缘装备制造过程中的加工、焊接、切割等工艺操作以及装备长期使用过程中的摩擦、振动及热胀冷缩等因素均可能产生微小金属颗粒[19]。金属颗粒在电场力的作用下起跳撞击并可能吸附于绝缘子表面，造成盆式绝缘子表面电场分布严重畸变并诱发闪络事故[20]。因此，选用3种金属微粒（块状微粒1，直径为0.5 mm；块状微粒2，直径为1 mm；球状微粒3，直径为1 mm）验证光子计数对微粒起跳前（置于外壳管道上）的探测效果。图7为无缺陷及3种金属微粒缺陷对应的光子计数结果。从图7可以看出，相对于块状微粒而言，球状微粒发光曲线较为平稳。这是由于块状微粒存在尖端，其对应曲率半径较大，因此局部场强更高，更易于引发空气电离进而产生脉冲状发光特性。此外，相同激励电压下，N2下无缺陷及3种金属微粒缺陷所对应的光子计数平均值分别达到820、1 745、2 111、1 757 pes。一方面，当外加电场作用于N2时，电场会拉伸N2分子，使得原子之间的距离增大且电子云密度减小，从而降低分子内部排斥力；另一方面，N2的离化能相对较低，意味着较少的能量就足以将原子从分子中解离出来，形成正离子和自由电子[21]。因此，在电场作用下，N2分子相较于空气更容易发生电离。为验证这一结论，通过相同测量条件下的重复试验发现：无缺陷盆式绝缘子在空气及SF6气体下的光子计数平均值分别为499 pes及65 pes，仅为N2下光子计数平均值的61%及8%；相同缺陷及测试条件下，空气及SF6气体下的光子计数平均值亦远低于N2环境。
值得一提的是，相同测试条件下，空气下无缺陷绝缘拉杆的光子计数平均值为17 pes，而无缺陷盆式绝缘子的光子计数平均值为499 pes，这是因为盆式绝缘子在交流电压作用下建立极化的过程中，其内部发生偶极子的转动及电子的重新分布[22]。当外加电场改变分子或原子的能级分布时，可能会引起电子从低能级向高能级跃迁。当电子回到基态能级时，会释放出能量，这部分能量以光子的形式耗散出去，从而产生光子释放[22]。
3.2 表面划痕缺陷
由于安装及操作不当、污染物表面刮擦、设备异常振动、冲击等原因，盆式绝缘子表面会出现划痕缺陷。与章节2.1类似，通过在盆式绝缘子表面人工制造长度不同的划痕进而模拟表面划痕缺陷。根据图6，3种划痕缺陷的长度分别为3、5、7 mm，所对应的光子计数结果见图8。从图8可以看出，无缺陷及3种划痕缺陷所对应的平均光子计数结果分别为820、958、2 022、3 087 pes，可见光子计数结果大小与表面划痕缺陷的尺寸呈正比，这一现象与章节2.1结论一致。与绝缘拉杆不同，盆式绝缘子法向场强导致空气电离产生的电荷在电压激励下更容易向盆式绝缘子表面移动。缺陷的存在造成大量陷阱使电荷入陷，极性反转时新注入的电荷与上一周期无法脱陷的异性电荷在库伦力的作用下发生复合，进而通过辐射跃迁的方式释放光子，导致电致发光强度显著增加。
此外，与图7所示金属微粒导致的发光不同，表面划痕缺陷的出现为电荷的积聚创造了更加有利的条件，在每个交流负极性期间都促成了稳定的电致发光，使其所对应的光子计数结果相对稳定。
3.3 表面附着毛刺缺陷
与章节2.2不同，本节通过保持接地金属毛刺尺寸不变，通过改变毛刺缺陷距离金属导体的距离进而探究表面附着毛刺缺陷位置对光子释放特性的影响。金属毛刺缺陷尺寸及位置如图9所示，所对应的光子计数结果见图10。
从图10可以看出，无缺陷及3种金属毛刺缺陷位置所对应的平均光子计数为820、1 183、1 265、1 385 pes，与章节3.1及3.2的结果类似，造成这一现象的原因是N2更容易电离。
此外，观察发现光子计数结果与距离高压导体的距离呈反比，临近高压导体的光子计数结果是距离高压导体30 mm时的1.17倍。造成这一现象的原因可归咎为靠近高压导体时毛刺缺陷处于电极-绝缘-空气三相交界面处，缺陷引起的电场畸变程度更为严重。
4 讨论
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当前结果表明，绝缘缺陷尺寸（严重程度）与所对应的光子计数结果呈正相关。为验证这一结果，以章节2中绝缘拉杆表面划痕及表面毛刺缺陷为例，以缺陷尺寸为自变量，以所对应的平均光子计数结果为因变量，假设无缺陷样本缺陷尺寸为0.1 mm，运用拟合分析得到了缺陷尺寸与平均光子数间的拟合方程，拟合优度分别为0.95及0.97，如图11所示。因此，在本文试验条件下，平均光子计数与绝缘缺陷严重程度（尺寸）呈正相关，且增长趋势可使用指数函数描述。
5 结论
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针对传统微缺陷检测面临检测精度差及干扰等问题，本文基于环氧绝缘材料电场激励下的电致发光现象提出了一种基于光子计数的微缺陷检测方法，利用缺陷绝缘拉杆及盆式绝缘子样本验证了该方法的可行性，得出如下结论：
（1）绝缘缺陷的出现导致周围电场畸变，并通过诱发空气电离进而在辐射跃迁过程中释放光子增强发光强度。当缺陷的存在创造出有利的异性电荷复合条件时，其发光相对稳定，且发光特性受缺陷种类、尺寸及位置影响显著，其中平均光子计数与缺陷严重程度呈正相关。
（2）绝缘气体种类严重影响光子释放，离化能越低的气体更容易电离产生额外光子发射。因此为避免气体电离对电致发光造成的影响，可使用绝缘性能更好的气体（SF6）。
综上，在本文试验中，光子计数对不同种类及尺寸的缺陷均保持较高灵敏度，光子计数结果的差异均可直观体现缺陷存在与否对测量结果产生的影响程度。因此，光子计数测量为环氧基绝缘材料的微缺陷检测提供了一种潜在的解决思路。
基金
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  • 国网新疆电力有限公司2023年科技项目(5230DK230006)
文献
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2024年第57卷第9期
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doi: 10.16790/j.cnki.1009-9239.im.2024.09.013
  • 接收时间：2023-09-08
  • 首发时间：2025-12-24
  • 出版时间：2024-09-20
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  • 收稿日期：2023-09-08
  • 修回日期：2023-11-17
基金
国网新疆电力有限公司2023年科技项目(5230DK230006)
作者信息
    1国网新疆电力有限公司电力科学研究院,新疆 乌鲁木齐 830000
    2清华大学 电机系,北京 100084

通讯作者:

范贤浩（1995-），男（汉族），甘肃兰州人，助理研究员，主要从事特高压气体绝缘装备缺陷检测的研究。
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2种不同金属材料的力学参数
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Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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