Article(id=1203281562138816820, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1203281560800830004, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2025.05.007, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1723478400000, receivedDateStr=2024-08-13, revisedDate=1730736000000, revisedDateStr=2024-11-05, acceptedDate=null, acceptedDateStr=null, onlineDate=1764814280303, onlineDateStr=2025-12-04, pubDate=1747670400000, pubDateStr=2025-05-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1764814280303, onlineIssueDateStr=2025-12-04, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1764814280303, creator=13701087609, updateTime=1764814280303, updator=13701087609, issue=Issue{id=1203281560800830004, tenantId=1146029695717560320, journalId=1149653034449285133, year='2025', volume='58', issue='5', pageStart='1', pageEnd='144', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=0, articleOrder=1, issueType=-1, specialIssue=null, createTime=1764814279985, creator=13701087609, updateTime=1764814963861, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1203284429251784784, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1203281560800830004, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1203284429251784785, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1203281560800830004, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=49, endPage=54, ext={EN=ArticleExt(id=1203281563359359286, articleId=1203281562138816820, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Synthesis and performance characterization of h-BN/PI high thermal conductive composites, columnId=1190369066675179686, journalTitle=Insulating Materials, columnName=Material Research, runingTitle=null, highlight=

To solve the problem of poor thermal conductivity of polyimide (PI), PI was doped with hexagonal boron nitride (h-BN) modified by a surface wetting agent (F068) through in-situ polymerization, and then a series of h-BN/PI high thermal conductivity composites were prepared. The structure of h-BN/PI composites was characterized by Fourier transform infrared spectroscopy and scanning electron microscopy. The thermal conductivity mechanism of h-BN/PI composites was explored by introducing the Y.Agari model, and the influence of modified h-BN filler doping content on the thermal conductivity, mechanical, heat resistance, and insulating properties of the composites was analyzed. The results show that with the increase of modified h-BN doping content, the thermal conductivity and thermal stability of h-BN/PI composites increase, while their tensile strength, elongation at break, and electric strength exhibit a significant downward trend. When the doping amount of modified h-BN is less than 30%, the influence of polymer crystal size factor on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is higher than 30%, the influence of the free factor of the thermal chain formed by thermal conductive particles on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is 50%, the thermal conductivity of h-BN/PI composite reaches 0.83 W/(m·K), the electric strength is 198.6 kV/mm, the 5% thermal decomposition temperature is 595℃, the tensile strength is 64.8 MPa, and the elongation at break is 10.4%.

, articleAbstract=

To solve the problem of poor thermal conductivity of polyimide (PI), PI was doped with hexagonal boron nitride (h-BN) modified by a surface wetting agent (F068) through in-situ polymerization, and then a series of h-BN/PI high thermal conductivity composites were prepared. The structure of h-BN/PI composites was characterized by Fourier transform infrared spectroscopy and scanning electron microscopy. The thermal conductivity mechanism of h-BN/PI composites was explored by introducing the Y.Agari model, and the influence of modified h-BN filler doping content on the thermal conductivity, mechanical, heat resistance, and insulating properties of the composites was analyzed. The results show that with the increase of modified h-BN doping content, the thermal conductivity and thermal stability of h-BN/PI composites increase, while their tensile strength, elongation at break, and electric strength exhibit a significant downward trend. When the doping amount of modified h-BN is less than 30%, the influence of polymer crystal size factor on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is higher than 30%, the influence of the free factor of the thermal chain formed by thermal conductive particles on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is 50%, the thermal conductivity of h-BN/PI composite reaches 0.83 W/(m·K), the electric strength is 198.6 kV/mm, the 5% thermal decomposition temperature is 595℃, the tensile strength is 64.8 MPa, and the elongation at break is 10.4%.

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为解决聚酰亚胺(PI)导热性能欠佳的问题,本文利用原位聚合将表面湿润剂(F068)改性的六方氮化硼(h-BN)对PI进行掺杂,制备了一系列h-BN/PI高导热复合材料。采用傅里叶变换红外光谱与扫描电镜对h-BN/PI复合材料的结构进行表征,通过引入Y.Agari模型探讨h-BN/PI复合材料的导热机理,并分析改性h-BN填料掺杂量对复合材料导热、力学、耐热和绝缘等性能的影响。结果表明:随着改性h-BN掺杂量的增加,h-BN/PI复合材料的导热性能和热稳定性有所提高,但其拉伸强度、断裂伸长率和电气强度均呈现明显下降趋势;当改性h-BN掺杂量低于30%时,聚合物结晶尺寸因子对复合材料导热系数的影响占主导作用,当改性h-BN掺杂量高于30%时,导热粒子形成的导热链自由因子对复合材料导热系数的影响占主导作用;当改性h-BN掺杂量为50%时,h-BN/PI复合材料的导热系数达0.83 W/(m·K),电气强度为198.6 kV/mm,5%热分解温度为595℃,拉伸强度为64.8 MPa,断裂伸长率为10.4%。

, articleAbstract=

为解决聚酰亚胺(PI)导热性能欠佳的问题,本文利用原位聚合将表面湿润剂(F068)改性的六方氮化硼(h-BN)对PI进行掺杂,制备了一系列h-BN/PI高导热复合材料。采用傅里叶变换红外光谱与扫描电镜对h-BN/PI复合材料的结构进行表征,通过引入Y.Agari模型探讨h-BN/PI复合材料的导热机理,并分析改性h-BN填料掺杂量对复合材料导热、力学、耐热和绝缘等性能的影响。结果表明:随着改性h-BN掺杂量的增加,h-BN/PI复合材料的导热性能和热稳定性有所提高,但其拉伸强度、断裂伸长率和电气强度均呈现明显下降趋势;当改性h-BN掺杂量低于30%时,聚合物结晶尺寸因子对复合材料导热系数的影响占主导作用,当改性h-BN掺杂量高于30%时,导热粒子形成的导热链自由因子对复合材料导热系数的影响占主导作用;当改性h-BN掺杂量为50%时,h-BN/PI复合材料的导热系数达0.83 W/(m·K),电气强度为198.6 kV/mm,5%热分解温度为595℃,拉伸强度为64.8 MPa,断裂伸长率为10.4%。

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刘杰(1988-),男(汉族),湖南益阳人,工程师,主要从事聚酰亚胺材料及其工程化应用的研究;

杨军(1972-),男(汉族),湖南株洲人,教授级高级工程师,主要从事高分子材料及其工程化应用的研究。

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刘杰(1988-),男(汉族),湖南益阳人,工程师,主要从事聚酰亚胺材料及其工程化应用的研究;

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刘杰(1988-),男(汉族),湖南益阳人,工程师,主要从事聚酰亚胺材料及其工程化应用的研究;

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杨军(1972-),男(汉族),湖南株洲人,教授级高级工程师,主要从事高分子材料及其工程化应用的研究。

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杨军(1972-),男(汉族),湖南株洲人,教授级高级工程师,主要从事高分子材料及其工程化应用的研究。

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h-BN/PI高导热复合材料制备及其性能表征
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刘杰 , 杨军 , 江乾 , 徐江 , 高纪明 , 杨海洋 , 黄安民 , 王进
绝缘材料 | 材料研究 2025,58(5): 49-54
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绝缘材料 | 材料研究 2025, 58(5): 49-54
h-BN/PI高导热复合材料制备及其性能表征
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刘杰, 杨军, 江乾, 徐江, 高纪明, 杨海洋, 黄安民, 王进
作者信息
  • 株洲时代新材料科技股份有限公司,湖南 株洲 412007
  • 刘杰(1988-),男(汉族),湖南益阳人,工程师,主要从事聚酰亚胺材料及其工程化应用的研究;

    杨军(1972-),男(汉族),湖南株洲人,教授级高级工程师,主要从事高分子材料及其工程化应用的研究。

Synthesis and performance characterization of h-BN/PI high thermal conductive composites
Jie LIU, Jun YANG, Qian JIANG, Jiang XU, Jiming GAO, Haiyang YANG, Anmin HUANG, Jin WANG
Affiliations
  • Zhuzhou Times New Material Technology Co., Ltd., Zhuzhou 412007, China
出版时间: 2025-05-20 doi: 10.16790/j.cnki.1009-9239.im.2025.05.007
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为解决聚酰亚胺(PI)导热性能欠佳的问题,本文利用原位聚合将表面湿润剂(F068)改性的六方氮化硼(h-BN)对PI进行掺杂,制备了一系列h-BN/PI高导热复合材料。采用傅里叶变换红外光谱与扫描电镜对h-BN/PI复合材料的结构进行表征,通过引入Y.Agari模型探讨h-BN/PI复合材料的导热机理,并分析改性h-BN填料掺杂量对复合材料导热、力学、耐热和绝缘等性能的影响。结果表明:随着改性h-BN掺杂量的增加,h-BN/PI复合材料的导热性能和热稳定性有所提高,但其拉伸强度、断裂伸长率和电气强度均呈现明显下降趋势;当改性h-BN掺杂量低于30%时,聚合物结晶尺寸因子对复合材料导热系数的影响占主导作用,当改性h-BN掺杂量高于30%时,导热粒子形成的导热链自由因子对复合材料导热系数的影响占主导作用;当改性h-BN掺杂量为50%时,h-BN/PI复合材料的导热系数达0.83 W/(m·K),电气强度为198.6 kV/mm,5%热分解温度为595℃,拉伸强度为64.8 MPa,断裂伸长率为10.4%。

原位聚合  /  聚酰亚胺  /  导热系数  /  六方氮化硼  /  表面湿润剂

To solve the problem of poor thermal conductivity of polyimide (PI), PI was doped with hexagonal boron nitride (h-BN) modified by a surface wetting agent (F068) through in-situ polymerization, and then a series of h-BN/PI high thermal conductivity composites were prepared. The structure of h-BN/PI composites was characterized by Fourier transform infrared spectroscopy and scanning electron microscopy. The thermal conductivity mechanism of h-BN/PI composites was explored by introducing the Y.Agari model, and the influence of modified h-BN filler doping content on the thermal conductivity, mechanical, heat resistance, and insulating properties of the composites was analyzed. The results show that with the increase of modified h-BN doping content, the thermal conductivity and thermal stability of h-BN/PI composites increase, while their tensile strength, elongation at break, and electric strength exhibit a significant downward trend. When the doping amount of modified h-BN is less than 30%, the influence of polymer crystal size factor on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is higher than 30%, the influence of the free factor of the thermal chain formed by thermal conductive particles on the thermal conductivity of the composites is dominant. When the doping amount of modified h-BN is 50%, the thermal conductivity of h-BN/PI composite reaches 0.83 W/(m·K), the electric strength is 198.6 kV/mm, the 5% thermal decomposition temperature is 595℃, the tensile strength is 64.8 MPa, and the elongation at break is 10.4%.

in-situ polymerization  /  polyimide  /  thermal conductivity  /  hexagonal boron nitride  /  surface wetting agents
刘杰, 杨军, 江乾, 徐江, 高纪明, 杨海洋, 黄安民, 王进. h-BN/PI高导热复合材料制备及其性能表征. 绝缘材料, 2025 , 58 (5) : 49 -54 . DOI: 10.16790/j.cnki.1009-9239.im.2025.05.007
Jie LIU, Jun YANG, Qian JIANG, Jiang XU, Jiming GAO, Haiyang YANG, Anmin HUANG, Jin WANG. Synthesis and performance characterization of h-BN/PI high thermal conductive composites[J]. Insulating Materials, 2025 , 58 (5) : 49 -54 . DOI: 10.16790/j.cnki.1009-9239.im.2025.05.007
聚酰亚胺(PI)是一类分子主链中含有刚性酰亚胺环链节的芳杂环高分子聚合物,具有非常卓越的耐高低温特性,在-269~280℃甚至更高温度下,都能长期保持性能稳定。另外,PI材料还在电气绝缘、力学、阻燃、耐化学和耐辐照等性能方面都具有出色的表现,常被用作轨道交通、电力电子信息、国防军工等高科技领域的结构材料或功能性材料[1-3]。但是,PI材料属于热的不良导体,常规的1,2,4,5-苯四酸酐-4,4′-二氨基二苯醚(PMDA-ODA)型PI材料的导热系数低于0.2 W/(m·K)。随着电力电子信息等设备朝着高功率密度、高精度集成、高速化运行方向发展,热量容易快速聚集在设备或元器件内,从而导致过热甚至失效现象的发生,能否及时快速地将热量传导并散出,已成为影响电力电子信息设备或其元器件长期使用寿命、运行稳定性及安全性的关键因素之一。因此,在保持PI功能材料优异综合性能的同时,如何使其导热性能得到大幅提升,以满足应用端日益增长的散热需求,已成为功能化PI材料的重点研究方向之一[4-6]
通过在PI材料中掺杂无机导热填料,构建PI基有机-无机复合材料,从而实现导热系数提升的目的,是一种较为常见的工艺方法,且制造成本相对较低,工业化生产相对容易实现。氮化硼[7-11]是一种优良的无机导热填料,特别是六方氮化硼(h-BN),其导热系数约为60 W/(m·K),同时还具有较低的吸水性和优异的绝缘性能,并兼具抗氧化和抗腐蚀等特性,是制备高导热型PI材料的理想无机填料。
孙善卫等[12]将BN和Al2O3通过物理混合的方式掺杂进PI浆料中,制备了高导热PI薄膜,该薄膜的导热系数最高可达0.78 W/(m·K)。张婷[13]在使用h-BN的基础上,再分别引入纳米芳纶纤维(ANFs)、碳纳米管(CNT)、纳米银颗粒(AgNPs)等纳米材料对PI浆料进行掺杂,制备了一系列高性能PI复合材料,其中PI/(BN/CNT)@Ag的导热系数相比于纯PI有大幅提升。高梦岩等[14]通过液相法超声分散预处理和高效球磨混合工艺,制备了BN/PI复合薄膜,发现BN填料质量分数达到40%时,薄膜导热系数达到0.74 W/(m·K)。GUO Y Q等[15]利用氧化石墨烯/膨胀石墨作为PI的顶层制备了复合薄膜,该PI复合薄膜具有超高的导热系数。WANG T等[16]通过在六方氮化硼中剥离出纳米氮化硼,利用溶液浇筑工艺制备了PI复合材料,其导热系数为0.44 W/(m·K)。DING D L等[17]将BN片层材料粘附在PI颗粒上,再通过热压法构建有效的3D导热通道,该工艺大幅度提升了PI的导热性能。
本文以微米级h-BN作为无机导热填料,首先采用含酸性基团共聚物的烷羟基铵盐型表面润湿分散剂对h-BN进行表面改性,然后使用原位聚合的方式制备h-BN/PI高导热复合材料,再引入Y.Agari模型[18]探讨复合材料的导热机理,最后考察改性h-BN的掺杂量对PI复合材料导热性能、力学性能、热学性能和电气绝缘性能等的影响。
4,4′-二氨基二苯醚(ODA,纯度≥99.5%),山东万达化工有限公司;1,2,4,5-苯四酸酐(PMDA,纯度≥99.5%),奥沙达化学(苏州)有限公司;N,N-二甲基甲酰胺(DMF,纯度≥99.9%),特胺菱天(南京)精细化工有限公司;六方氮化硼(99.9%,以金属杂质含量为基准,粒径为0.8 μm),上海阿拉丁生化科技股份有限公司;表面润湿分散剂:含酸性基团共聚物的烷羟基铵盐(F068),瓦克化学(中国)有限公司。
Nicolet iS10型傅里叶变换红外光谱(FTIR)仪,美国尼高力仪器公司;Hot Disk TPS 2500S型热常数分析仪,瑞典Hot Disk公司;Ultra 55型扫描电子显微镜(SEM),德国ZEISS公司;DNS-200型电子万能试验机,中机试验装备股份有限公司;ZXIBV-2/10型击穿电压测试系统,桂林彰信检测设备有限公司。
取20 g h-BN无机填料加入至200 g DMF中,连续搅拌12 h。称量0.2 g表面润湿分散剂F068加入上述混合溶液中,并在高速砂磨机下充分研磨2 h,得到表面改性处理的浆料F@h-BN。F@h-BN改性浆料经真空烘干(100℃,12 h)可得到改性h-BN颗粒。
在N2保护和冰浴冷却的条件下,在DMF溶液中加入一定量的二胺(ODA)和F@h-BN改性浆料,充分搅拌均匀,待二胺全部溶解后,分批向混合液中加入二酐单体(PMDA),控制二酐与二胺物质的量之比为1∶1~1.1∶1,当反应体系黏度达到150 Pa∙s时终止反应,得到h-BN/PAA复合树脂,经真空消泡后待用。
采用涂布器将上述h-BN/PAA复合树脂均匀涂覆在玻璃基板上,放入鼓风干燥箱内进行程序升温热亚胺化(120℃/30 min+180℃/30 min+240℃/30 min+300℃/10 min+360℃/5 min),得到厚度为50 μm的h-BN/PI复合材料。按照改性h-BN含量占固体总含量(二胺、二酐和改性h-BN的总质量)的百分比将不同h-BN/PI复合材料分别命名为10%h-BN/PI、20%h-BN/PI、30%h-BN/PI、40%h-BN/PI、50%h-BN/PI。
采用FTIR仪对改性h-BN、h-BN、F068进行结构分析,扫描波数区间为4 000~675 cm-1;采用SEM观察喷金后的h-BN/PI复合材料的表面和断口形貌(在液氮中脆性断裂);按照GB/T 1040.3—2006,采用电子万能试验机测试h-BN/PI复合材料的力学性能,拉伸速率为0.5 mm/min;采用热常数分析仪测试h-BN/PI复合材料在(23±1)℃下的导热系数。
通过对无机填料表面改性处理可较大程度提升聚合物基体与无机填料的界面相容性,改善聚合物基体中无机填料的分散性,从而提高有机-无机材料的结合能力。对表面改性前后的h-BN、表面润湿分散剂F068进行了红外光谱测试,测试结果如图1所示。
图1可以看出,h-BN和改性h-BN都具有1 380 cm-1处B-N键的伸缩振动峰,以及780 cm-1处B-N的弯曲振动峰;在改性h-BN的图谱中还出现了与表面润湿分散剂F068相同的特征峰,如1 732、1 000~1 200、2 800~3 000 cm-1处的特征峰,表明表面润湿分散剂F068对填料h-BN表面进行了包覆,由此证明了F068成功改性h-BN。
对20%h-BN/PI和50%h-BN/PI复合材料表面及截面进行SEM分析,结果如图2所示。从图2可以看出,改性h-BN在PI基体中的分散非常均匀,均呈片层状结构,没有出现大面积的堆积现象。但20%h-BN/PI复合材料中改性h-BN颗粒间的内部搭接数量明显少于50%h-BN/PI复合材料,表明随着无机填料掺杂量的增加,在PI基体内部形成导热网络通道的概率越高。
图3为h-BN/PI复合材料的导热系数随改性h-BN掺杂量的变化趋势图,图中实验数据为3次实验的平均值。从图3可以看出,h-BN/PI复合材料的导热系数呈现随着改性h-BN掺杂量的增加而增大的趋势,当改性h-BN掺杂量小于30%时,h-BN/PI复合材料导热系数随着掺杂量的增加而增大的趋势较为缓慢,当改性h-BN掺杂量大于30%时,h-BN/PI复合材料导热系数随着掺杂量的增加而增大的趋势较为明显,当改性h-BN掺杂量增加至50%时, h-BN/PI复合材料的导热系数达到0.83 W/(m·K)。从曲线可以看出,h-BN/PI导热系数与无机填料的掺杂量呈非线性递增关系。
为了进一步阐明h-BN/PI复合材料的导热机理,引入Y.Agari模型,该模型是Y AGARI等基于考虑高填充复合体系内粒子会发生团聚甚至形成导热链以及粒子对聚合物的形态有影响,并参考串并联模型,考虑聚合物结晶度和结晶尺寸等因素而得出。该模型在含多相导热粒子复合材料预测模型中具有较高的准确性,且预测较高掺杂量下复合材料的导热性能的准确性更高。由该模型得出复合材料导热系数的计算公式如式(1)所示。
lgλ=VC2lgλ2+(1-V)lg(C1λ1)
式(1)中:λ为复合材料的导热系数;λ1为聚合物的导热系数;λ2为导热粒子的导热系数;V为导热粒子填充体积;C1为聚合物结晶尺寸因子;C2为导热粒子形成的导热链自由因子,C2反映填充导热粒子在树脂基体中形成导热链的难易程度,取值范围为0~1,C2越接近1,导热粒子在基体中越容易形成导热链,复合材料的导热性提升效果越好。
为了简化计算,用体积分数计算式(1)中的V,根据质量分数与体积分数的关系进行恒等变换,如式(2)所示。
Vf=mfρfmfρf+mpρp=mfρpmpρf=ωρp(1-ω)ρf+ωρp
式(2)中:Vf为填料的体积分数;ω为填料的质量分数;mf为填料的质量;mp为PI基体的质量;ρp为PI的密度;ρf为填料的密度。
根据Y.Agari模型和质量分数与体积分数的恒等变换,得到基于Y.Agari模型的h-BN/PI复合材料导热系数随改性h-BN掺杂量的变化趋势,如图3中的曲线Ⅰ和Ⅱ所示。可以发现Y.Agari模型同样呈现h-BN/PI复合材料导热系数随改性h-BN掺杂量的增加而非线性增大的趋势。Y.Agari模型综合考虑了聚合物结晶度、结晶尺寸和导热粒子导热链的相互作用对复合材料导热系数的影响。结合本实验室之前大量的改性或未改性h-BN掺杂PI复合材料导热系数的数据,对这些数据进行了统计并根据Y.Agari模型计算了回归方程,发现改性h-BN掺杂量低于30%时,h-BN/PI复合材料的有效导热网络较少,此时聚合物结晶尺寸因子对复合材料导热系数的影响占主导作用,对拟合模型进行计算时得到图3中的曲线Ⅱ,此时聚合物结晶尺寸因子C1取值相对较大,为0.14,而起次要作用的导热粒子形成的导热链自由因子C2取值相对较小,为0.7。当改性h-BN掺杂量大于30%时,h-BN/PI复合材料的有效导热网络随着掺杂量的增加显著增多,此时导热粒子形成的导热链自由因子对复合材料导热系数的影响占主导作用,对拟合模型进行计算时得到图3中的曲线Ⅰ,此时C2取值为1,而起次要作用的聚合物结晶尺寸因子C1取值相对较小,为0.07。另外,由SEM分析结果亦可知,改性h-BN掺杂量为20%时,h-BN颗粒虽然经过表面湿润剂F068改性后可以均匀分散在PI基体内,但改性h-BN颗粒在PI基体内部搭接而形成的导热网络通道明显少于改性h-BN掺杂量为50%时所形成的导热网络通道。
图4为h-BN/PI复合材料力学性能与改性h-BN掺杂量的关系图。
通过分析图4数据可知,随着改性h-BN掺杂量的增加,h-BN/PI复合材料的拉伸强度和断裂伸长率明显下降。当掺杂量由10%增加至50%时,复合材料的拉伸强度由122.8 MPa下降至64.8 MPa,下降幅度达47%;断裂伸长率由39.6%下降至10.4%,下降幅度达74%。引起h-BN/PI复合材料力学性能下降的主要原因是:随着改性h-BN掺杂量的增加,一方面,无机物在PI基体中团聚易导致复合材料内部形成缺陷,使材料承载能力下降,当受到外部应力作用时,材料在缺陷处开裂;另一方面,改性h-BN不能完全分散均匀,会导致材料在受到外力作用时受力不均匀,进而导致复合材料拉伸强度下降。
图5为不同h-BN/PI复合材料的热重曲线。从图5可以看出,随着改性h-BN掺杂量的增加,h-BN/PI复合材料在850℃下的残留率和分解温度依次增大。当改性h-BN掺杂量由10%增加至50%时,复合材料的5%热分解温度(T5%)分别为552℃、558℃、570℃、581℃、595℃,10%热分解温度(T10%)分别为574℃、580℃、588℃、596℃、612℃。改性h-BN作为高耐热性的无机导热填料,与PI复合后很大程度上提升了h-BN/PI复合材料的耐热性能。究其原因,可能是经过表面湿润剂F068改性后的h-BN表面具有羟基基团,可以和PI基体中的醚键或酰亚胺键形成氢键,进而成为化学交联点,构成三维网状结构复合材料,最终提高了其分子链断裂能。
图6为不同h-BN/PI复合材料的电气强度。由图6可知,h-BN/PI复合材料的电气强度随着改性h-BN掺杂量的增加而呈现下降趋势。当掺杂量由10%增加至30%时,复合材料的电气强度从228.7 kV/mm下降至217.6 kV/mm,下降幅度约为4.9%;当掺杂量由30%增加至50%时,复合材料电气强度从217.6 kV/mm下降至198.6 kV/mm,下降幅度约为8.7%,表明掺杂量越高,电气强度下降幅度越大。这是因为当改性h-BN掺杂量相对较低时,填料会在复合材料中形成界面陷阱,对载流子起到捕获效应,这种机制能够有效地减少在材料内部自由移动的载流子数量,进而降低因载流子过度集中和高速碰撞所导致的聚合物链断裂或降解的风险,从而降低了复合材料热击穿概率。而改性h-BN掺杂量相对较高时,结合h-BN/PI复合材料的电镜图可以看出,改性h-BN存在一定的团聚现象,使得复合材料中改性h-BN与PI基体之间的界面产生缺陷,从而更容易发生电击穿。同时掺杂量越高,聚合物中形成的有机-无机界面越大,界面作用的影响更为显著,使得复合材料在电压作用下更易形成导电通道,因而更易被击穿。
(1)红外光谱测试结果表明,表面润湿分散剂F068成功实现对h-BN的改性;SEM结果表明,改性h-BN在PI基体中分散均匀无堆积现象。
(2)经过表面改性的h-BN颗粒,使得h-BN/PI复合材料的导热系数随填料掺杂量的增加而增大,当掺杂量为50%时,h-BN/PI复合材料的导热系数达0.83 W/(m·K)。
(3)通过Y.Agari模型测算的结果证明,h-BN/PI复合材料的导热系数在改性h-BN掺杂量相对较低时,聚合物结晶尺寸因子对复合材料导热系数的影响占主导作用;在改性h-BN掺杂量相对较高时,导热粒子形成的导热链自由因子对复合材料导热系数的影响占主导作用。
(4)h-BN/PI复合材料热稳定性随着改性h-BN掺杂量的增加而提高,改性h-BN掺杂量由10%增加至50%时,5%分解温度提升了43℃;但拉伸强度、断裂伸长率和电气强度随着改性h-BN掺杂量的增加呈现明显下降趋势。
  • 湖南省重点研发计划项目(2022GK2036)
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2025年第58卷第5期
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doi: 10.16790/j.cnki.1009-9239.im.2025.05.007
  • 接收时间:2024-08-13
  • 首发时间:2025-12-04
  • 出版时间:2025-05-20
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  • 收稿日期:2024-08-13
  • 修回日期:2024-11-05
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湖南省重点研发计划项目(2022GK2036)
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    株洲时代新材料科技股份有限公司,湖南 株洲 412007
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2种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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