Article(id=1198664998118584453, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1198664995669110898, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2023.02.002, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1655740800000, receivedDateStr=2022-06-21, revisedDate=1658332800000, revisedDateStr=2022-07-21, acceptedDate=null, acceptedDateStr=null, onlineDate=1763713605670, onlineDateStr=2025-11-21, pubDate=1676822400000, pubDateStr=2023-02-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1763713605670, onlineIssueDateStr=2025-11-21, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1763713605670, creator=13701087609, updateTime=1763713605670, updator=13701087609, issue=Issue{id=1198664995669110898, tenantId=1146029695717560320, journalId=1149653034449285133, year='2023', volume='56', issue='2', pageStart='1', pageEnd='117', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1763713605086, creator=13701087609, updateTime=1766563346770, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1210617678729966036, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1198664995669110898, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1210617678729966037, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1198664995669110898, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=11, endPage=18, ext={EN=ArticleExt(id=1198664998840004760, articleId=1198664998118584453, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Research progress on insulating property and thermal conductivity of fluorinated graphene and properties of its polyimide composites, columnId=1198664996516360309, journalTitle=Insulating Materials, columnName=Polyimide Film Special Issue, runingTitle=null, highlight=null, articleAbstract=

With the development of portable electronic devices, there is an increasing demand for thermal management materials with high thermal conductivity and electrical insulation. As a new thermal conductive filler with high conductivity and insulating property, fluorinated graphene (FG) has received extensive attention from the scientific community. In this paper, the preparation method of FG and the relationship between its structure and properties were summarized, the thermal conducting mechanism of FG was analyzed especially, and the latest research progress of FG as functional filler composite modified polyimide (PI) was systematically described. The problems and challenges were summarized and prospected.

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便携式电子设备的发展对于高导热和电绝缘的热管理材料需求越来越大,氟化石墨烯(FG)作为一种新兴的具有高热导率及电绝缘性的导热填料受到了科学界的广泛关注。本文总结了FG的制备方法、结构与性能关系等,特别对FG的导热机理进行了分析,同时系统阐述了FG作为功能填料复合改性聚酰亚胺(PI)的最新研究进展,并对存在的问题和挑战进行了总结和展望。

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王旭(1986-),男(汉族),山东济宁人,副研究员,主要从事耐热高分子及其复合材料的研究。
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王欣(1999-),女(汉族),山东滨州人,硕士生,主要从事聚酰亚胺导热薄膜材料的研究。

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氟化石墨烯绝缘导热性能及其聚酰亚胺复合材料性能研究进展
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王欣 , 刘谨洋 , 杜赞纯 , 刘向阳 , 王旭
绝缘材料 | 聚酰亚胺薄膜专题 2023,56(2): 11-18
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绝缘材料 | 聚酰亚胺薄膜专题 2023, 56(2): 11-18
氟化石墨烯绝缘导热性能及其聚酰亚胺复合材料性能研究进展
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王欣, 刘谨洋, 杜赞纯, 刘向阳, 王旭
作者信息
  • 四川大学 高分子科学与工程学院,四川 成都 610042
  • 王欣(1999-),女(汉族),山东滨州人,硕士生,主要从事聚酰亚胺导热薄膜材料的研究。

通讯作者:

王旭(1986-),男(汉族),山东济宁人,副研究员,主要从事耐热高分子及其复合材料的研究。
Research progress on insulating property and thermal conductivity of fluorinated graphene and properties of its polyimide composites
Xin WANG, Jinyang LIU, Zanchun DU, Xiangyang LIU, Xu WANG
Affiliations
  • College of Polymer Science and Engineering, Sichuan University, Chengdu 610042, China
出版时间: 2023-02-20 doi: 10.16790/j.cnki.1009-9239.im.2023.02.002
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便携式电子设备的发展对于高导热和电绝缘的热管理材料需求越来越大,氟化石墨烯(FG)作为一种新兴的具有高热导率及电绝缘性的导热填料受到了科学界的广泛关注。本文总结了FG的制备方法、结构与性能关系等,特别对FG的导热机理进行了分析,同时系统阐述了FG作为功能填料复合改性聚酰亚胺(PI)的最新研究进展,并对存在的问题和挑战进行了总结和展望。

氟化石墨烯  /  导热机理  /  复合材料  /  聚酰亚胺

With the development of portable electronic devices, there is an increasing demand for thermal management materials with high thermal conductivity and electrical insulation. As a new thermal conductive filler with high conductivity and insulating property, fluorinated graphene (FG) has received extensive attention from the scientific community. In this paper, the preparation method of FG and the relationship between its structure and properties were summarized, the thermal conducting mechanism of FG was analyzed especially, and the latest research progress of FG as functional filler composite modified polyimide (PI) was systematically described. The problems and challenges were summarized and prospected.

fluorinated graphene  /  thermal conducting mechanism  /  composite materials  /  polyimide
王欣, 刘谨洋, 杜赞纯, 刘向阳, 王旭. 氟化石墨烯绝缘导热性能及其聚酰亚胺复合材料性能研究进展. 绝缘材料, 2023 , 56 (2) : 11 -18 . DOI: 10.16790/j.cnki.1009-9239.im.2023.02.002
Xin WANG, Jinyang LIU, Zanchun DU, Xiangyang LIU, Xu WANG. Research progress on insulating property and thermal conductivity of fluorinated graphene and properties of its polyimide composites[J]. Insulating Materials, 2023 , 56 (2) : 11 -18 . DOI: 10.16790/j.cnki.1009-9239.im.2023.02.002
在过去的十几年里,便携式设备(智能手机、平板电脑及其他智能设备)的快速发展,对其内部电子原件的小型化、集成化和大功率致密化提出了更高的要求,单位面积热流的上升将严重影响设备的安全性、稳定性及使用寿命。这就要求材料同时具有高的热导率、绝缘性以及热稳定性。石墨烯作为最有前途的二维材料之一,具有极高的热导率(约为5 300 W/(m·K))和优异的机械柔韧性[1-2],在学术研究和商业应用中受到了广泛的关注,但由于其具有高的载流子迁移率、零带隙以至于高的导电性,限制了其在电子领域的应用。打开和调节石墨烯带隙最有效的方法就是化学官能化[3],氟化石墨烯(FG)作为石墨烯衍生物家族中的新兴成员,以优异的性能和潜在的应用而受到了广泛的关注。
氟化是调控石墨烯带隙的一个重要手段,氟的引入会使C-C键从sp2杂化转为sp3杂化,随着氟化程度的增加,石墨烯的导电性会出现从导体到半导体,最终成为绝缘体的转变。据预测,FG在室温下的带隙为3.5~7.4 eV[4-5],这一大带隙与其在室温下具有10 GΩ以上的高电阻是一致的[6]。然而,含氟石墨烯的面内热导率与导电性随氟化程度的变化有很大的不同。随着氟化程度的增加,FG的热导率呈U形变化,最终在氟的覆盖率达到100%时,FG的热导率可以达到石墨烯热导率的35%左右[7],也就是说全氟石墨烯的热导率在1 800 W/(m·K)以上,而且同时具备良好的绝缘性和2D柔韧性。这为目前电子器件小型化而容易集热的问题提供了潜在可行的解决办法。因此,研究FG的导热性能具有重要意义。
聚酰亚胺(PI)薄膜具有突出的耐热性能、绝缘性能、化学稳定性以及优异的力学性能,是电子、微电子、航空、航天、新能源等领域最为重要的聚合物绝缘材料之一[8-9]。由于电子设备向着小型化和高运行速度的方向发展,电子设备的功率增加,工作时单位体积产生的热量急剧增加,导致信号延迟、串扰和能量消耗,严重影响器件的稳定性和使用寿命,尤其是5G高频通信、新一代大规模集成电路等涉及多层绝缘和导热的应用场景,PI薄膜材料面临更高的热管理要求[10]。实现快速高效散热的同时保持绝缘性能已成为一项重要的技术挑战。传统PI薄膜材料具有较低的本征热导率(<0.2 W/(m·K)),严重限制了其在更多新领域的应用[11]。为此,国内外研究人员对提高PI的导热性能进行了大量研究,而通过添加高导热填料制备PI导热复合薄膜是目前最有效的策略之一[12-13]。因此,FG作为一种绝缘导热的二维纳米材料,将其与PI复合可以有效调控PI薄膜的导热性能。此外,结合FG的其他物理化学特性,FG的加入还会对PI的力学性能、介电性能等带来显著的影响。
本文根据近年来报道的FG及其PI复合材料的主要研究进展,介绍FG的制备方法、结构与性能关系等,特别是对FG的导热机理进行较为深入的分析,同时总结FG作为功能填料复合改性PI的最新研究进展,具体包括FG的复合对PI导热性能、力学性能以及介电性能等方面的影响,并对该方向中存在的问题和挑战提出总结和展望。
氟化石墨烯(FG)是由氟原子与石墨烯中的碳原子通过化学键接而成的一种石墨烯衍生物。2010年R R NAIR等[14]和R ZBOŘIL等[15]分别通过对石墨烯的氟化和对氟化石墨(FGI)机械剥离的方法制得了FG。由于氟原子及其对应C-F键的特殊物理化学性质,FG相比石墨烯等其他二维材料不仅具有诸多独特的性质,而且还可以通过控制其微观结构(层结构、氟化尺寸以及表面化学性质)来调节各种性能,因而引起了人们广泛的关注。
制备FG的方法一般有两种——自上而下合成法和自下而上合成法[16]。自上而下合成法一般选择FGI作为原料,在热[17-18]、溶剂[19-20]或超声波[21-22]的作用下,使FG片层间的范德华力被破坏,从而获得单层或者几层的FG,此方法对于制备少层的氮化硼等二维材料也具有一定的普适性[23-24]。自下而上合成法是以石墨烯、氧化石墨烯(GO)和氧化还原石墨烯(RGO)为原料,以氟气[6,25]、二氟化氙[26-27]等有机/无机氟源[28-29]为氟试剂对其进行直接氟化。随着石墨烯材料的快速发展,产物结构更为可控的自下而上合成法展现出了更大的应用潜力。
在所有的原子中,氟原子的电负性(4.0)最强,它的引入极大地改变了原始石墨烯上的电子分布。具体来说,C-F键的引入破坏了石墨烯原有的2D共轭结构,将共轭的C-C键变为单一的C-C键,使得碳原子从sp2杂化转变为sp3杂化。R R NAIR等[14]通过TEM观察到FG的晶胞相比于石墨烯的晶胞略有膨胀,与氢化石墨烯(GA)的晶胞略有收缩是相反的[30]图1显示了石墨烯和FG中的晶格常数(d)的直方图,记录值的差异是由于瞬变电磁法在精确测量d时的精度有限。从图1可以看出,FG的单元格比石墨烯大约1%的晶胞,即d≈2.48 Å。这同样是由于碳原子从sp2杂化转变为sp3杂化,sp3杂化具有更大的原子间距离。
材料的化学键类型通常由两个成键原子之间的电负性决定。由于氟原子极高的电负性,随着氟含量的增加,C-F键发生从共价键到半离子键再到离子键转变,如图2所示。石墨烯的C-C键的氟化反应通常包含两个相互竞争的反应过程:①氟自由基与石墨烯反应生成共价C-F键,其中sp3杂化的C原子与F原子相连;②氟自由基与石墨烯反应生成半离子C-F键,其中sp2杂化的C原子与F原子相连。C-F键随着氟化条件(如氟化剂、温度和时间)的改变,当F、C原子数量比降低,就会出现从离子键到半离子键再到共价键转变[31]
氟的引入改变了碳骨架中电子的平均自由程,影响了电子的运输性质。虽然从有机化学角度而言,引入氢原子可以达到与引入氟原子类似的效果,但是C-F键比C-H键的能量更稳定,氟与碳的结合能和解离能都比氢与碳的高,因此FG是比GA更有实际应用价值的材料[14]。同时,氟原子的引入可以在很大程度上打开带隙,因此可以通过调节F与C的原子数量比进而调节FG的带隙,调控范围为0~3.8 eV。结合在石墨烯骨架上的氟原子可以增加层间距,限制片层的堆积,从而赋予了FG良好的分散性、优异的摩擦学性能以及极低的表面能。此外,氟原子的引入也在晶格中引入了缺陷,产生局部磁矩,从而使FG具有可调的磁性[32-34]。值得注意的一点是,FG是可以被控制还原的,F WITHERS等[35]通过电子束辐照的方式,使得绝缘FG的电阻率最终降低到石墨烯的电阻率。标准的电子束图案化工艺可以用来设计尺寸从几微米到几十纳米的导电和半导体结构,这也为基于石墨烯的透明和灵活的电子器件的制造开辟了新的途径。
FG的力学性能也是人们关注的热点之一,FGI含有许多氟化过程中引入的缺陷,造成其易碎的特点,如果FG的力学性能像FGI一样就会极大地限制其应用。R R NAIR等[14]利用原子力显微镜(AFM),采用带有周期性圆孔阵列的量子箔作支撑支架,AFM尖端被放置在FG膜的中心上方,向下移动压入FG膜,记录AFM悬臂的弯曲量作为其位移的函数,并根据悬臂的刚度计算出作用在薄膜上的力。最终通过对力-位移曲线的分析得出FG的杨氏模量约为0.3 TPa,即FG的刚性为石墨烯1/3。
除了以上的物理性质外,FG的化学性质也是近几年来被深入关注的一个方向。在经典有机化学中,一般认为C-F键具有很大的键能,因此是化学惰性的,但是由于2D碳材料中C-F键的特殊性质大幅提高了它的反应活性。2017年D D CHRONOPOULOS等[36]在一个简短的综述中介绍了FG的衍生化学反应。此后,人们深入研究了FG衍生反应的机理及应用[37-39],在FG表面探索了各种衍生反应,如亲核取代[33,40-41]、自由基接枝[42-43],以及一些经典的有机化学过程,如Friedel-Craft反应[37]、Suzuki-Miyaura反应[44]和Sonogashira C-C交叉偶联反应[45],这为石墨烯骨架的官能化及其复合材料的制备提供了新的思路。
在研究FG的导热性能前,应先弄清楚其导热机理,首先通过两种模拟方法——反应力场(ReaxFF)和非平衡分子动力学(NEMD)来探究FG的热波动行为及氟原子的分布和覆盖范围对FG导热行为的影响,然后分析F原子对FG声子散射行为的影响,最后介绍单层以及多层FG的导热性能。
反应力场(ReaxFF)势[46]用于描述固体中的键和分子间相互作用,是一种通用的依赖于键序的势,它使用两种关系来描述键的形成和解离,一是使用键序和键距之间的关系,二是使用键序与键能之间的关系。具体来说,键序的函数表述为多体相互作用(如价角和扭转相互作用),保证它们的能量贡献在键解离时可以平滑地消失;而对于计算分子间相互作用(库仑力和范德华力)时,可以通过屏蔽来避免近距离的相互作用。
S K SINGH等[47]采用ReaxFF对FG的热力学性质进行了大规模的原子模拟。并采用分子动力学模拟方法研究了FG、单层石墨烯(GE)、GA以及单层氮化硼(BN)的热波动行为和力学性能。研究结果表明,对于热波动行为,FG与GA的热波动行为明显弱于BN和石墨烯,完全覆盖氟原子的FG具有与GA相同的趋势,并不会产生长波纹或明显地起皱。这表明在热传递过程中,FG传递的频率更高,能量更强。与GA相比,部分覆盖氟原子的FG中则存在较长的波纹;对于力学性能,GF的弯曲刚度κ大于GE、GA与BN,并且FG的κ与温度无关。在这项研究中,通过ReaxFF预测的F2的解离能、C-F键的键长和解离能都能与密度泛函理论(DFT)的势能曲线计算结果密切吻合,但是对于F-C-C-F的扭转势能预测,却比DFT低约18 kcal/mol。
HUANG W等[7]采用非平衡分子动力学模拟(NEMD)研究了FG的导热行为,模拟在具有不同氟原子分布和覆盖度的锯齿形(ZZ)石墨烯和椅子形(AC)石墨烯基础上进行。研究结果表明,氟原子的引入降低了石墨烯的热导率,其减少量主要取决于氟原子的分布和覆盖范围。随着氟的覆盖率从0增加到100%,FG的热导率呈U形变化。首先,氟原子在碳骨架上的随机分布可以被认为是sp2晶格中的缺陷,造成了声子的散射,声子变得更加局域化,声子群速度降低,从而导致热导率降低。随后,氟的覆盖率逐渐升高并达到100%,FG则逐渐恢复规则的晶格结构。这使得杂质诱导的声子散射减小,声子局域化也减小,声子群速度增加,热导率升高。这种热导率U形的变化规律普遍适用于二元体系,热量通过晶格振动传输,并被晶格杂质所破坏。
HUANG W等[7]同时也研究了氟原子分布对FG热导率的影响,在相同氟覆盖率下,随机氟化比“区域氟化”造成更大的热导率下降,垂直于热通量方向的区域氟化比平行于热通量方向的区域氟化能造成更大的热导率下降。这是由于随机氟化相比区域氟化导致的声子局域化更强,因而随机氟化具有更小的声子群速度,热导率更低。此外,他们还研究了应变对石墨烯、FG热导率的影响,发现氟化使FG的热导率对应变的敏感度降低,但具体原因并未解释清楚。
H PEELAERS等[48]用第一性原理计算研究了GA和FG的声子散射和声子密度(DOS),这些信息可以用来解释二维材料的红外、拉曼和中子衍射谱等实验数据以及如热传导、电子-声子相互作用等物理性质。首先计算了GA和FG在能量上最有利的晶体构型——椅子构象的声子散射关系,研究发现FG与GA的声子谱图存在很大差异,FG声子谱图中没有出现明显分离的声子群。与GA的高频模式相比,FG的频率更低,这是因为F比H重。总体来讲,GA的声学模式主要是C原子的振动,而FG的声学模式主要是F原子的振动。
此外,M M KHATAMI等[49]采用第一性原理和Monte-Carlo计算确定GA和FG中电子和空穴的迁移率,根据电子-声子相互作用计算出声子散射率。在合理的截止波长(2.6 nm)下,FG的电子迁移率相比GA的更高。这是由于FG中的ZA声子散射速率更低,而GA在Γ点周围的ZA声子能量较低,存在较大的声子占据数,从而导致较高的散射速率。
M NARASAKI等[50]研究了氟化单层石墨烯(FSLG)的导热性能,其采用精密的T型方法和金热膜传感器测量了FSLG和GE的热导率。实验结果表明,FSLG的热导率(80 W/(m·K))远低于GE的热导率(2 000 W/(m·K)),FSLG中的氟原子和C原子的sp3杂化键对声子散射有很大的贡献。与纳米空穴缺陷的声子散射相比,氟原子的声子散射和C原子的sp3键对热导率的降低起主导作用。
M C VU等[51]制备出了现有报道中具有最高热导率的纯FG薄膜,其通过行星球磨在NMP中剥离FGI,再将大粒径(2 mm)和小粒径(0.2 mm)氧化锆球的混合物加入EGF(剥离的FGI)溶液中,然后通过真空辅助渗透法制备FG。通过控制FG分散体的体积,制备了不同厚度的EGF薄膜。基面无缺陷的FG薄膜和有序的层状微结构相结合,使薄膜具有超高的面内热导率和电绝缘性能。更重要的是,EGF的面内热导率随其厚度的变化在88~242 W/(m·K)范围内可调,厚度越小,热导率越高,厚度为10 μm时,热导率达到242 W/(m·K),此时的力学性能也最佳,拉伸强度为38.3 MPa、弹性模量为11.8 GPa、断裂伸长率为0.53%。这是因为薄膜厚度越小,在薄膜结构中形成空洞或气囊的机会就越少,不仅减少了声子的额外散射,而且减少了引起力学性能降低的缺陷。
当前将FG作为填料来改善PI绝缘导热性能的研究报道还较少。RUAN K等[52]利用聚乙二醇三甲基壬基醚对FG进行液晶修饰,实现了FG的有序排列。采用本征导热性较高的液晶聚酰亚胺(LC-PI)作为基体,液晶FG(LC-GeF)作为填料,制备出 LC-GeF/LC-PI复合薄膜。当填料质量分数为15%时,LC-GeF/LC-PI复合薄膜的面内热导率为4.21 W/(m·K),而面外垂直热导率为0.63 W/(m·K),比纯PI膜的面内热导率0.77 W/(m·K)和面外垂直热导率0.15 W/(m·K)分别提高446.8%和320.0%。此外,LC-GeF/LC-PI复合薄膜具有更优异的绝缘性能、力学性能和热性能。
通常在基体中添加二维填料都会由于其随机分散表现出无规排列[53-54],导致难以形成有效的导热路径,并不能明显改善材料的导热性[55-57],进行液晶修饰是在不影响填料固有热导率的情况下实现二维填料有序排列的有效策略之一[58-60]。当在二维填料的分散体中引入离子[61]、表面活性剂[62]或其他物质[63]时,填料与添加物质之间的作用力可以使二维填料有序排列并显示出溶致液晶特性[64-65]。液晶化处理后的复合薄膜具有更高的热导率和更高的绝缘性能、力学性能和热性能。
为探究FG对PI力学性能的影响,YE X等[66]将FG纳米片用作填料来构建FG/PI纳米复合薄膜,研究表明FG的加入可以显著影响PI基体的拉伸应力、断裂伸长率、热稳定性和储能模量。当FG的质量分数为0.5%时,FG/PI纳米复合材料的拉伸应力比PI提高30.4%,断裂伸长率出现最大值,相比PI增大了115.2%。并且当FG的质量分数高于0.5%时,FG/PI纳米复合材料的储能模量显著增加。由此可见,FG与PI的共混掺杂,不仅不会像一般的导热填料降低聚合物的力学性能[67-68],甚至还使复合薄膜的力学性能得到提高。
ZHANG F等[69]介绍了一种制备新型FG/PI纳米复合薄膜的有效方法,采用溶剂插层、超声和高速离心法对层状FG纳米片材进行剥离,然后将具有超高比表面积的层状FG通过氢键或范德华力连接到PAA上,从而实现了填料的均匀分散,研究了FG的加入对PI力学性能等的影响。由于FG的加入量有限,FG/PI薄膜的拉伸强度和杨氏模量与纯PI薄膜相当,这是因为FG的加入量很少,而且FG中的含氧基团很少,导致氢键较少。FG和PI基质之间的结合主要依靠范德华力,因此允许很少的应力从聚合物基质传递到填料。值得注意的是,PI-0.5%FG表现出最高的断裂伸长率(11.60%±1.84%),这是由于FG纳米片具有较大的比表面积以及FG和PI之间存在相互作用,抑制了相分离,减少了裂纹的产生,最终提高了断裂伸长率。
ZHANG F等[69]的研究结果与YE X等[66]的研究结果存在差异,这是因为他们所用的FG纳米片不同,将FG掺杂在PI中的方式也不同,但结果都表明FG的引入都不会降低复合薄膜的力学性能。
FG具有可调的F、C原子数量比和许多C-F键,其介电常数极低(约1.2),在可见区域具有良好的透明度,并且存在高度电负性基团,是最有前景的介电纳米填料之一[31]
WANG X等[70]制备出不同片材尺寸和氟碳比的FG,用于制备FG/PI复合材料,以探讨FG对复合材料介电性能的影响。研究结果表明,氟碳比、禁带宽度和FG的片层尺寸对复合材料的最终介电性能有重要影响。高氟碳比(趋近于1)的PI复合材料具有带隙宽、疏水性强、分散性好、热稳定性好等特点,即使在FG质量分数很低(1%)的情况下,其PI复合材料的介电常数也大幅降低,仅为2.1。这为改善材料的介电性能提供了一条新的途径,也为实现FG作为一种先进材料的应用提供了新的思路。
氟化聚酰亚胺(f-PI)具有介电常数低(k≤3)、透明性好(可见光透过率大于85%)、化学和热稳定性好(Tg≥250℃)等优点,被认为是一种潜在的候选介电材料[71]。优化FG和f-PI之间的分子相互作用,以提高两种材料的界面兼容性,是制备低介电常数、高强度和高透明度的均匀纳米复合材料的关键。YIN X等[72]制备出2,2′-二(三氟甲基)二氨基联苯(TFDB)接枝FG/f-PI复合膜,采用溶剂插层的方法剥离得到了t-FG,当t-FG质量分数为0.75%时, t-FG/f-PI复合膜具有低介电常数(2.09)、低介质损耗因数(0.001 9)、高拉伸强度(300.1 MPa)、低吸水率(0.1%)以及良好的热稳定性。其综合性能优异的原因在于TFDB通过氢键与FG相连。f-PI在 t-FG上的连接促进了界面相互作用,使t-FG在f-PI基质中具有良好的分散性。可见,在保证与基体PI良好的相互作用下,制备的t-FG/f-PI复合薄膜适用于透明柔性显示器。
FG在润滑方面也具有非凡的潜力,FG界面上F原子之间的排斥力引起的层间相互作用很小,因而可以当做填料用来改性聚合物的耐磨性[73]。HOU K等[74]的研究表明FG可以作为一种有效的润滑油添加剂来提高润滑油的耐磨性能。他们还研究了PI和FG/PI纳米复合涂层在干滑动、水润滑和油润滑条件下的摩擦学性能。实验结果表明,FG的加入能有效提高PI的耐磨性能,其中FG质量分数为0.5%时,FG/PI纳米复合涂层在3种条件下摩擦学性能均最好。
ZHOU S等[75]研究也表明FG的加入可以提高FG/PI纳米复合膜的耐磨性能。他们工作的独特之处在于FG的制备是以氯仿介导的剥离法进一步修饰FG,得到尺寸更加均匀的改性FG,然后将其均匀分散到PI基体中。他们研究了干滑动和海水润滑条件下复合膜的摩擦系数,结果表明,在两种摩擦条件下,添加少量FG均可使FG/PI纳米复合膜的摩擦系数略有降低。当FG质量分数为0.5%时,FG/PI纳米复合膜的干滑动磨损率和海水润滑磨损率比纯PI分别降低了51.2%和40.5%,获得了最佳的耐磨性。总之,HOU K等[74]与ZHOU S等[75]的研究结果都表明,FG的加入能显著提升PI的耐磨性能,并且当FG质量分数为0.5%时,FG/PI的耐磨性能最好。
对于纯FG来讲,只有氟原子在全覆盖的情况下才能达到最稳定的状态,此时晶格完整,热波动行为中没有长波纹及褶皱出现,是绝缘导热最理想的状态,这同时也展现出了FG在绝缘导热领域的广阔的应用前景。
然而,具有理想结构的FG仍难以制备,而且现有纯FG薄膜的拉伸强度最高只达到了38.3 MPa,远远满足不了许多领域的应用要求,另外FG与PI等聚合物制备的复合薄膜在垂直方向的热导率均处在一个较低的水平。因此,未来FG及其聚合物基复合材料的发展应主要聚焦在以下几个方向:
(1)全氟化FG的制备方法研究,即通过对制备方法调整与工艺优化得到最为接近理想晶格结构的FG材料。
(2)强化FG层与层之间的相互作用、FG与基体之间的相互作用,提高FG薄膜及其复合材料薄膜的垂直热导率。
(3)基于FG功能改性以及复合工艺优化,实现FG复合薄膜的结构设计多样性,提高其导热性的同时赋予其低介电、高透明等性能。
  • 国家自然科学基金资助项目(51803129)
  • 国家自然科学基金资助项目(52173008)
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2023年第56卷第2期
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doi: 10.16790/j.cnki.1009-9239.im.2023.02.002
  • 接收时间:2022-06-21
  • 首发时间:2025-11-21
  • 出版时间:2023-02-20
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  • 收稿日期:2022-06-21
  • 修回日期:2022-07-21
基金
国家自然科学基金资助项目(51803129)
国家自然科学基金资助项目(52173008)
作者信息
    四川大学 高分子科学与工程学院,四川 成都 610042

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王旭(1986-),男(汉族),山东济宁人,副研究员,主要从事耐热高分子及其复合材料的研究。
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https://castjournals.cast.org.cn/joweb/jycl/CN/10.16790/j.cnki.1009-9239.im.2023.02.002
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2种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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