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Article(id=1235576339877655250, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235576335565902637, articleNumber=null, orderNo=null, doi=10.16790/j.cnki.1009-9239.im.2021.06.005, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1607270400000, receivedDateStr=2020-12-07, revisedDate=1614787200000, revisedDateStr=2021-03-04, acceptedDate=null, acceptedDateStr=null, onlineDate=1772513955325, onlineDateStr=2026-03-03, pubDate=1624118400000, pubDateStr=2021-06-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1772513955325, onlineIssueDateStr=2026-03-03, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1772513955325, creator=13701087609, updateTime=1772513955325, updator=13701087609, issue=Issue{id=1235576335565902637, tenantId=1146029695717560320, journalId=1149653034449285133, year='2021', volume='54', issue='6', pageStart='1', pageEnd='124', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1772513954297, creator=13701087609, updateTime=1773989561930, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1241765482630546068, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235576335565902637, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1241765482634740373, tenantId=1146029695717560320, journalId=1149653034449285133, issueId=1235576335565902637, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=32, endPage=37, ext={EN=ArticleExt(id=1235576340238365407, articleId=1235576339877655250, tenantId=1146029695717560320, journalId=1149653034449285133, language=EN, title=Dielectric and Thermal Conductive Properties of P(VDF-HFP)-BNNS Nanocomposite with Sandwich Structure, columnId=1222482827711603484, journalTitle=Insulating Materials, columnName=Special Issue on Thermal Conductive Insulating, runingTitle=null, highlight=null, articleAbstract=

In order to improve the dielectric properties, insulating properties, and thermal conductivity of polymer composites comprehensively, on the basis of boron nitride nanoplates (BNNS) modified polyvinylidene fluoride hexafluoropropylene(P(VDF-HFP)), we prepared a three-layer (P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)) composite by layer by layer solution casting method, the bottom and top layer were the P(VDF-HFP) film, and the middle layer was the modified P(VDF-HFP) film with 0, 1%, 3%, 5% volume fraction of BNNS, respectively. The properties of the composites were analyzed. The results show that compared with the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, the dielectric properties of the three-layer polymer material modified with 1% BNNS is improved obviously, its dielectric constant and dielectric loss factor is 8.52 and 0.022 at 1 000 Hz, respectively. Its electrical breakdown property and thermal conductivity are more excellent, the electric strength is 452.6 MV/m, which is 17.3% and 24.9% higher than that of the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, respectively, and its thermal diffusion rate is 0.04 mm2/s, which is 25% and 5.3% higher than that of the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, respectively.

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为了综合提升聚合物复合材料的介电、绝缘和导热性能，基于氮化硼纳米片（BNNS）改性聚偏二氟乙烯-六氟丙烯（P(VDF-FHFP)），利用逐层溶液浇注法制备了三层结构的P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)复合材料，其中上、下层为P(VDF-HFP)薄膜，中间层分别为体积分数为0、1%、3%、5%氮化硼纳米片（BNNS）改性的P(VDF-HFP)-BNNS薄膜，并对复合材料的性能进行分析。结果表明：添加1% BNNS改性的三层聚合物复合材料介电性能较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜均有明显提升，在1 000 Hz时其介电常数为8.52，介质损耗因数为0.022，并且具有更优异的电击穿性能和导热性能；其电气强度为452.6 MV/m，较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜分别提升了17.3%、24.9%；其热扩散率为0.04 mm2/s，较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜分别提升了25%、5.3%。

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赵学童（1984-），男（汉族），河南周口人，副教授，研究方向为电介质物理及其应用、功能陶瓷电介质制备与应用、绝缘材料制备和绝缘技术应用。
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郑文悦（1997-），女（汉族），福建福州人，硕士生，研究方向为储能、导热电介质材料。

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郑文悦（1997-），女（汉族），福建福州人，硕士生，研究方向为储能、导热电介质材料。

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郑文悦（1997-），女（汉族），福建福州人，硕士生，研究方向为储能、导热电介质材料。

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样品Eb/(MV/m)形状因子β较纯样电气强度增量
P(VDF-HFP)纯样381.420.6—
1%-三层复合材料452.616.417.3%
3%-三层复合材料426.417.36.9%
5%-三层复合材料419.023.55.0%
1%-单层复合材料361.85.0—
3%-单层复合材料336.65.8—
5%-单层复合材料369.819.2—
), ArticleFig(id=1235576349633605738, tenantId=1146029695717560320, journalId=1149653034449285133, articleId=1235576339877655250, language=CN, label=表1, caption=

单层及三层结果复合材料的电气强度及形状因子

, figureFileSmall=null, figureFileBig=null, tableContent=
样品Eb/(MV/m)形状因子β较纯样电气强度增量
P(VDF-HFP)纯样381.420.6—
1%-三层复合材料452.616.417.3%
3%-三层复合材料426.417.36.9%
5%-三层复合材料419.023.55.0%
1%-单层复合材料361.85.0—
3%-单层复合材料336.65.8—
5%-单层复合材料369.819.2—
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三层结构P(VDF-HFP)-BNNS复合材料的介电与导热性能
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郑文悦 , 任路路 , 王璨 , 赵学童 , 杨丽君 , 廖瑞金
绝缘材料 | 导热绝缘专题 2021,54(6): 32-37
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绝缘材料 | 导热绝缘专题 2021, 54(6): 32-37
三层结构P(VDF-HFP)-BNNS复合材料的介电与导热性能
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郑文悦, 任路路, 王璨, 赵学童, 杨丽君, 廖瑞金
作者信息
  • 重庆大学 输配电装备及系统安全与新技术国家重点实验，重庆 400044

    • 郑文悦（1997-），女（汉族），福建福州人，硕士生，研究方向为储能、导热电介质材料。

通讯作者:

赵学童（1984-），男（汉族），河南周口人，副教授，研究方向为电介质物理及其应用、功能陶瓷电介质制备与应用、绝缘材料制备和绝缘技术应用。
Dielectric and Thermal Conductive Properties of P(VDF-HFP)-BNNS Nanocomposite with Sandwich Structure
Wenyue ZHENG, Lulu REN, Can WANG, Xuetong ZHAO, Lijun YANG, Ruijin LIAO
Affiliations
  • State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China
出版时间: 2021-06-20 doi: 10.16790/j.cnki.1009-9239.im.2021.06.005
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摘要
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为了综合提升聚合物复合材料的介电、绝缘和导热性能，基于氮化硼纳米片（BNNS）改性聚偏二氟乙烯-六氟丙烯（P(VDF-FHFP)），利用逐层溶液浇注法制备了三层结构的P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)复合材料，其中上、下层为P(VDF-HFP)薄膜，中间层分别为体积分数为0、1%、3%、5%氮化硼纳米片（BNNS）改性的P(VDF-HFP)-BNNS薄膜，并对复合材料的性能进行分析。结果表明：添加1% BNNS改性的三层聚合物复合材料介电性能较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜均有明显提升，在1 000 Hz时其介电常数为8.52，介质损耗因数为0.022，并且具有更优异的电击穿性能和导热性能；其电气强度为452.6 MV/m，较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜分别提升了17.3%、24.9%；其热扩散率为0.04 mm2/s，较纯P(VDF-HFP)试样和添加1% BNNS改性的单层复合薄膜分别提升了25%、5.3%。

聚偏二氟乙烯-六氟丙烯  /  氮化硼纳米片  /  介电性能  /  电气强度  /  导热

In order to improve the dielectric properties, insulating properties, and thermal conductivity of polymer composites comprehensively, on the basis of boron nitride nanoplates (BNNS) modified polyvinylidene fluoride hexafluoropropylene(P(VDF-HFP)), we prepared a three-layer (P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)) composite by layer by layer solution casting method, the bottom and top layer were the P(VDF-HFP) film, and the middle layer was the modified P(VDF-HFP) film with 0, 1%, 3%, 5% volume fraction of BNNS, respectively. The properties of the composites were analyzed. The results show that compared with the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, the dielectric properties of the three-layer polymer material modified with 1% BNNS is improved obviously, its dielectric constant and dielectric loss factor is 8.52 and 0.022 at 1 000 Hz, respectively. Its electrical breakdown property and thermal conductivity are more excellent, the electric strength is 452.6 MV/m, which is 17.3% and 24.9% higher than that of the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, respectively, and its thermal diffusion rate is 0.04 mm2/s, which is 25% and 5.3% higher than that of the pure P(VDF-HFP) and the single layer composite films modified with 1% BNNS, respectively.

polyvinylidene fluoride hexafluoropropylene  /  boron nitride nanosheet  /  dielectric properties  /  electric strength  /  thermal conduction
郑文悦, 任路路, 王璨, 赵学童, 杨丽君, 廖瑞金. 三层结构P(VDF-HFP)-BNNS复合材料的介电与导热性能. 绝缘材料, 2021 , 54 (6) : 32 -37 . DOI: 10.16790/j.cnki.1009-9239.im.2021.06.005
Wenyue ZHENG, Lulu REN, Can WANG, Xuetong ZHAO, Lijun YANG, Ruijin LIAO. Dielectric and Thermal Conductive Properties of P(VDF-HFP)-BNNS Nanocomposite with Sandwich Structure[J]. Insulating Materials, 2021 , 54 (6) : 32 -37 . DOI: 10.16790/j.cnki.1009-9239.im.2021.06.005
正文
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0 引言
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导热绝缘材料因其在集成电子系统、LED产业、汽车工业、军用武器及航空航天等领域的重要应用，一直受到国内外学者的广泛关注[1-3]。随着我国电力电子系统的持续飞速发展，对电工材料的体积、功率密度、导热系数、击穿特性等方面提出了更高的要求。
聚偏二氟乙烯-六氟丙烯（P(VDF-HFP)）是聚偏二氟乙烯的共聚物，具有高介电常数、高能量密度等特点，是电气领域常用的聚合物材料[4]。P(VDF-HFP)薄膜材料具有柔性高、易制备、成本低等优势，在导热绝缘材料领域有巨大的应用潜力和前景。但P(VDF-HFP)电气强度低，在高场下迟滞损耗高[5]，可以通过添加无机填料改性以解决其介电、绝缘、导热性能之间的矛盾。近年来，氮化硼（BN）因其热导率高而在众多纳米填料中脱颖而出，一定量的纳米氮化硼能在聚合物基体中形成特殊的坚固架构，提高电气强度[6]。然而，氮化硼的介电常数只有3～4，使得添加氮化硼纳米片的单层P(VDF-HFP)材料（P(VDF-HFP)-BNNS）介电常数通常较低，储能性能受到影响，材料的综合应用受到限制，在绝缘性能方面的提升效果也十分有限。三层结构的复合材料由于其界面效应可提升材料总体的介电常数，绝缘层能够承受更高的场强并抑制电树的贯通，从而提高材料的电气强度。
本研究基于氮化硼纳米片（BNNS）改性P(VDF-HFP)，通过逐层溶液浇注法制备不同掺杂量的P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)三层结构复合材料。利用氮化硼的高导热性提升材料的热扩散率，利用三层结构的界面作用提升材料的介电常数，结合氮化硼填料和三层结构提升材料的电气强度。
1 实 验
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1.1 主要原材料和仪器设备
氮化硼纳米片（纯度为99%，厚度为50～400 nm），江苏先丰纳米材料科技有限公司；聚偏氟乙烯-六氟丙烯（P(VDF-HFP)）（六氟丙烯质量分数为10%）、N,N-二甲基甲酰胺（DMF），Sigma-Aldrich公司。
Quattro S型扫描电子显微镜，美国Thermo Fisher Scientific公司；Concept 80型宽频介电谱仪， 德国Novocontrol公司；PK-CPE2020型高压铁电测试工作站，美国Polyk公司；LFA457型激光导热仪，德国Netzsch公司。
1.2 单层结构复合材料制备
将140 mg P(VDF-HFP)加入6 mL DMF溶液中，磁力搅拌至溶质完全溶解，得到P(VDF-HFP)/DMF溶液；将一定量BNNS加入DMF溶液中，超声分散1 h，形成BNNS均匀分散液；随后将均匀分散液分别按体积分数1%、3%、5%添加到一定量的 P(VDF-HFP)/DMF溶液中，再分别超声振荡5 min，得到P(VDF-HFP)-BNNS分散液。在每片洁净的玻璃片上均匀滴加3 mL上述溶液，然后在45℃烘箱中干燥12 h以蒸发液体，待自然冷却后取出，置于水中将薄膜从玻璃片上剥离。为确保液体完全蒸发，将其放入80℃真空干燥箱中真空干燥12 h，得到单层P(VDF-HFP)-BNNS复合薄膜。为便于描述，根据BNNS体积分数将单层复合薄膜分别命名为1%-单层复合薄膜、3%-单层复合薄膜、5%-单层复合薄膜。
1.3 三层结构复合材料制备
使用逐层溶液浇注法（layer by layer solution casting）制备三层结构的复合薄膜材料。将300 mg P(VDF-HFP)加入一定量的DMF溶液中，得到制备下层和上层聚合物薄膜的P(VDF-HFP)/DMF溶液。取3 mL P(VDF-HFP)/DMF溶液均匀滴在一片洁净玻璃片上，于70℃真空烘箱中干燥6 h以蒸发液体。待下层P(VDF-HFP)完全干燥后按制备单层复合薄膜材料的方法分别滴上不同BNNS体积分数的 P(VDF-HFP)-BNNS分散液作为中间层，在70℃干燥6 h。然后再按制备下层的方法滴加上层P(VDF-HFP)溶液，于70℃真空干燥6 h。最后将三层结构复合薄膜剥离，并在70℃真空烘箱中干燥12 h，得到P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)三层结构复合材料。为便于描述，根据BNNS体积分数将三层复合材料分别命名为1%-三层复合材料、3%-三层复合材料、5%-三层复合材料。
1.4 测试与表征
使用扫描电子显微镜观察试样在液氮中脆断后的断面形貌，试样断面作喷金处理；采用宽频介电谱仪测试材料的介电常数、介质损耗，试样表面作喷金处理，厚度为30 nm，测试频率为102～105 Hz；使用高压铁电测试工作站测试材料的电气强度；采用激光导热仪测试材料的热扩散系数。
2 结果与讨论
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2.1 复合材料的微观形貌
图1为不同BNNS体积分数三层复合材料断面的SEM图，图中圆圈标注为部分随机分布的BNNS。由图1可知，P(VDF-HFP)/P(VDF-HFP)-BNNS/P(VDF-HFP)三层复合材料整体的厚度为15～20 μm，材料的上、下层薄膜中基本没有纳米片分布，纳米片主要存在于复合材料的中间部分，朝面内或面外方向随机分布。但在BNNS含量为3%、5%的试样中可见有少量微观缺陷，如细小的微孔等。
2.2 复合材料的介电性能
图2(a)、(b)分别为单层、三层结构复合材料在102～105 Hz下的介电性能，图2(c)为1 000 Hz下单层、三层复合材料的介电性能。从图2(a)可以看出，与纯P(VDF-HFP)薄膜相比，添加1% BNNS的单层复合薄膜介电常数略微下降，这是因为BNNS为弱极性介质，其介电常数（3～4）小于P(VDF-HFP)基体的介电常数（8～10），少量的添加可阻碍基体中极性基团的转向极化。但继续增大BNNS的体积分数到3%和5%时，复合薄膜的介电常数又呈上升趋势，介电常数分别提高到8.28和8.29。这是由于填料与基体间的界面增多，界面极化增强，从而提高了介电常数。但是，受BNNS本征介电特性的影响，单层复合薄膜的介电常数较纯样并未明显提高。从图2(b)可以看出，与对应BNNS含量的单层复合薄膜相比，三层复合材料的介电常数明显提升。添加1% BNNS后三层复合材料的介电常数有一定的提高，这是因为层间界面会产生界面极化，从而影响复合材料的介电性能[7-8]。当填料的体积分数增大到3%时，材料的介电常数进一步提高，从图2(c)可以看出，1 000 Hz下3%-三层复合材料的介电常数为8.88，较P(VDF-HFP)纯样的8.33提升了6.6%，较3%单层复合薄膜提升了7.2%。三层结构复合材料中影响介电性能的界面可分为两种：①层间界面，上层与中间层、中间层与下层之间的界面；②填料和基体间的界面。添加3% BNNS时，填料和基体间的界面增多，各界面间存在界面极化[9]，导致介电常数明显提升。添加5% BNNS时，三层复合材料的介电常数开始下降，这可能是由于随着BNNS含量的增加，三层结构复合材料内低介电常数的组分增加[10]。BNNS占整体复合材料的体积分数可由式（1）计算。
P=vBNNSvPVDF+vBNNS
式（1）中：vBNNS为BNNS占整片薄膜的体积比；vPVDF为基体占整片薄膜的体积比。当中间层含1% BNNS时，低介电常数的BNNS填料在复合膜中的体积分数仅为0.334%，而中间层添加5% BNNS时，BNNS填料在复合膜中的体积分数达到1.69%，填料本身的低介电特性开始显著影响复合材料的介电常数。
由图2(c)还可知，三层复合材料的介质损耗因数较小，均保持在0.03以下。但与相同BNNS含量的单层复合薄膜相比，三层复合材料在1 000 Hz下的介质损耗因数略大，这主要是由于三层结构界面极化的影响。添加1% BNNS的三层复合材料有最小的介质损耗因数，且介质损耗因数随BNNS含量的增加呈增大趋势。这可能是因为高含量BNNS在提高复合材料介电常数的同时，也会产生更多的微观缺陷，电荷容易通过这些微孔、缺陷注入电介质中，从而导致其介质损耗因数增大[11-12]。
从介电性能综合来看，三层复合材料的介电常数高于P(VDF-HFP)纯样和单层复合材料，在介电谱的低频区域，其介质损耗较纯样降低，说明添加BNNS的三层复合材料能有效抑制空间电荷和泄漏电流的传导[6,13]。
2.3 复合材料的电气强度
电气强度是表征材料绝缘性能的一个重要指标，一般通过双参数威布尔分布公式进行计算，如式（2）所示。
PE=1-exp (-(E/Eb)β)
式（2）中：PE为电介质失效的累积概率；E为实验所得电气强度；Eb为失效概率为63%时的计算电气强度；β为形状因子。对式（2）两边取对数并作图，得到单层、三层结构复合材料电气强度的威布尔分布如图3所示，其形状因子（β）及电气强度（Eb）归纳如表1所示。
从表1可以看出，不同BNNS含量三层结构复合材料的形状因子均在16以上，说明击穿数据的分散性小，结果相对集中、可靠。根据图3和表1可知，三层复合材料的电气强度均比P(VDF-HFP)纯样及对应BNNS含量的单层复合薄膜高，其中BNNS含量为1%时，三层复合材料的电气强度最高，达到452.6 MV/m，较P(VDF-HFP)纯样的381.4 MV/m提高了17.3%，较单层复合薄膜的361.8 MV/m提高了25.1%，这与其低介质损耗的结果对应。对于“0-x-0”型三层复合材料，有如式（3）～（4）的分层场强计算公式[14-15]。
EOUT=V2dOUT+dMIDε'OUTε'MID
EMID=V2dMID+dOUTε'MIDε'OUT
式（3）～（4）中：V为施加于整片三层复合材料的电压；EOUT和EMID分别为上、下层和中间层的分场强；dOUT和dMID分别为上、下层和中间层的厚度，由于每层基体的质量基本相同，在此认为外层和中间层厚度相同；ε'OUT和ε'MID分别为上、下层(P(VDF-HFP)纯样)和中间层（含BNNS的单层复合材料）的实测介电常数。根据图2(b)可知，添加1% BNNS的单层薄膜材料的介电常数为8.24，略小于P(VDF-HFP)纯样的8.33，所以理论上EOUT＜EMID，即中间层会分得更大的场强。又根据图3(b)可知，添加1% BNNS的三层复合薄膜材料所能耐受的电场强度比纯样高，说明三层结构的分压功能可有效规避聚合物因纳米掺杂导致绝缘性能下降这一劣势。这可能是由于三层结构的界面更有利于捕获自由电荷，阻止其在层间移动并形成导电通道，进而使整片三层结构复合材料的电气强度得到提升。当BNNS的体积分数达到3%、5%时，过多的非极性填料BNNS和极性基体之间较差的界面相互作用会导致材料中的微小缺陷增多，微观缺陷处容易发生局部击穿，导致材料整体的电气强度降低[16-18]。
综上可知，添加BNNS的三层结构复合材料可使P(VDF-HFP)的综合电气性能得到有效提升。
2.4 复合材料的导热性能
导热系数是薄膜复合材料的另一重要性能指标，导热系数的计算公式如式（5）所示。
K=αCpρ
式（5）中：α为材料的热扩散率，可根据试样的厚度、测试温度升至最大值的50%时所需时间计算得到；Cp为材料的比热容；ρ为材料的密度。对于填料含量较少的复合材料，比热容和密度变化较小，而热扩散率具有一定的可比性[19]。
图4为不同BNNS体积分数单层和三层复合材料的热扩散率。由图4可知，当BNNS的体积分数为3%时，三层复合材料的热扩散率为0.041 mm2/s，相比纯样的0.032 mm2/s增大了28.1%。说明添加一定量的BNNS能在基体的厚度方向上形成热输送路径，加快热量在厚度方向的扩散，提高热扩散率[20]。但对于逐层溶液浇注法制得的样品，BNNS在基体内呈随机分布状态，随着填料含量的增加，其分散性也会逐渐下降，导热通道的构成可能受到一定阻碍[21-23]。因此当填料的体积分数增大到5%时，材料的导热性能有所降低。由图4还可知，在相同BNNS含量下，与单层结构复合薄膜相比，三层结构复合材料具有更大的热扩散率，由此可见，通过制备多层结构复合薄膜能构建多层热传导通路，进一步提高材料的导热性能[24]。
3 结论
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（1）当BNNS的体积分数为1%时，三层结构复合材料同时具有高介电常数、低介质损耗等特点，提高了P(VDF-HFP)的介电、绝缘性能。
（2）三层结构复合材料的电气强度随BNNS含量的增加呈先升高后降低的趋势，三层复合材料的电气强度均比P(VDF-HFP)纯样及对应BNNS含量的单层复合薄膜高，其中添加1% BNNS的三层复合材料电气强度最高，达到452.6 MV/m。
（3）三层结构复合材料的热扩散率随BNNS含量的增加先增大后减小。当BNNS的体积分数为3%时，三层结构复合材料的热扩散率最大，达到0.041 mm2/s，相比P(VDF-HFP)纯样的0.032 mm2/s提高了28.1%。
综上所述，中间层添加1% BNNS的三层结构复合材料兼具高介电常数、低介质损耗、高电气强度和高导热性能等优势，对P(VDF-HFP)的改性效果最好。
基金
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  • 国家自然科学基金资助项目(51877016)
  • 重庆市自然科学基金(cstc2019jcyj-xfkxX0008)
  • 霍英东教育基金(171050)
文献
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参考文献 引证文献
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2021年第54卷第6期
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doi: 10.16790/j.cnki.1009-9239.im.2021.06.005
  • 接收时间：2020-12-07
  • 首发时间：2026-03-03
  • 出版时间：2021-06-20
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  • 收稿日期：2020-12-07
  • 修回日期：2021-03-04
基金
国家自然科学基金资助项目(51877016)
重庆市自然科学基金(cstc2019jcyj-xfkxX0008)
霍英东教育基金(171050)
作者信息
    重庆大学 输配电装备及系统安全与新技术国家重点实验，重庆 400044

通讯作者:

赵学童（1984-），男（汉族），河南周口人，副教授，研究方向为电介质物理及其应用、功能陶瓷电介质制备与应用、绝缘材料制备和绝缘技术应用。
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2种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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