Article(id=1323703508196798988, tenantId=1146029695717560320, journalId=1255847867265597444, issueId=1323703473736397109, articleNumber=null, orderNo=null, doi=null, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1099929600000, receivedDateStr=2004-11-09, revisedDate=1111075200000, revisedDateStr=2005-03-18, acceptedDate=null, acceptedDateStr=null, onlineDate=1793525109575, onlineDateStr=2026-11-01, pubDate=1141488000000, pubDateStr=2006-03-05, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793525109575, onlineIssueDateStr=2026-11-01, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793525109575, creator=13701087609, updateTime=1793525109575, updator=13701087609, issue=Issue{id=1323703473736397109, tenantId=1146029695717560320, journalId=1255847867265597444, year='2006', volume='20', issue='1', pageStart='1', pageEnd='112', issueExtLink='null', onlineDate='null', pubDate='1141488000000', pubDateStr='2006-03-05', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793525101360, creator='13701087609', updateTime=1793525101360, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=56, endPage=60, ext={EN=ArticleExt(id=1323703509845160461, articleId=1323703508196798988, tenantId=1146029695717560320, journalId=1255847867265597444, language=EN, title=Study of Optical Properties and Electronic Structure of V in ZnS by First Principles, columnId=null, journalTitle=Chinese Journal of High Pressure Physics, columnName=null, runingTitle=null, highlight=null, articleAbstract=

The optical properties and electrical structure of V in ZnS supercell have been computed by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA). The calculated optical property is in consist with the values calculated by the theory of crystal field and with the experiment results. By importing impurity, the energy level has a shift about -2.5 eV. The Mulliken charge of V is 0.28, which is smaller than every kind of Zn, and the covalency of bond S—V is strongest than other bonds, and the length is the shortest.

, authors=Kai-Hua HE1, 2, Fei YU2, 3, Guang-Fu JI2, Qi-Li YAN3, Shu-Kui ZHENG4, authorsList=Kai-Hua HE, Fei YU, Guang-Fu JI, Qi-Li YAN, Shu-Kui ZHENG, authorCompany=null, correspAuthors=Guang-Fu JI, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1323703510059069966, articleId=1323703508196798988, tenantId=1146029695717560320, journalId=1255847867265597444, language=CN, title=第一性原理研究ZnS掺V的光学性质和电子结构, columnId=0, journalTitle=高压物理学报, columnName=, runingTitle=null, highlight=null, articleAbstract=

运用密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA),对替代式掺杂钒(V)的闪锌矿(ZnS)的超晶胞电子结构进行了计算。研究了ZnS掺杂的光学性质及其电子结构,通过分析发现,光吸收的计算结果与运用配位场理论得到的计算结果以及实验数据符合较好;同时还对引入杂质前后电子结构的异同以及价键的一些性质进行了对比分析:因为杂质V的引入,态密度出现了几个新的峰,并且本体能带向低能方向偏移了大约2.5 eV,V所带正电荷为0.28,比任何一类Zn原子都要小,S—V键的共价性最强、键长最短。

, authors=何开华1, 2, 余飞2, 3, 姬广富2, 颜其礼3, 郑澍奎4, authorsList=何开华, 余飞, 姬广富, 颜其礼, 郑澍奎, authorCompany=null, correspAuthors=姬广富, authorNote=

何开华(1978—),男,硕士研究生. E-mail:

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姬广富,男,博士,副研究员. E-mail:
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第一性原理研究ZnS掺V的光学性质和电子结构
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何开华 1, 2 , 余飞 2, 3 , 姬广富 2 , 颜其礼 3 , 郑澍奎 4
高压物理学报 | 2006,20(1): 56-60
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高压物理学报 | 2006 , 20 (1) : 56 -60
第一性原理研究ZnS掺V的光学性质和电子结构
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何开华1, 2 , 余飞2, 3, 姬广富2 , 颜其礼3, 郑澍奎4
作者信息
  • 1.中国地质大学数学与物理学院,湖北 武汉 430074
  • 2.中国工程物理研究院流体物理研究所,四川 绵阳 621900
  • 3.四川师范大学固体物理研究所,四川 成都 610066
  • 4.西华大学建筑与土木工程系,四川 成都 610039
通讯作者:
姬广富,男,博士,副研究员. E-mail:
作者简介:

何开华(1978—),男,硕士研究生. E-mail:

Study of Optical Properties and Electronic Structure of V in ZnS by First Principles
Kai-Hua HE1, 2 , Fei YU2, 3, Guang-Fu JI2 , Qi-Li YAN3, Shu-Kui ZHENG4
Affiliations
  • 1.College of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
  • 2.Institute of Fluid Physics CAEP, Mianyang 621900, China
  • 3.Institute of Solid States, Sichuan Normal University, Chengdu 610066, China
  • 4.Department of Architecture, Xihua University, Chengdu 610039, China
出版时间: 2006-03-05
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运用密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA),对替代式掺杂钒(V)的闪锌矿(ZnS)的超晶胞电子结构进行了计算。研究了ZnS掺杂的光学性质及其电子结构,通过分析发现,光吸收的计算结果与运用配位场理论得到的计算结果以及实验数据符合较好;同时还对引入杂质前后电子结构的异同以及价键的一些性质进行了对比分析:因为杂质V的引入,态密度出现了几个新的峰,并且本体能带向低能方向偏移了大约2.5 eV,V所带正电荷为0.28,比任何一类Zn原子都要小,S—V键的共价性最强、键长最短。

超晶胞  /  杂质  /  光学性质

The optical properties and electrical structure of V in ZnS supercell have been computed by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA). The calculated optical property is in consist with the values calculated by the theory of crystal field and with the experiment results. By importing impurity, the energy level has a shift about -2.5 eV. The Mulliken charge of V is 0.28, which is smaller than every kind of Zn, and the covalency of bond S—V is strongest than other bonds, and the length is the shortest.

supercell  /  impurity  /  optical property
何开华, 余飞, 姬广富, 颜其礼, 郑澍奎. 第一性原理研究ZnS掺V的光学性质和电子结构. 高压物理学报, 2006 , 20 (1) : 56 -60 .
Kai-Hua HE, Fei YU, Guang-Fu JI, Qi-Li YAN, Shu-Kui ZHENG. Study of Optical Properties and Electronic Structure of V in ZnS by First Principles[J]. Chinese Journal of High Pressure Physics, 2006 , 20 (1) : 56 -60 .
  • 中国工程物理研究院科学基金资助项目(20030103)
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2006年第20卷第1期
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  • 接收时间:2004-11-09
  • 首发时间:2026-11-01
  • 出版时间:2006-03-05
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  • 收稿日期:2004-11-09
  • 修回日期:2005-03-18
基金
中国工程物理研究院科学基金资助项目(20030103)
作者信息
    1.中国地质大学数学与物理学院,湖北 武汉 430074
    2.中国工程物理研究院流体物理研究所,四川 绵阳 621900
    3.四川师范大学固体物理研究所,四川 成都 610066
    4.西华大学建筑与土木工程系,四川 成都 610039

通讯作者:

姬广富,男,博士,副研究员. E-mail:
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