Article(id=1323357959207657709, tenantId=1146029695717560320, journalId=1255847867265597444, issueId=1323357913695268984, articleNumber=null, orderNo=null, doi=null, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1048694400000, receivedDateStr=2003-03-27, revisedDate=1066147200000, revisedDateStr=2003-10-15, acceptedDate=null, acceptedDateStr=null, onlineDate=1793442724277, onlineDateStr=2026-10-31, pubDate=1078416000000, pubDateStr=2004-03-05, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793442724277, onlineIssueDateStr=2026-10-31, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793442724277, creator=13701087609, updateTime=1793442724277, updator=13701087609, issue=Issue{id=1323357913695268984, tenantId=1146029695717560320, journalId=1255847867265597444, year='2004', volume='18', issue='1', pageStart='1', pageEnd='96', issueExtLink='null', onlineDate='null', pubDate='1078416000000', pubDateStr='2004-03-05', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793442713426, creator='13701087609', updateTime=1793442858910, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1323358523970695890, tenantId=1146029695717560320, journalId=1255847867265597444, issueId=1323357913695268984, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1323358523970695891, tenantId=1146029695717560320, journalId=1255847867265597444, issueId=1323357913695268984, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=83, endPage=89, ext={EN=ArticleExt(id=1323357959434150126, articleId=1323357959207657709, tenantId=1146029695717560320, journalId=1255847867265597444, language=EN, title=Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates, columnId=1322942130796245184, journalTitle=Chinese Journal of High Pressure Physics, columnName=Research Note, runingTitle=null, highlight=null, articleAbstract=

Two different W interlay/substrate bonding interfaces for the adhesion of diamond film deposited on WC-Co substrate were investigated using bias enhancing nucleation method, in microwave plasma enhanced chemical vapor deposition (MWCVD) device. The results indicate that hydrogen plasma decarburization, W interlayer sputtering, recarburization with negative biasing induce chemical reaction bonding interface formed between the W interlayer and the substrate. Recarburized W interlayer in the initial diamond deposition strongly adhere to WC grains on the surface of WC-Co substrate, and consequently improved the adhesion of diamond film on WC-Co substrate. This pretreatment improved the adhesion of diamond film more obvious, compared with sputtering W interlayer directly on the substrate, in which physical bonding interlayer formed. Carburization with high negative biasing can improve the roughness of the substrate surface, and consequently improve the effect of mechanical interlock. The nucleation density was increased by negative biasing and therefore improved the contact area between the diamond film and the substrate, consequently improved the adhesion of diamond film on WC-Co substrate.

, authors=Chuan-Xin WANG^{1, 2}, Jian-Hua WANG¹, Wei-Dong MAN^{1, 2}, Zhi-Bin MA¹, Sheng-Gao WANG¹, Zhi-Cheng KANG², authorsList=Chuan-Xin WANG, Jian-Hua WANG, Wei-Dong MAN, Zhi-Bin MA, Sheng-Gao WANG, Zhi-Cheng KANG, authorCompany=null, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1323357959702585583, articleId=1323357959207657709, tenantId=1146029695717560320, journalId=1255847867265597444, language=CN, title=W过渡层结合界面对金刚石薄膜在WC-6%Co上的附着力的影响, columnId=1322942131614134466, journalTitle=高压物理学报, columnName=研究简报, runingTitle=null, highlight=null, articleAbstract=

在微波等离子体化学气相沉积装置中，采用负偏压形核等方法，研究两种不同的W过渡层/基体结合界面对金刚石薄膜与WC-6%Co附着力的影响。采用氢等离子体脱碳、磁控溅射镀W、高偏压碳化等方法，在YG6衬底表面形成化学反应型界面，W膜在碳化时和基体WC连为一体，极大地增加了W膜与基体的附着力，明显优于直接镀钨、碳化形成的物理吸附界面。在高负偏压下碳化，能提高表面粗糙度，增加膜与基体机械钳合，而负偏压形核增加核密度，从而增加膜与基体的接触面积，结果极大地提高了金刚石薄膜的附着力。

, authors=王传新^{1, 2}, 汪建华¹, 满卫东^{1, 2}, 马志斌¹, 王升高¹, 康志成², authorsList=王传新, 汪建华, 满卫东, 马志斌, 王升高, 康志成, authorCompany=null, correspAuthors=null, authorNote=, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=khewsqznAss+jipVI9G8ng==, magXml=/8MvjperVDn4e5IwaSXU1Q==, pdfUrl=null, pdf=mzQuzGUlIM7HIGZ9/MpOeA==, pdfFileSize=4220778, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=QEQPYoPb+d4JC6LtQWyrRw==, mapNumber=null, fund=null)}, authors=[Author(id=1323357960109433079, tenantId=1146029695717560320, journalId=1255847867265597444, articleId=1323357959207657709, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=wcx65@sohu.com, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1323357960176541946, tenantId=1146029695717560320, journalId=1255847867265597444, articleId=1323357959207657709, authorId=1323357960109433079, language=EN, stringName=Chuan-Xin WANG, firstName=Chuan-Xin, middleName=null, lastName=WANG, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=^{1, 2}, address=^1.Province Key Laboratory of Plasma Chemical & Advanced Materials, Wuhan Institute of Chemical Technology, Wuhan 430073, China
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^2.中国科学院等离子体物理研究所，安徽 合肥　230031, bio={"content":"

王传新（1965—），男，博士研究生，高级工程师，主要研究方向：低温等离子体应用. E-mail：wcx65@sohu.com

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王传新（1965—），男，博士研究生，高级工程师，主要研究方向：低温等离子体应用. E-mail：wcx65@sohu.com

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