电源学报

GaN HEMT功率器件的改进型在线死区补偿方法研究

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高赟翔中国电源学会会员 ¹ , 刘伟 ¹ , 黄珊 ² , 王孝洪 ² , 姜庭豪 ¹

电源学报 | 功率半导体器件 2025,23(6): 340-352

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电源学报 |功率半导体器件 2025 , 23 (6) : 340 -352

GaN HEMT功率器件的改进型在线死区补偿方法研究

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高赟翔中国电源学会会员¹, 刘伟¹, 黄珊², 王孝洪², 姜庭豪¹

作者信息

^1.山东工商学院信息与电子工程学院，烟台　264005

^2.华南理工大学自动化科学与工程学院，广州　510000

通讯作者:

高赟翔（1996—　），男，中国电源学会会员，通信作者，硕士研究生。研究方向：电力电子及运动控制。E-mail：2021420021@sdtbu.edu.cn。

作者简介:

刘伟（1977—　），男，博士，副教授。研究方向：电力电子技术应用、嵌入式系统应用、计算机控制及信号处理等。E-mail：liuwei@sdtbu.edu.cn。

黄珊（1998—　），女，硕士研究生。研究方向：电力电子及运动控制。E-mail：571776086@qq.com。

王孝洪（1976—　），男，博士，教授。研究方向：电力电子技术及其在新能源、节能领域的应用，电机驱动技术及其在机器人、运动控制领域的应用。E-mail：xhwang@scut.edu.cn。

姜庭豪（1998—　），男，硕士研究生。研究方向：计算机视觉。E-mail：2021420008@sdtbu.edu.cn。

Research on Improved Online Dead-time Compensation Method for GaN HEMT Power Devices

Yunxiang GAO Member, CPSS¹, Wei LIU¹, Shan HUANG², Xiaohong WANG², Tinghao JIANG¹

Affiliations

^1.School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China

^2.School of Automation Science and Engineering, South China University of Technology, Guangzhou 510000, China

出版时间: 2025-10-30 doi: 10.13234/j.issn.2095-2805.2025.6.340

文章导航

摘要

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为了保证三相桥臂安全可靠运行，需要设置合理的死区时间。氮化镓高电子迁移率晶体管GaN HEMT（gallium nitride high-electron mobility transistor）由于器件本身特性，死区时间内电压变化情况与传统Si器件存在差异。对GaN HEMT功率器件反向导通压降较大的问题进行分析，提出了一种基于GaN HEMT功率器件的改进型在线死区补偿方法。该方法既可以避免电路噪声对电流方向判断的影响，同时又可以减小相电压误差，降低电流谐波，提高电路稳定性。最后通过仿真实验和搭建实验平台验证了改进型在线死区补偿方法的有效性，在反向导通压降较大的情况下较传统的死区时间补偿方法具有明显的优势。

关键词

氮化镓高电子迁移率晶体管 / 在线死区补偿 / 谐波抑制 / 效率

Abstract

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To ensure the safe and reliable operation of a three-phase bridge leg, it is necessary to set a reasonable dead-time. Due to its own characteristics, the voltage variation in the dead-time of a gallium nitride high-electron mobility transistor (GaN HEMT) is different from those of traditional Si devices. In this paper, the problem of large reverse conduction voltage drops in GaN HEMT power devices is analyzed, and an improved online dead-time compensation method based on GaN HEMT power devices is proposed. This method can not only avoid the influence of circuit noise on the judgment of current direction, but also reduce the phase voltage error and current harmonics, thus improving the circuit stability. Finally, the effectiveness of the improved online dead-time compensation method was verified by simulation experiments and the construction of an experimental platform, indicating that it has obvious advantages over the traditional dead-time compensation method under the condition of large reverse conduction voltage drops.

Key words

Gallium nitride high-electron mobility transistor (GaN HEMT) / online dead-time compensation / harmonic suppression / efficiency

引用本文

高赟翔中国电源学会会员, 刘伟, 黄珊, 王孝洪, 姜庭豪. GaN HEMT功率器件的改进型在线死区补偿方法研究. 电源学报, 2025 , 23 (6) : 340 -352 . DOI: 10.13234/j.issn.2095-2805.2025.6.340

Yunxiang GAO, Wei LIU, Shan HUANG, Xiaohong WANG, Tinghao JIANG. Research on Improved Online Dead-time Compensation Method for GaN HEMT Power Devices[J]. Journal of Power Supply, 2025 , 23 (6) : 340 -352 . DOI: 10.13234/j.issn.2095-2805.2025.6.340

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2025年第23卷第6期

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文章信息

doi: 10.13234/j.issn.2095-2805.2025.6.340

接收时间：2023-05-04
首发时间：2026-10-26
出版时间：2025-10-30

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收稿日期：2023-05-04
修回日期：2023-05-30
录用日期：2023-07-27

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作者信息

^1.山东工商学院信息与电子工程学院，烟台　264005

^2.华南理工大学自动化科学与工程学院，广州　510000

通讯作者:

高赟翔（1996—　），男，中国电源学会会员，通信作者，硕士研究生。研究方向：电力电子及运动控制。E-mail：2021420021@sdtbu.edu.cn。

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https://castjournals.cast.org.cn/joweb/dyxb/CN/10.13234/j.issn.2095-2805.2025.6.340

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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