光电工程

基于Au-Gr非对称肖特基结的薄膜铌酸锂波导集成MoTe₂光电探测器

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郑鸿男 ¹^,² , 欧家乐 ¹^,² , 项炳锡 ¹^,^*^,^*

光电工程 | 科研论文 2026,53(7): 260099-1

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光电工程 |科研论文 2026 , 53 (7) : 260099 -1

基于Au-Gr非对称肖特基结的薄膜铌酸锂波导集成MoTe₂光电探测器

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郑鸿男¹^,², 欧家乐¹^,², 项炳锡¹^,^*^,^*

作者信息

¹深圳技术大学新材料与新能源学院，广东深圳 518118

²深圳大学应用技术学院，广东深圳 518060

通讯作者:

项炳锡，xiangbingxi@sztu.edu.cn

作者简介:

†同等贡献作者

作者贡献

郑鸿男：论文写作；欧家乐：研究资料的收集，实验的设计与完成，数据收集；项炳锡：指导论文选题、论文修改、实验流程。

郑鸿男(2000-)，男，硕士，主要从事薄膜铌酸锂器件研究。E-mail：2410262126@stumail.sztu.edu.cn 2410262126@stumail.sztu.edu.cn

欧家乐(1999-)，男，硕士，主要从事薄膜铌酸锂器件研究。E-mail：2310412086@stumail.sztu.edu.cn 2310412086@stumail.sztu.edu.cn

项炳锡(1988-)，男，副教授，主要从事薄膜铌酸锂光子集成器件研究。E-mail：xiangbingxi@sztu.edu.cn xiangbingxi@sztu.edu.cn

TFLN waveguide-integrated MoTe₂ photodetector based on an Au-Gr asymmetric schottky junction

Hongnan Zheng¹^,², Jiale Ou¹^,², Bingxi Xiang¹

Affiliations

¹College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, Guangdong 518118, China

²College of Applied Technology, Shenzhen University, Shenzhen, Guangdong 518060, China

Corresponding Author:

xiangbingxi@sztu.edu.cn

出版时间: 2026-07-25 doi: 10.12086/oee.2026.260099

文章导航

摘要

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本文基于薄膜铌酸锂(thin-film lithium niobate, TFLN)质子交换波导平台，以少层2H-MoTe₂作为光吸收层与载流子输运沟道，通过功函数差异化的金(Au)与机械剥离少层石墨(Gr)电极构建非对称肖特基结，采用干法转移工艺实现范德华异质集成，设计并制备了一种自驱动光电探测器。该器件在零偏压下可依靠内建电场驱动光生载流子分离与输运，在1310 nm的光照下可获得2.22 mA/W的响应度。此外，在1310 nm的光照下，探测器自驱动开关比达2.1 × 10⁶，该结果在已报道的波导集成光电探测器中处于较高水平，表明其在片上集成光子系统中具有良好的应用潜力。这种非对称肖特基结的设计为TFLN波导平台上低功耗、高兼容性的自驱动光电探测提供了一种切实可行的技术路径。

关键词

自驱动 / 光电探测器 / 薄膜铌酸锂 / 质子交换波导

Abstract

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Objective

Thin-film lithium niobate (TFLN) inherits excellent intrinsic properties of bulk lithium niobate and features high refractive index contrast, strong optical field confinement and device miniaturization capability. It has become a core platform for next-generation photonic integrated circuits. However, the wide bandgap, weak light absorption and low electrical conductivity of TFLN prevent it from achieving efficient photodetection independently. Heterogeneous integration with high photosensitivity materials is the core technical solution to this problem. Transition metal dichalcogenides (TMDs), especially 2H-phase molybdenum ditelluride (2H-MoTe₂), exhibit narrow bandgap, strong near-infrared absorption and good compatibility with TFLN platforms, making them ideal photosensitive materials for TFLN waveguide-integrated photodetectors. Existing TFLN waveguide-integrated two-dimensional material photodetectors mostly rely on external bias voltage to separate and transport photogenerated carriers, which increases system power consumption and circuit design complexity. Existing self-powered detection schemes suffer from poor compatibility with TFLN planar microfabrication processes, and easily introduce interface defects and lattice damage. This work aims to develop a low-power, high-compatibility and high-performance self-powered photodetector integrated on TFLN waveguide platform.

Methods

The device was fabricated based on TFLN proton-exchange waveguide platform. Few-layer 2H-MoTe₂ was used as both light absorption layer and carrier transport channel. An asymmetric Schottky junction was constructed using gold (Au) and mechanically exfoliated few-layer graphite (Gr) electrodes with distinct work functions. All contacts between MoTe₂ and electrodes were realized by dry transfer process to form van der Waals heterointerfaces, which avoided Fermi level pinning effect and interface damage caused by traditional metal evaporation. The device structure consisted of a 500 μm thick silicon substrate, a 2 μm thick SiO₂ dielectric cladding layer, and a 0.5 μm thick x-cut lithium niobate single-crystal thin film with 5 μm wide proton-exchange waveguides. The source electrode was a evaporated Au (30 nm)/Cr (40 nm) stack, and the drain electrode was few-layer Gr prepared by dry transfer. Atomic force microscopy (AFM) was used to characterize the thickness of Gr and MoTe₂ layers. Raman spectroscopy was employed to verify the crystal phase and structural integrity of the materials after transfer. An Au/MoTe₂/Au field-effect transistor was fabricated to determine the carrier type of MoTe₂. A photoelectric test system was built to measure the I-V characteristics, photocurrent-power dependence, photoresponse time and dark current noise power spectral density of the device at 1310 nm communication wavelength. The actual optical power coupled into the waveguide was calibrated using a reference waveguide with identical dimensions.

Results and Discussions

The Au-MoTe₂-Gr photodetector was successfully fabricated and exhibited both self-powered and bias-driven operation modes. AFM characterization showed that the thickness of Gr layer was approximately 35 nm and that of MoTe₂ layer was about 25 nm. Raman spectra confirmed that both materials maintained excellent 2H crystal phase without phase transition or lattice damage after dry transfer. The transfer characteristic curve of the Au/MoTe₂/Au transistor indicated typical p-type semiconductor transport behavior of the few-layer MoTe₂. Energy band analysis revealed that Au formed a high-barrier Schottky contact with MoTe₂, while Gr formed a low-barrier contact. A net built-in electric field directed from Gr to Au was established in the channel, which drove the separation and transport of photogenerated electron-hole pairs at zero bias voltage. The I-V curves showed obvious unidirectional rectification characteristics in dark environment, verifying the successful construction of the asymmetric Schottky junction. Under 0.5 V forward bias, the device achieved a maximum responsivity of 42.65 mA/W at 1310 nm wavelength. In self-powered mode, the responsivity reaches 2.22 mA/W and the maximum optical on/off ratio is as high as 2.1 × 10⁶. This result is at a relatively high level among reported waveguide-integrated photodetectors, demonstrating its good application potential in on-chip integrated photonic systems. The device exhibited fast photoresponse speed, with rise time of 81 μs and fall time of 291 μs in self-powered mode, corresponding to a bandwidth of approximately 4.3 kHz. The specific detectivity was calculated to be 7.5 × 10⁷ Jones under self-powered operation. The photocurrent showed sublinear dependence on incident optical power, with power-law exponents of 0.47 under 0.5 V bias and 0.55 in self-powered mode. This phenomenon was attributed to the saturation of trap states and enhanced carrier recombination in the MoTe₂ channel with increasing incident optical power.

Conclusions

The Au-Gr asymmetric Schottky junction design provides a practical technical path for low-power and high-compatibility self-powered photodetection on TFLN waveguide platforms. The fabricated device achieves stable dual-mode operation at 1310 nm communication wavelength, combining high on/off ratio, fast photoresponse and low power consumption. It demonstrates great application potential in on-chip integrated photonic systems.

Key words

self-powered / photodetector / thin-film lithium niobate / proton-exchange waveguide

引用本文

郑鸿男, 欧家乐, 项炳锡. 基于Au-Gr非对称肖特基结的薄膜铌酸锂波导集成MoTe₂光电探测器. 光电工程, 2026 , 53 (7) : 260099 -1 . DOI: 10.12086/oee.2026.260099

Hongnan Zheng, Jiale Ou, Bingxi Xiang. TFLN waveguide-integrated MoTe₂ photodetector based on an Au-Gr asymmetric schottky junction[J]. Opto-Electronic Engineering, 2026 , 53 (7) : 260099 -1 . DOI: 10.12086/oee.2026.260099

正文

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1　引　言

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铌酸锂(Lithium niobate，LN)晶体是一种性能优异的多功能铁电材料，具有突出的声光、电光、非线性光学以及光热特性，已然成为新一代光子集成电路研究中的关键，展现出成为下一代光子集成主流平台的巨大潜力^[1-7]。随着智能切片、化学机械抛光(chemical mechanical planarization，CMP)技术的成熟，高质量的薄膜铌酸锂(thin-film lithium niobate, TFLN)制造成为可能^[8]。TFLN继承了体铌酸锂的优异本征性能，同时具备更高的折射率对比度、更强的光场限制能力与实现器件微型化的能力，近年来广泛用于制备高性能电光调制器、光频梳、非线性频率转换器等器件^[2,9-12]。但TFLN本身具有宽禁带、弱光吸收、低电导率的特性，使其无法单独实现高效光电探测，通过与高光敏性材料的异质集成，成为解决这一问题的核心技术路径^[1,13-15]。

过渡金属二硫化物( Transition metal dichalcogenides，TMDs)凭借带隙可调、宽光谱响应、高载流子迁移率和具备无晶格失配的范德华异质集成的优势^[16]，成为TFLN异质集成的优质光敏材料。TMDs典型材料包括二硫化钼(MoS₂)、二硫化钨(WS₂)、二碲化钼(MoTe₂)等，环境稳定性好，可通过异质集成、缺陷调控及应变调控等多种策略精准调控器件响应带宽，且与硅基CMOS工艺，TFLN等主流光子学平台具有良好的兼容性^[17-18]。其中2H相二碲化钼(2H-MoTe₂)，具有窄禁带与强近红外光吸收特性，在通信波段展现出高光响应度，是TFLN波导集成光电探测器的理想候选材料^[16,19-20]。

2022年，Wang等^[21]首次报道了一种铌酸锂刻蚀波导集成黑磷的光电探测器，在1550 nm波长测得0.148 A/W的响应度，该工作验证了二维材料与铌酸锂波导集成的可行性；2023年，Hu等人^[22]报道了一种质子交换铌酸锂波导集成黑磷的高性能光电探测器，利用质子交换波导平坦的表面结构降低了黑磷的形变与内应力。随后2024年，Yang等人^[23]利用MoTe₂与质子交换铌酸锂波导集成获得高性能光电探测器，在 1310 nm 波长、1 V偏压下实现309 mA/W的高响应度及低至1.13 nA的暗电流；2025年，Hu等人^[24]进一步利用MoTe₂边缘弯折增强光伏效应，在质子交换波导上实现可控自驱动行为。

现有TFLN波导集成2DMs光电探测器，多依赖外加偏压实现光生载流子的分离与输运，不仅增加了系统功耗，还引入了额外的电路设计复杂度^[22,25-26]；而自驱动探测方案，多采用2DMs不对称接触或者异质结能带工程、湿法电极转移等工艺，与TFLN平面微纳加工工艺兼容性差，且易引入界面缺陷与晶格损伤，难以与片上其他光子器件实现单片集成^{[23-24,27-28]}。基于此，本文以少层2H-MoTe₂作为光吸收层与载流子输运沟道，通过功函数差异化的金(Au)与机械剥离少层石墨(Gr)，构建非对称肖特基结；二者与MoTe₂的接触均采用干法转移工艺，避免了传统金属蒸镀带来的费米能级钉扎效应与界面损伤。该器件兼具两种工作模式：既可在零偏压下依靠内建电场实现自驱动低功耗光电探测，1310 nm波长下的光响应度为2.22 mA/W，最大光开关比达2.1 × 10⁶；也可在施加偏压下正常工作，0.5 V正向偏置下，1310 nm波长下的最大响应度为42.65 mA/W，适配片上集成光子系统的多场景应用需求。

2　器件结构与表征

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如图1(a, b)所示，器件结构分为三层：底层为500 μm厚的硅衬底；中间层为2 μm厚的SiO₂介质层，为波导提供低折射率包层；顶层为0.5 μm厚的x切铌酸锂单晶薄膜，是光波导的核心载体。波导为质子交换光波导，制备于铌酸锂薄膜表面，波导宽度为5 μm。相较于刻蚀脊型波导，质子交换波导表面无晶格损伤与形貌起伏，具有极高的表面平整度，可有效避免2DMs转移过程中因波导表面凸起产生的应力形变与晶格损伤^[22]。源电极采用蒸镀的金(30 nm)/铬(40 nm)叠层结构，铬层用于提升金电极与铌酸锂的结合力；另一侧采用干法转移工艺制备Gr漏极。器件偏压定义为源极相对于漏极施加的电压，其中正向偏压对应源极电势高于漏极。Gr漏极的制备过程如下：首先采用机械剥离法将Gr块体材料剥离得到Gr薄片并转移至聚二甲基硅氧烷(PDMS)弹性基底表面，在光学显微镜下筛选出尺寸合适、表面平整的Gr薄片后，借助微机械转移平台将其精确对准波导的无电极区域并紧密贴合，随后加热至 85℃使 PDMS 粘附力降低，Gr通过范德华力牢固粘附并保留于TFLN平台上，完成转移过程。最终，Au电极与Gr电极对称分布于质子交换波导两侧。Au/Cr电极蒸镀及Gr的干法转移均兼容常规片上微纳加工流程，其中Gr转移采用低温无刻蚀工艺实现异质集成，不涉及对 TFLN 波导的直接结构加工，对波导传播损耗的附加影响预计较小。完成电极制备后，通过机械剥离选取形状与厚度适宜的MoTe₂，使用与Gr相同的工艺干法转移至波导处，覆盖波导并与电极生成良好接触。MoTe₂与电极的接触采用干法转移工艺，相较于传统湿法转移或金属蒸镀方式，可有效减少有机残留与界面污染，并降低界面态引起的费米能级钉扎效应，从而有利于获得更洁净的异质结接触界面^[29-30]。图1(c)展示了制备完成Au-MoTe₂-Gr探测器的俯视光学显微镜图。

通过原子力显微镜(atomic force microscope，AFM)对制备的Gr与MoTe₂的厚度进行了表征，如图2所示。其中图2(a)为器件的AFM形貌图，图2(b)分别为Gr和MoTe₂对应的高度测量图。结果显示，Gr的厚度约为35 nm，MoTe₂的厚度约为25 nm。图2(c)为Gr、MoTe₂和MoTe₂/Gr的拉曼光谱。少层MoTe₂的拉曼光谱可清晰识别位于~171 cm⁻¹、~231 cm⁻¹附近的两个特征振动峰，分别对应于MoTe₂的面外振动模A_1g以及面内振动模

${\mathrm{E}}^1_{2{\mathrm{g}}} $

，表明MoTe₂为2H晶相且干法转移后未发生相变与晶格损伤^[31]。少层石墨的拉曼光谱呈现出典型的石墨特征峰，分别为位于~1582 cm⁻¹处的G峰与~2723 cm⁻¹处的2D峰，测试范围内无明显的与缺陷相关D峰，表明制备的石墨结晶质量优异^[32]。MoTe₂与石墨异质集成区域的拉曼光谱，可同时清晰观测到二者的特征峰，无额外的特征峰与特征峰偏移现象，表明干法转移工艺未对两种材料的晶体结构造成破坏，成功实现良好的异质集成。为验证本文所采用少层MoTe₂的载流子类型，制备了Au/MoTe₂/Au场效应晶体管并测试其转移特性。结果如图2(d)所示，漏极电流随栅压向负方向变化而增大，表现出典型的p型半导体输运行为，表明所采用的少层MoTe₂为p型半导体^[33]。

3　实验原理与结果

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Au-MoTe₂-Gr探测器的自驱动性能可归因于两侧电极功函数的差异。图3(a)为Au、MoTe₂和Gr三种材料接触前的能带图，少层2H-MoTe₂带隙~0.83 eV，功函数~4.54 eV^[34-35]；Au功函数~5.22 eV^[36]，Gr功函数~4.56 eV^[37]。图3(b)为接触后能带图(图中绿色区域为MoTe₂空穴积累层)，Au与MoTe₂形成高势垒肖特基接触，界面处MoTe₂能带上弯，产生指向Au的强内建电场，而Gr与MoTe₂形成低势垒接触，产生较弱内建电场。这种非对称结构使沟道内形成由Gr指向Au的净内建电场，在零偏压下，MoTe₂在激光下产生的光生电子-空穴对在该电场驱动下分离，电子向Gr、空穴向Au漂移并被收集，实现自驱动光电探测。

通过锥形光纤将激光耦合进入波导后，测试了器件在暗环境及不同光功率下的光电响应特性，并计算相关性能参数。为获得波导内的实际光功率，采用相同尺寸且不含MoTe₂和金属电极的参考波导测量耦合效率。在1310 nm波长下测得参考波导耦合效率为7.7%，据此对入射光功率进行校正。除特殊说明外，本文所述光功率均指实际耦合进入波导的光功率。图4(a)为1310 nm波段下器件的I-V曲线，在暗环境测试下，器件I-V曲线呈现明显的单向整流特性，验证了非对称肖特基结的成功构建。光照下，器件光照总电流随入射光功率提升显著上升，零偏压处可观测到明显的非0电流，证明器件具备自驱动光电响应能力。

器件在正向偏置下，外电场与Au-MoTe₂高势垒结的内建电场方向相反，降低了该结的热电子发射势垒高度，减小了载流子穿越势垒的输运阻力，正向暗电流指数增长；反向偏置下，外电场与内建电场同向，增强载流子分离与收集，且反向暗电流显著低于正向，故可在保持高信噪比的同时获得更高的光响应。

响应度(Responsivity, R)，用于表征光电探测器将入射光功率转换为电信号的能力，其计算公式如下：

$ R=\frac{{I}_{\rm {ph}}}{P} \ ,$

(1)

其中I_ph表示光电流，指器件在稳态光照总电流(I_light)与暗电流(I_dark)之间的差值，即I_ph = I_light – I_dark；P为耦合进入光波导的入射光功率。

图4(b, c)分别为1310 nm波段0.5 V偏压下，器件光电流与响应度随入射光功率的变化曲线，器件光电流随入射光功率升高呈单调上升趋势；在测试范围内最小入射光功率处，器件实现了最大光响应度，7.7 nW光功率下，得到光电流328 pA，响应度42.65 mA/W。图4(d)为零偏压下I-t曲线，通过函数发生器控制激光器开关，设置激光开关周期为5 s，半导体参数分析仪记录测试数据。该图表明该探测器有优异的自驱动性能。图4(e, f)分别为1310 nm波段零偏压下器件自驱动光电流与响应度随入射光功率的变化曲线。器件在光功率为770 nW时，光照总电流为1.71 nA，对应响应度为2.22 mA/W，此外2.31 mW功率下，自驱动光开关比高达到2.1 × 10⁶ (在零偏压下于暗环境中直接测得暗电流为I_dark = 3.2 × 10⁻¹³ A，未进行背景扣除或噪声滤波处理；2.31 mW功率下，得到器件对应的光照总电流I_light = 6.7 × 10⁻⁷ A。开关比计算公式r_on/off = I_light/I_dark)。图4(b, e)中的拟合曲线分别为0.5 V偏压和自驱动模式下光电流和功率的幂律拟合，拟合公式为I_ph=A∙P^α。其中，A为拟合常数，α为幂指数。自驱动模式和0.5 V偏压下得到的幂指数分别为0.55和0.47，均小于1，表明器件具有典型的亚线性光响应特征。该现象主要归因于随着入射光功率增加，MoTe₂沟道内光生载流子浓度迅速升高，陷阱态逐渐趋于饱和。陷阱态的逐渐饱和与载流子复合过程增强，导致有效载流子寿命降低，使光电流的增长速率低于入射光功率的增长速率，从而表现出响应度随光功率增加而持续下降的趋势^[24,38]。

图5(a, b)分别显示了探测器在1310 nm波长下、0.5 V偏压和自驱动模式下的光响应时间曲线。测试系统如图5(c)所示，测试过程中激光调制频率为200 Hz,负载电阻为 100 MΩ、入射光功率为 2.31 mW。由图5(a, b)可得，0.5 V偏压下，器件光响应上升时间为105 μs，光响应下降时间为291 μs (上升时间定义为光电流由稳态值的10%上升至90%所对应的时间间隔，下降时间定义为光电流由90%下降至10%所对应的时间间隔)。自驱动模式下，器件光响应上升时间为81 μs，光响应下降时间为291 μs，表现出了优异的响应性能。比探测度(Specific detectivity, D*)用于表征光电探测器在背景噪声存在条件下分辨弱光信号的能力，是评价弱光探测性能的重要指标^[39-40]，其定义为

$ {D}^{*}=\frac{\sqrt{A{\Delta} f}}{NEP} \ ,$

(2)

其中：A (active area)代表探测面积，∆f为测量带宽，NEP(noise equivalent power)表示当信噪比(signal-to-noise ratio)为1时对应的最小可探测光功率。NEP可表示为

$ NEP=\frac{{I}_{\rm {noise}}}{R} \ ,$

(3)

其中：I_noise代表器件的总噪声电流，包括热噪声(Johnson noise)、散粒噪声(shot noise)以及1/f噪声。在二维材料光电探测器中，低频范围内通常以1/f噪声为主导^[41-42]。对于二维材料光电探测器，带宽(bandwidth，BW)可以通过经验公式估算获得：BW = 0.35 /t_rise^[26]。其中，t_rise为器件的光响应上升时间。该器件在1310 nm光照、自驱动工作模式下的上升时间为81 μs，对应带宽约为4.3 kHz。根据图5(d)所示的器件暗电流噪声功率谱密度，得到器件在4.3 kHz处的噪声电流密度为2.8 × 10⁻¹⁴ A∙Hz^−1/2，对应I_noise约为1.84 × 10⁻¹² A。结合1310 nm波长下的自驱动响应度(2.22 mA/W)以及约90 μm²的有效探测面积，计算得到器件的比探测度为7.5 × 10⁷ Jones。

4　结　论

收起

本文设计并制备了一种TFLN波导集成的MoTe₂自驱动光电探测器，有偏压和无偏压两种状态下都在1310 nm通讯波段实现稳定工作。该器件采用Au/Gr非对称电极构建非对称肖特基结，利用光伏效应实现零偏压自驱动光电探测。0.5 V正向偏置下，1310 nm波长下的最大响应度达42.65 mA/W；自驱动模式下，器件无需外置电源即可实现光电转换，1310 nm波长下的光响应度达mA/W量级，最大自驱动光开关比达2.1 × 10⁶，同时器件的光响应上升/下降时间为81 μs/291 μs。

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2026年第53卷第7期

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doi: 10.12086/oee.2026.260099

接收时间：2026-04-24
首发时间：2026-10-22
出版时间：2026-07-25

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收稿日期：2026-04-24
修回日期：2026-06-17
录用日期：2026-06-18

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¹深圳技术大学新材料与新能源学院，广东深圳 518118

²深圳大学应用技术学院，广东深圳 518060

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项炳锡，xiangbingxi@sztu.edu.cn

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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