光电工程

P/μm	D/μm	W/μm	H₁/μm	H₂/μm	H₃/μm	H₄/μm	L/μm
1.8	0.2	1.4	1.2	0.7	0.2	0.2	0.7

P/μm	D/μm	W/μm	H₁/μm	H₂/μm	H₃/μm	H₄/μm	L/μm
1.8	0.2	1.4	1.2	0.7	0.2	0.2	0.7

Ref.	Band range with absorption >90%	Average absorption	Incident angle (average absorption)	Polarization insensitivity	Materials
[19]	7.5~13.25 μm	94% (7.5~13.25 μm)	60° (TM 90%, TE 70%)	Yes	Ti/Si/Al
[20]	8.98~16.21 μm	94% (8.98~16.21 μm)	60°	Yes	Cr/Ge/Si₃N₄/Ti
[21]	9~10.6 μm,11.5~13 μm	85.3% (6~14 μm)	—	No	Ti/Si
[56]	8~14 μm	94.5% (8~14 μm)	60° (TM 82%, TE 80%)	Yes	Ti/Ge
This work	7.92~16.45 μm	91.9% (7~18 μm)	60° (TM 90%, TE 76%)	Yes	Ti/Si₃N₄

Ref.	Band range with absorption >90%	Average absorption	Incident angle (average absorption)	Polarization insensitivity	Materials
[19]	7.5~13.25 μm	94% (7.5~13.25 μm)	60° (TM 90%, TE 70%)	Yes	Ti/Si/Al
[20]	8.98~16.21 μm	94% (8.98~16.21 μm)	60°	Yes	Cr/Ge/Si₃N₄/Ti
[21]	9~10.6 μm,11.5~13 μm	85.3% (6~14 μm)	—	No	Ti/Si
[56]	8~14 μm	94.5% (8~14 μm)	60° (TM 82%, TE 80%)	Yes	Ti/Ge
This work	7.92~16.45 μm	91.9% (7~18 μm)	60° (TM 90%, TE 76%)	Yes	Ti/Si₃N₄

长波红外波段嵌入式结构高效超材料吸收器设计

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沈晓波 ¹ , 王杨 ²^,^*^,^*

光电工程 | 科研论文 2026,53(6): 260052-1

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光电工程 |科研论文 2026 , 53 (6) : 260052 -1

长波红外波段嵌入式结构高效超材料吸收器设计

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沈晓波¹, 王杨²^,^*^,^*

作者信息

¹淮南师范学院电子工程学院，安徽淮南 232038

²淮南师范学院机械与电气工程学院，安徽淮南 232038

通讯作者:

王杨，yangwang91@163.com

作者简介:

作者贡献

沈晓波：研究资料的收集、分析，实验的设计与完成，论文写作；王杨：实验设计、论文修改。

王杨 (1991-)，男，博士，讲师，主要从事微纳器件及机器学习优化设计方法、太阳能电池研究。E-mail：yangwang91@163.com yangwang91@163.com

Design of high-efficiency metamaterial absorber with embedded structure for the long-wave infrared region

Xiaobo Shen¹, Yang Wang²

Affiliations

¹School of Electronic Engineering, Huainan Normal University, Huainan, Anhui 232038, China

²School of Mechanical and Electrical Engineering, Huainan Normal University, Huainan, Anhui 232038, China

Corresponding Author:

yangwang91@163.com

出版时间: 2026-06-25 doi: 10.12086/oee.2026.260052

文章导航

摘要

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大气窗口中的长红外波段，在红外成像、红外隐身等技术领域拥有重要应用潜力。本文结合多层堆叠构型与嵌入式微结构设计理念，设计了一种适配长红外波段的嵌入式结构宽光谱高效吸收器。该吸收器单元结构以Si₃N₄-Ti-Si₃N₄三层堆叠为基底，并在上层Si₃N₄介质层中嵌入Ti圆柱结构，金属与介质形成的嵌入式复合堆叠结构，可有效拓宽吸收带宽并提升吸收效率。该吸收器在长红外波段表现出优良的吸收性能，在7.92~16.45 μm波长范围内，吸收率稳定保持在90%以上，对应的吸收带宽达到8.53 μm。同时，其兼具宽谱吸收、偏振不敏感及宽角吸收特性，60°斜入射条件下，TM模式与TE模式的平均吸收率分别维持在90%和76%。深入分析表明，该吸收器的宽谱高吸收特性，主要来自局域表面等离激元共振 (LSPR)、腔体共振及传播表面等离激元共振 (PSPR)的协同耦合作用。凭借优异的综合吸收性能，该吸收器在红外成像、红外探测、红外传感等领域具有潜在的应用价值。

关键词

超材料 / 吸收器 / 红外 / 宽波段

Abstract

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Objective

Long-wave infrared (LWIR, 6-18 μm), as the core band of the atmospheric window, holds significant potential for applications in fields such as infrared imaging, target detection, solar photothermal power generation, and electromagnetic stealth. Traditional infrared absorbing materials, limited by the intrinsic electromagnetic properties of natural materials, generally face technical bottlenecks including narrow bandwidth, large thickness, and angle sensitivity. As an artificial composite material with subwavelength periodicity, metamaterials can break the limit of electromagnetic regulation of natural materials by precisely designing the equivalent permittivity and permeability of the unit structure, thus paving a new way for broadband infrared absorption technology. Researchers have gradually expanded the absorption bandwidth and performance of metamaterial absorbers through strategies such as coupling of multi-resonator units, design of composite dielectric layers, and optimization of topological structures. Nevertheless, the design of broadband metamaterial absorbers still faces three core challenges: first, most design schemes rely on the planar integration of multi-sized resonant units (such as multi-ring and multi-disk structures), and such horizontal integration tends to increase the unit cell size, which is unfavorable for device miniaturization; second, although multi-layer structures can improve absorptivity and broaden the bandwidth to a certain extent through resonant coupling, an excessive number of structural layers complicates the device architecture, hindering its engineering applications; third, the fabrication of some high-performance devices depends on noble metals (e.g., gold and silver), resulting in high manufacturing costs and poor scalability, which limits their large-scale engineering applications. Therefore, this work aims to design a metamaterial absorber with a simple structure, high absorptivity, and broad operational bandwidth, which is expected to have important practical application prospects in infrared imaging, infrared stealth, infrared sensing and other fields.

Methods

To address the above issues, a broadband high-absorption embedded multilayer metamaterial absorber is proposed based on the concepts of multimode resonance coupling, composite dielectric layer regulation, and impedance matching theory. First, through the design of multilayer resonant units and embedded cylindrical structures, localized surface plasmon resonance (LSPR), propagating surface plasmon resonance (PSPR) and cavity resonance are simultaneously excited within the subwavelength unit, enabling broadband superposition of multiple resonance peaks. Second, a Ti-Si₃N₄ composite structure is adopted, which introduces a low-permittivity Si₃N₄ layer and a high-loss metal Ti layer. The Ti layer enhances the local confinement of the surface plasmon resonance (SPR) field, while the Si₃N₄ layer broadens the bandwidth through intrinsic absorption and energy coupling effects. Meanwhile, the optimized impedance matching design for the two material layers effectively reduces interface reflection loss. Finally, the centrosymmetric design of the unit structure ensures excellent absorption performance over an incident angle range of 0° to 60°, satisfying the angle adaptability requirements in complex application scenarios. The finite-difference time-domain (FDTD) method is used to analyze the absorption performance and explore the physical mechanisms underlying the broadband high-absorption characteristics, providing a theoretical basis for the design of the absorber.

Results

and Discussion The resonant unit of the metamaterial absorber consists of stacked Si₃N₄, Ti, and Si₃N₄ rectangular layers, with Ti cylindrical structures integrated within the upper Si₃N₄ layer. FDTD simulations show that the absorption spectrum of the absorber exhibits absorption peaks of 99.5%, 99.9%, and 99.8% at wavelengths of 8.61 μm, 14.76 μm, and 15.27 μm, respectively. In addition, the absorber maintains an absorption of over 90% in the wavelength range of 7.92 μm to 16.45 μm, corresponding to an absorption bandwidth of 8.53 μm, and exhibits excellent impedance matching within this band. The absorber features polarization insensitivity, with an average absorption of 91.9% across the 0° to 90° polarization angle range. This polarization insensitivity is mainly due to the structural symmetry of the designed absorber, which results in similar optical responses at all polarization angles, thus reducing the influence of polarization angle. Furthermore, the absorber exhibits wide-angle absorption characteristics; under 60° oblique incidence, the average absorptivity for the TM and TE modes remains at 90% and 76%, respectively. Mechanism analysis demonstrates that the broadband and high-absorption characteristics of the absorber mainly arise from the synergistic coupling of LSPR, cavity resonance, and PSPR.

Conclusion

Based on multilayer stacked structures and impedance matching theory, a broadband high-absorption metamaterial absorber is designed, whose unit consists of a three-layer Si₃N₄-Ti-Si₃N₄ stack with Ti cylinders embedded in the upper Si₃N₄ layer. The high-loss metal Ti can excite SPR to enhance broadband absorption, and Si₃N₄ exhibits favorable intrinsic absorption and SPR coupling effects in the infrared band; thus, the Ti-Si₃N₄ composite structure achieves improved absorption efficiency and a broadened absorption bandwidth. FDTD simulations show that the designed absorber exhibits excellent absorption performance in the 7 μm to 18 μm band, with an absorption rate exceeding 90% in the wavelength range of 7.92 μm to 16.45 μm, corresponding to an absorption bandwidth of 8.53 μm. The adoption of a symmetric patterned structure design endows the absorber with polarization insensitivity, and the average absorption rate remains at 91.9% at all polarization angles. In addition, the absorber also demonstrates excellent wide-angle absorption performance; under 60° oblique incidence, the average absorption rates of the TM and TE modes reach 90% and 76%, respectively. Mechanism investigation demonstrates that the broadband and high-absorption characteristics of the absorber mainly arise from LSPR excited on the surface of Ti cylinders, cavity resonance between units, and PSPR at metal-dielectric interfaces. The coupling between various resonances further enhances the absorption performance and broadens the absorption bandwidth. This absorber integrates the excellent properties of broadband absorption, high absorption rate, polarization insensitivity, and wide-angle absorption, showing potential application value in fields such as energy harvesting and optical detection. It also provides an important reference for the structural design and performance optimization of broadband high-absorption metamaterial absorbers in the infrared band.

Key words

metamaterials / absorber / infrared / broadband

引用本文

沈晓波, 王杨. 长波红外波段嵌入式结构高效超材料吸收器设计. 光电工程, 2026 , 53 (6) : 260052 -1 . DOI: 10.12086/oee.2026.260052

Xiaobo Shen, Yang Wang. Design of high-efficiency metamaterial absorber with embedded structure for the long-wave infrared region[J]. Opto-Electronic Engineering, 2026 , 53 (6) : 260052 -1 . DOI: 10.12086/oee.2026.260052

正文

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1　引　言

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长波红外 (Long-wave infrared, LWIR，6~18 μm)作为大气窗口的核心波段，在红外成像、目标探测、太阳能光热发电等领域具有重要的应用前景^[1-5]。传统红外吸收材料受天然材料电磁参数本征特性的影响，普遍面临窄带宽、厚尺寸、角度敏感等技术瓶颈。尽管采用单一谐振单元的超材料吸收器 (metamaterial absorber, MA)可通过表面等离子体共振 (surface plasmon resonance, SPR)实现高吸收率，但单一谐振模式使其难以突破带宽限制^[6-11]，无法满足宽带应用场景的使用需求。

作为一种具备亚波长周期结构的人工电磁材料，超材料通过精确设计单元结构的等效介电常数和磁导率，能够突破天然材料电磁调控的极限，从而为宽带红外吸收技术开辟了新途径。自Landy等人在2008年首次实现微波波段接近完美吸收的电磁吸收器以来^[12]，研究者们通过多谐振器单元耦合、复合介电层设计及拓扑结构优化等策略^[13-18]，逐步扩展了超材料吸收器的吸收带宽与性能。例如，Qin等人利用十字形谐振器，依托传播表面等离子体共振 (propagating surface plasmon resonance, PSPR)与局域表面等离子体共振 (localized surface plasmon resonance, LSPR)的耦合机制，在红外波段 (7.5~13.25 μm)内获得了91.7%的平均吸收效率^[19]。Liang等人设计了一种Cr-Ge-Si₃N₄-Ti纳米十字结构超材料吸收器，结合损耗介质与SPR的耦合作用，将吸收带宽拓展至7.23 μm (8.98~16.21 μm)^[20]。Hou等人面向长波红外波段，通过对腔体共振、LSPR与法布里−珀罗 (F−P)共振模式的联合调控设计一种复合结构超材料吸收器，在6~14 μm波段内实现85.3%的平均吸收效率，并在7~13 μm范围内将平均吸收率提升至91.2%^[21]。Chen等人设计了一种基于纳米矩形结构的三层 (Ti-Si-Ti)薄介质层吸收器，该器件在6.1 μm和19.2 μm两个特征波长处的吸收率分别达到97.05%和98.95%。随后，他们又利用PSPR效应及损耗材料二氧化硅 (SiO₂)的本征吸收特性，设计出一种具有复合介质结构的四层 (Ti-Si-SiO₂-Ti)吸收器，7.5~13.25 μm波段内可实现91.7%的平均吸收效率^[22]。Jia等人还通过全介质氮化硅 (Si₃N₄)材料的多层渐变结构设计，实现了7.15~31.62 μm波段内吸收率超过90%^[23]。同时，研究者还通过引入温度相变材料二氧化钒 (VO₂)，利用图案化设计实现共振效应增强吸收并对超材料吸收器的波段进行调控^[24-25]。

然而，目前宽带超材料吸收器设计仍面临三大核心挑战：其一，多数设计方案依赖多尺寸谐振单元的平面集成 (如多环、多圆盘结构)，水平方向的集成会增大单元尺寸，不利于器件微型化发展^[26-28]；其二，尽管多层结构可通过谐振效应的耦合作用在一定程度上提升吸收率并拓宽带宽，但过多的结构层数会导致器件架构趋于复杂，阻碍其工程化应用^[29-30]；其三，部分高性能器件的制备需依赖贵金属材料 (如金、银)，制造成本高昂且可扩展性较差^[31-33]，从而限制了这类器件的大规模工程应用。

针对上述问题，基于多模共振耦合与复合介质层调控设计理念，结合阻抗匹配理论，提出一种宽带高吸收嵌入式多层超材料吸收器。该吸收器的谐振单元由 Si₃N₄矩形、Ti矩形及Si₃N₄矩形堆叠构成，且在上层Si₃N₄内集成Ti圆柱结构。首先，通过多层谐振单元与嵌入式圆柱结构设计，在亚波长单元内同时激发LSPR、PSPR及腔体共振，实现多共振峰的宽带叠加。其次，采用Ti-Si₃N₄复合结构，引入低介电常数Si₃N₄层与高损耗金属Ti层，其中Ti层可增强SPR场的局域束缚能力，Si₃N₄层通过本征吸收及能量耦合效应拓宽带宽；同时，通过对两层材料进行阻抗匹配优化设计，有效降低界面反射损耗。最后，借助单元结构的中心对称设计，保证吸收器在0°~60°入射角范围内较优的吸收效果，满足复杂应用场景下的角度适应性要求。

2　结构设计与研究方法

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当能量入射至吸收器结构表面时，吸收率 (A)可表示为A=1−R−T，其中T和R分别为透射率与反射率。显然，吸收器的吸收性能主要由反射和透射效应调控。提升吸收性能主要可通过降低反射与抑制透射两种途径实现。为了抑制吸收器的透射率，选用金属Ti作为基底，其厚度设置为200 nm。该厚度超过了入射波可穿透的深度，因此可使透射率T≈0。在此条件下，吸收器的吸收率表达式可简化为A=1−R。根据阻抗匹配理论，反射率的表达式可写为^[34]

$ R (\omega )={\left| \dfrac{Z (\omega )-{Z}_{0}}{Z (\omega )+{Z}_{0}}\right| }^{2}\;, $

(1)

其中：

$ \omega $

为入射频率，Z为结构阻抗，Z₀为自由空间阻抗。吸收器的等效阻抗可通过参数S计算得出，其表达式为^[35-38]

$ S_{11}=S_{22}=\dfrac{\mathrm{i}}{2}\left(\dfrac{1}{Z}-Z\right)\sin(nkd)\; , $

(2)

$ S_{21}=S_{12}=\dfrac{1}{\cos(nkd)-\dfrac{\mathrm{i}}{2}\left(Z+\dfrac{1}{2}\right)\sin(nkd)}\; , $

(3)

$ {\text{Z}}_{\text{r}}=\dfrac{Z (\omega )}{{Z}_{0}}=\pm \sqrt{\dfrac{{ (1+{{S}_{11}})}^{2}-S_{21}^{2}}{{ (1-{{S}_{11}})}^{2}-S_{21}^{2}}}\;, $

(4)

其中：n、k和d分别为吸收器的折射率、波矢和厚度；S₁₁、S₂₂、S₁₂及S₂₁均为参数S，分别表示端口1和2的反射系数，以及反向和正向的传输系数。由上述分析可知，当Z=Z₀时表明结构阻抗与自由空间阻抗达成最优匹配状态，对应的吸收效率可实现理想值1。由此可以看出，归一化阻抗Z_r (Z_r=Z_r′+jZ_r′′，其中Z_r′为实部，Z_r′′为虚部)的取值越接近1，吸收器的阻抗匹配效果越佳。当Z_r′趋近于1且Z_r′′趋近于0时，反射损耗降至最低，电磁波能最大限度地穿透至吸收材料内部，从而使得入射能量在吸收器结构内部被吸收，吸收效果最佳。因此，吸收器可以通过调整材料结构与几何参数，实现对归一化阻抗实部与虚部的调控，并通过对这些参数优化，有望在宽频范围内实现较为优秀的阻抗匹配效果，从而达到超宽波段内的高效吸收。

吸收器的整体结构如图1(a)所示，其单元结构的周期为P。单元结构的示意图如图1(b)和图1(c)所示，该吸收器的核心结构为三层介质-金属-介质结构 (Si₃N₄-Ti-Si₃N₄)，三层结构的厚度分别为H₂、H₃和H₄，对应于氮化硅层、钛层和上层氮化硅层。三层结构的长和宽均为W (图1(b))。同时，该三层结构沉积于氮化硅矩形基底与钛矩形基底之上，其基底的厚度分别为400 nm和100 nm。此外，中间Ti层表面集成有四个Ti圆柱，圆柱的直径为D、高度为H₁ (图1(c))。这种嵌入式构型使Si₃N₄/Ti界面由二维平面接触转变为三维分布的体型接触，显著增大了接触面积，有助于金属界面的电磁能量更高效地耦合至介质层，从而降低界面反射损耗。同时，通过调节H₁在H₂中的嵌入深度与位置，可实现对吸收峰频率及带宽的灵活调控。采用时域有限差分方法 (finite-difference time-domain, FDTD)分析吸收器的吸收性能，x与y方向为周期边界条件，z方向为完美匹配层 (perfectly matched layer，PML)，Ti与Si₃N₄的材料参数分别采用Palik^[39]和Kischkat^[40]。入射光采用平面波，波长范围为7~18 μm，mesh设置为3 nm。吸收器几何参数取值详见表1。此外，所设计吸收器的制备流程如图1(d)所示。首先，采用磁控溅射法在Ti基底层上依次沉积Si₃N₄层与Ti层，并通过光刻技术刻蚀形成Ti圆柱阵列；随后，再次利用磁控溅射沉积Si₃N₄层，并借助光刻工艺完成吸收器阵列结构。

3　结果与讨论

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3.1　吸收特性与机理分析

首先，探究了所设计吸收器结构在电磁波正入射条件下的吸收性能。如图2(a)所示，该吸收器的吸收光谱在8.61 μm、14.76 μm和15.27 μm波长处分别呈现出吸收率为 99.5%、99.9%和99.8%的吸收峰。此外，在7.92~16.45 μm范围内，该吸收器的吸收效率均高于90%，且透射率趋近于0，对应的吸收带宽达8.53 μm。这一高吸收和宽带充分体现了该吸收器在中红外波段电磁波捕获方面的优异性能。

此外，图2(b)为吸收器的相对阻抗谱，在7.92 ~16.45 μm的波段范围内，吸收器相对阻抗的实部取值趋近于1，虚部数值趋近于0，这也印证了该吸收器的结构阻抗与自由空间阻抗具备良好的匹配特性。良好的阻抗匹配有效抑制了入射波的反射，从而提升了该波段内的吸收效率，这一现象也与吸收光谱的测试结果一致。进一步通过参数 S计算等效介电常数 (ε_eff)与等效磁导率 (μ_eff)^[41-44]，结果如图2(c)和2(d)所示。可见在7.92 ~16.45 μm的波段范围内，所设计的吸收器的等效介电常数与等效磁导率相近，进一步验证了波段内的阻抗匹配特性。

为探究所设计吸收器实现宽带高吸收特性的物理机制，针对谐振波长 (8.61 μm、14.76 μm、15.27 μm)下的电场强度|E|与磁场强度|H|分布规律开展了研究。图3 (a-c)为谐振波长 (8.61 μm、14.76 μm、15.27 μm)下吸收器在x-y平面内上层Si₃N₄表面的电场分布图。在8.61 μm波长处，电场沿着x轴在介质 (Si₃N₄)与金属钛 (Ti)圆柱的交界边缘处局域。这表明电场在水平方向上被束缚于两个圆柱之间，相邻两个圆柱在水平方向存在耦合效应，且近场相互作用得到增强。当入射波长为14.76 μm和15.27 μm时，电场主要在Ti圆柱结构与Si₃N₄矩形的边缘位置局域，尤其在Si₃N₄矩形的边缘间隙处更为明显。另外，谐振波长 (8.61 μm、14.76 μm、15.27 μm)下吸收器在x-z平面内电场分布如图3 (d, e)所示。当入射波长为8.61 μm，电场主要汇聚于Ti圆柱的边缘部位。在短波长 (8.61 μm)区域内 (图3(a)和图3(d))，电场增强效应主要源于入射光子入射至Ti圆柱界面，入射的光子与自由电子发生共振，进而在Ti圆柱表面激发SPR^[45-47]，共振过程中能量被局域于Ti表面，促使表面电场产生显著增强效应。另外，在金属图案 (Ti圆柱)边缘处的共振能量被束缚，从而在有限的空间区域内形成了LSPR。共振将入射能量进一步束缚在圆柱边缘处，同时能量进一步耦合到Si₃N₄介质层内，且圆柱之间存在耦合作用，从而增强结构的吸收。对于非磁性材料，吸收的电磁功率可以表示为

$ P_{\text{abs}}=(1/2)\omega\varepsilon^{''}\left|\boldsymbol{E}\right|^2 $

，其中

$ \omega $

为角频率，

$ {\varepsilon }^{''} $

为介电常数的虚部，

$ \left|\boldsymbol{E}\right| $

为材料内部总电场的振幅^[48]。因此，在8.61 μm时，由LSPR共振主导高吸收。当波长为14.76 μm和15.27 μm时 (图3(b,c)和图3(e,f))，电场主要在Ti圆柱边缘及两个单元结构之间的间隙位置局域化。从共振机制看，Ti圆柱边缘的电场由于LSPR导致在边缘处局域；而缝隙间的电场增强主要源于相邻单元间的空气间隙，入射光作用下间隙内部可激发腔体共振从而使得共振能量被局域在缝隙内，进一步增强区域内的电场强度。另外，等效介电常数曲线 (图2(c))在13~16 μm范围内呈现出明显的振荡趋势，表明材料在该频率下具有明显的色散或共振特性；此波段内等效介电常数的虚部呈现正值且较大，说明存在较强的能量损耗^[49-50]，进一步增强吸收。由于共振效应引起的场局域化主要发生在纳米结构表面附近，而本征损耗主要发生在材料内部。因此，此波段内吸收增强主要由腔体共振与Ti的能量损耗所主导，且共振效应占主导地位。

进一步探究入射光激发下吸收器结构内磁场变化规律。图3 (g-i)给出了不同谐振波长 (8.61 μm、14.76 μm、15.27 μm)下，磁场|H|在x–z平面内的分布情况。当入射波长为8.61 μm时，磁场主要在上层的两个Ti圆柱之间Si₃N₄介质层内局域，这也与电场分布结果一致；随着波长的增加 (14.76 μm、15.27 μm)，磁场主要在上层两个Ti圆柱之间的Si₃N₄介质层，以及底部Si₃N₄介质层区域局域。该现象主要源于Ti-Si₃N₄界面处激发的PSPR^[51-52]，该共振将能量局域于介质层内部，进而显著提升了吸收效率。等效磁导率曲线 (图2(d))的实部在整个频谱范围内基本保持正值且相对稳定，在14.76 μm与15.27 μm附近出现微小波动，这意味此波段内发生了较强的磁响应，与磁场分布一致。总的来说，当入射波长较小 (8.61 μm)时，吸收器的高吸收由金属表面的LSPR占主导作用；当入射波长增大时 (14.76 μm、15.27 μm)，吸收器的高吸收主要由金属表面的LSPR、缝隙单元内的腔体共振及介质-金属间的PSPR共同作用。同时，材料的固有能量损耗与不同波长下的各共振模式间频率叠加，有效地提升光吸收并拓展吸收带宽。

3.2　入射源的偏振角度与斜入射角度对吸收性能的影响

偏振角度敏感性作为吸收器的关键性能参数，其强度直接制约着吸收器在复杂光学环境中的应用场景范围。电磁波垂直入射条件下，不同偏振角度 (0°为TM模式，90°为TE模式)对应的吸收光谱如图4(a)所示。随着偏振角度增加，吸收器在7~18 μm波段内的吸收行为基本保持不变，各曲线基本重合。同时采用平均吸收率A_avg来评价该波段的偏振响应特性，其表达式为

$ A_{\mathrm{avg}}=\displaystyle\int_{\mathit{\lambda}_{\mathrm{min}}}^{\mathit{\lambda}_{\mathrm{max}}}A(\mathit{\lambda})\mathrm{d}\mathit{\lambda}/(\mathit{\lambda}_{\mathrm{max}}-\mathit{\lambda}\mathrm{_{min}}) $

，

$\mathit{\lambda}_{\mathrm{max}} $

和

$\mathit{\lambda}_{\mathrm{min}} $

分别表示最大波长和最小波长。图4(b)为偏振角度从0°到90°时的平均吸收曲线。明显地，平均吸收率随偏振角度改变基本稳定在91.9%，表明所设计的吸收器具备偏振不敏感特性。这一特性主要得益于结构自身的对称性，使其在不同偏振角度下均呈现相似的光学响应，因此受入射偏振影响较小。

宽角度吸收特性同样是吸收器的核心性能指标，其表现优劣显著制约着应用场景的拓展。因此，为深入研究该吸收器的宽角度吸收特性，对TM模式与TE模式下不同入射角度的吸收特性开展仿真分析。图5(a)展示了TM模式下，不同斜入射角度对应的吸收光谱。当斜入射角度小于40°时，吸收率和吸收带宽几乎不受入射角度的影响；当入射角增大到60°时，吸收带宽与吸收率均出现明显下降，此时整个波段内的平均吸收约为90%。图5(b)反映了TE模式中入射角度变化对吸收光谱的影响规律。与此对应，当入射角度在20°以内时，吸收率和吸收带宽几乎不受斜入射角度影响，吸收光谱基本重合。然而，当斜入射角度大于20°时，随着入射角度不断增大，吸收带宽与吸收率均呈现明显下降趋势。当入射角提升至60°时，下降幅度最为突出，此时平均吸收率仅为76%。因此，在TM和TE模式斜入射条件下，所设计的吸收器均显示出了宽角度吸收特性。尽管在TM模式与TE模式均显示出了宽角度吸收能力，但两种模式下的吸收行为仍表现出明显区别。斜入射条件下二者吸收特性的差异，主要源于磁场方向的不同。TM模式的磁场方向具备入射角无关性，该特征可对不同入射角度对应的感应电流实现有效调控^[52]，进而使各入射角下均能维持优异的阻抗匹配状态。与之相反，TE模式下的磁场分布对入射角度表现出显著的敏感性，宽角度入射时结构内部感应电流幅值降低，同时能量耦合作用被削弱，最终导致大入射角下TE模式的吸收效率小于TM模式。

综上所述，该吸收器兼具高吸收率、宽工作波段、大角度不敏感及偏振不依赖等优异性能，在高光谱成像与动态成像、宽波段光电探测及光伏器件与光热催化等领域展现出广阔的应用前景^[53-55]。特别是在动态目标探测与非垂直入射场景中，其宽角度稳定性有效克服了传统吸收器在非正入射条件下性能衰减的难题。表2总结了本吸收器与已有同类器件的性能对比结果，可见本设计在吸收带宽、吸收效率及结构材料等方面均具有明显优势。

3.3　吸收器的结构几个参数对吸收性能的影响

通过调控吸收器的图案构型与几何参数，可精准实现对其吸收带宽和吸收率的协同调控。首先，为探究Ti圆柱高度H₁对吸收特性的影响，固定其余几何参数，仅改变H₁取值，对应的吸收光谱如图6(a)所示。当H₁<1.2 μm时，吸收带宽与吸收率随H₁增大而同步上升；当H₁>1.2 μm时，H₁继续增大则导致吸收波段发生红移。当H₁较低 (低于上层Si₃N₄层厚度)时，LSPR难以有效激发，吸收率偏低；随着H₁升高，LSPR被激发，能量局域于金属表面，吸收性能显著提升；而当H₁达到1.6 μm后，Ti圆柱高度改变整体结构阻抗，影响与自由空间的阻抗匹配，从而引发吸收波段红移。其次，为探究Ti圆柱直径D对吸收特性的影响，固定其余几何参数，仅调整 D取值，对应的吸收光谱如图6(b)所示。当D=0 μm时，吸收器为三层结构 (Si₃N₄-Ti-Si₃N₄)，Ti圆柱上的LSPR完全失去作用，吸收性能较差。当D增大至0.2 μm和0.4 μm时，吸收光谱表现出良好的一致性，原因在于该直径范围内Ti圆柱的共振能量能顺利耦合至Si₃N₄层，从而拓宽吸收带宽并提升吸收率。当D增大至0.6 μm时，吸收带宽显著下降，这是因为过大的圆柱直径削弱了相邻Ti圆柱间的能量耦合作用，导致吸收性能同步下降。

为进一步探究上层Si₃N₄层厚度H₂对吸收性能的影响，固定其余几何参数，仅改变H₂取值，所得吸收光谱如图7(a)所示。当H₂<0.7 μm时，吸收带宽与吸收率随H₂增大而同步提升；当H₂>0.7 μm时，两者则呈下降趋势。这一变化归因于Si₃N₄层的本征吸收及其与金属层的能量耦合：厚度过薄时，本征吸收效应不足、能量耦合较弱，导致吸收性能偏低；厚度过大时，则会削弱Ti圆柱边缘的能量耦合效应，进而造成吸收性能下降。图7(b)为结构周期P对应的吸收光谱。当P=1.4 μm时，相邻单元之间无空气间隙，腔体共振模式无法有效激发，因此全波段吸收率均处于较低水平。随着P增大 (P<1.8 μm)，吸收带宽与吸收率均呈上升趋势；但当P进一步增大至2.2 μm时，二者出现下降趋势，原因在于腔体共振效应与腔体宽度相关，过大的宽度会削弱共振强度，导致吸收率降低、吸收带宽变窄。

为进一步探究Ti圆柱之间的间距L对吸收性能的影响，固定其余几何参数，仅改变L取值，所得吸收光谱如图8(a)所示。随着L增大，吸收器的吸收带宽相应拓宽，且在整个波段内吸收率变化较小，表明该结构对制造公差具有良好的容错能力。另外，Si₃N₄与Ti矩形宽度和长度W对吸收的影响如图8(b)所示。当W从1.2 μm增大至1.4 μm时，吸收带宽达最大值；W继续增大则导致单元缝隙宽度降低，从而影响腔体共振效应，导致吸收率与带宽同步下降。

4　结　论

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基于多层堆叠结构与阻抗匹配理论，设计出嵌入式结构的超材料吸收器，其单元由Si₃N₄-Ti-Si₃N₄三层堆叠及嵌入上层Si₃N₄的Ti圆柱构成。高损耗Ti金属可激发PSPR以增强吸收，Si₃N₄在红外波段拥有良好的本征吸收与SPR耦合效应，Ti与Si₃N₄复合结构由此实现吸收效率提升与吸收带宽拓展。FDTD方法模拟结果显示，嵌入式结构吸收器在7~18 μm波段范围内表现出较为优秀的吸收性能，同时在7.92 ~16.45 μm波段内吸收率保持90%以上，实现了8.53 μm的宽吸收带宽。基于对称图案化结构设计，该吸收器展现出优异的偏振不敏感特性，在不同入射偏振角度下平均吸收率均稳定维持在91.9%。此外，该吸收器还展现出较为优秀的宽角度吸收性能，在60°斜入射条件下，该吸收器在TM与TE偏振模式下的平均吸收率仍可分别维持在90%和76%。机理分析显示，该吸收器所呈现的宽波段、高吸收特性，主要归因于Ti圆柱表面激发的LSPR、结构单元间的腔体共振以及金属−介质界面处的传播型PSPR。各类共振模式间的协同耦合效应，进一步强化了器件的吸收强度，并有效拓宽了其吸收带宽。该吸收器集宽谱吸收、高吸收率、偏振不敏感与宽角度吸收的优秀性能，在能量收集、高光谱成像与动态成像、宽波段光电探测等领域具有潜在应用价值，并为高性能吸收器结构设计与性能优化提供了重要的理论参考与设计思路。

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2026年第53卷第6期

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doi: 10.12086/oee.2026.260052

接收时间：2026-02-15
首发时间：2026-10-22
出版时间：2026-06-25

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收稿日期：2026-02-15
修回日期：2026-04-27
录用日期：2026-04-30

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¹淮南师范学院电子工程学院，安徽淮南 232038

²淮南师范学院机械与电气工程学院，安徽淮南 232038

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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