Article(id=1246031930236453581, tenantId=1146029695717560320, journalId=1241755870837649424, issueId=1246031922707677827, articleNumber=null, orderNo=null, doi=10.19636/j.cnki.cjsm42-1250/o3.2024.006, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1706976000000, receivedDateStr=2024-02-04, revisedDate=null, revisedDateStr=null, acceptedDate=null, acceptedDateStr=null, onlineDate=1775006762322, onlineDateStr=2026-04-01, pubDate=1724515200000, pubDateStr=2024-08-25, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1775006762322, onlineIssueDateStr=2026-04-01, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1775006762322, creator=13701087609, updateTime=1775006762322, updator=13701087609, issue=Issue{id=1246031922707677827, tenantId=1146029695717560320, journalId=1241755870837649424, year='2024', volume='45', issue='4', pageStart='427', pageEnd='564', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1775006760527, creator=13701087609, updateTime=1775006830786, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1246032217470779944, tenantId=1146029695717560320, journalId=1241755870837649424, issueId=1246031922707677827, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1246032217470779945, tenantId=1146029695717560320, journalId=1241755870837649424, issueId=1246031922707677827, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=456, endPage=465, ext={EN=ArticleExt(id=1246031930471334615, articleId=1246031930236453581, tenantId=1146029695717560320, journalId=1241755870837649424, language=EN, title=Interaction between Screw Dislocations and Circular-arc Cracks in Magnetoelectroelastic Composites, columnId=1244229834482757770, journalTitle=Chinese Journal of Solid Mechanics, columnName=Research Paper, runingTitle=null, highlight=null, articleAbstract=

The interaction between a penetrating-type circular-arc crack and a screw dislocation in magnetoelectric composites is studied. Firstly, according to the basic equations of magnetoelastic composites and the theory of complex function, the relationship between the anti-plane shear stress, the normal component of the electric displacement, and the normal component of the magnetic induction along the boundary arc c is derived. Then, based on the conformal mapping technique, the complex form of the generalized stress field is obtained by analyzing the stress conditions of the dislocation. In order to discuss the dislocation, dislocation shielding effect, and crack shielding effect at the crack tip, the force-electric-magnetic field intensity factors and the image forces acting on the dislocation are further deduced. By analyzing the analytical solutions and numerical examples, the results show that the shielding effect of the field strength factor decreases with increasing the distance between the circular-arc crack tip and the dislocation point, and the angle formed by their connecting line and the positive half of the x-axis, indicating that the dislocation has a shielding effect on the crack. Additionally, the effect of dislocation on a circular-arc crack is more prominent than on a straight crack. Besides, the image force on the dislocation is affected by the surface properties of the circular-arc crack. Finally, the screw dislocation can reduce the stress intensity factor of the circular-arc crack tip, and the shielding effect rapidly weakens as the angle increases. The shielding effect of the screw dislocation on the crack tip is strengthened as the ratio between the distance from the dislocation point to the crack tip and the half-chord length of the circular-arc crack increases. These conclusions carry meaningful significance for fracture mechanics research and provide a theoretical basis for improving and evaluating the performance of electromagnetic devices.

, correspAuthors=Guanting Liu, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, authorCompany=null, fund=null, authors=null, authorsList=Xinyu Liu, Guanting Liu), CN=ArticleExt(id=1246031940936122562, articleId=1246031930236453581, tenantId=1146029695717560320, journalId=1241755870837649424, language=CN, title=磁电弹性体中螺型位错与圆弧裂纹的相互作用, columnId=1241831201896469478, journalTitle=固体力学学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=

基于广义复变函数理论和保角映射技术,研究了磁电弹性体中具有穿透型的圆弧形裂纹和螺型位错的相互作用. 为讨论磁电弹性体中裂纹尖端的位错、位错屏蔽效应和裂纹屏蔽效应,推导得到了力-电-磁场的场强度因子和作用在位错上的像力. 当圆弧形裂纹退化为Griffith裂纹时,导出了应力和位移的显式解析表达式. 利用解析解并结合数值算例,分析了磁电弹性材料中圆弧形裂纹和螺型位错的相互作用对场强度因子、位错力的影响. 结果表明:圆弧形裂纹尖端到位错点的距离,以及它们连线与x1轴正半轴所形成夹角的不断增大会引起场强因子屏蔽效应的降低,即位错对裂纹具有屏蔽作用;位错对圆弧形裂纹产生的影响比直线裂纹的影响更为明显;作用在位错上的像力会受到圆弧形裂纹表面状况的影响;螺型位错能降低圆弧形裂纹尖端的应力强度因子,且屏蔽效应随夹角的增加而迅速减弱,随位错点到裂尖的距离与圆弧形裂纹半弦长比值的增大,螺型位错对裂纹的屏蔽效应会加强.

, correspAuthors=刘官厅, authorNote=null, correspAuthorsNote=
** E-mail:.
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factors Kτa3/2/(bzc44) versus θ with different values of r/a, figureFileSmall=8zdFQMZPKt7cONpS6yX+lg==, figureFileBig=Oi82VirJ9Nuux4FOyBGCNg==, tableContent=null), ArticleFig(id=1246042386841846569, tenantId=1146029695717560320, journalId=1241755870837649424, articleId=1246031930236453581, language=CN, label=图10, caption=归一化强度因子Kτa3/2/(bzc44)与θ的不同r/a, figureFileSmall=8zdFQMZPKt7cONpS6yX+lg==, figureFileBig=Oi82VirJ9Nuux4FOyBGCNg==, tableContent=null), ArticleFig(id=1246042386938315566, tenantId=1146029695717560320, journalId=1241755870837649424, articleId=1246031930236453581, language=EN, label=Table 1, caption=

Material parameters of magnetoelectroelastic BaTiO3-CoFe2O4 composite

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c44(Pa)e15(C·m-2κ11(C2·N-1·m-2q15(C2·A-1·m-1d11(Ns·(Vc)-1μ11(Ns2·C-2
43×10911.611.2×10-95505×10-125×10-6
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磁电弹性复合材料BaTiO3-CoFe2O4的材料常数

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c44(Pa)e15(C·m-2κ11(C2·N-1·m-2q15(C2·A-1·m-1d11(Ns·(Vc)-1μ11(Ns2·C-2
43×10911.611.2×10-95505×10-125×10-6
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Other relevant parameters

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bz(m)bφ(V)bψ(A)
1.0×10-91.01.0×10-6
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其他相关参数

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bz(m)bφ(V)bψ(A)
1.0×10-91.01.0×10-6
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磁电弹性体中螺型位错与圆弧裂纹的相互作用
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刘欣宇 1 , 刘官厅 2, **
固体力学学报 | 研究论文 2024,45(4): 456-465
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固体力学学报 | 研究论文 2024, 45(4): 456-465
磁电弹性体中螺型位错与圆弧裂纹的相互作用
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刘欣宇1, 刘官厅2, **
作者信息
  • 1内蒙古师范大学数学科学学院,呼和浩特,010022
  • 2内蒙古自治区应用数学中心,呼和浩特,010022

通讯作者:

Interaction between Screw Dislocations and Circular-arc Cracks in Magnetoelectroelastic Composites
Xinyu Liu1, Guanting Liu2, **
Affiliations
  • 1College of Mathematics Science, Inner Mongolia Normal University, Hohhot, 010022
  • 2Inner Mongolia Center for Applied Mathematics, Hohhot, 010022
出版时间: 2024-08-25 doi: 10.19636/j.cnki.cjsm42-1250/o3.2024.006
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基于广义复变函数理论和保角映射技术,研究了磁电弹性体中具有穿透型的圆弧形裂纹和螺型位错的相互作用. 为讨论磁电弹性体中裂纹尖端的位错、位错屏蔽效应和裂纹屏蔽效应,推导得到了力-电-磁场的场强度因子和作用在位错上的像力. 当圆弧形裂纹退化为Griffith裂纹时,导出了应力和位移的显式解析表达式. 利用解析解并结合数值算例,分析了磁电弹性材料中圆弧形裂纹和螺型位错的相互作用对场强度因子、位错力的影响. 结果表明:圆弧形裂纹尖端到位错点的距离,以及它们连线与x1轴正半轴所形成夹角的不断增大会引起场强因子屏蔽效应的降低,即位错对裂纹具有屏蔽作用;位错对圆弧形裂纹产生的影响比直线裂纹的影响更为明显;作用在位错上的像力会受到圆弧形裂纹表面状况的影响;螺型位错能降低圆弧形裂纹尖端的应力强度因子,且屏蔽效应随夹角的增加而迅速减弱,随位错点到裂尖的距离与圆弧形裂纹半弦长比值的增大,螺型位错对裂纹的屏蔽效应会加强.

螺型位错  /  磁电弹性体  /  圆弧形裂纹  /  相互作用

The interaction between a penetrating-type circular-arc crack and a screw dislocation in magnetoelectric composites is studied. Firstly, according to the basic equations of magnetoelastic composites and the theory of complex function, the relationship between the anti-plane shear stress, the normal component of the electric displacement, and the normal component of the magnetic induction along the boundary arc c is derived. Then, based on the conformal mapping technique, the complex form of the generalized stress field is obtained by analyzing the stress conditions of the dislocation. In order to discuss the dislocation, dislocation shielding effect, and crack shielding effect at the crack tip, the force-electric-magnetic field intensity factors and the image forces acting on the dislocation are further deduced. By analyzing the analytical solutions and numerical examples, the results show that the shielding effect of the field strength factor decreases with increasing the distance between the circular-arc crack tip and the dislocation point, and the angle formed by their connecting line and the positive half of the x-axis, indicating that the dislocation has a shielding effect on the crack. Additionally, the effect of dislocation on a circular-arc crack is more prominent than on a straight crack. Besides, the image force on the dislocation is affected by the surface properties of the circular-arc crack. Finally, the screw dislocation can reduce the stress intensity factor of the circular-arc crack tip, and the shielding effect rapidly weakens as the angle increases. The shielding effect of the screw dislocation on the crack tip is strengthened as the ratio between the distance from the dislocation point to the crack tip and the half-chord length of the circular-arc crack increases. These conclusions carry meaningful significance for fracture mechanics research and provide a theoretical basis for improving and evaluating the performance of electromagnetic devices.

screw dislocation  /  magnetoelectroelastic composites  /  circular-arc crack  /  interaction
刘欣宇, 刘官厅. 磁电弹性体中螺型位错与圆弧裂纹的相互作用. 固体力学学报, 2024 , 45 (4) : 456 -465 . DOI: 10.19636/j.cnki.cjsm42-1250/o3.2024.006
Xinyu Liu, Guanting Liu. Interaction between Screw Dislocations and Circular-arc Cracks in Magnetoelectroelastic Composites[J]. Chinese Journal of Solid Mechanics, 2024 , 45 (4) : 456 -465 . DOI: 10.19636/j.cnki.cjsm42-1250/o3.2024.006
作为新型智能材料的典型代表,磁电弹性(Magneto-electro-elastic,MEE)复合材料[1]由于在复杂的热、电、磁和机械载荷条件下具有特殊的耦合行为而备受关注,在各种工程领域中得到越来越广泛的应用[2-4],特别是在传感器和执行器以及能量收集等方面,其特有的压电和压磁效应可以实现电能、磁能和机械能之间的相互转化,可用于制造如压电/磁马达以及制动器等新型电机产品,并在医疗器械等领域中有巨大的应用潜力,因此对磁-电-弹性材料在多场耦合环境下响应问题的研究具有重要意义[5-7]. 这种不同领域之间的耦合为更优的智能结构设计提供了极大的理论基础和实际意义.
位错和裂纹之间的相互作用,会严重影响到材料的宏观力学性能,位错从裂纹尖端的发射是材料脆韧转化的关键. 因此,研究材料中位错和各种形状裂纹之间相互作用的规律,对复合材料的损伤断裂破坏研究具有重要的价值和意义[8]. 螺型位错是工程中常见的缺陷之一,在实际工程制备中,由于在材料上施加电场或磁场会使材料产生变形,近年来,含缺陷的磁电弹性材料破坏力学引起研究者们的广泛关注,为了揭示MEE复合材料和结构中的固有耦合行为和多相特性,以促进它们的进一步应用,国内外许多学者对电磁材料断裂特性及强度性能等方面做出了深入的分析和研究.
Lee等[9]基于复变函数法和保角映射法,研究了压电材料中半无限裂纹与螺型位错的相互作用,得到了场强度因子和裂纹扩展力的显式解. Zhou等[10]发展了立方准晶的位错弹性理论,通过立方准晶的反平面弹性问题的控制方程,得到了其含有螺型位错时的位移场与应力场的解析表达式,为研究此固体材料的塑性变形奠定了重要基础. Zhong[11]研究了十次对称准晶中半无限裂纹与线位错的相互作用,结合复变函数法得到了裂纹尖端的局部应力强度因子和能量释放率,以及作用在线位错上的Peach-Koehler力. Liu等[12]采用Riemann-Schwarz对称原理并结合复势函数奇性主部分析,对螺型位错和圆形界面刚性导体线夹杂的磁电弹耦合干涉效应进行了分析,得到了位错点的扰动应力、电位移和磁感应强度场. Zheng等[13]研究了横观各向同性磁电弹性固体中螺型位错与圆弧界面裂纹的相互作用,通过复变方法导出了单圆弧界面裂纹在基体中的解析表达式,明确给出了应力、电位移和磁感应强度因子等表达式. Qi等[14]根据镜像原理,提出了半无限长磁电弹双材料条中螺位错与界面边裂纹的相互作用模型,得到了磁-电-弹三场的解析解及相应的场强因子和像力的表达式. Li和Liu[15]讨论了一维六方准晶中位错与椭圆缺口的相互作用,利用保角变换法和摄动技术导出了复势的显式表达式,得到了裂纹的应力强度因子和位错作用力,在工程上具有实际应用价值. Feng等[16]运用复变函数法,研究了在无穷远受力电荷载作用下的广义螺型位错偶极子与圆弧形界面裂纹的电弹干涉作用,得到了应力强度因子以及作用在螺型位错偶极子上的位错力和力偶矩. Wang等[17]利用Muskhelishvili理论研究了磁电弹性材料中运动反平面裂纹与螺位错之间的相互作用,得到了磁-电-弹的场强因子精确解. Liu和Yang[18]利用解析泛函理论,对一维六方准晶体中无限多个平行位错与半无限裂纹的相互作用进行了分析,获得了应力场解析解,这些结果对研究准晶体断裂力学中无限多缺陷相互作用问题提供了重要的参考价值. Lv和Liu[19]基于叠加原理和解析理论,讨论了在裂纹表面电磁不渗透的情况下,无限大磁电弹性固体中多条平行螺位错与半无限裂纹相互作用,得到了应力场的封闭解以及多条平行螺位错的Peach-Koehler公式. Li和Cui[20]研究了具有压电效应的一维六方准晶体中螺位错与具有两个不对称裂纹的椭圆孔的相互作用,推导了应力场、场强因子和像力的一般公式. Guo和Zhao[21]利用本征方程,讨论了磁电弹性体中若干平行螺型位错与Griffith裂纹的相互作用的问题,结合Muskhelishvili方法和算子理论,得到磁电弹性体中由位错和裂纹所诱导的力-电-磁场的解析解. Guo等[22]基于保角变换技术和复变函数方法,研究了磁电弹性体中螺型位错与唇口裂纹的相互作用,得到了在裂纹面具有不可渗透条件下的力、电、磁场的解析解. Cao等[23]利用柯西留数定理,考虑椭球体夹杂获得了三维立方准晶材料夹杂问题的Eshelby张量,研究结果对准晶体颗粒夹杂问题具有重要的理论意义. Li等[24]研究了单轴拉伸载荷作用下纳米晶体铝中的裂纹与裂纹尖端发射的位错所形成的滑移面之间的相互作用,通过分布位错法,将裂纹和滑移面等效为均匀分布的连续位错,获得了裂纹面上应力场. Wang等[25]采用纳米压痕实验和离散位错动力学(DDD)模拟研究了氢对(110)表面bcc-Fe中位错形核和运动的影响,DDD模拟结果表明,在氢的作用下位错形核强度降低,位错运动加快. Li等[26]通过分子动力学模拟,研究了(c+a)位错在锥体-i和锥体-ii平面上的分解,发现分解型(c+a)位错、金字塔型(c+a)、基底型(c+a)位错能量由高到低,研究结果为锥体位错的行为和温度效应提供了理论基础. Zeng[27]首次构造了圆弧形裂纹的保角映射函数,为圆弧形裂纹的进一步研究奠定了基础. Pi等[28]对一维六方准晶中的圆弧裂纹以及抛物线裂纹的反平面剪切问题进行了研究. Zheng和Gao[29]针对含有两个圆弧裂纹电致伸缩材料的平面问题,应用复变函数方法获得了在电场作用下复势函数的解析解和应力强度因子的精确解. 基于以上文献发现,对磁电弹性材料中具有穿透型的圆弧形裂纹和螺型位错的相互作用,目前尚未见报道.
本文基于复变函数理论和保角映射技术,研究了磁电弹性体中具有穿透型的圆弧形裂纹和螺型位错的相互作用. 当圆弧形裂纹退化为Griffith裂纹时,导出了应力和位移的显式解析表达式. 为讨论磁电弹性体中裂纹尖端的位错、位错屏蔽效应和裂纹屏蔽效应,推导得到了力-电-磁场的场强度因子和作用在位错上的像力. 研究结果对断裂力学的研究具有一定的实际意义,为提高并评估电磁器件的性能提供理论依据.
在空间直角坐标系中,对于x3轴对称的横观各向同性磁电弹性材料,选取x3轴为磁电极化方向,取垂直于x3轴的x1ox2平面为各向同性面. 在远场加载条件下,对于二维反平面变形,所有物理量仅依赖于相互耦合的反平面位移u3x1x2)、面内电势φx1x2)和磁势ψx1x2),则有:
耦合后的本构方程为:
磁电弹性材料的平衡方程为:
几何方程为:
其中τ13τ23表示应力,DxDy为电位移分量,BxBy为磁感应强度分量;γxzγyz表示应变,ExEy为电场分量,HxHy为磁场分量;uzφψ分别表示反平面位移、电势和磁势;c44是弹性常数,κ11是介电常数,μ11是磁通率张量;e15是压电耦合系数,q15是压磁耦合系数,d11是磁电耦合系数;fifefm和分别表示单位体积体力、体电荷密度和体电流.
这里忽略体力、体电荷密度和体电流的作用,即fi=0,fe=0和fm=0则由式(1)-(4)可以得到:
上式中表示二维Laplace算子;广义位移向量,其中上标T表示矩阵的转置;材料常数矩阵M为:
因为矩阵M非奇异,即,则式(5)化为:
广义应力应变定义为:
根据复变函数理论,将调和函数u设为解析函数的实部,可表示为:
其中z=x+iy;Re表示复函数的实部;Uz)表示任意的解析函数向量.
将式(8)代入到式(2),得到:
沿边界任意弧段c所受的反平面剪切应力与电位移法向分量以及磁感应强度的法向分量的关系为[22]
本文将研究无限大横观各向同性磁电弹性体中具有穿透型的圆弧形裂纹和螺型位错的相互作用,物理模型如图1所示. 取圆弧裂纹两端点连线为x轴,z轴穿过裂纹中点,设圆弧所在圆的圆心在ic处,圆弧所对应的弦长为2a,弓高为h. 螺型位错位于z0r0θ0)处,具有Burgers矢量(bzbφbψ),其中bz表示位移跳跃值;bφ表示电势跳跃值;bψ表示磁势跳跃值. r0为在xoy平面内螺型位错点与圆弧形裂纹尖端的距离,θ0为裂纹尖端与位错点的连线和x轴的正半轴所形成的夹角.
圆弧裂纹的边界条件为:
这里L为圆弧裂纹的表面.
为求解上述问题,引入如下保角映射[27]
其中:
并且|ζ1|<1,|ζ2|>1. 该映射将物理平面(z平面)上圆弧形裂纹外部区域Ω近似地映射到数学平面(ζ平面)上的单位圆γ内部,由点的对应关系可得:
因此,在ζ平面上的边界条件(12)改写为:
其中ζcγ.
此时假设复势函数Uz)由U0z)和U1z)两部分组成:
其中U0z)为无限大磁电弹介质中螺型位错的非扰动解析解,U1z)为相应于自由边界产生的扰动解.
根据式(11),式(16)可以化为:
其中且沿单位圆周γ成立,运用解析延拓理论,根据式(16)和(17)得到:
假设磁电弹性体无扰动场,根据位错的受力条件,解析函数U0z)可表示为:
根据式(20),有:
所以得到A
利用式(17)和(18),在ζ平面上复势函数Uζ)表示为:
其中ζ0表示点z0在映射平面上的对应点.
将式(23)代入式(10),可以得到如下广义应力场:
这里.
定义裂纹右端(z=a)的场强度因子[18]为:
根据等式(24)有:
将式(24)代入式(26),并结合保角映射(13)的反演,可以得到:
利用广义Peach-Koehler公式,作用在位错上的像力[30]可以表示为:
其中为位错处的扰动应力,为位错处的电位移,为位错处的磁感应强度. 根据式(24),计算可得:
随着圆弧裂纹弓高h→0,式(24)可退化为Griffith裂纹与位错相互作用的结果[20]
其中:
为了讨论几何参数和材料常数对场强因子和像力的影响,选取磁电弹性复合材料BaTiO3-CoFe2O4,它以压电材料BaTiO3为夹杂,以压磁材料CoFe2O4为基底混合而成. 磁电弹性复合材料Ba-TiO3-CoFe2O4相关的材料常数[19]选取如下:
图2-4描述了当取不同θ值时,无量纲场强度因子Kτa3/2/(bzc44)、KDa3/2/(bφκ11)以及KBa3/2/(bψμ11)随位错点到圆弧形裂纹尖端的距离与圆弧形裂纹半弦长的比值r/a的变化规律. 由图可知,无量纲场强度因子总是负值,说明螺型位错总是削弱裂纹尖端场强度因子,屏蔽裂纹的扩展. 无量纲场强度因子随r/a的增加而减小,即场强因子随着位错点位置与圆弧形裂纹尖端距离的不断增大而降低屏蔽效应,由此说明位错对裂纹具有屏蔽作用. 此外,无量纲化的场强度因子随裂尖与位错点的连线和x轴的正半轴所形成夹角θ的增大而减小,即裂尖与位错点的连线和x轴的正半轴的夹角的不断减小会引起场强因子屏蔽效应的增大. 以上结果与文献[17]一致. 力-电-磁耦合效应可以忽略不计.
图5-7描述了在r=0.01 m的情况下,当取不同θ值时,无量纲场强度因子Kτa3/2/(bzc44)、KDa3/2/(bφκ11)以及KBa3/2/(bψμ11)随圆弧形裂纹半弦长与弓高比值a/h的变化规律. 由图可知,无量纲场强度因子总为负值,且随a/h的增加而增大,而随裂尖与位错点的连线和x轴的正半轴所形成夹角θ的增加而减小. 可以发现随着a/h的不断增加,场强度因子逐渐趋于恒定,夹角θ的值越大,场强度因子的变化曲线越平缓,即场强度因子趋于稳定的速度更缓慢. 这意味着螺型位错对圆弧形裂纹产生的影响比直线裂纹的影响更为明显.
图8-9描述了当取不同θ值时,归一化像力随位错点到圆弧形裂纹尖端的距离与圆弧形裂纹半弦长的比值r/a的变化趋势. 从图中可以发现,变化角度θ对作用在位错上y方向的像力影响较大,而对作用在x方向的像力影响较小. 图8说明当r/a增加至0.2时,在不同角度θ下作用在x方向上力总为正且作用力呈现先增大后减小的趋势,这意味着位错总是被排斥;而当r/a继续增加时,排斥力逐渐减小最终趋于恒定值,但是当角度θ增大到一定值(π/3)时,排斥力逐渐减小最终转化为吸引力. 图9说明当r/a增加至0.4时,作用在位错上y方向的力由负值变为正值,这意味着位错首先被吸引然后被排斥,但是当角度θ增大到一定值(π/3)时,作用力始终为负,即位错总是被吸引. 由此说明像力会受到圆弧形裂纹表面状况的影响,这表明圆弧形裂纹对位错具有显著的影响.
图10描述了当取不同r/a值时,无量纲化的反平面应力强度因子Kτa3/2/(bzc44)随裂尖与位错点的连线和x轴的正半轴所形成夹角θ的变化规律. 由图可知,反平面应力强度因子随夹角θ的增加而减小,随着r/a的增大,反平面应力强度因子的降幅逐渐减弱. 可以发现无量纲化的反平面应力强度因子始终为负值,说明螺型位错能降低圆弧形裂纹尖端的应力强度因子(屏蔽效应). 屏蔽效应随夹角θ的增加而迅速减弱,且随着r/a值的增大螺型位错对裂纹的屏蔽效应会加强.
本文将保角映射技术和复变函数法,应用于磁电弹性体中具有穿透型的圆弧形裂纹和螺型位错相互作用的研究. 为讨论磁电弹性体中裂纹尖端的位错、位错屏蔽效应和裂纹屏蔽效应,推导得到了力-电-磁场的场强度因子和作用在位错上的像力. 当圆弧形裂纹退化为Griffith裂纹时,导出了应力和位移的显式解析表达式. 基于解析解并利用数值算例,分析了磁电弹性材料下圆弧形裂纹和螺型位错的相互作用对场强度因子、位错力的影响,结论对断裂力学研究具有一定的意义,为提高并评估电磁器件的性能提供理论依据.
(1)场强因子会随位错点与圆弧形裂纹尖端距离的不断增大而降低屏蔽效应,这表明位错对裂纹具有屏蔽作用. 此外,圆弧形裂纹尖端与位错点的连线和x轴的正半轴所形成夹角的不断减小会引起场强因子屏蔽效应的增大. 力-电-磁耦合效应可以忽略不计.
(2)随着圆弧形裂纹半弦长与弓高比值的增加,场强因子趋于恒定. 圆弧形裂纹尖端与位错点的连线和x轴的正半轴所形成夹角的值越大,场强度因子的变化曲线越平缓,即场强度因子趋于稳定的速度更缓慢. 根据图像的变化趋势,可以发现位错对圆弧形裂纹产生的影响比直线裂纹的影响更为明显.
(3)变化角度对作用在位错上x方向的像力影响较大,而对作用在y方向的像力影响较小. 当位错点到圆弧形裂纹尖端的距离与圆弧形裂纹半弦长的比值不断增大时,作用在位错上的像力会受到圆弧形裂纹表面状况的影响,这表明圆弧形裂纹对位错有显著的影响.
(4)螺型位错能降低圆弧形裂纹尖端的应力强度因子,且屏蔽效应随夹角的增加而迅速减弱,随位错点到裂尖的距离与圆弧形裂纹半弦长比值的增大,螺型位错对裂纹的屏蔽效应会加强.
  • 国家自然科学基金项目(12162027)
  • 内蒙古自然科学基金重点项目(2024ZD21)
  • 内蒙古自治区高等学校科学技术研究自然科学重点项目(NJZZ22574)
  • 教育部重点实验室无穷维哈密顿系统及其算法应用(内蒙古师范大学)(2023KFZD02)
  • 内蒙古师范大学基本科研业务费(2023JBZD005)
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2024年第45卷第4期
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doi: 10.19636/j.cnki.cjsm42-1250/o3.2024.006
  • 接收时间:2024-02-04
  • 首发时间:2026-04-01
  • 出版时间:2024-08-25
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  • 收稿日期:2024-02-04
基金
国家自然科学基金项目(12162027)
内蒙古自然科学基金重点项目(2024ZD21)
内蒙古自治区高等学校科学技术研究自然科学重点项目(NJZZ22574)
教育部重点实验室无穷维哈密顿系统及其算法应用(内蒙古师范大学)(2023KFZD02)
内蒙古师范大学基本科研业务费(2023JBZD005)
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    1内蒙古师范大学数学科学学院,呼和浩特,010022
    2内蒙古自治区应用数学中心,呼和浩特,010022

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2种不同金属材料的力学参数

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种数
Number of
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Percentage of total
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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