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Article(id=1322942911381373494, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942385474384734, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20200325, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1588867200000, receivedDateStr=2020-05-08, revisedDate=1592841600000, revisedDateStr=2020-06-23, acceptedDate=null, acceptedDateStr=null, onlineDate=1793343769164, onlineDateStr=2026-10-30, pubDate=1611072000000, pubDateStr=2021-01-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793343769164, onlineIssueDateStr=2026-10-30, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793343769164, creator=13701087609, updateTime=1793343769164, updator=13701087609, issue=Issue{id=1322942385474384734, tenantId=1146029695717560320, journalId=1263187385517883426, year='2021', volume='49', issue='1', pageStart='1', pageEnd='210', issueExtLink='null', onlineDate='null', pubDate='1611072000000', pubDateStr='2021-01-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793343643777, creator='13701087609', updateTime=1793345438198, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1322949911880282449, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942385474384734, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1322949911880282450, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942385474384734, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=180, endPage=188, ext={EN=ArticleExt(id=1322942912966820408, articleId=1322942911381373494, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction, columnId=1319726165087077079, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Article, runingTitle=null, highlight=null, articleAbstract=

The threading dislocation density (TDD) in Si-based Ge films prepared via the epitaxial growth is rather high due to 4.2% lattice mismatch between Si and Ge, leading to a large dark current of the device. However, the low-temperature Ge/Si wafer bonding can lower the TDD in Ge film by restraining the propagation of the misfit dislocations, exhibiting an enormous potential in the fabrication of high-quality large-misfit film. The oxide layer at Ge/Si bonded interface produced via hydrophilic reaction could affect the performance of Ge/Si heterojunction. In this work, a carrier non-local quantum tunneling model was proposed at Ge/Si bonded interface based on the carrier basic equation. The effect of the oxide layer thickness (dO) at Ge/Si bonded interface on the dark current, total current, spectrum response, and bandwidth was investigated and the influencing mechanism of heterojunction performance was clarified by the introduction of the semi-classical approximate solution. It is indicated that the carrier blocking effect of the oxide layer becomes serious as the dO increases, leading to the decrease of the dark current, total current, and spectrum response. In addition, the dO in Ge layer decreases due to the increase of the electric field in the oxide layer, leading to the decrease of the carrier velocity and the high-frequency characteristic. In order to ensure the excellent photoelectric property of Ge/Si heterojunction, the dO should be limited to be <0.50 nm.

, authors=Qiang PENG1, Haipeng KE2, Xinglian LI1, Xin LIN1, Shaoying KE1, Jinrong ZHOU1, authorsList=Qiang PENG, Haipeng KE, Xinglian LI, Xin LIN, Shaoying KE, Jinrong ZHOU, authorCompany=null, correspAuthors=Shaoying KE, Jinrong ZHOU, authorNote=

PENG Qiang (1997-), male, Undergraduate. E-mail:

, correspAuthorsNote=
KE Shaoying (1989-), male, Ph.D., Associate Professor; E-mail:
ZHOU Jinrong (1974-), Master, Associate Professor.
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由于Ge/Si存在4.2%晶格失配，Si基外延Ge中的穿透位错密度（TDD）极高，导致器件暗电流偏大。低温Ge/Si异质键合可以通过抑制失配位错传播降低Ge薄膜中的TDD，在高质量大失配薄膜制备方面展现出巨大的潜力。然而，Ge/Si键合界面由于亲水反应形成的纳米级氧化层会对异质结性能产生影响。基于载流子基本方程，在键合界面构建载流子非局域量子隧穿模型，通过半经典近似解法研究Ge/Si异质键合界面氧化层厚度（dO）对异质结暗电流、总电流、光谱响应、带宽等性能的影响，并揭示异质结性能影响机制。研究表明：随着dO的增加，氧化层对载流子的阻挡效应增强，导致器件暗电流、总电流和光谱响应下降。由于氧化层的分压效应，dO的增加导致Ge层中电场下降，载流子速率降低，进而导致异质结高频特性变差。为确保键合Ge/Si异质结优异的光电特性，dO必须控制在0.50 nm以内。

, authors=彭强1, 柯海鹏2, 李杏莲1, 林鑫1, 柯少颖1, 周锦荣1, authorsList=彭强, 柯海鹏, 李杏莲, 林鑫, 柯少颖, 周锦荣, authorCompany=null, correspAuthors=柯少颖, 周锦荣, authorNote=

彭强（1997—），男，本科生。

, correspAuthorsNote=
柯少颖（1989—），男，博士，副教授；
周锦荣（1974—），男，硕士，副教授。
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PENG Qiang (1997-), male, Undergraduate. E-mail:

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彭强（1997—），男，本科生。

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彭强（1997—），男，本科生。

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Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制
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彭强 1 , 柯海鹏 2 , 李杏莲 1 , 林鑫 1 , 柯少颖 1 , 周锦荣 1
硅酸盐学报 | 研究论文 2021,49(1): 180-188
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硅酸盐学报 |研究论文 2021 , 49 (1) : 180 -188
Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制
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彭强1 , 柯海鹏2, 李杏莲1, 林鑫1, 柯少颖1 , 周锦荣1
作者信息
  • 1.闽南师范大学物理与信息工程学院，福建 漳州 363000
  • 2.福建省漳州第一职业中专学校，福建 漳州 363000
通讯作者:
柯少颖（1989—），男，博士，副教授；
周锦荣（1974—），男，硕士，副教授。
作者简介:

彭强（1997—），男，本科生。

Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction
Qiang PENG1 , Haipeng KE2, Xinglian LI1, Xin LIN1, Shaoying KE1 , Jinrong ZHOU1
Affiliations
  • 1.College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian, China
  • 2.Zhangzhou First Vocational Secondary School, Zhangzhou 363000, Fujian, China
    • Corresponding Author:
    KE Shaoying (1989-), male, Ph.D., Associate Professor; E-mail:
    ZHOU Jinrong (1974-), Master, Associate Professor.

    PENG Qiang (1997-), male, Undergraduate. E-mail:

出版时间: 2021-01-20 doi: 10.14062/j.issn.0454-5648.20200325
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由于Ge/Si存在4.2%晶格失配，Si基外延Ge中的穿透位错密度（TDD）极高，导致器件暗电流偏大。低温Ge/Si异质键合可以通过抑制失配位错传播降低Ge薄膜中的TDD，在高质量大失配薄膜制备方面展现出巨大的潜力。然而，Ge/Si键合界面由于亲水反应形成的纳米级氧化层会对异质结性能产生影响。基于载流子基本方程，在键合界面构建载流子非局域量子隧穿模型，通过半经典近似解法研究Ge/Si异质键合界面氧化层厚度（dO）对异质结暗电流、总电流、光谱响应、带宽等性能的影响，并揭示异质结性能影响机制。研究表明：随着dO的增加，氧化层对载流子的阻挡效应增强，导致器件暗电流、总电流和光谱响应下降。由于氧化层的分压效应，dO的增加导致Ge层中电场下降，载流子速率降低，进而导致异质结高频特性变差。为确保键合Ge/Si异质结优异的光电特性，dO必须控制在0.50 nm以内。

锗/硅异质键合  /  晶格失配  /  界面氧化层  /  电场

The threading dislocation density (TDD) in Si-based Ge films prepared via the epitaxial growth is rather high due to 4.2% lattice mismatch between Si and Ge, leading to a large dark current of the device. However, the low-temperature Ge/Si wafer bonding can lower the TDD in Ge film by restraining the propagation of the misfit dislocations, exhibiting an enormous potential in the fabrication of high-quality large-misfit film. The oxide layer at Ge/Si bonded interface produced via hydrophilic reaction could affect the performance of Ge/Si heterojunction. In this work, a carrier non-local quantum tunneling model was proposed at Ge/Si bonded interface based on the carrier basic equation. The effect of the oxide layer thickness (dO) at Ge/Si bonded interface on the dark current, total current, spectrum response, and bandwidth was investigated and the influencing mechanism of heterojunction performance was clarified by the introduction of the semi-classical approximate solution. It is indicated that the carrier blocking effect of the oxide layer becomes serious as the dO increases, leading to the decrease of the dark current, total current, and spectrum response. In addition, the dO in Ge layer decreases due to the increase of the electric field in the oxide layer, leading to the decrease of the carrier velocity and the high-frequency characteristic. In order to ensure the excellent photoelectric property of Ge/Si heterojunction, the dO should be limited to be <0.50 nm.

germanium/silicon heterogeneous bonding  /  lattice mismatch  /  interface oxide layer  /  electric field
彭强, 柯海鹏, 李杏莲, 林鑫, 柯少颖, 周锦荣. Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制. 硅酸盐学报, 2021 , 49 (1) : 180 -188 . DOI: 10.14062/j.issn.0454-5648.20200325
Qiang PENG, Haipeng KE, Xinglian LI, Xin LIN, Shaoying KE, Jinrong ZHOU. Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction[J]. Journal of the Chinese Ceramic Society, 2021 , 49 (1) : 180 -188 . DOI: 10.14062/j.issn.0454-5648.20200325
基金
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  • 国家自然科学基金(62004087)
  • 福建省自然科学基金(2020J01815)
  • 漳州市自然科学基金(ZZ2020J32)
  • 闽南师范大学校长基金(KJ19014)
  • 教育部产学合作协同育人项目(201802071003; 201901253005; 201901256013)
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doi: 10.14062/j.issn.0454-5648.20200325
  • 接收时间：2020-05-08
  • 首发时间：2026-10-30
  • 出版时间：2021-01-20
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出版历史
  • 收稿日期：2020-05-08
  • 修回日期：2020-06-23
基金
国家自然科学基金(62004087)
福建省自然科学基金(2020J01815)
漳州市自然科学基金(ZZ2020J32)
闽南师范大学校长基金(KJ19014)
教育部产学合作协同育人项目(201802071003; 201901253005; 201901256013)
作者信息
    1.闽南师范大学物理与信息工程学院，福建 漳州 363000
    2.福建省漳州第一职业中专学校，福建 漳州 363000

通讯作者:

柯少颖（1989—），男，博士，副教授；
周锦荣（1974—），男，硕士，副教授。
参考文献
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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20200325
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
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