硅酸盐学报

无机非金属类红外透明导电薄膜的研究进展

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吴彬 ¹^,² , 段超 ¹^,² , 黄易 ¹^,² , 高岗 ¹^,² , 朱嘉琦 ¹^,²

硅酸盐学报 | 国家自然科学基金重点项目中期成果专题—综合评述 2026,54(2): 457-467

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硅酸盐学报 |国家自然科学基金重点项目中期成果专题—综合评述 2026 , 54 (2) : 457 -467

无机非金属类红外透明导电薄膜的研究进展

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吴彬¹^,², 段超¹^,², 黄易¹^,², 高岗¹^,², 朱嘉琦¹^,²

作者信息

^1．哈尔滨工业大学航天学院，复合材料与结构研究所，哈尔滨 150001

^2．哈尔滨工业大学郑州研究院，郑州 450000

通讯作者:

高岗（1990—），男，副教授

朱嘉琦（1974—），男，教授。

作者简介:

吴彬（1997—），男，博士研究生。

Development o_n Inorganic Non-Metallic Infrared Transparent Conductive Films

Bin WU¹^,², Chao DUAN¹^,², Yi HUANG¹^,², Gang GAO¹^,², Jiaqi ZHU¹^,²

Affiliations

^1.National Key Laboratory of Special Environment of Composite Technology, School of Astronautics, Harbin Institute of Technology, Harbin 150001, China

^2.Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China

Corresponding Author:

GAO Gang (1990-), male, Ph.D., Associate Professor; E-mail: gaogang@hit.edu.cn

ZHU Jiaqi (1974-), male, Ph.D., Professor. E-mail: zhujq@hit.edu.cn

WU Bin (1997-), male, Doctoral candidate. E-mail: 23B936096@stu.hit.edu.cn

出版时间: 2026-02-20 doi: 10.14062/j.issn.0454-5648.20250253

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无论在军事领域还是民用领域，3～5 μm和8～12 μm波段在红外探测成像、空间光通信以及红外传感等关乎国家发展、国防安全、民生改善等技术领域具有重要的应用前景。飞行器红外探测制导前端的整流罩既要高红外透过率又需要高电导以实现电磁屏蔽，同时红外光调制器需要低损耗导电薄膜以制备高效、低能耗且尺寸小的调制器单元，因此，发展红外波段的透明与导电薄膜材料具有重大意义。本文系统阐述了薄膜红外透明与导电性能之间的矛盾与协同原理，随后回顾了该领域具有代表性的研究进展，最后对这类功能薄膜材料的未来发展方向及应用前景进行了总结与展望。

关键词

红外 / 透明导电 / 电磁屏蔽

Abstract

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Transparent conducting films (TCFs) as materials that uniquely combine high optical transmittance and high electrical conductivity within a target electromagnetic spectrum become indispensable components in a myriad of modern optoelectronic devices. The development of TCFs operating in the visible light spectrum is a mature field, both in fundamental understanding and in widespread commercial application. These materials being ubiquitous in flat-panel displays, touch screens, and photovoltaics are predominantly based on wide-bandgap oxide semiconductors. A degenerate semiconductor state is achieved via introducing a high concentration of dopants (heavy doping) into a host matrix such as tin-doped indium oxide (i.e., ITO, In₂O₃: Sn), aluminum-doped zinc oxide (i.e., AZO, ZnO: Al), or fluorine-doped tin oxide (i.e., FTO, SnO₂: F), providing a substantial free-carrier conductivity, while maintaining the wide bandgap transparency to visible photons. Despite this success, the frontier of TCFs for the infrared (IR) spectrum remains in a nascent, exploratory stage. This stands in a stark contrast to the significant and urgent demand for such materials in critical military and civilian sectors. In military applications, the strategic advantage is twofold, i.e., the forward-looking radomes of airborne IR search-and-track (IRST) systems and the windows of missile-borne IR precision guidance systems require a coating that is simultaneously transparent to incident IR radiation (for target acquisition) and electrically conductive. This conductivity provides an effective mechanism for radar cross-section reduction, conferring radar stealth capabilities. In the civilian domain, IR TCFs characterized by a challenging combination of low carrier concentrations and exceptionally high carrier mobility are a key enabling material for the next generation of high-efficiency optical modulators. Such components are essential for expanding the operational bandwidth of optical communications further into the mid- and far-infrared wavelengths. The primary obstacle hindering progress is the perceived incompatibility of infrared transparency and high electrical conductivity. These two properties are governed due to the free-carrier behavior, often leading to a detrimental trade-off: the very carriers required for conductivity tend to reflect IR photons via the free-carrier. Consequently, a comprehensive synergistic mechanism to co-optimize these properties is still unclear, and the fabrication of an IR TCF with ideal, well-rounded performance remains an elusive goal. In the aforementioned application demands, it is imperative to develop a deeper theoretical framework for the synergistic mechanisms governing IR transparency and conductivity, which can, in turn, guide the design and fabrication of superior IR TCFs.

This review firstly elucidates the fundamental solid-state physics governing infrared transparency and electrical conductivity in semiconductor materials. A detailed analysis of the Drude model reveals that the key material parameters affecting the performance are the plasma frequency (ω_p). A high conductivity (σ=ne²τ/m^*) demands a high carrier concentration (n) and a low effective mass (m^*). Conversely, IR transparency requires the plasma frequency (ω_p²=ne²/ε₀m^*) to be lower than the frequency of the incident IR light, which necessitates a low n and a high m^*. This review concludes that resolving this trade-off hinges on the effective modulation of three key variables, i.e., carrier concentration (n), carrier m^*, and carrier scattering frequency (γ). Subsequently, the review systematically introduces the established and emerging methods for manipulating these physical parameters.

To address the inherent conflict between IR transparency and conductivity, this review analyzes two prevailing design strategies currently being pursued in the field. The first strategy retains the use of oxide semiconductors as a host material platform but introduces sophisticated modification methods designed to achieve exceptionally high carrier mobility, while maintaining a carefully optimized, moderate carrier concentration. This approach seeks to maximize conductivity via the mobility term rather than the concentration term, thereby mitigating free-carrier reflection. For N-type semiconductors, a research focus has pivoted from conventional p-block dopants (like Al, Sn, F) to d-block transition metal elements (i.e., Mo, W) and interstitial hydrogen (H). These dopants show a promising potential in minimizing ionized impurity scattering and other defects, thus significantly enhancing carrier mobility. For P-type semiconductors that are notoriously difficult to realize as TCFs due to localized states and large hole effective masses, researchers leverage a valence band modification theory. The hybridization of orbitals at the valence band maximum (VBM) is altered via doping with elements in the same group as the material's anion. This modification aims to increase the VBM's dispersion (i.e., reduce its curvature), which directly translates to a smaller hole effective mass (m_h^*) and a substantial increase in hole mobility. The second strategy represents a paradigm shift away from conventional oxides. It employs a design principle centered on achieving synergy between far-infrared (FIR) transparency and conductivity via increasing the material's high-frequency (optical) dielectric constant (ε_∞). A high ε_∞ effectively screens the free carriers, suppressing the plasma frequency and shifting the plasma edge to longer wavelengths, even at high carrier concentrations. This approach has identified a class of materials with an outstanding potential for IR TCF applications (i.e., heavy metal chalcogenides and their solid solutions, particularly those exhibiting octahedral coordination (i.e., Bi₂Se₃, Bi₂Te₃) via establishing a clear relationship between chemical bonding, crystal structure, and ε_∞. These materials possess highly polarizable bonds that yield the requisite high ε_∞, opening a promising avenue for circumventing the limitations of conventional oxides.

Summary and Prospects

While visible-spectrum TCFs are mature, IR TCFs still face some challenges in reconciling transparency and conductivity. This review outlines two primary synergistic mechanisms that provide foundational design principles for a family of IR TCFs. However, this field remains nascent. Future development will likely be driven by two key thrusts, i.e., 1) The acceleration of material discovery via high-throughput computational screening, which demands the identification of accurate descriptors, and 2) The development of novel low-loss IR TCFs, characterized by low carrier concentrations and high mobility, which requires a deeper mastery of carrier transport mechanisms. These advancements are critical for enabling next-generation IR modulators, optical communications, and sensing technologies.

Key words

infrared / transparent and conducting / electromagnetic shielding

引用本文

吴彬, 段超, 黄易, 高岗, 朱嘉琦. 无机非金属类红外透明导电薄膜的研究进展. 硅酸盐学报, 2026 , 54 (2) : 457 -467 . DOI: 10.14062/j.issn.0454-5648.20250253

Bin WU, Chao DUAN, Yi HUANG, Gang GAO, Jiaqi ZHU. Development o_n Inorganic Non-Metallic Infrared Transparent Conductive Films[J]. Journal of the Chinese Ceramic Society, 2026 , 54 (2) : 457 -467 . DOI: 10.14062/j.issn.0454-5648.20250253

基金

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国家自然科学基金项目(5203000545)

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2026年第54卷第2期

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文章信息

doi: 10.14062/j.issn.0454-5648.20250253

接收时间：2025-04-08
首发时间：2026-10-27
出版时间：2026-02-20

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收稿日期：2025-04-08
修回日期：2025-05-12

基金

国家自然科学基金项目(5203000545)

作者信息

^1．哈尔滨工业大学航天学院，复合材料与结构研究所，哈尔滨 150001

^2．哈尔滨工业大学郑州研究院，郑州 450000

通讯作者:

高岗（1990—），男，副教授

朱嘉琦（1974—），男，教授。

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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20250253

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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