Article(id=1320107653569818863, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107605469544753, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250817, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1762444800000, receivedDateStr=2025-11-07, revisedDate=1763913600000, revisedDateStr=2025-11-24, acceptedDate=null, acceptedDateStr=null, onlineDate=1792667791025, onlineDateStr=2026-10-22, pubDate=1786982400000, pubDateStr=2026-08-18, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792667791025, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792667791025, creator=13701087609, updateTime=1792667791025, updator=13701087609, issue=Issue{id=1320107605469544753, tenantId=1146029695717560320, journalId=1263187385517883426, year='2026', volume='54', issue='9', pageStart='2949', pageEnd='3314', issueExtLink='null', onlineDate='null', pubDate='1789833600000', pubDateStr='2026-09-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792667779556, creator='13701087609', updateTime=1792737576818, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320400356446687492, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107605469544753, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320400356446687493, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107605469544753, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=3254, endPage=3263, ext={EN=ArticleExt(id=1320107653813088496, articleId=1320107653569818863, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Research Progress on Effect of Sintering Aids on Properties of Aluminum Nitride Ceramics, columnId=1263922772401635899, journalTitle=Journal of the Chinese Ceramic Society, columnName=Review, runingTitle=null, highlight=null, articleAbstract=
Aluminum nitride (AlN) ceramics have excellent thermal conductivity, good electrical insulation properties, thermal expansion coefficient matching with silicon materials, and high mechanical strength. AlN ceramics show a wide application potential in high-tech fields such as electronic packaging, circuit substrates, and heat dissipation components. Especially with the rapid development of microelectronic technology to high power and high density integration, AlN ceramics have attracted great attention as an ideal heat dissipation and packaging material. However, AlN as a covalent bond compound, its inherent strong covalent bond, low diffusivity and high melting point make it difficult to achieve densification under conventional sintering conditions, thus restricting the optimization of its microstructure and the improvement of its performance, as well as its application in a wider range of fields. To overcome this bottleneck, the introduction of sintering aids becomes one of the most feasible and effective ways to achieve high density and high performance AlN ceramics. In recent years, researchers have extensively explored different types of sintering aid systems, including oxides, fluorides, composite additives, and other types of sintering aids. Their effects on the sintering behavior, microstructure and properties of AlN ceramics are investigated, obtaining the remarkable results.
In this review, the sintering aids are divided into oxide sintering aids, fluoride sintering aids, composite sintering aids and other types of sintering aids according to the chemical composition. According to the different types of sintering aids, the performance optimization mechanism of AlN ceramics is analyzed. Rare-earth oxides (such as Y2O3, CeO2, etc.) are the most widely used sintering aids. They can react with the inherent Al2O3 oxide layer on the surface of AlN particles to form rare-earth aluminate liquid phase. The liquid phase has a low viscosity and a good wettability at high temperatures, which can promote the rearrangement of AlN particles. The oxygen impurities in the AlN lattice are effectively fixed at the grain boundary in the form of grain boundary phase. The degree of oxygen solid solution in the AlN lattice is significantly reduced, and the phonon scattering in the lattice is reduced. The unique advantage of fluoride sintering aids (such as CaF2, YF3, etc.) is that they can form eutectic liquid phase or react with Al2O3 on the surface of AlN to form volatile fluorine-containing substances during sintering, thus promoting the rearrangement of AlN particles and filling the pores to achieve densification. There is no second phase residue at the grain boundary of AlN after sintering. The composite sintering additives can often reduce the lattice oxygen content through the synergistic effect of each component, i.e., one of which focuses on removing oxygen impurities and the another focuses on forming an effective liquid phase at a lower temperature to promote densification. AlN ceramics can form a liquid phase, which is more conducive to sintering at a lower temperature, and achieve more fine regulation of grain microstructure. Other types of sintering aids are mainly represented by carbides or rare-earth hydrides, which also promote densification via forming a low melting point liquid phase, and remove oxygen impurities from the AlN lattice and fix them to the grain boundaries through chemical reactions. The mechanical and thermal properties of AlN ceramics are improved to achieve the purpose of obtaining AlN ceramics with a high strength and a high thermal conductivity.
Summary and Prospects The comparison of the effect of different sintering aids on the properties of aluminum nitride ceramics indicates that the oxide sintering aid has the most significant effect on the improvement of thermal conductivity and the most mature application technology. However, the sintering temperature required is relatively high, and the second phase of grain boundary generates, affecting the high-temperature performance. It is more suitable for high performance electronic packaging substrate materials. Fluoride sintering aids can significantly reduce the sintering temperature and directly deoxygenate through gas phase volatilization. There is no residual second phase in the grain boundary, but the high temperature volatiles will corrode the sintering equipment, and the sintering process is difficult to control, which is not suitable for industrial production. The composite sintering aid can further reduce the sintering temperature or optimize the grain boundary phase through the synergistic effect, but the formula design is more complicated, and the mechanism of action still needs to be further explored, which is suitable for the pursuit of extreme performance or specific functions. The application cost of other sintering aids is low, but the research is less, the universality is low, and it is still in the experimental research stage.
In the future, advanced characterization techniques can be used to reveal the mechanism of sintering additives, the migration path of oxygen impurities and the dynamic evolution process of grain boundary phase in the sintering process, which can provide a theoretical support for the design of sintering additive system. Nano- or submicron-sized sintering aids are obtained via optimizing the preparation process of sintering aids. Therefore, the utilization efficiency of sintering aids is improved, which is helpful to achieve densification at a lower addition amount. In addition, it can also be devoted to the development of new sintering additives, such as low rare-earth, no rare-earth or no residual sintering additive system, which can effectively reduce the residual impurities at the grain boundary and purify the grain boundary structure. A new type of nitrogen oxide grain boundary phase is constructed via accurately controlling the sintering atmosphere and the proportion of elements in the sintering aid. It can react with Al2O3 to form a rare-earth aluminum nitrogen oxide with a higher thermal conductivity and a better electrical insulation or JEM phase and other crystalline phases to replace the low thermal conductivity aluminate glass phase.
, authors=Yuanmeng LI
1, Xiao TIAN
1, 2, Qun WANG
3, Mingyue JI
1, Yuxin LI
1, Peng WANG
1, Mohan LI
1, authorsList=Yuanmeng LI, Xiao TIAN, Qun WANG, Mingyue JI, Yuxin LI, Peng WANG, Mohan LI, authorCompany=null, correspAuthors=Xiao TIAN, authorNote=
, correspAuthorsNote=
{TIAN} Xiao (1972-), female, Ph.D., Professor.
E-mail:
nsdtx@126.com, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1320107654123466993, articleId=1320107653569818863, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=烧结助剂对氮化铝陶瓷性能影响的研究进展, columnId=1263922774356181565, journalTitle=硅酸盐学报, columnName=综合评述, runingTitle=null, highlight=null, articleAbstract=
氮化铝(AlN)陶瓷因其具有优异的导热性、电绝缘性以及良好的机械性能,在电子封装、基板、散热等领域具有广阔的应用前景。然而,AlN固有的强共价键、低扩散性等使其难以致密化烧结,严重制约了其性能发挥与应用。添加烧结助剂是克服这一瓶颈、实现高性能AlN陶瓷制备的最有效途径之一。本文从烧结助剂的种类出发,主要梳理了近年来不同种类烧结助剂在优化AlN陶瓷性能方面的研究,分析其作用机理和对AlN陶瓷性能的影响,并对未来AlN陶瓷烧结助剂的研究进行了展望。
, authors=李圆梦
1, 田晓
1, 2, 王群
3, 纪铭悦
1, 李雨欣
1, 王棚
1, 李沫函
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, correspAuthorsNote=
田晓(1972—),女,博士,教授。
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