硅酸盐学报

超宽禁带金刚石材料光电性质与应用进展

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程祥祥 ¹ , 康俊杰 ² , 张万 ¹ , 张逸韵 ² , 王永杰 ¹^,³ , 朱嘉琦 ³

硅酸盐学报 | 综合评述 2026,54(7): 2508-2523

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硅酸盐学报 |综合评述 2026 , 54 (7) : 2508 -2523

超宽禁带金刚石材料光电性质与应用进展

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程祥祥¹, 康俊杰², 张万¹, 张逸韵², 王永杰¹^,³, 朱嘉琦³

作者信息

^1．哈尔滨工业大学深圳校区，广东深圳 518055

^2．中国科学院半导体研究所，北京 100083

^3．哈尔滨工业大学航天学院，哈尔滨 150001

通讯作者:

王永杰（1988—），男，博士，教授；

张逸韵（1986—），男，博士，研究员。

作者简介:

程祥祥（2002—），男，硕士研究生；

康俊杰（1988—），男，博士，研究员。

Advances on Photoelectric Properties and Applications of Ultra-Wide Bandgap Diamond Materials

Xiangxiang CHENG¹, Junjie KANG², Wan ZHANG¹, Yiyun ZHANG², Yongjie WANG¹^,³, Jiaqi ZHU³

Affiliations

^1.Harbin Institute of Technology， Shenzhen, Shengzhen 518055, Guangzhou, China

^2.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

^3.School of Astronautics Harbin Institute of Technology, Harbin 150001, China

Corresponding Author:

WANG Yongjie (1988-), male, Ph.D., Professor. E-mail: yjwang@hit.edu.cn;

ZHANG Yiyun (1986-), male, Ph.D., Professor. yyzhang@semi.ac.cn

CHENG Xiangxiang (2002-), male, Master candidate. E-mail: n18779688@126.com;

KANG Junjie (1988-), male, Ph.D., Professor. kangjunjie@semi.ac.cn

出版时间: 2026-04-09 doi: 10.14062/j.issn.0454-5648.20250446

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摘要

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金刚石材料因具有超宽禁带的能带结构，具备了高击穿场强、高载流子迁移速度、强抗辐射能力等优异的光电性能，在高功率、高能效、高频和恶劣环境下的光电设备领域应用前景广阔，其合成技术与掺杂技术的发展与应用密切相关。金刚石作为新兴的光电材料，对其光电性质与应用进行综述，对于推动其进一步发展具有重要的意义。本文简要介绍了金刚石及其合成方法，并探讨了合成技术对光电应用的重要意义，着重阐释了金刚石的光电性质并对其掺杂和色心作了介绍，总结了超宽禁带金刚石在辐射探测、高功率激光、电子器件领域的应用进展，最后对金刚石光电应用的发展进行了展望。

关键词

金刚石 / 光电性质 / 掺杂 / 探测器 / 激光器 / 电子器件

Abstract

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The advancement in optical and electronic technologies plays a pivotal role in industrial production and scientific research, significantly driving the development of productivity, societal progress, and the improvement of human-being life. Diamond with its ultra-wide bandgap structure exhibits exceptional optoelectronic properties, such as high breakdown field, high carrier mobility, and intense radiation resistance, making it a promising material for high-power, high-efficiency, high-frequency, and harsh-environment optoelectronic devices. The development and application of synthetic and doping technologies are closely intertwined with its practical utilization.

The existing progress is achieved in the application of lasers, radiant detectors, and electronic devices. In the field of high-power Raman and Brillouin lasers, conventional Raman gain media (i.e., gases, crystals, and fibers) offer broad spectral transmission ranges, but suffer from a low thermal conductivity, leading to heat dissipate challenges under high-power operation and causing the degradation of beam quality. In contrast, diamond possesses the maximum thermal conductivity among crystalline materials, along with the largest Raman frequency shift, exceptionally high Raman gain coefficient, and remarkable Brillouin gain and frequency shift. These properties position diamond as an ideal candidate for high-power Brillouin and Raman lasers, enabling the maintenance of high beam quality under intense operating conditions, thereby representing a critical direction for advancing high-power laser technology. In radiation detection, conventional silicon detectors are incapable of withstanding high-intensity irradiation. In extreme environments, detection materials must exhibit superior radiation resistance, higher detection sensitivity, and broader detection ranges. Diamond, characterized by its ultra-wide bandgap, high carrier mobility, exceptional stability, and low dielectric constant, emerges as an ideal material. Diamond-based detectors can operate under harsh conditions such as high radiation intensity, high injection rates, and elevated temperatures, serving as key components in detection systems and providing novel solutions for extreme-environment applications. In the electronics sector, the exploration of post-Moore-era semiconductors becomes a research hotspot. Diamond, with its ultra-wide bandgap, high carrier saturation velocity, superior thermal conductivity, high carrier mobility, and high breakdown field strength, demonstrates a promising potential in electronic devices. Research on diamond-based diodes and transistors becomes popular.

As an emerging optoelectronic material, a comprehensive review of optoelectronic properties and applications of diamond holds a significant importance for its further development. This review briefly introduces diamond and its synthesis methods, discusses the critical role of synthetic technologies in optoelectronic applications, elaborates on the optoelectronic properties of diamond, with an overview of doping and color center, summarizes recent advances on ultra-wide bandgap diamond for radiation detect, high-power lasers, and electronic devices, and finally provides an outlook on the diamond-based optoelectronic applications.

Summary and prospects

Diamond is a novel optoelectronic material with a tremendous application potential, injecting new vitality and opportunities into the development of optoelectronic technology. In laser technology, diamond exhibits excellent gain parameters, stability, and thermal properties, offering outstanding advantages in high-power laser applications. The existing applications in high-power Raman and Brillouin lasers yield remarkable results. Doped diamond serves as a probe material with superior performance parameters and high irradiation resistance, enabling stable high-precision detection and extending detector lifespans in harsh environments. In the UV and deep UV wavelength bands, diamond outperforms predecessor materials (e.g. silicon) in terms of stability and durability.

Diamond has attracted recent attention in the semiconductor field during the post-Moore era, demonstrating an exceptional application potential in electronic devices. Research on diamond Schottky barrier diode (SBD) and diamond p-n junction diode becomes popular, with a significant progress achieved in breakdown voltage, switching time, on-resistance, and other performance parameters.

Therefore, the following outlooks are described for the utilization of optoelectronic properties of diamond. 1) The material quality is crucial for its optoelectronic applications. However, the synthesis technology for high-quality, low-defect diamond remains immature. Future research must focus on reducing the synthesis costs of optical-grade and electronic-grade diamond with an enhanced growth rate. 2) Despite diamond possesses excellent thermal properties, thermal lensing effects still occur during high-power laser operation. The in-depth studies of heat sources and heat distribution within crystals are necessary to achieve higher power and conversion efficiency in diamond lasers. 3) Elemental doping is a critical challenge for diamond-based devices, especially difficult for n-type doping. Future research should conduct further mechanistic and experimental studies on n-type doping of diamond. 4) Most diamond electronic devices are still in the research stage, with considerable progress needed before large-scale, practical applications can be realized, urgently requiring more extensive theoretical and experimental efforts.

Key words

diamond / optoelectronic properties / doping / detectors / lasers / electronic devices

引用本文

程祥祥, 康俊杰, 张万, 张逸韵, 王永杰, 朱嘉琦. 超宽禁带金刚石材料光电性质与应用进展. 硅酸盐学报, 2026 , 54 (7) : 2508 -2523 . DOI: 10.14062/j.issn.0454-5648.20250446

Xiangxiang CHENG, Junjie KANG, Wan ZHANG, Yiyun ZHANG, Yongjie WANG, Jiaqi ZHU. Advances on Photoelectric Properties and Applications of Ultra-Wide Bandgap Diamond Materials[J]. Journal of the Chinese Ceramic Society, 2026 , 54 (7) : 2508 -2523 . DOI: 10.14062/j.issn.0454-5648.20250446

基金

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深圳市科技计划(JCYJ20241202123733043)
国家重点研发计划(2024YFF0508500)

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2026年第54卷第7期

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文章信息

doi: 10.14062/j.issn.0454-5648.20250446

接收时间：2025-06-10
首发时间：2026-10-22
出版时间：2026-04-09

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出版历史

收稿日期：2025-06-10
修回日期：2025-07-19

基金

深圳市科技计划(JCYJ20241202123733043)

国家重点研发计划(2024YFF0508500)

作者信息

^1．哈尔滨工业大学深圳校区，广东深圳 518055

^2．中国科学院半导体研究所，北京 100083

^3．哈尔滨工业大学航天学院，哈尔滨 150001

通讯作者:

王永杰（1988—），男，博士，教授；

张逸韵（1986—），男，博士，研究员。

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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20250446

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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