Article(id=1320107554831712964, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107530261479891, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250468, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1747670400000, receivedDateStr=2025-05-20, revisedDate=1750003200000, revisedDateStr=2025-06-16, acceptedDate=null, acceptedDateStr=null, onlineDate=1792667767483, onlineDateStr=2026-10-22, pubDate=1775577600000, pubDateStr=2026-04-08, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792667767483, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792667767483, creator=13701087609, updateTime=1792667767483, updator=13701087609, issue=Issue{id=1320107530261479891, tenantId=1146029695717560320, journalId=1263187385517883426, year='2026', volume='54', issue='7', pageStart='2171', pageEnd='2576', issueExtLink='null', onlineDate='null', pubDate='1784476800000', pubDateStr='2026-07-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792667761625, creator='13701087609', updateTime=1792720444956, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320328500238725499, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107530261479891, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320328500238725500, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320107530261479891, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=2424, endPage=2430, ext={EN=ArticleExt(id=1320107555037233861, articleId=1320107554831712964, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Modification of Buried Interfaces Through EDTA for Enhanced Efficiency and Stability in Inorganic Perovskite Solar Cells, columnId=1263922769897599102, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Articles, runingTitle=null, highlight=null, articleAbstract=
Introduction

The poor interface characteristics between inorganic perovskite and the electron transport layer limit the improvement of the photovoltaic performance of inorganic perovskite solar cells (IPSCs). In this paper, the buried interface was treated with ethylenediaminetetraacetic acid (EDTA), and four carboxyl groups of EDTA reacted with the hydroxyl groups of SnO2 to improve the interface characteristics, enhance the crystallization quality of the inorganic perovskite film, reduce the defect state density and suppress non-radiative recombination. Finally, the n-i-p type device with the composition of CsPbI2.25Br0.75 prepared in air achieved a power conversion efficiency (PCE) of 18.84% and excellent stability.

Method

The In-doped Tin Oxide (ITO) glass substrate was ultrasonically cleaned in glass cleaner, deionized water and isopropyl alcohol solution for 20 min, respectively. Before the use, the FTO substrate was treated with ultraviolet ozone for 20 min. Then, 12% SnO2 nanosolution was diluted for three times with water and spin-coated on the surface of ozone-treated ITO glass at 3000 r/min for 30 s, followed by annealing in air at 150 ℃ for 30 min. After cooling to room temperature, 0.1 mg/mL EDTA (H2O) was spin-coated on the surface of SnO2 and annealed at 100 ℃ for 10 min. The preparation of perovskite precursor solution and thin film was consistent with the that from previously reported literature[30], except that the preparation environment of the perovskite film was changed in air with a humidity of < 25%. 40 μL of Spiro-OMeTAD was spin-coated on the surface of perovskite film at 3000 r/min for 30 s as a hole transport layer. Finally, 80 nm of Au was evaporated on the surface of the hole transport layer by evaporation equipment as a metal electrode.

Results and discussion

The pinholes on the surface of the perovskite in the Target group are significantly reduced, corresponding to a lower defect state density and a superior photovoltaic performance. The PL intensity of the Target group films is significantly greater than that of the Control group, indicating that non-radiative recombination is suppressed after EDTA treatment. After EDTA treatment, the average carrier lifetime increases from 75.10 ns to 113.31 ns. The optimum PCE is increased from 16.68% of the control device to 18.84%. The current density is verified by the external quantum efficiency test of the solar cell. The integral current density increases from 18.42 mA/cm2 to 18.78 mA/cm2 due to the improvement of the interface contact characteristics between SnO2 and perovskite by EDTA. The steady-state output power curve of the best PCE device of the target device is negligible within 280 s. Two types of devices are placed in an environment at 25 ℃ and a humidity of 20%-30%. After 250 h, the control device retains 73.39% of its initial PCE, while the Target device maintains 81.41%. The improvement in stability is attributed to the EDTA enhancement of the interface contact between SnO2 and the inorganic perovskite, suppressing non-radiative recombination at the interface and reducing the defect state density.

Conclusions

The EDTA was used to modify the buried interface. The four carboxyl groups of EDTA reacted with the hydroxyl groups of the SnO2 layer, improving the interface contact characteristics between SnO2 and perovskite and facilitating the efficient extraction of electrons. Non-radiative recombination at the interface was suppressed and the defect state density was reduced. Ultimately, a n-i-p type device with a composition of CsPbI2.25Br0.75 prepared in air achieved a PCE of 18.84%. This could provide a scientific approach for advancing the practical application of IPSCs.

, authors=Jingping GAO, Yuelin WANG, Sanlong WANG, authorsList=Jingping GAO, Yuelin WANG, Sanlong WANG, authorCompany=null, correspAuthors=Sanlong WANG, authorNote=

GAO Jingping (2002-), male, Master. E-mail:

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{WANG} Sanlong (1992-), male, Ph.D., Lecturer. E-mail:
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无机钙钛矿与电子传输层之间较差的界面特性限制了无机钙钛矿太阳电池光伏性能的提升。采用乙二胺四乙酸(EDTA)对埋底界面进行处理,利用EDTA四个羧基基团与SnO2的羟基相互反应,改善界面特性,提升无机钙钛矿薄膜结晶质量,降低缺陷态密度并抑制非辐射复合。最终基于空气制备的组分为CsPbI2.25Br0.75的n-i-p型器件实现了18.84%的功率转换效率且稳定性优异。

, authors=高京萍, 王跃霖, 王三龙, authorsList=高京萍, 王跃霖, 王三龙, authorCompany=null, correspAuthors=王三龙, authorNote=

高京萍(2002—),男,硕士。

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王三龙(1992—),男,博士,讲师。
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EDTA改性埋底界面实现高效稳定的无机钙钛矿太阳电池
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高京萍 , 王跃霖 , 王三龙
硅酸盐学报 | 研究论文 2026,54(7): 2424-2430
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硅酸盐学报 |研究论文 2026 , 54 (7) : 2424 -2430
EDTA改性埋底界面实现高效稳定的无机钙钛矿太阳电池
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高京萍 , 王跃霖, 王三龙
作者信息
  • 东北电力大学电气工程学院,现代电力系统仿真控制与绿色电能新技术教育部重点实验室,吉林 吉林 132012
通讯作者:
王三龙(1992—),男,博士,讲师。
作者简介:

高京萍(2002—),男,硕士。

Modification of Buried Interfaces Through EDTA for Enhanced Efficiency and Stability in Inorganic Perovskite Solar Cells
Jingping GAO , Yuelin WANG, Sanlong WANG
Affiliations
  • Key Laboratory of Modern Power System Simulation and Control and New Green Energy Technology of Ministry of Education, School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, Jilin, China
  • Corresponding Author:
    {WANG} Sanlong (1992-), male, Ph.D., Lecturer. E-mail:

    GAO Jingping (2002-), male, Master. E-mail:

出版时间: 2026-04-08 doi: 10.14062/j.issn.0454-5648.20250468
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无机钙钛矿与电子传输层之间较差的界面特性限制了无机钙钛矿太阳电池光伏性能的提升。采用乙二胺四乙酸(EDTA)对埋底界面进行处理,利用EDTA四个羧基基团与SnO2的羟基相互反应,改善界面特性,提升无机钙钛矿薄膜结晶质量,降低缺陷态密度并抑制非辐射复合。最终基于空气制备的组分为CsPbI2.25Br0.75的n-i-p型器件实现了18.84%的功率转换效率且稳定性优异。

无机钙钛矿  /  界面特性  /  结晶质量  /  缺陷态密度  /  非辐射复合
Introduction

The poor interface characteristics between inorganic perovskite and the electron transport layer limit the improvement of the photovoltaic performance of inorganic perovskite solar cells (IPSCs). In this paper, the buried interface was treated with ethylenediaminetetraacetic acid (EDTA), and four carboxyl groups of EDTA reacted with the hydroxyl groups of SnO2 to improve the interface characteristics, enhance the crystallization quality of the inorganic perovskite film, reduce the defect state density and suppress non-radiative recombination. Finally, the n-i-p type device with the composition of CsPbI2.25Br0.75 prepared in air achieved a power conversion efficiency (PCE) of 18.84% and excellent stability.

Method

The In-doped Tin Oxide (ITO) glass substrate was ultrasonically cleaned in glass cleaner, deionized water and isopropyl alcohol solution for 20 min, respectively. Before the use, the FTO substrate was treated with ultraviolet ozone for 20 min. Then, 12% SnO2 nanosolution was diluted for three times with water and spin-coated on the surface of ozone-treated ITO glass at 3000 r/min for 30 s, followed by annealing in air at 150 ℃ for 30 min. After cooling to room temperature, 0.1 mg/mL EDTA (H2O) was spin-coated on the surface of SnO2 and annealed at 100 ℃ for 10 min. The preparation of perovskite precursor solution and thin film was consistent with the that from previously reported literature[30], except that the preparation environment of the perovskite film was changed in air with a humidity of < 25%. 40 μL of Spiro-OMeTAD was spin-coated on the surface of perovskite film at 3000 r/min for 30 s as a hole transport layer. Finally, 80 nm of Au was evaporated on the surface of the hole transport layer by evaporation equipment as a metal electrode.

Results and discussion

The pinholes on the surface of the perovskite in the Target group are significantly reduced, corresponding to a lower defect state density and a superior photovoltaic performance. The PL intensity of the Target group films is significantly greater than that of the Control group, indicating that non-radiative recombination is suppressed after EDTA treatment. After EDTA treatment, the average carrier lifetime increases from 75.10 ns to 113.31 ns. The optimum PCE is increased from 16.68% of the control device to 18.84%. The current density is verified by the external quantum efficiency test of the solar cell. The integral current density increases from 18.42 mA/cm2 to 18.78 mA/cm2 due to the improvement of the interface contact characteristics between SnO2 and perovskite by EDTA. The steady-state output power curve of the best PCE device of the target device is negligible within 280 s. Two types of devices are placed in an environment at 25 ℃ and a humidity of 20%-30%. After 250 h, the control device retains 73.39% of its initial PCE, while the Target device maintains 81.41%. The improvement in stability is attributed to the EDTA enhancement of the interface contact between SnO2 and the inorganic perovskite, suppressing non-radiative recombination at the interface and reducing the defect state density.

Conclusions

The EDTA was used to modify the buried interface. The four carboxyl groups of EDTA reacted with the hydroxyl groups of the SnO2 layer, improving the interface contact characteristics between SnO2 and perovskite and facilitating the efficient extraction of electrons. Non-radiative recombination at the interface was suppressed and the defect state density was reduced. Ultimately, a n-i-p type device with a composition of CsPbI2.25Br0.75 prepared in air achieved a PCE of 18.84%. This could provide a scientific approach for advancing the practical application of IPSCs.

inorganic perovskite  /  interface characteristics  /  crystallization quality  /  defect state density  /  non-radiative recombination
高京萍, 王跃霖, 王三龙. EDTA改性埋底界面实现高效稳定的无机钙钛矿太阳电池. 硅酸盐学报, 2026 , 54 (7) : 2424 -2430 . DOI: 10.14062/j.issn.0454-5648.20250468
Jingping GAO, Yuelin WANG, Sanlong WANG. Modification of Buried Interfaces Through EDTA for Enhanced Efficiency and Stability in Inorganic Perovskite Solar Cells[J]. Journal of the Chinese Ceramic Society, 2026 , 54 (7) : 2424 -2430 . DOI: 10.14062/j.issn.0454-5648.20250468
  • 吉林省科技厅项目(YDZJ202501ZYTS397)
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doi: 10.14062/j.issn.0454-5648.20250468
  • 接收时间:2025-05-20
  • 首发时间:2026-10-22
  • 出版时间:2026-04-08
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  • 收稿日期:2025-05-20
  • 修回日期:2025-06-16
基金
吉林省科技厅项目(YDZJ202501ZYTS397)
作者信息
    东北电力大学电气工程学院,现代电力系统仿真控制与绿色电能新技术教育部重点实验室,吉林 吉林 132012

通讯作者:

王三龙(1992—),男,博士,讲师。
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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20250468
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2种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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