Article(id=1320090145915781214, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20240661, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1729526400000, receivedDateStr=2024-10-22, revisedDate=1730908800000, revisedDateStr=2024-11-07, acceptedDate=null, acceptedDateStr=null, onlineDate=1792663616874, onlineDateStr=2026-10-22, pubDate=1745078400000, pubDateStr=2025-04-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792663616874, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792663616874, creator=13701087609, updateTime=1792663616874, updator=13701087609, issue=Issue{id=1320090116236882876, tenantId=1146029695717560320, journalId=1263187385517883426, year='2025', volume='53', issue='4', pageStart='733', pageEnd='1030', issueExtLink='null', onlineDate='null', pubDate='1745078400000', pubDateStr='2025-04-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792663609799, creator='13701087609', updateTime=1792663788359, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320090865276670951, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320090865276670952, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=958, endPage=964, ext={EN=ArticleExt(id=1320090146112913503, articleId=1320090145915781214, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=HfO
2/Al
2O
3 X-ray Multilayer Prepared of by Atomic Layer Deposition, columnId=1319726165087077079, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Article, runingTitle=null, highlight=null, articleAbstract=
Introduction X-ray multilayer enables an efficient reflection of X-rays in specific wavelength, serving as an important optics for obtaining monochromatic X-ray. The period thickness of multilayers typically falls within a nano-scale, and it is generally composed of two kinds of thin films alternately due to the short wavelength of X-ray. The multilayer can realize a high reflection of specific wavelength X-ray based on the Bragg diffraction, yielding a pure monochromatic X-ray. Compared to crystal monochromators, the period of multilayer can be adjusted readily, and the multilayer can be suitable for X-rays with different energies. The energy bandwidth of reflected X-ray obtained by the multilayer is 1-2 orders of magnitude broader than that of the crystals, thus providing a higher photon flux. At present, X-ray multilayer is widely used in synchrotron radiation for applications such as X-ray imaging, and X-ray small-angle scattering. According to the working principle of X-ray mutlilayer, the period of multilayer is only a few nanometers for the efficient X-ray reflection at a larger grazing angle due to the short wavelength of X-ray. Therefore, the coating method with a high precision thickness control is essential to prepare X-ray multilayer. Magnetron sputtering is the primary preparation method for X-ray multilayers, although achieving a high precision thickness control remains a challenge. Atomic layer deposition (ALD) method can realize uniform growth of single atomic layer thickness film on substrate and the film thickness control is extremely accurate because of the special film growth process. The ALD method has unique advantages in the preparation of small-period multilayer. It is identified that HfO2/Al2O3 is an effective material pair for X-ray multilayer at a wavelength of 0.154 nm and the X-ray reflectivity is acceptable.
Methods To further investigate the properties of HfO2/Al2O3 X-ray multilayer prepared by the ALD and explore its application, HfO2/Al2O3 X-ray multilayer with a period of 3.8 nm and a period number of 60 was prepared by the ALD method. The surface 3D profile of the multilayer was obtained by a model ICON2-SYS atomic force microscope (AFM, Bruker Co., Germany), and the surface roughness of the multilayer was analyzed by a software named NanoScope Analysis. The microstructure of multilayer was determined by a model Talos F200s G2 transmission electron microscope (TEM, Thermo Fisher Scientific Co., USA) with a software named Digital Micrograph. The X-ray reflectivity of the multilayer was measured by a model D8 Discover X-ray diffractometer (XRD, Bruker Co., Germany) at X-ray wavelength of 0.154 nm. A software named IMD was used to fit the measured reflectance data. The fitting was based on a two-layer model, and the structure parameters of multilayer was obtained, including period and duty cycle. The multilayer was also analyzed by a modle AL-Y3500 diffractometer (Dandong Aolong Ray Instrument Group Co., Ltd., China). Before the installation of multilayer, the X-rays emitted from the source were directly illuminated on the sample by a collimator. After the installation of multilayer, the X-rays emitted from the ray source were firstly reflected by the multilayer and then irradiated on the sample. The diffraction patterns before and after installing multilayer were analyzed. This work consisted of three main parts. Firstly, a software named Fluent was used to simulate the gas flow distribution according to the structure of ALD equipment chamber. The results show that the gas flow rate is uniform, indicating that the chamber is suitable for preparing a film with uniform thickness. Secondly, HfO2/Al2O3 multilayer is prepared by the ALD method, and the surface roughness, period thickness uniformity and X-ray reflectivity are characterized. Finally, the multilayer is installed on the X-ray diffractometer to test the diffraction patterns of a silicon sample. The results show that the quality of the diffraction patterns is improved after the installation of the multilayer.
Results and discussion The characterization results show that the surface root-mean-square roughness of the multilayer is 0.77 nm, the maximum deviation of the period is 0.11 nm and the maximum X-ray (i.e., 0.154 nm) reflectivity of the multilayer is approximately 45%. The multilayer is in an amorphous state, and the interface between two layers is clear and sharp. The XRD pattern of Si powder sample is obtained without and with the HfO2/Al2O3 multilayer in X-ray diffractometer. The results indicate that the background intensity of the pattern with multilayer reduces, and no diffraction peaks of other X-ray appear. The reason is that the X-rays irradiated on the sample are composed of high-intensity Cu characteristic X-rays, other stray energy X-rays and low-intensity bremsstrahring radiation when the multilayer is not installed. After the multilayer is installed, the pure Cu kα characteristic X-rays are irradiated on the sample and thus there is basically no interference peak.
Conclusions This work investigated the characteristics of HfO2/Al2O3 multilayer prepared by the ALD method and explored its application in X-ray diffractometers. The results showed that HfO2 and Al2O3 layers were amorphous with a maximum X-ray (0.154 nm) reflectivity of approximately 45%. The quality of the diffraction patterns after the installation of the multilayer was improved, demonstrating a potential application of the HfO2/Al2O3 multilayer.
, authors=Huibin ZHAO, Yanli LI, He ZHANG, Geng NIU, Li HAN, authorsList=Huibin ZHAO, Yanli LI, He ZHANG, Geng NIU, Li HAN, authorCompany=null, correspAuthors=Yanli LI, Geng NIU, authorNote=
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2/Al
2O
3 X射线多层膜, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=
X射线多层膜可实现特定波长X射线的高效反射，是获得单色X射线的一种重要元件。由于X射线的波长短，多层膜的周期厚度通常为纳米量级，高精度膜厚控制的原子层沉积（ALD）法是制备X射线多层膜的一种有效方法。对于常用的0.154 nm X射线，HfO2/Al2O3是一种有效的多层膜材料组合，为进一步研究ALD法制备的HfO2/Al2O3 X射线多层膜的特性，探索多层膜的应用，利用ALD法制备了周期厚度3.8 nm、周期数60的HfO2/Al2O3多层膜，表征结果显示：多层膜为非晶薄膜，表面粗糙度为0.77 nm，膜层间的界面清晰，周期厚度的最大偏差为0.11 nm，多层膜的X射线（0.154 nm）最高反射率约为45%。将HfO2/Al2O3多层膜应用于X射线衍射仪中，测试同一硅粉样品，测试结果显示：安装多层膜后，衍射谱的背底强度降低，且未见杂峰，展现出HfO2/Al2O3多层膜的应用潜力。
, authors=赵慧斌, 李艳丽, 张贺, 牛耕, 韩立, authorsList=赵慧斌, 李艳丽, 张贺, 牛耕, 韩立, authorCompany=null, correspAuthors=李艳丽, 牛耕, authorNote=
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李艳丽（1988—），女，博士，助理研究员；
牛耕（1990—），男，博士，助理研究员。
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ZHAO Huibin (1980-), male, Ph.D., Associate Professor. E-mail: zhaohb@mail.iee.ac.cn
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赵慧斌（1980—），男，博士，副研究员。
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赵慧斌（1980—），男，博士，副研究员。
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