Article(id=1319726308976874040, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319726260922728931, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250364, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1746460800000, receivedDateStr=2025-05-06, revisedDate=1748966400000, revisedDateStr=2025-06-04, acceptedDate=null, acceptedDateStr=null, onlineDate=1792576871388, onlineDateStr=2026-10-21, pubDate=1758297600000, pubDateStr=2025-09-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792576871388, onlineIssueDateStr=2026-10-21, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792576871388, creator=13701087609, updateTime=1792576871388, updator=13701087609, issue=Issue{id=1319726260922728931, tenantId=1146029695717560320, journalId=1263187385517883426, year='2025', volume='53', issue='9', pageStart='2419', pageEnd='2752', issueExtLink='null', onlineDate='null', pubDate='1758297600000', pubDateStr='2025-09-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792576859932, creator='13701087609', updateTime=1792577418267, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1319728602791395512, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319726260922728931, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1319728602791395513, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319726260922728931, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=2518, endPage=2536, ext={EN=ArticleExt(id=1319726309148840505, articleId=1319726308976874040, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Manipulations on Dielectric and Ferroelectric Properties of HfO
2-Based Films and Related Information Storage Devices, columnId=1321946063527858339, journalTitle=Journal of the Chinese Ceramic Society, columnName=Special Issue on Ferroelectric Thin Films and Devices Toward Next-Generation Information Technology Applications—Review, runingTitle=null, highlight=null, articleAbstract=
The ever-increasing demands for high-performance computing and data storage have made the development of high-density, high-speed, and highly reliable memory technologies a critical challenge in contemporary industrial progresses. The innovative research and development of memory materials have become particularly crucial. HfO2-based thin films, as a key dielectric material, have not only been successfully applied in high-dielectric capacitors for conventional dynamic random-access memory (DRAM), but the discovery of their ferroelectric properties has also provided an ideal material choice for ferroelectric capacitors in emerging ferroelectric random-access memory (FeRAM). Particularly, they can be used to construct new electronic devices of ferroelectric field effect transistor (FeFET, utilizing a ferroelectric thin film as the gate dielectric) and ferroelectric tunnel junction (FTJ, using an ultrathin ferroelectric film as the tunneling barrier) for memristors as artificial synapses for neuromorphic computing.
This review systematically elucidates the fundamental phase structures of HfO2 materials in both bulk and thin-film forms, with a focused analysis on dielectric and ferroelectric performance manipulation strategies for HfO2-based thin films. In terms of dielectric characteristics, we highlight effective methods for achieving high-dielectric-constant (high-κ) morphotropic phase boundary (MPB) structures through phase regulation, along with an in-depth exploration of technical approaches to effectively reduce leakage current density. Regarding ferroelectric properties, this review summarizes optimization strategies for enhancing ferroelectric polarization, improving endurance characteristics, and reducing coercive field. Finally, we provide a systematic overview of the specific applications of HfO2-based dielectric and ferroelectric thin films in relevant information devices, including DRAM, FeRAM, FeFET and FTJ.
Summary and prospects HfO2-based materials have been successfully commercialized applications for DRAM capacitors and field-effect transistor gate dielectrics due to their excellent CMOS compatibility, superior thermochemical stability, wide bandgap, and high dielectric constant. The recent discovery of their ferroelectric properties has further expanded the application prospects of HfO2-based thin films in information storage technologies.
1) Dielectric properties: HfO2-based thin films with MPB structures located at the phase boundary between orthorhombic (o) and tetragonal (t) phases, exhibit high dielectric constants under relatively low electric fields. Precise control of phase composition is crucial for realizing MPB structures, with approaches including: superlattice design, elemental doping, oxygen vacancy and carbon defect engineering, annealing process optimization, grain size control, and electrode material selection, and so on.
2) Ferroelectric properties: HfO2-based thin films demonstrate good ferroelectricity especially at a thickness below 10 nm. However, relatively poor endurance and high coercive field remain major bottlenecks for practical applications. Researchers have developed various improvement strategies. Introducing oxide interlayer, optimizing domain switching ratio, elemental doping, and adopting oxide electrode can significantly enhance endurance; While superlattice design, elemental doping, and new ferroelectric phase engineering can effectively reduce coercive fields.
3) Devices: HfO2-based high-κ dielectrics have been utilized in commercial DRAM capacitors. However, with continuously shrinking feature size, further increasing dielectric constant while maintaining low leakage current require deeper investigation. Successful 3D trench deposition of HfO2-based ferroelectric thin films has enabled high-density integration of FeRAMs with advantages including large polarization, fast switching, and good endurance. Novel device architectures like FeFETs and FTJs demonstrate great potential in neuromorphic computing through nonvolatile multi-state manipulation. However, challenges remain in FeFET retention characteristics and FTJ endurance. Future efforts should focus on improving thin-film quality and scaling up from single-cell to array-level applications, thereby fully realizing the potential of HfO2-based FeFETs and FTJs.
, authors=Xinzhe DU, Yuanzhenzi LU, Jiachen LI, Yaoxin LI, Shengchun SHEN, Yuewei YIN, Xiaoguang LI, authorsList=Xinzhe DU, Yuanzhenzi LU, Jiachen LI, Yaoxin LI, Shengchun SHEN, Yuewei YIN, Xiaoguang LI, authorCompany=null, correspAuthors=Xiaoguang LI, authorNote=
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2基薄膜的介电、铁电性能调控及相关信息存储器, columnId=1321946063729184932, journalTitle=硅酸盐学报, columnName=面向新一代信息技术应用的铁电薄膜与器件专题—综合评述, runingTitle=null, highlight=null, articleAbstract=
随着高性能计算和大数据存储需求的迅猛增长，开发高密度、高速度且可靠的存储技术已成为当前半导体产业发展的关键挑战。在此背景下，存储器介质材料的创新研发具有重要的战略意义。HfO2基薄膜作为一种关键介质材料，不仅已成功应用于传统动态随机存储器（DRAM）的高介电电容器，其铁电特性的发现更为新型铁电存储器（FeRAM）提供了理想的电容器材料选择。本综述将系统阐述HfO2基薄膜的关键性能调控策略：在介电特性方面，重点探讨通过物相结构调控实现具有高介电常数的准同型相界结构的有效方法，并深入分析有效降低漏电流密度的多种技术路径；在铁电性能方面，全面总结提高铁电极化、增强耐久特性以及降低矫顽场的优化策略。最后，本文将系统介绍HfO2薄膜的介电、铁电特性在DRAM、FeRAM、铁电场效应晶体管（FeFET）和铁电隧道结（FTJ）等信息存储器件中的具体应用。
, authors=杜新哲, 卢袁真子, 李家晨, 李垚忻, 沈胜春, 殷月伟, 李晓光, authorsList=杜新哲, 卢袁真子, 李家晨, 李垚忻, 沈胜春, 殷月伟, 李晓光, authorCompany=null, correspAuthors=李晓光, authorNote=
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李晓光（1961—），男，博士，教授。
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DU Xinzhe (1996-), male, Doctoral Candidate. E-mail: duxz@mail.ustc.edu.cn
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杜新哲（1996—），男，博士研究生。
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