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Article(id=1318979417670533388, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1318979383570837667, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20230381, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1685548800000, receivedDateStr=2023-06-01, revisedDate=1686931200000, revisedDateStr=2023-06-17, acceptedDate=null, acceptedDateStr=null, onlineDate=1792398798624, onlineDateStr=2026-10-19, pubDate=1700409600000, pubDateStr=2023-11-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792398798624, onlineIssueDateStr=2026-10-19, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792398798624, creator=13701087609, updateTime=1792398798624, updator=13701087609, issue=Issue{id=1318979383570837667, tenantId=1146029695717560320, journalId=1263187385517883426, year='2023', volume='51', issue='11', pageStart='2739', pageEnd='3038', issueExtLink='null', onlineDate='null', pubDate='1700409600000', pubDateStr='2023-11-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792398790495, creator='13701087609', updateTime=1792399377667, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1318981846411629158, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1318979383570837667, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1318981846411629159, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1318979383570837667, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=3005, endPage=3014, ext={EN=ArticleExt(id=1318979417867665677, articleId=1318979417670533388, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices, columnId=1263922772401635899, journalTitle=Journal of the Chinese Ceramic Society, columnName=Review, runingTitle=null, highlight=null, articleAbstract=

Diamond as a representative of ultra-wide bandgap semiconductor material has attracted recent attention. Although some progress is made in material preparation, device development and performance, semiconductor doping technology is not resolved so far. Hydrogen-terminated (C-H) diamond is widely used in microwave power devices due to its typical two-dimensional hole gas, but it has some problems such as poor stability and high interface state concentration. In contrast, silicon-terminated (C-Si) diamond that emerged in recent years has some advantages of lower interface state density, higher threshold voltage, carrier density, and stability rather than C-H diamond. C-Si diamond electronics exhibit the enhanced properties with high threshold voltages through an unclear mechanism. This review analyzed the structure and conduction mechanism of C-H diamond, the main problems that limit its development, represented the conduction mechanism, preparation method and corresponding interface structure of C-Si diamond, and discussed the performance level of C-Si diamond MOSFETs. In addition, the existing problems in the development of C-Si diamond were also discussed, and its future development was prospected.

, authors=Jinlong LIU1, Zichen ZHAO1, Shangman ZHAO1, Xiaohua ZHU1, Peng WANG1, Jinrui GUO1, Mingming GUO2, Junjun WEI1, Liangxian CHEN1, Jianlin LI2, Chengming LI1, authorsList=Jinlong LIU, Zichen ZHAO, Shangman ZHAO, Xiaohua ZHU, Peng WANG, Jinrui GUO, Mingming GUO, Junjun WEI, Liangxian CHEN, Jianlin LI, Chengming LI, authorCompany=null, correspAuthors=Chengming LI, authorNote=

LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

, correspAuthorsNote=
LI Chengming (1962-), male, Ph.D., Professor. E-mail:
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金刚石作为超宽禁带半导体材料的代表，逐渐成为大家关注的热点。尽管在材料制备、器件研制与性能方面取得了一定进展，但其半导体掺杂技术至今没有很好解决。氢终端金刚石由于具有典型的二维空穴气而被广泛应用于微波功率器件的研究，但其存在稳定性不佳、界面态浓度较高等问题。相比而言，近年来出现的硅终端（C—Si）金刚石具有比氢终端（C—H）金刚石更低的界面态密度、更高的阈值电压、载流子密度和稳定性等优点，有望解决氢终端金刚石半导体器件的问题。硅终端金刚石电子器件表现出高阈值电压的增强型特性，其机制尚不明确。本文从氢终端金刚石的结构、导电机理出发，分析限制其发展的主要问题，并综述了硅终端金刚石的导电机理、制备方法以及相应的界面结构，初步分析了硅终端MOSFETs的性能水平，最后阐述了目前硅终端金刚石发展存在的问题并展望了其发展前景。

, authors=刘金龙1, 赵子辰1, 赵上熳1, 朱肖华1, 王鹏1, 郭津瑞1, 郭明明2, 魏俊俊1, 陈良贤1, 李建林2, 李成明1, authorsList=刘金龙, 赵子辰, 赵上熳, 朱肖华, 王鹏, 郭津瑞, 郭明明, 魏俊俊, 陈良贤, 李建林, 李成明, authorCompany=null, correspAuthors=李成明, authorNote=

刘金龙（1985—），男，博士，研究员。

, correspAuthorsNote=
李成明（1962—），男，博士，教授。
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LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

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LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

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刘金龙（1985—），男，博士，研究员。

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刘金龙（1985—），男，博士，研究员。

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硅终端金刚石半导体与场效应管器件研究进展
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刘金龙 1 , 赵子辰 1 , 赵上熳 1 , 朱肖华 1 , 王鹏 1 , 郭津瑞 1 , 郭明明 2 , 魏俊俊 1 , 陈良贤 1 , 李建林 2 , 李成明 1
硅酸盐学报 | 综合评述 2023,51(11): 3005-3014
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硅酸盐学报 |综合评述 2023 , 51 (11) : 3005 -3014
硅终端金刚石半导体与场效应管器件研究进展
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刘金龙1 , 赵子辰1, 赵上熳1, 朱肖华1, 王鹏1, 郭津瑞1, 郭明明2, 魏俊俊1, 陈良贤1, 李建林2, 李成明1
作者信息
  • 1．北京科技大学新材料技术研究院，北京 100083
  • 2．河南飞孟金刚石股份有限公司，河南 孟州 454763
通讯作者:
李成明（1962—），男，博士，教授。
作者简介:

刘金龙（1985—），男，博士，研究员。

Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices
Jinlong LIU1 , Zichen ZHAO1, Shangman ZHAO1, Xiaohua ZHU1, Peng WANG1, Jinrui GUO1, Mingming GUO2, Junjun WEI1, Liangxian CHEN1, Jianlin LI2, Chengming LI1
Affiliations
  • 1.Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
  • 2.Henan Famous Diamond Industrial Co., Ltd, Mengzhou 454763, Henan, China
    • Corresponding Author:
    LI Chengming (1962-), male, Ph.D., Professor. E-mail:

    LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

出版时间: 2023-11-20 doi: 10.14062/j.issn.0454-5648.20230381
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金刚石作为超宽禁带半导体材料的代表，逐渐成为大家关注的热点。尽管在材料制备、器件研制与性能方面取得了一定进展，但其半导体掺杂技术至今没有很好解决。氢终端金刚石由于具有典型的二维空穴气而被广泛应用于微波功率器件的研究，但其存在稳定性不佳、界面态浓度较高等问题。相比而言，近年来出现的硅终端（C—Si）金刚石具有比氢终端（C—H）金刚石更低的界面态密度、更高的阈值电压、载流子密度和稳定性等优点，有望解决氢终端金刚石半导体器件的问题。硅终端金刚石电子器件表现出高阈值电压的增强型特性，其机制尚不明确。本文从氢终端金刚石的结构、导电机理出发，分析限制其发展的主要问题，并综述了硅终端金刚石的导电机理、制备方法以及相应的界面结构，初步分析了硅终端MOSFETs的性能水平，最后阐述了目前硅终端金刚石发展存在的问题并展望了其发展前景。

硅终端金刚石  /  金刚石半导体  /  场效应管器件

Diamond as a representative of ultra-wide bandgap semiconductor material has attracted recent attention. Although some progress is made in material preparation, device development and performance, semiconductor doping technology is not resolved so far. Hydrogen-terminated (C-H) diamond is widely used in microwave power devices due to its typical two-dimensional hole gas, but it has some problems such as poor stability and high interface state concentration. In contrast, silicon-terminated (C-Si) diamond that emerged in recent years has some advantages of lower interface state density, higher threshold voltage, carrier density, and stability rather than C-H diamond. C-Si diamond electronics exhibit the enhanced properties with high threshold voltages through an unclear mechanism. This review analyzed the structure and conduction mechanism of C-H diamond, the main problems that limit its development, represented the conduction mechanism, preparation method and corresponding interface structure of C-Si diamond, and discussed the performance level of C-Si diamond MOSFETs. In addition, the existing problems in the development of C-Si diamond were also discussed, and its future development was prospected.

silicon-terminated diamond  /  diamond semiconductor  /  field-effect transistor devices
刘金龙, 赵子辰, 赵上熳, 朱肖华, 王鹏, 郭津瑞, 郭明明, 魏俊俊, 陈良贤, 李建林, 李成明. 硅终端金刚石半导体与场效应管器件研究进展. 硅酸盐学报, 2023 , 51 (11) : 3005 -3014 . DOI: 10.14062/j.issn.0454-5648.20230381
Jinlong LIU, Zichen ZHAO, Shangman ZHAO, Xiaohua ZHU, Peng WANG, Jinrui GUO, Mingming GUO, Junjun WEI, Liangxian CHEN, Jianlin LI, Chengming LI. Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (11) : 3005 -3014 . DOI: 10.14062/j.issn.0454-5648.20230381
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  • 国家磁约束核聚变发展研究专项资助(2019YFE03100200)
  • 国家重点研发计划项目(2022YFB3608601)
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2023年第51卷第11期
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doi: 10.14062/j.issn.0454-5648.20230381
  • 接收时间：2023-06-01
  • 首发时间：2026-10-19
  • 出版时间：2023-11-20
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  • 收稿日期：2023-06-01
  • 修回日期：2023-06-17
基金
国家磁约束核聚变发展研究专项资助(2019YFE03100200)
国家重点研发计划项目(2022YFB3608601)
作者信息
    1．北京科技大学新材料技术研究院，北京 100083
    2．河南飞孟金刚石股份有限公司，河南 孟州 454763

通讯作者:

李成明（1962—），男，博士，教授。
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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20230381
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2种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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