Article(id=1320095771169505837, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320095743872971684, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250831, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1762876800000, receivedDateStr=2025-11-12, revisedDate=1767888000000, revisedDateStr=2026-01-09, acceptedDate=null, acceptedDateStr=null, onlineDate=1792664958040, onlineDateStr=2026-10-22, pubDate=1778601600000, pubDateStr=2026-05-13, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792664958040, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792664958040, creator=13701087609, updateTime=1792664958040, updator=13701087609, issue=Issue{id=1320095743872971684, tenantId=1146029695717560320, journalId=1263187385517883426, year='2026', volume='54', issue='6', pageStart='1881', pageEnd='2170', issueExtLink='null', onlineDate='null', pubDate='1781884800000', pubDateStr='2026-06-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792664951531, creator='13701087609', updateTime=1792738533970, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320404371276411812, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320095743872971684, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320404371276411813, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320095743872971684, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=1910, endPage=1915, ext={EN=ArticleExt(id=1320095771362443822, articleId=1320095771169505837, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Energy Storage Properties of PbZr0.52Ti0.48O3/MgO Multilayer Films, columnId=1263922769897599102, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Articles, runingTitle=null, highlight=null, articleAbstract=
Introduction

With the rapid development of new energy, pulsed power systems and other fields, there is an urgent demand for energy storage devices with a high power density, a fast charge-discharge rate and a long service life. Inorganic thin-film dielectric capacitors, featuring microsecond-level discharge speed and high safety, face a challenge of synergistically improving energy density and efficiency (e.g., the existing PZT thin films have an efficiency of <50% due to the large remanent polarization). As a widely studied material, PZT has an excellent polarization but a large leakage current. The existing optimizations include doping and heterostructure construction. This paper was to fabricate a "PZT/MgO" multilayer heterostructure by a sol-gel method. MgO was introduced to obtain a slim hysteresis loop, and the effect of annealing temperature on the phase structure, microstructure, dielectric and energy storage properties was investigated.

Methods

0.5 mol/L PbZr0.52Ti0.48O3 (PZT) and MgO thin film precursor solutions were prepared by a sol-gel method, aged at room temperature in dry darkness for 24 h, and then spin-coated on Pt/Ti/SiO2/Si substrates at 4000 r/min for 30 s. The wet films were dried at 200 ℃ for 5 min and pyrolyzed at 450 ℃ for 10 min. The process was repeated to obtain "PZT/MgO" multilayer films, which were annealed in O2 at 500-600 ℃ for 10 min.

The crystal structure was analyzed by X-ray diffraction (XRD, Rigaku Co., Japan). The surface/cross-sectional morphologies were determined by scanning electron microscopy (SEM, Thermo Scientific Co., USA). The leakage current was characterized by a Keithley 2400 analyzer (Keithley Co., USA). Au electrodes with the diameter of 200 μm were sputtered, and the P-E loops, breakdown strength (Eb), dielectric properties, and stability were determined by an aixACCT TF Analyzer 3000 (TF Co., Germany). Results and discussion The results show that the characteristic peaks of the perovskite phase of PZT and MgO phase are intensified, the full width at half maximum (FWHM) is narrowed, and the crystallinity is improved with the increase of temperature when the PZT/MgO multilayer heterostructure thin films are annealed at 500-600 ℃ for 10 min. The SEM images show that the thin film annealed at 550 ℃ for 10 min has a dense and defect-free surface, a tight cross-sectional structure without delamination, and a total thickness of approximately 250 nm. In terms of dielectric properties, the dielectric constant and dielectric loss change slightly when annealed at 500-550 ℃, but the both increases when the temperature exceeds 550 ℃. For energy storage performance, the optimal annealing temperature is 550 ℃. The recoverable energy density is 66.0 J/cm3 and the energy storage efficiency is 68.9% in an electric field of 6.77 MV/cm. At 550 ℃, the leakage current of the thin film is ≤ 10-7 A/cm2 in an electric field of 0-2.4 MV/cm, with the Weibull coefficient β of 19.93, indicating a high breakdown stability. Regarding the stability, the energy storage performance fluctuates slightly at 1-30 kHz in an electric field of 4 MV/cm. After 108 charge-discharge cycles, the attenuation of Wrec (recoverable energy density) and η (energy storage efficiency) is extremely small. Wrec increases with the electric field ranging from 1 MV/cm to 6 MV/cm, and the fitting result shows that n ≈ 1.86, presenting the quasi-linear polarization characteristics.

Conclusions

The surface of PZT/MgO multilayer film annealed at 550 ℃ for 10 min was dense without obvious delamination, and the thickness was approximately 250 nm, exhibiting good dielectric properties. In an electric field of 6.77 MV/cm, this film had a recoverable energy density of 66.0 J/cm3 and an energy storage efficiency of 68.9%, with a leakage current ≤ 10-7 A/cm2 (the Weibull coefficient β of 19.93). In addition, the film also had excellent frequency and cycling stability. Wrec increased with the electric field, and the fitting result showed that n ≈ 1.86, presenting the quasi-linear polarization characteristics.

, authors=Ying FENG, Xianhua WEI, authorsList=Ying FENG, Xianhua WEI, authorCompany=null, correspAuthors=Xianhua WEI, authorNote=

FENG Ying (1999-), female, Master candidate. E-mail:

, correspAuthorsNote=
{WEI} Xianhua (1976-), male, Ph.D., Professor. E-mail:
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PbZr0.52Ti0.48O3(PZT)薄膜铁电性能优异,在介质储能领域广受关注,但漏电流大、击穿场强受限的问题制约其应用。利用高绝缘性MgO,构建PZT/MgO多层异质结构,结合500~600 ℃退火温度调控优化性能。结果显示,多层膜随温升结晶度提升,550 ℃最优退火温度下,薄膜击穿场强高达6.77 MV/cm,可恢复能量密度66.0 J/cm3,能量效率68.9%,且介电损耗、漏电流小,频率及循环稳定性优异。研究表明,MgO层的插入以及结晶度对极化与击穿的平衡策略,可有效抑制载流子迁移,获得较佳的储能性能。

, authors=冯莹, 魏贤华, authorsList=冯莹, 魏贤华, authorCompany=null, correspAuthors=魏贤华, authorNote=

冯莹(1999—),女,硕士研究生。

, correspAuthorsNote=
魏贤华(1976—),男,博士,教授。
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PbZr0.52Ti0.48O3/MgO多层膜的制备与储能性能
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冯莹 , 魏贤华
硅酸盐学报 | 研究论文 2026,54(6): 1910-1915
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硅酸盐学报 |研究论文 2026 , 54 (6) : 1910 -1915
PbZr0.52Ti0.48O3/MgO多层膜的制备与储能性能
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冯莹 , 魏贤华
作者信息
  • 西南科技大学材料与化学学院,四川 绵阳 621000
通讯作者:
魏贤华(1976—),男,博士,教授。
作者简介:

冯莹(1999—),女,硕士研究生。

Energy Storage Properties of PbZr0.52Ti0.48O3/MgO Multilayer Films
Ying FENG , Xianhua WEI
Affiliations
  • Southwest University of Science and Technology, Mianyang 621000, Sichuan, China
  • Corresponding Author:
    {WEI} Xianhua (1976-), male, Ph.D., Professor. E-mail:

    FENG Ying (1999-), female, Master candidate. E-mail:

出版时间: 2026-05-13 doi: 10.14062/j.issn.0454-5648.20250831
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PbZr0.52Ti0.48O3(PZT)薄膜铁电性能优异,在介质储能领域广受关注,但漏电流大、击穿场强受限的问题制约其应用。利用高绝缘性MgO,构建PZT/MgO多层异质结构,结合500~600 ℃退火温度调控优化性能。结果显示,多层膜随温升结晶度提升,550 ℃最优退火温度下,薄膜击穿场强高达6.77 MV/cm,可恢复能量密度66.0 J/cm3,能量效率68.9%,且介电损耗、漏电流小,频率及循环稳定性优异。研究表明,MgO层的插入以及结晶度对极化与击穿的平衡策略,可有效抑制载流子迁移,获得较佳的储能性能。

锆钛酸铅基  /  多层薄膜  /  储能性能  /  介电性能  /  溶胶-凝胶法
Introduction

With the rapid development of new energy, pulsed power systems and other fields, there is an urgent demand for energy storage devices with a high power density, a fast charge-discharge rate and a long service life. Inorganic thin-film dielectric capacitors, featuring microsecond-level discharge speed and high safety, face a challenge of synergistically improving energy density and efficiency (e.g., the existing PZT thin films have an efficiency of <50% due to the large remanent polarization). As a widely studied material, PZT has an excellent polarization but a large leakage current. The existing optimizations include doping and heterostructure construction. This paper was to fabricate a "PZT/MgO" multilayer heterostructure by a sol-gel method. MgO was introduced to obtain a slim hysteresis loop, and the effect of annealing temperature on the phase structure, microstructure, dielectric and energy storage properties was investigated.

Methods

0.5 mol/L PbZr0.52Ti0.48O3 (PZT) and MgO thin film precursor solutions were prepared by a sol-gel method, aged at room temperature in dry darkness for 24 h, and then spin-coated on Pt/Ti/SiO2/Si substrates at 4000 r/min for 30 s. The wet films were dried at 200 ℃ for 5 min and pyrolyzed at 450 ℃ for 10 min. The process was repeated to obtain "PZT/MgO" multilayer films, which were annealed in O2 at 500-600 ℃ for 10 min.

The crystal structure was analyzed by X-ray diffraction (XRD, Rigaku Co., Japan). The surface/cross-sectional morphologies were determined by scanning electron microscopy (SEM, Thermo Scientific Co., USA). The leakage current was characterized by a Keithley 2400 analyzer (Keithley Co., USA). Au electrodes with the diameter of 200 μm were sputtered, and the P-E loops, breakdown strength (Eb), dielectric properties, and stability were determined by an aixACCT TF Analyzer 3000 (TF Co., Germany). Results and discussion The results show that the characteristic peaks of the perovskite phase of PZT and MgO phase are intensified, the full width at half maximum (FWHM) is narrowed, and the crystallinity is improved with the increase of temperature when the PZT/MgO multilayer heterostructure thin films are annealed at 500-600 ℃ for 10 min. The SEM images show that the thin film annealed at 550 ℃ for 10 min has a dense and defect-free surface, a tight cross-sectional structure without delamination, and a total thickness of approximately 250 nm. In terms of dielectric properties, the dielectric constant and dielectric loss change slightly when annealed at 500-550 ℃, but the both increases when the temperature exceeds 550 ℃. For energy storage performance, the optimal annealing temperature is 550 ℃. The recoverable energy density is 66.0 J/cm3 and the energy storage efficiency is 68.9% in an electric field of 6.77 MV/cm. At 550 ℃, the leakage current of the thin film is ≤ 10-7 A/cm2 in an electric field of 0-2.4 MV/cm, with the Weibull coefficient β of 19.93, indicating a high breakdown stability. Regarding the stability, the energy storage performance fluctuates slightly at 1-30 kHz in an electric field of 4 MV/cm. After 108 charge-discharge cycles, the attenuation of Wrec (recoverable energy density) and η (energy storage efficiency) is extremely small. Wrec increases with the electric field ranging from 1 MV/cm to 6 MV/cm, and the fitting result shows that n ≈ 1.86, presenting the quasi-linear polarization characteristics.

Conclusions

The surface of PZT/MgO multilayer film annealed at 550 ℃ for 10 min was dense without obvious delamination, and the thickness was approximately 250 nm, exhibiting good dielectric properties. In an electric field of 6.77 MV/cm, this film had a recoverable energy density of 66.0 J/cm3 and an energy storage efficiency of 68.9%, with a leakage current ≤ 10-7 A/cm2 (the Weibull coefficient β of 19.93). In addition, the film also had excellent frequency and cycling stability. Wrec increased with the electric field, and the fitting result showed that n ≈ 1.86, presenting the quasi-linear polarization characteristics.

lead zirconate titanate-based  /  multilayer thin films  /  energy storage performance  /  dielectric properties  /  sol-gel method
冯莹, 魏贤华. PbZr0.52Ti0.48O3/MgO多层膜的制备与储能性能. 硅酸盐学报, 2026 , 54 (6) : 1910 -1915 . DOI: 10.14062/j.issn.0454-5648.20250831
Ying FENG, Xianhua WEI. Energy Storage Properties of PbZr0.52Ti0.48O3/MgO Multilayer Films[J]. Journal of the Chinese Ceramic Society, 2026 , 54 (6) : 1910 -1915 . DOI: 10.14062/j.issn.0454-5648.20250831
  • 四川省科学技术厅项目(2024YFHZ0350)
  • 西南科技大学研究生创新基金(25ycx1018)
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doi: 10.14062/j.issn.0454-5648.20250831
  • 接收时间:2025-11-12
  • 首发时间:2026-10-22
  • 出版时间:2026-05-13
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  • 收稿日期:2025-11-12
  • 修回日期:2026-01-09
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四川省科学技术厅项目(2024YFHZ0350)
西南科技大学研究生创新基金(25ycx1018)
作者信息
    西南科技大学材料与化学学院,四川 绵阳 621000

通讯作者:

魏贤华(1976—),男,博士,教授。
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
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