Article(id=1321945508151669353, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1321945912352559151, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250616, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1752249600000, receivedDateStr=2025-07-12, revisedDate=1755532800000, revisedDateStr=2025-08-19, acceptedDate=null, acceptedDateStr=null, onlineDate=1793105969702, onlineDateStr=2026-10-27, pubDate=1768838400000, pubDateStr=2026-01-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793105969702, onlineIssueDateStr=2026-10-27, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793105969702, creator=13701087609, updateTime=1793105969702, updator=13701087609, issue=Issue{id=1321945912352559151, tenantId=1146029695717560320, journalId=1263187385517883426, year='2026', volume='54', issue='1', pageStart='1', pageEnd='350', issueExtLink='null', onlineDate='null', pubDate='1767715200000', pubDateStr='2026-01-07', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793106066072, creator='13701087609', updateTime=1793106066072, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=328, endPage=350, ext={EN=ArticleExt(id=1321945508420104810, articleId=1321945508151669353, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Annealing Process of Perovskite Thin Films in Perovskite Solar Cells, columnId=1263922772401635899, journalTitle=Journal of the Chinese Ceramic Society, columnName=Review, runingTitle=null, highlight=null, articleAbstract=
Perovskite solar cells (PSCs) have grown into a research hotspot in the field of photovoltaics due to their exceptional optoelectronic properties. The photovoltaic performance of PSCs is directly influenced by the perovskite thin film as the light-absorption layer of the device. Generally, the growth conditions of perovskite crystals are one of the primary factors for the quality of the perovskite film. The photovoltaic performance of PSCs is critically dependent on the quality of the perovskite film, in which the annealing method plays a pivotal role in the fabrication process. During the formation of high-quality perovskite crystals, the role of annealing is primarily to remove solvents from the wet perovskite film and promote the crystallization of film. The different annealing methods and processes vary in their effectiveness of facilitating film growth. This article reviews recent advancement in annealing for perovskite thin films in PSCs, with a particular emphasis on prevalent annealing methods and the critical process factors governing the final film quality and device performance. First, the annealing process and its mechanism in promoting the crystallization of perovskite films is introduced. Second, the principal annealing methods reported to date for perovskite crystallization are summarized, including traditional thermal annealing, improved thermal annealing techniques, and novel annealing technologies. Third, the critical process parameters included the synergistic effects of temperature, time, and annealing atmosphere and non-process factors involved the properties of the substrate material for governing the annealing results are systematically discussed. Subsequently, the development of annealing-free techniques for perovskite films is examined. Finally, the future research directions for the annealing process of perovskite thin films are outlined, with the aim of supporting the commercialization of perovskite solar cells.
Summary and Prospects The annealing process for perovskite thin films helps to increase the nucleation rate during film formation, then enhances the grain density, and subsequently promotes the formation of larger and uniformly distributed grains, and ultimately results in high-quality perovskite films, thereby improving the photovoltaic performance of the devices. This article systematically reviews the influencing mechanisms of the annealing process, the types of annealing methods, the process parameters affecting annealing outcomes, and the latest advancements in annealing-free techniques for perovskite thin films. The aim is to provide theoretical foundations and technical references for the preparation of high-quality perovskite films and high-performance PSCs.
By optimizing the uniformity and coverage of perovskite films, the annealing process promotes grain growth and passivates interface defects, thereby enhancing the crystalline quality and optoelectronic properties of the films. While traditional thermal annealing improves film quality to some extent, it can also lead to issues such as pinholes and uneven grain size, which limit the development of PSCs. Consequently, a variety of novel annealing techniques have been developed, including electromagnetic wave (infrared, ultraviolet, laser, and microwave) annealing, ultrasonic annealing, pressure annealing, and solvent annealing. Moreover, precise control of annealing parameters—such as temperature, heating rate, duration, and ambient atmosphere—has been proven critical to optimizing annealing outcomes and directly influences the photovoltaic performance of the devices.
Despite significant progress in annealing techniques, their side effects cannot be overlooked. For instance, high-temperature annealing may trigger perovskite decomposition, some methods are complex and lack reproducibility, and the process incurs additional costs. As a result, annealing-free techniques are gaining attention, as they simplify the fabrication process of PSCs, reduce energy consumption, and lower costs. However, the crystalline quality of annealing-free films still lags behind that of annealed films, warranting further exploration.
Looking ahead, research on the annealing process for perovskite thin films is likely to develop in the following directions:
First, further advancement of in-situ characterization techniques to deeply reveal the microscopic mechanisms of crystal growth during annealing.
Second, leveraging the advantages of machine learning for high-throughput screening of annealing process data to guide the laboratory preparation and industrial application of high-efficiency PSCs.
Third, continued development of novel annealing and annealing-free techniques that balance efficiency and low energy consumption, ensuring high film quality while simplifying the fabrication process and reducing costs.
Currently, the industrialization of perovskite solar cells is becoming increasingly prominent, particularly in perovskite-silicon tandem solar cells. There is an urgent need to address the challenge of achieving uniform crystallization of large-area perovskite films compatible with industrial-grade silicon wafers, which will propel the industrialization of perovskite photovoltaics to a new stage.
, authors=Wenbing MENG
1, Tayirjan· TURERSUN
1, Minghua HE
1, Linrui ZHANG
2, 3, Jun NING
2, 3, authorsList=Wenbing MENG, Tayirjan· TURERSUN, Minghua HE, Linrui ZHANG, Jun NING, authorCompany=null, correspAuthors=Jun NING, authorNote=
, correspAuthorsNote=
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钙钛矿太阳能电池(PSCs)因其卓越的光电性能成为光伏领域的研究热点。钙钛矿薄膜作为器件中的光吸收层,直接影响PSCs器件的光伏性能。通常情况下,钙钛矿晶体的生长条件是决定钙钛矿薄膜质量的主要因素之一。在高质量钙钛矿晶体的形成过程中,退火的作用主要是去除钙钛矿湿膜中的溶剂并促使薄膜结晶。不同退火方法及工艺对薄膜生长的促进作用也不尽相同。因此,本文综述了总结已报道的钙钛矿晶体生长的主要退火方法,讨论了不同退火工艺下钙钛矿薄膜的结晶质量,并系统地总结了影响退火效果的主要工艺因素。最后,预测了退火工艺在未来钙钛矿太阳能电池商业化发展中的前景。
, authors=孟文兵
1, 图尔荪塔伊尔江·
1, 贺明化
1, 张林睿
2, 3, 宁君
2, 3, authorsList=孟文兵, 图尔荪塔伊尔江·, 贺明化, 张林睿, 宁君, authorCompany=null, correspAuthors=宁君, authorNote=
, correspAuthorsNote=
宁君(1983—),男,博士,副教授。
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1.School of Mathematics and Physics, Xinjiang Hetian College, Hetian 848000, Xinjiang, China, bio={"content":"
MENG Wenbing (1992-), male, Master, Lecturer. E-mail: 1151076702@qq.com
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MENG Wenbing (1992-), male, Master, Lecturer. E-mail: 1151076702@qq.com
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1.新疆和田学院数理学院,新疆 和田 848000, bio={"content":"
孟文兵(1992—),男,硕士,讲师。
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孟文兵(1992—),男,硕士,讲师。
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1.新疆和田学院数理学院,新疆 和田 848000)])]), Author(id=1322572828239573976, tenantId=1146029695717560320, journalId=1263187385517883426, articleId=1321945508151669353, orderNo=2, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=null, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322572828654810074, tenantId=1146029695717560320, journalId=1263187385517883426, articleId=1321945508151669353, authorId=1322572828239573976, language=EN, stringName=Minghua HE, firstName=Minghua, middleName=null, lastName=HE, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=
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2, 3, address=
2.College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, China
3.Inner Mongolia Key Laboratory for Applied Condensed Matter Physics, Hohhot 010022, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322572829946655713, tenantId=1146029695717560320, journalId=1263187385517883426, articleId=1321945508151669353, authorId=1322572829430756317, language=CN, stringName=张林睿, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=
2, 3, address=
2.内蒙古师范大学物理与电子信息学院,呼和浩特 010022
3.内蒙古自治区应用凝聚态物理重点实验室,呼和浩特 010022, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322572826096284614, tenantId=1146029695717560320, journalId=1263187385517883426, articleId=1321945508151669353, xref=2., ext=[AuthorCompanyExt(id=1322572826129839047, tenantId=1146029695717560320, journalId=1263187385517883426, articleId=1321945508151669353, companyId=1322572826096284614, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=
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2, 3, address=
2.College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, China
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2, 3, address=
2.内蒙古师范大学物理与电子信息学院,呼和浩特 010022
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