Article(id=1321945990047846962, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1321945912352559151, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20250597, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1754582400000, receivedDateStr=2025-08-08, revisedDate=1761494400000, revisedDateStr=2025-10-27, acceptedDate=null, acceptedDateStr=null, onlineDate=1793106084595, onlineDateStr=2026-10-27, pubDate=1768838400000, pubDateStr=2026-01-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793106084595, onlineIssueDateStr=2026-10-27, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793106084595, creator=13701087609, updateTime=1793106084595, updator=13701087609, issue=Issue{id=1321945912352559151, tenantId=1146029695717560320, journalId=1263187385517883426, year='2026', volume='54', issue='1', pageStart='1', pageEnd='350', issueExtLink='null', onlineDate='null', pubDate='1767715200000', pubDateStr='2026-01-07', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793106066072, creator='13701087609', updateTime=1793106066072, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=195, endPage=206, ext={EN=ArticleExt(id=1321945992128221747, articleId=1321945990047846962, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=BeZnOS/Ga
2O
3 Heterostructure Thin Films: Fabrication and Self-Driven Ultraviolet Photodetectors, columnId=1263922769897599102, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Articles, runingTitle=null, highlight=null, articleAbstract=
Objective Wide-bandgap oxide semiconductors Ga2O3 and ZnO have garnered significant attention due to their exceptional optoelectronic properties and thermo-chemical stability. This study innovatively integrates a ZnO quaternary alloy (BeZnOS) with Ga2O3 to construct a novel BeZnOS/Ga2O3 heterojunction ultraviolet photodetector. By leveraging the synergistic band modulation via isovalent ion (Be2+/S2-) co-doping in ZnO, we aim to enhance the photogenerated carrier separation and transport efficiency through optimized heterojunction band alignment, ultimately developing a high-performance self-driven deep-UV photodetector. This work provides new insights into ZnO bandgap engineering and establishes a materials foundation for developing high-performance, all-oxide-based deep-ultraviolet photodetectors.
Methods The heterostructure thin films were synthesized via pulsed laser deposition (PLD) using KrF excimer laser ablation (λ=248 nm) on c-plane sapphire substrates. Ceramic targets of BeZnOS and Ga2O3 were prepared by solid-state sintering at 1200 ℃ under argon atmosphere. Prior to deposition, substrates underwent rigorous cleaning in acetone, ethanol, and deionized water (15 min each) followed by N2 drying. BeZnOS films were grown at 700 ℃ with 2 Pa O2 partial pressure and 350 mJ laser energy, while Ga2O3 layers were selectively deposited through a shadow mask at 650 ℃ (2 Pa O2, 250 mJ). Post-growth in situ annealing was performed at 550 ℃ (20 Pa O2, 20 min) to optimize crystallinity. Device fabrication was completed by depositing Pt (high-work-function) and Al (low-work-function) electrodes through magnetron sputtering (100 W, 1.5 Pa Ar) to form Pt/BeZnOS/Ga2O3/Al architectures with 200 μm×200 μm contacts.
Comprehensive structural and optoelectronic characterizations were conducted using high-resolution X-ray diffraction (XRD), UV-Vis-NIR transmission spectroscopy, field-emission scanning electron microscopy with energy-dispersive spectroscopy (FESEM/EDS), and X-ray/ultraviolet photoelectron spectroscopy (XPS/UPS). These techniques systematically analyzed crystalline phase purity, optical bandgaps, elemental distribution profiles, and energy band configurations. A Omni-λ 3027 setup consisting of Keithley 2635 digital source meter, probe station, electromagnetic shielding dark box, monochromator, 150 W xenon lamp and phase-locked amplifier, was utilized to measure the optoelectronic performances of the photodetector.
Results and discussion Structural characterization via high-resolution XRD confirmed phase-pure hexagonal wurtzite BeZnOS and monoclinic β-Ga2O3 film. Optical transmission spectrum revealed dual absorption edges, corresponding to direct bandgaps of 3.30 (BeZnOS) and 4.50 eV (Ga2O3) via Tauc analysis. Cross-sectional FE-SEM demonstrated layer thicknesses of 212 nm (BeZnOS) and 165 nm (Ga2O3), while EDS mapping confirmed elemental stratification with well-defined heterointerfaces. The fabricated Pt/BeZnOS/Ga2O3/Al photodetector exhibits pronounced rectifying behavior (rectification ratio: 1.72×102) and achieved self-powered operation at zero bias. Notably, dual spectral response peaks emerged in the UVC and UVA regions, with a peak responsivity of 23.5 mA/W at 240 nm and a corresponding specific detectivity of 2.3×1011 Jones. The device further demonstrated rapid response kinetics (rise time τr = 0.09 s; decay time τd = 0.10 s). These exceptional characteristics originate from the synergistic coupling of built-in electric fields: 1) the type-II band alignment at the BeZnOS/Ga2O3 heterojunction (ΔEC = 1.9 eV, ΔEV = 0.7 eV), and 2) the Schottky barrier at the Pt/BeZnOS interface. This dual-field configuration drives efficient spatial separation of electrons and holes, reducing recombination and enhancing photocurrent generation. Additionally, the photoresponse characteristics of the device exhibit significant intensity dependence: under weak illumination, it demonstrates higher responsivity but slower response speed, whereas under strong illumination, it shows lower responsivity yet faster response speed. This phenomenon primarily originates from the carrier saturation effect in deep-level trap states, whereby high light intensity saturates the trap centers, thereby suppressing the persistent photoconductivity (PPC) relaxation process.
Conclusion This work successfully demonstrates a high-performance self-driven deep-UV photodetector based on an engineered BeZnOS/Ga2O3 heterojunction, achieving high sensitivity (R240 nm = 23.5 mA/W, D* = 2.3×1011 Jones) and fast response (τr/τd=0.09 s/0.10 s) at zero bias. The fabricated heterojunction forms a type-II band alignment, which directionally couples with the built-in electric field of the Pt/BeZnOS Schottky junction to generate an enhanced composite field. This synergistic configuration significantly promotes the separation and transport of photogenerated carriers, ultimately enabling high-sensitivity and rapid-response self-powered operation. The innovative dual-junction synergistic modulation strategy demonstrates significant potential for advancing self-driven optoelectronic devices.
, authors=Teng ZHANG, Yongdan ZHU, Yuan ZHANG, Dahua REN, Zhangyang ZHOU, Jiying YU, Jinqiao YI, authorsList=Teng ZHANG, Yongdan ZHU, Yuan ZHANG, Dahua REN, Zhangyang ZHOU, Jiying YU, Jinqiao YI, authorCompany=null, correspAuthors=Jinqiao YI, authorNote=
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2O
3异质结薄膜制备及其作为自驱动型紫外探测器件的性能, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=
宽禁带氧化物半导体Ga2O3与ZnO因其优异的光电性能和化学热稳定性备受关注。本工作创新性地将ZnO四元合金（BeZnOS）与Ga2O3结合，提出采用等价离子（Be2+/S2-）复合取代、协同调制ZnO能带结构构筑新型高性能BeZnOS/Ga2O3异质结紫外光电探测器。采用脉冲激光沉积技术成功制备Ⅱ型能带排列的异质结薄膜，并通过X射线衍射、透射光谱、场发射扫描电子显微镜／能谱分析仪和X射线／紫外光电子能谱系统表征薄膜的晶体结构、光学带隙、元素分布及能带结构。结果表明：BeZnOS呈六方纤锌矿单相（带隙Eg = 3.3 eV），Ga2O3为单斜相（Eg = 4.5 eV）。进一步设计并开发了基于Pt/BeZnOS/Ga2O3/Al结构的紫外探测器。器件呈现典型的整流特性（整流比1.72×102），且在零偏压下实现稳定的紫外光响应，其对240 nm波长深紫外光的最高响应度达23.5 mA/W，相应的探测率为2.3×1011 Jones，上升／回复时间为0.09 s/0.10 s。经分析，上述自驱动高灵敏快速光响应主要得益于BeZnOS/Ga2O3异质结与Pt/BeZnOS肖特基结的内建电场叠加耦合效应，显著提升了载流子分离传输效率。该工作可为ZnO能带工程提供新思路，也为开发全氧化物高性能深紫外探测器奠定了材料基础。
, authors=张腾, 朱永丹, 张源, 任达华, 周章洋, 余基映, 易金桥, authorsList=张腾, 朱永丹, 张源, 任达华, 周章洋, 余基映, 易金桥, authorCompany=null, correspAuthors=易金桥, authorNote=
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易金桥（1979—），男，博士，教授。
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张腾（1987—），男，博士，高级实验师。
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