硅酸盐学报

界面工程技术用于空气环境制备的高性能倒置无机钙钛矿太阳电池

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王三龙 ¹ , 高京萍 ¹ , 祖阁 ² , 徐文慧 ¹ , 栾慧煦 ¹

硅酸盐学报 | 研究论文 2025,53(4): 941-947

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硅酸盐学报 |研究论文 2025 , 53 (4) : 941 -947

界面工程技术用于空气环境制备的高性能倒置无机钙钛矿太阳电池

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王三龙¹, 高京萍¹, 祖阁², 徐文慧¹, 栾慧煦¹

作者信息

^1．东北电力大学电气工程学院，现代电力系统仿真控制与绿色电能新技术教育部重点实验室，吉林吉林 132012

^2．东北电力大学理学院，吉林吉林 132012

通讯作者:

栾慧煦（1994—），男，博士，讲师。

作者简介:

王三龙（1992—），男，博士，讲师。

Interface Engineering Technology for High-Performance Inverted Inorganic Perovskite Solar Cells Prepared in Air

Sanlong WANG¹, Jingping GAO¹, Ge ZU², Wenhui XU¹, Huixu LUAN¹

Affiliations

^1.Key Laboratory of Modern Power System Simulation and Control and New Green Energy Technology of Ministry of Education, Northeast Electric Power University, Jilin 132012, China School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, Jilin, China

^2.School of science, Northeast Electric Power University, Jilin 132011, Jilin, China

Corresponding Author:

LUAN Huixu (1994-), male, Ph.D., Lecturer. E-mail: 20233213@neepu.edu.cn

WANG Sanlong (1992-), male, Ph.D., Lecturer. E-mail: 20233209@neepu.edu.cn

出版时间: 2025-04-20 doi: 10.14062/j.issn.0454-5648.20240633

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摘要

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带隙约为1.7 eV的倒置无机钙钛矿太阳电池（IPSCs）由于其元素组成和优异的光、热稳定性，有望成为下一代光伏电池的候选材料。然而，界面处较高的缺陷态密度和能级失配导致光伏性能不如具有相同带隙的有机-无机杂化太阳电池（HPSCs），而使用界面工程技术利用四丁基碘化铵（TBAI）对倒置器件的光吸收层表面进行处理有效降低了倒置器件的缺陷态密度，抑制了非辐射复合，减少了界面处的载流子积累。最终，空气环境制备的IPSCs的光电转换效率（PCE）由17.10%提升到19.76%，PCE提升约为15.56%。同时，装置的稳定性也得到提升。

关键词

无机钙钛矿 / 缺陷态密度 / 能级失配 / 界面工程 / 非辐射复合

Abstract

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Introduction

The inverted inorganic perovskite solar cells (IPSCs) with a bandgap of 1.7 eV are prospective candidates for the next generation of photovoltaic cells due to their elemental composition and unparalleled light and thermal stability. However, the higher defect state density and energy level mismatch at the interface result in an inferior photovoltaic performance to that of organic-inorganic hybrid perovskite solar cells (HPSCs) with the same bandgap. In this paper, tetrabutylammonium iodide (TBAI) was used to treat the surface of the optical absorption layer of the inverted device. The interface engineering technique can effectively reduce the density of defect states in the inverted device, suppress non-radiative recombination, and decrease the carrier accumulation at the interface. Finally, the photoelectric conversion efficiency (J) of IPSCs prepared in air is increased from 17.10% to 19.76%, and the PCE is increased by 15.56%. In addition, the stability of the device is also considerably improved.

Method

The NiO_x solution was spun on the surface of FTO glass and annealed at 130 ℃ for 20 min. After cooling to room temperature, the P3CT-N solution was spun coated on the surface of the annealed NiO_x and annealed in air at 130 ℃ for 10 min. Afterwards, the prepared perovskite precursor liquid was spun coated on the surface of P3CT-N preheated at 70 ℃, and annealing on a hot plate at 190 ℃ for 5-8 min. The annealed films were transferred to a N₂ atmosphere glove box for dynamic spin coating of TBAI (IPA) solution, and then annealed at 80 ℃ for 5 min. MgF₂ was thermally evaporated on the surface of TBAI by an evaporation equipment. PC₆₁BM (CB) was spun as the electron transport layer, and BCP (IPA) was spun as the hole barrier layer. Finally, the evaporation device vaporized Ag with the thickness of 80.0 nm on the surface of the BCP as a metal electrode.

Results and discussion

The SEM images show that the particles of TBAI treated films are fuller and the holes significantly reduce. These holes are the center of non-radiative recombination, seriously restricting the improvement of photovoltaic performance of devices. The results of UV-absorption test indicate that TBAI post-treatment does not change the bandgap of inorganic perovskite CsPbI_2.85Br_0.15. The results of TRPL test show that the TBAI-treated films have a longer carrier lifetime, indicating that the non-radiative recombination is inhibited. Based on the results of the Mott-Schottky test, the TBAI-treated device demonstrates a built-in electric field of 1.196 V, which is much higher than that of the reference group (i.e., 1.038 V), and a larger built-in electric field means a more intense carrier separation drive, corresponding to a higher V_OC. The steady-state power output (SPO) efficiency of the TBAI treated device is tested for 300 s, and the average SPO efficiency of the device is 19.36% for over 400 s. A pure hole device is constructed to analyze the defect state density of the two films. The V_TFL values of the control and TBAI treated devices are 1 V and 0.95 V, respectively, and the corresponding defect state densities are 1.68×10¹⁶ and 1.56×10¹⁶ cm^-3, respectively. The TBAI post-treatment reduces the defect state density of the films, inhibiting non-radiative recombination. The humidity stability of the two films is monitored under specific conditions. The decomposition the films in the control group appears when the films in the control group are in humid air for 72 h, while that in the experimental group almost constancy.

Conclusions

The defect state density at the interface of IPSCs was high, and the non-radiation recombination loss was serious, thus restricting the further improvement of the photovoltaic performance of the device. In this paper, TBAI was used to post-treated the surface of CsPbI_2.85Br_0.15, which improved the crystal quality of the film, effectively reduced the density of defect states, inhibited non-radiative recombination, and reduced unnecessary carrier accumulation at the interface. IPSCs prepared in air treated by this interface engineering achieved a champion PCE of 19.76% with a V_OC of 1.200 V. This work could provide a method for preparing highly efficient and stable IPSCs in air, thus promoting the practical process.

Key words

inorganic perovskite / defect state density / energy level mismatch / interface engineering / non-radiative recombination

引用本文

王三龙, 高京萍, 祖阁, 徐文慧, 栾慧煦. 界面工程技术用于空气环境制备的高性能倒置无机钙钛矿太阳电池. 硅酸盐学报, 2025 , 53 (4) : 941 -947 . DOI: 10.14062/j.issn.0454-5648.20240633

Sanlong WANG, Jingping GAO, Ge ZU, Wenhui XU, Huixu LUAN. Interface Engineering Technology for High-Performance Inverted Inorganic Perovskite Solar Cells Prepared in Air[J]. Journal of the Chinese Ceramic Society, 2025 , 53 (4) : 941 -947 . DOI: 10.14062/j.issn.0454-5648.20240633

基金

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吉林省教育厅科技项目(JJKH20230103KJ)

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2025年第53卷第4期

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文章信息

doi: 10.14062/j.issn.0454-5648.20240633

接收时间：2024-09-30
首发时间：2026-10-22
出版时间：2025-04-20

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出版历史

收稿日期：2024-09-30
修回日期：2024-10-31

基金

吉林省教育厅科技项目(JJKH20230103KJ)

作者信息

^1．东北电力大学电气工程学院，现代电力系统仿真控制与绿色电能新技术教育部重点实验室，吉林吉林 132012

^2．东北电力大学理学院，吉林吉林 132012

通讯作者:

栾慧煦（1994—），男，博士，讲师。

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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