Article(id=1320090139896959420, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20240601, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1726675200000, receivedDateStr=2024-09-19, revisedDate=1734969600000, revisedDateStr=2024-12-24, acceptedDate=null, acceptedDateStr=null, onlineDate=1792663615440, onlineDateStr=2026-10-22, pubDate=1745078400000, pubDateStr=2025-04-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792663615440, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792663615440, creator=13701087609, updateTime=1792663615440, updator=13701087609, issue=Issue{id=1320090116236882876, tenantId=1146029695717560320, journalId=1263187385517883426, year='2025', volume='53', issue='4', pageStart='733', pageEnd='1030', issueExtLink='null', onlineDate='null', pubDate='1745078400000', pubDateStr='2025-04-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792663609799, creator='13701087609', updateTime=1792663788359, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320090865276670951, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320090865276670952, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320090116236882876, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=948, endPage=957, ext={EN=ArticleExt(id=1320090140136034749, articleId=1320090139896959420, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Simulation of Solid State Dye-Sensitized Solar Cells, columnId=1319726165087077079, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Article, runingTitle=null, highlight=null, articleAbstract=
Introduction

Dye-sensitized solar cells (DSSC), as the third generation of solar cells, have the advantages of low cost, environmental protection, pollution-free, and abundant raw materials. Conventional liquid-state electrolyte of DSSC restricts an absorption capacity of visible light and is corrosive, which is considered as an obstacle to the long-term use of DSSC. Solid-state electrolyte has attracted much attention because it overcomes the shortcomings of liquid-state electrolyte (i.e., volatile organic solvent, poor stability and easy leakage). TiO2 is often used as a photoanode material for DSSC, and its conduction band can match the energy level of common dyes to accelerate electron transfer. However. TiO2 has a low electron mobility, a low conductivity, a long-term ultraviolet irradiation and the existence of oxygen vacancy, which hinders the effective current output and reduces the photoelectric conversion efficiency. ZnO material can replace TiO2 as a photoanode because of its high electron mobility and transparency, and it is also a wide-band gap semiconductor material. To improve the photoelectric conversion efficiency of DSSC and solve the problem of liquid-state electrolyte leakage, ZnO solid-state dye-sensitized solar cells were simulated by a software named SCAPS-1D, and the photoelectric performance of solid-state DSCC was analyzed.

Methods

Based on FTO/ZnO/N719/PEDOT: PSS/Au structure modeling by the software SCAPS-1D, a solid-state DSSC model in each layer material interface lose band gap, dielectric constant, mobility and other parameters, and inside layer and layer between the defects was set up under AM1.5G 1 standard solar lighting at an incident light power of 100 mW/cm2. The material defect was set as a neutral defect to ensure that the defect could generate SRH recombination without generating space charge because the charge recombination mode of DSSC was mainly SRH. The Poisson equation, carrier continuity equation and carrier drift diffusion equation were numerically solved by the software of SCAPS-1D. The influences of material thickness, operating temperature, series parallel resistance and back contact metal type on the DSSC photoelectric parameters were simulated, and the internal mechanism of the influences of various factors on the DSSC was analyzed.

Results and discussion

The open circuit voltage, short circuit current density and photoelectric conversion efficiency increase significantly, and the thickness continues to increase to 1000 nm, as well as the photoelectric parameters increase slowly when the thickness of the dye layer increases from 100 nm to 500 nm. The maximum photoelectric conversion efficiency can be obtained at the thickness of electron transport layer of 20 nm. The photoelectric conversion efficiency increases with the increase of hole transport layer thickness. The efficiency decreases with the increase of operating temperature, and the maximum photoelectric conversion efficiency is 15.17% at 300 K. The open circuit voltage and short circuit current density change little, and the filling factor and photoelectric conversion efficiency decrease when DSSC series resistance increases. The short circuit current density basically unchanges, and other parameters improve when the shunt resistance increases. The effect of changing the type of back contact metal on the photoelectric performance of DSSC is analyzed. The open circuit voltage, short circuit current density and photoelectric conversion efficiency all increase when the back contact metal work function value increases, and the maximum photoelectric conversion efficiency can be obtained when Au is used as the back contact metal.

Conclusions

The optimal thickness of dye layer was 500 nm, and the maximum photoelectric conversion efficiency could be obtained at the thickness of electron transport layer of 20 nm, and the photoelectric conversion efficiency increased with the thickness of hole transport layer. The maximum photoelectric conversion efficiency was 15.17% at the operating temperature of 300 K. The series parallel resistance had an important effect on the photoelectric performance of DSSC. The smaller the series resistance was, the larger the parallel resistance could be, for the improvement of the photoelectric conversion efficiency of DSSC. The electrical conversion efficiency increased when the back contact metal work function value increased, and the maximum photoelectric conversion efficiency could be obtained as Au was used as the back contact metal.

, authors=Youliang CHENG1, 2, Zhongbao ZHANG1, 2, authorsList=Youliang CHENG, Zhongbao ZHANG, authorCompany=null, correspAuthors=null, authorNote=

CHENG Youliang (1963-), male, Professor. E-mail:

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为解决染料敏化太阳能电池(DSSC)液态电解质有机溶剂易挥发、稳定性差、易泄漏等问题,采用固态电解质取代液态电解质,增强DSSC的稳定性和耐用性。基于SCAPS-1D软件建立了以ZnO、PEDOT:PSS分别为电子传输层和空穴传输层、N719为光敏层的固态DSSC结构,主要研究了电池各层厚度、工作温度、串并联电阻、背接触金属类型对DSSC光电参数的影响。结果表明:随着光敏层厚度增大,电池性能显著提高,继续增加厚度时,开路电压(Voc)、短路电流密度(Jsc)和光电转换效率(PCE)增长速率变慢,光敏层的最佳厚度为500 nm;工作温度升高,Voc、Jsc、PCE逐渐下降,在300 K时有最高PCE为15.17%;串联电阻(Rs)和并联电阻(Rsh)对电池性能有重要影响,Rs增加对Voc和Jsc变化较小,但PCE和填充因子(FF)显著下降,Rs应尽量小,Rsh增加对Jsc几乎无影响,Voc和FF得到改善,PCE提高,Rsh应尽可能高;背接触金属功函数值增大,光电性能得到增强,当背接触金属为Au时PCE最高。该工作为提高固态DSSC的光电性能提供了理论指导,有助于固态DSSC的进一步发展。

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程友良(1963—),男,博士,教授。

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固态染料敏化太阳能电池的模拟研究
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程友良 1, 2 , 张忠宝 1, 2
硅酸盐学报 | 研究论文 2025,53(4): 948-957
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硅酸盐学报 |研究论文 2025 , 53 (4) : 948 -957
固态染料敏化太阳能电池的模拟研究
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程友良1, 2 , 张忠宝1, 2
作者信息
  • 1.华北电力大学动力工程系,河北 保定 071003
  • 2.华北电力大学河北省低碳高效发电技术重点实验室,河北 保定 071003
作者简介:

程友良(1963—),男,博士,教授。

Simulation of Solid State Dye-Sensitized Solar Cells
Youliang CHENG1, 2 , Zhongbao ZHANG1, 2
Affiliations
  • 1.Department of Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
  • 2.Key Laboratory of Low Carbon and Efficient Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China
  • CHENG Youliang (1963-), male, Professor. E-mail:

出版时间: 2025-04-20 doi: 10.14062/j.issn.0454-5648.20240601
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为解决染料敏化太阳能电池(DSSC)液态电解质有机溶剂易挥发、稳定性差、易泄漏等问题,采用固态电解质取代液态电解质,增强DSSC的稳定性和耐用性。基于SCAPS-1D软件建立了以ZnO、PEDOT:PSS分别为电子传输层和空穴传输层、N719为光敏层的固态DSSC结构,主要研究了电池各层厚度、工作温度、串并联电阻、背接触金属类型对DSSC光电参数的影响。结果表明:随着光敏层厚度增大,电池性能显著提高,继续增加厚度时,开路电压(Voc)、短路电流密度(Jsc)和光电转换效率(PCE)增长速率变慢,光敏层的最佳厚度为500 nm;工作温度升高,Voc、Jsc、PCE逐渐下降,在300 K时有最高PCE为15.17%;串联电阻(Rs)和并联电阻(Rsh)对电池性能有重要影响,Rs增加对Voc和Jsc变化较小,但PCE和填充因子(FF)显著下降,Rs应尽量小,Rsh增加对Jsc几乎无影响,Voc和FF得到改善,PCE提高,Rsh应尽可能高;背接触金属功函数值增大,光电性能得到增强,当背接触金属为Au时PCE最高。该工作为提高固态DSSC的光电性能提供了理论指导,有助于固态DSSC的进一步发展。

染料敏化太阳能电池  /  固态电解质  /  SCAPS-1D  /  串并联电阻  /  背接触金属  /  光电转换效率
Introduction

Dye-sensitized solar cells (DSSC), as the third generation of solar cells, have the advantages of low cost, environmental protection, pollution-free, and abundant raw materials. Conventional liquid-state electrolyte of DSSC restricts an absorption capacity of visible light and is corrosive, which is considered as an obstacle to the long-term use of DSSC. Solid-state electrolyte has attracted much attention because it overcomes the shortcomings of liquid-state electrolyte (i.e., volatile organic solvent, poor stability and easy leakage). TiO2 is often used as a photoanode material for DSSC, and its conduction band can match the energy level of common dyes to accelerate electron transfer. However. TiO2 has a low electron mobility, a low conductivity, a long-term ultraviolet irradiation and the existence of oxygen vacancy, which hinders the effective current output and reduces the photoelectric conversion efficiency. ZnO material can replace TiO2 as a photoanode because of its high electron mobility and transparency, and it is also a wide-band gap semiconductor material. To improve the photoelectric conversion efficiency of DSSC and solve the problem of liquid-state electrolyte leakage, ZnO solid-state dye-sensitized solar cells were simulated by a software named SCAPS-1D, and the photoelectric performance of solid-state DSCC was analyzed.

Methods

Based on FTO/ZnO/N719/PEDOT: PSS/Au structure modeling by the software SCAPS-1D, a solid-state DSSC model in each layer material interface lose band gap, dielectric constant, mobility and other parameters, and inside layer and layer between the defects was set up under AM1.5G 1 standard solar lighting at an incident light power of 100 mW/cm2. The material defect was set as a neutral defect to ensure that the defect could generate SRH recombination without generating space charge because the charge recombination mode of DSSC was mainly SRH. The Poisson equation, carrier continuity equation and carrier drift diffusion equation were numerically solved by the software of SCAPS-1D. The influences of material thickness, operating temperature, series parallel resistance and back contact metal type on the DSSC photoelectric parameters were simulated, and the internal mechanism of the influences of various factors on the DSSC was analyzed.

Results and discussion

The open circuit voltage, short circuit current density and photoelectric conversion efficiency increase significantly, and the thickness continues to increase to 1000 nm, as well as the photoelectric parameters increase slowly when the thickness of the dye layer increases from 100 nm to 500 nm. The maximum photoelectric conversion efficiency can be obtained at the thickness of electron transport layer of 20 nm. The photoelectric conversion efficiency increases with the increase of hole transport layer thickness. The efficiency decreases with the increase of operating temperature, and the maximum photoelectric conversion efficiency is 15.17% at 300 K. The open circuit voltage and short circuit current density change little, and the filling factor and photoelectric conversion efficiency decrease when DSSC series resistance increases. The short circuit current density basically unchanges, and other parameters improve when the shunt resistance increases. The effect of changing the type of back contact metal on the photoelectric performance of DSSC is analyzed. The open circuit voltage, short circuit current density and photoelectric conversion efficiency all increase when the back contact metal work function value increases, and the maximum photoelectric conversion efficiency can be obtained when Au is used as the back contact metal.

Conclusions

The optimal thickness of dye layer was 500 nm, and the maximum photoelectric conversion efficiency could be obtained at the thickness of electron transport layer of 20 nm, and the photoelectric conversion efficiency increased with the thickness of hole transport layer. The maximum photoelectric conversion efficiency was 15.17% at the operating temperature of 300 K. The series parallel resistance had an important effect on the photoelectric performance of DSSC. The smaller the series resistance was, the larger the parallel resistance could be, for the improvement of the photoelectric conversion efficiency of DSSC. The electrical conversion efficiency increased when the back contact metal work function value increased, and the maximum photoelectric conversion efficiency could be obtained as Au was used as the back contact metal.

dye-sensitized solar cells  /  solid electrolyte  /  SCAPS-1D  /  series parallel resistance  /  back contact with metal  /  photoelectric conversion efficiency
程友良, 张忠宝. 固态染料敏化太阳能电池的模拟研究. 硅酸盐学报, 2025 , 53 (4) : 948 -957 . DOI: 10.14062/j.issn.0454-5648.20240601
Youliang CHENG, Zhongbao ZHANG. Simulation of Solid State Dye-Sensitized Solar Cells[J]. Journal of the Chinese Ceramic Society, 2025 , 53 (4) : 948 -957 . DOI: 10.14062/j.issn.0454-5648.20240601
  • 保定市科技计划基础研究专项(2372P014)
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doi: 10.14062/j.issn.0454-5648.20240601
  • 接收时间:2024-09-19
  • 首发时间:2026-10-22
  • 出版时间:2025-04-20
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  • 收稿日期:2024-09-19
  • 修回日期:2024-12-24
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保定市科技计划基础研究专项(2372P014)
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    1.华北电力大学动力工程系,河北 保定 071003
    2.华北电力大学河北省低碳高效发电技术重点实验室,河北 保定 071003
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2种不同金属材料的力学参数
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species
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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