Article(id=1320100086076518835, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320100076526097192, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20240129, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1708444800000, receivedDateStr=2024-02-21, revisedDate=1712592000000, revisedDateStr=2024-04-09, acceptedDate=null, acceptedDateStr=null, onlineDate=1792665986794, onlineDateStr=2026-10-22, pubDate=1729353600000, pubDateStr=2024-10-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792665986794, onlineIssueDateStr=2026-10-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792665986794, creator=13701087609, updateTime=1792665986794, updator=13701087609, issue=Issue{id=1320100076526097192, tenantId=1146029695717560320, journalId=1263187385517883426, year='2024', volume='52', issue='10', pageStart='3091', pageEnd='3348', issueExtLink='null', onlineDate='null', pubDate='1729353600000', pubDateStr='2024-10-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792665984517, creator='13701087609', updateTime=1792666283372, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1320101330077733325, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320100076526097192, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1320101330077733326, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1320100076526097192, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=3311, endPage=3326, ext={EN=ArticleExt(id=1320100086395285940, articleId=1320100086076518835, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Progress on Thermoelectric Cooling Materials, columnId=1263922772401635899, journalTitle=Journal of the Chinese Ceramic Society, columnName=Review, runingTitle=null, highlight=null, articleAbstract=

Conventional vapor compression cooling technologies become a challenge because of the high global warming risks. In addition, most of the refrigerant fluids working in vapor compression plants is environmentally harmful. The thermoelectric solid-state cooling is realized by electricity without mechanically moving parts or emissions, offering a sustainable solution to overcome the environmental pollution. However, the thermoelectric cooling efficiency is not competitive, compared with the conventional vapor compression cooling. To improve the efficiency of thermoelectric refrigeration and enhance the competitiveness of thermoelectric refrigeration technology, it is of great significance to develop high-performance thermoelectric refrigeration materials.

Recent research work fcous on the thermoelectric refrigeration materials like conventional Bi2Te3-based materials, Mg3(Sb, Bi)2-based materials, IV-VI semiconductors at near room temperature, and Bi1-xSbx, CsBi4Te6, FeSb2 alloys at low temperatures.

At near room temperatures, Bi2Te3-based alloy is a kind of conventional thermoelectric material, which has excellent thermoelectric properties. The zT value of Bi2Te3-based thermoelectric materials prepared by the Bridgman method or zone melting method is approximately 1. The thermoelectric properties of Bi2Te3-based alloys are greatly improved, and the zT value of Bi2Te3-based thermoelectric materials is increased based on developed concepts, mechanisms and preparation methods. The zT value of some p-type (Bi, Sb)2Te3 is >1.5. The zT value of some n-type Bi2(Te, Se)3 is >1. However, the crust abundance of Te is rather low, the tellurium resources are scattered and the cost is high. Mg3X2 (X=Sb, Bi) compound is a kind of layered Zintl phase, which has the characteristics of "phonon glass-electron crystal (PGEC)", non-toxicity and high abundance of constituent elements. Recent studies indicate that the band gap of Mg3(Sb, Bi)2 alloy decreases with the increase of Bi content, and the peak value of zT also moves to the near room temperature region. Bi-rich Mg3(Sb, Bi)2 alloy shows the excellent thermoelectric properties in the near room temperature region, which is comparable to the thermoelectric properties of conventional Bi2Te3-based materials. The IV-VI compounds such as SnSe have good mid-temperature thermoelectric properties and extremely competitive thermoelectric properties in the near room temperature region.

Bi1-xSbx is one of the low temperature thermoelectric materials, which has good thermoelectric properties in the temperatures below room temperature. Bi1-xSbx single crystal has good low temperature thermoelectric properties, but poor mechanical properties, which is easy to cleavage during use. In recent years, Bi1-xSbx polycrystalline materials are developed, whose the mechanical properties are better than those of single crystals, but the thermoelectric properties are difficult to reach the level of single crystals. CsBi4Te6 is a kind of p-type low-temperature thermoelectric material with the excellent properties, but in the preparation process, element Cs with an intense activity is usually used, and toxic formaldehyde is required for cleaning. FeSb2 is an only deep low-temperature thermoelectric material that shows a good prospect near 50 K, and its deep low-temperature electric transmission performance is excellent, but the thermal conductivity is high, and its deep low-temperature thermoelectric performance needs to be further investigated.

Summary and prospects

The thermoelectric cooling technology has a potential in the field of refrigeration for 5G chips, infrared detector, and temperature controlling, etc.. To improve the efficiency of thermoelectric refrigeration and enhance the competitiveness of thermoelectric refrigeration technology, it is of great significance to develop high-performance thermoelectric refrigeration materials. However, the refrigeration temperature of the first-stage refrigerator is 230 K based on commercial Bi2Te3-based alloy, and the refrigeration temperature of the multi-stage refrigerator is as low as 150 K, while the thermoelectric performance of the commercial Bi2Te3-based alloy is sharply reduced at below room temperature, which is difficult to meet the needs of low-temperature refrigeration. It is thus necessary to develop high-performance low-temperature thermoelectric cooling materials to meet the low-temperature refrigeration in the future.

, authors=Min ZHOU1, Haojian SU1, 2, Li SHI1, Laifeng LI1, authorsList=Min ZHOU, Haojian SU, Li SHI, Laifeng LI, authorCompany=null, correspAuthors=Li SHI, authorNote=

ZHOU Min (1976-), female, Ph.D., Professor. E-mail:

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SHI Li (1970-), female, Ph.D., Professor. E-mail:
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热电制冷是一种基于Peltier效应的新型固态制冷技术,具有体积小、重量轻、可靠性高、无机械运动部件等特点,在5G芯片制冷、红外探测器制冷、高精度温控等高科技和航空航天领域具有广阔的应用前景。近年来,对新型固态制冷技术的需求越来越迫切,热电制冷技术和热电制冷材料的研究引起越来越多的关注。简要介绍了热电制冷的基本原理,对热电制冷材料,包括近室温区热电材料,低温区热电材料等的研究现状进行了综述,分析了研究中存在的问题,并对未来的研究发展进行了展望。

, authors=周敏1, 苏浩健1, 2, 师莉1, 李来风1, authorsList=周敏, 苏浩健, 师莉, 李来风, authorCompany=null, correspAuthors=师莉, authorNote=

周敏(1976—),女,博士,研究员。

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师莉(1970—),女,博士,研究员。
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热电制冷材料研究进展
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周敏 1 , 苏浩健 1, 2 , 师莉 1 , 李来风 1
硅酸盐学报 | 综合评述 2024,52(10): 3311-3326
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热电制冷材料研究进展
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周敏1 , 苏浩健1, 2, 师莉1 , 李来风1
作者信息
  • 1.低温科学与技术重点实验室,中国科学院理化技术研究所,北京 100190
  • 2.中国科学院大学材料科学与光电技术学院,北京 100049
通讯作者:
师莉(1970—),女,博士,研究员。
作者简介:

周敏(1976—),女,博士,研究员。

Progress on Thermoelectric Cooling Materials
Min ZHOU1 , Haojian SU1, 2, Li SHI1 , Laifeng LI1
Affiliations
  • 1.Key Laboratory of Cryogenic Science and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 2.Centre of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Corresponding Author:
    SHI Li (1970-), female, Ph.D., Professor. E-mail:

    ZHOU Min (1976-), female, Ph.D., Professor. E-mail:

出版时间: 2024-10-20 doi: 10.14062/j.issn.0454-5648.20240129
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热电制冷是一种基于Peltier效应的新型固态制冷技术,具有体积小、重量轻、可靠性高、无机械运动部件等特点,在5G芯片制冷、红外探测器制冷、高精度温控等高科技和航空航天领域具有广阔的应用前景。近年来,对新型固态制冷技术的需求越来越迫切,热电制冷技术和热电制冷材料的研究引起越来越多的关注。简要介绍了热电制冷的基本原理,对热电制冷材料,包括近室温区热电材料,低温区热电材料等的研究现状进行了综述,分析了研究中存在的问题,并对未来的研究发展进行了展望。

热电制冷  /  热电材料  /  热电性能  /  热电优值

Conventional vapor compression cooling technologies become a challenge because of the high global warming risks. In addition, most of the refrigerant fluids working in vapor compression plants is environmentally harmful. The thermoelectric solid-state cooling is realized by electricity without mechanically moving parts or emissions, offering a sustainable solution to overcome the environmental pollution. However, the thermoelectric cooling efficiency is not competitive, compared with the conventional vapor compression cooling. To improve the efficiency of thermoelectric refrigeration and enhance the competitiveness of thermoelectric refrigeration technology, it is of great significance to develop high-performance thermoelectric refrigeration materials.

Recent research work fcous on the thermoelectric refrigeration materials like conventional Bi2Te3-based materials, Mg3(Sb, Bi)2-based materials, IV-VI semiconductors at near room temperature, and Bi1-xSbx, CsBi4Te6, FeSb2 alloys at low temperatures.

At near room temperatures, Bi2Te3-based alloy is a kind of conventional thermoelectric material, which has excellent thermoelectric properties. The zT value of Bi2Te3-based thermoelectric materials prepared by the Bridgman method or zone melting method is approximately 1. The thermoelectric properties of Bi2Te3-based alloys are greatly improved, and the zT value of Bi2Te3-based thermoelectric materials is increased based on developed concepts, mechanisms and preparation methods. The zT value of some p-type (Bi, Sb)2Te3 is >1.5. The zT value of some n-type Bi2(Te, Se)3 is >1. However, the crust abundance of Te is rather low, the tellurium resources are scattered and the cost is high. Mg3X2 (X=Sb, Bi) compound is a kind of layered Zintl phase, which has the characteristics of "phonon glass-electron crystal (PGEC)", non-toxicity and high abundance of constituent elements. Recent studies indicate that the band gap of Mg3(Sb, Bi)2 alloy decreases with the increase of Bi content, and the peak value of zT also moves to the near room temperature region. Bi-rich Mg3(Sb, Bi)2 alloy shows the excellent thermoelectric properties in the near room temperature region, which is comparable to the thermoelectric properties of conventional Bi2Te3-based materials. The IV-VI compounds such as SnSe have good mid-temperature thermoelectric properties and extremely competitive thermoelectric properties in the near room temperature region.

Bi1-xSbx is one of the low temperature thermoelectric materials, which has good thermoelectric properties in the temperatures below room temperature. Bi1-xSbx single crystal has good low temperature thermoelectric properties, but poor mechanical properties, which is easy to cleavage during use. In recent years, Bi1-xSbx polycrystalline materials are developed, whose the mechanical properties are better than those of single crystals, but the thermoelectric properties are difficult to reach the level of single crystals. CsBi4Te6 is a kind of p-type low-temperature thermoelectric material with the excellent properties, but in the preparation process, element Cs with an intense activity is usually used, and toxic formaldehyde is required for cleaning. FeSb2 is an only deep low-temperature thermoelectric material that shows a good prospect near 50 K, and its deep low-temperature electric transmission performance is excellent, but the thermal conductivity is high, and its deep low-temperature thermoelectric performance needs to be further investigated.

Summary and prospects

The thermoelectric cooling technology has a potential in the field of refrigeration for 5G chips, infrared detector, and temperature controlling, etc.. To improve the efficiency of thermoelectric refrigeration and enhance the competitiveness of thermoelectric refrigeration technology, it is of great significance to develop high-performance thermoelectric refrigeration materials. However, the refrigeration temperature of the first-stage refrigerator is 230 K based on commercial Bi2Te3-based alloy, and the refrigeration temperature of the multi-stage refrigerator is as low as 150 K, while the thermoelectric performance of the commercial Bi2Te3-based alloy is sharply reduced at below room temperature, which is difficult to meet the needs of low-temperature refrigeration. It is thus necessary to develop high-performance low-temperature thermoelectric cooling materials to meet the low-temperature refrigeration in the future.

thermoelectric cooling  /  thermoelectric material  /  thermoelectric performance  /  thermoelectric figure of merit
周敏, 苏浩健, 师莉, 李来风. 热电制冷材料研究进展. 硅酸盐学报, 2024 , 52 (10) : 3311 -3326 . DOI: 10.14062/j.issn.0454-5648.20240129
Min ZHOU, Haojian SU, Li SHI, Laifeng LI. Progress on Thermoelectric Cooling Materials[J]. Journal of the Chinese Ceramic Society, 2024 , 52 (10) : 3311 -3326 . DOI: 10.14062/j.issn.0454-5648.20240129
  • 国家自然科学基金面上项目(51872299)
  • 低温科学与技术重点实验室自主项目(CRYO20230203)
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doi: 10.14062/j.issn.0454-5648.20240129
  • 接收时间:2024-02-21
  • 首发时间:2026-10-22
  • 出版时间:2024-10-20
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  • 收稿日期:2024-02-21
  • 修回日期:2024-04-09
基金
国家自然科学基金面上项目(51872299)
低温科学与技术重点实验室自主项目(CRYO20230203)
作者信息
    1.低温科学与技术重点实验室,中国科学院理化技术研究所,北京 100190
    2.中国科学院大学材料科学与光电技术学院,北京 100049

通讯作者:

师莉(1970—),女,博士,研究员。
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2种不同金属材料的力学参数
科
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genus
种数
Number of
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占总种数比例
Percentage of
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属
Genus
种数
Number of
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占总种数比例
Percentage of total
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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