硅酸盐学报

面向可调谐微波应用的Ba_xSr_1-_xTiO₃铁电薄膜材料与器件研究进展

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沈德坤 ¹ , 杨淄涵 ¹^,² , 郭沛源 ¹ , 赵梦玲 ¹ , 葛健 ¹ , 邓功勋 ¹ , 王爱记 ¹

硅酸盐学报 | 综合评述 2024,52(1): 229-239

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硅酸盐学报 |综合评述 2024 , 52 (1) : 229 -239

面向可调谐微波应用的Ba_xSr_1-_xTiO₃铁电薄膜材料与器件研究进展

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沈德坤¹, 杨淄涵¹^,², 郭沛源¹, 赵梦玲¹, 葛健¹, 邓功勋¹, 王爱记¹

作者信息

^1．北京师范大学多尺度自旋物理教育部重点实验室，北京师范大学物理学系，北京 100875

^2．中国科学院物理研究所，北京 100190

通讯作者:

王爱记（1989—），男，博士，工程师。

作者简介:

沈德坤（2002—），男，本科生。

Research Progress on Ba_xSr_1-_xTiO₃ Ferroelectric Thin Film Materials and Devices for Tunable Microwave Applications

Dekun SHEN¹, Zihan YANG¹^,², Peiyuan GUO¹, Mengling ZHAO¹, Jian GE¹, Gongxun DENG¹, Aiji WANG¹

Affiliations

^1.Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing Normal University, Beijing 100865, China

^2.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Corresponding Author:

WANG Aiji (1989-), male, Ph.D., Engineer. E-mail: aijiwang@bnu.edu.cn

SHEN Dekun (2002-), male, Undergrduate. E-mail: 202011140034@mail.bnu.edu.cn

出版时间: 2024-01-20 doi: 10.14062/j.issn.0454-5648.20230518

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摘要

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可调谐微波器件是相控阵雷达和现代移动通信技术的重要技术核心，具有广阔的应用前景和市场需求。Ba_xSr_1-_xTiO₃铁电薄膜材料因其高介电可调性和快速的场响应而被认为是可调谐微波器件最有前途的材料之一。目前，人们对该材料降低介质损耗和提升介电可调性方面的研究取得了众多进展。综述了近年来国内外有关Ba_xSr_1-_xTiO₃铁电薄膜的介电性能研究以及其在可调谐微波器件的发展现状，并探讨了其研究中所存在的主要问题及未来研究重点。

关键词

钛酸锶钡 / 薄膜 / 介电性能 / 可调谐微波器件

Abstract

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Conventional metal materials affect the development of microwave integrated circuits, while the use of microwave electric materials can achieve the miniaturization and high-performance requirements. With the continuous exploration of modern microwave communication technology, microwave devices will face some opportunities and challenges like multi-frequency, and multi-mode capabilities. Tunable microwave devices are also an essential core of phased array radar and modern mobile technology, with the broad application prospects.

Ba_xSr_1-_xTiO₃ (BST) film material is considered as one of the most materials for tunable microwave devices due to its high dielectric tunability and low dielectric loss with a high figure of merit (FOM). However, BST thin film material still has some problems in applications, such as the synergistic optimization of tunability and dielectric loss, as well as temperature stability. To optimize the performance of films, the dielectric properties are adjusted through the improved preparation processes, annealing modification, controlled composition ratio, and doping modification as well. These optimization measures provide some opportunities for the design and preparation of microwave devices based on the BST films.

To investigate the dielectric properties of BST thin film, high-annealing in the preparation process can repair defects and improve grain growth, while controlling growth atmosphere can optimize the surface roughness and grain boundary characteristics of the film. Selecting appropriate substrates or inserting buffer to control stress can optimize the film structure and improve the dielectric performance. In addition, the Ba/Sr/Ti molar ratio regulation has a significant impact on the ferro-dielectric properties (i.e., the Curie temperature) of the film. The use of oxide molecular beam epitaxy (MBE) can achieve a better stoichiometric control and a low defect density. Doping regulation can change the lattice parameters and ion interactions of BST films. Some methods such as acceptor doping donor doping, and multicomponent doping are used. For instance, the FOM of La/Fe co-doped Ba_0.65Sr_0.35TiO₃ films prepared by a solid-phase reaction is increase by 5 times, compared to pure BST. The super lattice structures prepared by alternate doping and the multilayer films prepared by different material combinations indicate better comprehensive dielectric properties.

The BST thin film materials have nonlinear characteristics, in which the dielectric constant changes with the applied electric field, and these dielectric properties play an important role as parameter indicators in microwaveable devices. It is indicated that the oxide bottom electrode is of great significance to improve the performance of BST thin film variable capacitors in high-frequency applications. The BST film capacitors with SrMoO₃ (SMO) oxide was designed as a bottom electrode instead of conventional precious metal electrode materials, which avoids an acoustic resonance at high frequencies. Using the BST tunable filters instead of conventional filters composed of multiple filters is more in line with the needs of miniaturized and integrated devices in radar and communication fields. However, current research is limited due to the high insertion losses in practical devices, and reducing the insertion losses remains an important issue for BST-based microwave devices. Some phase shifters made using BST films were reported, demonstrating a large phase shift range and a high figure-of-merit, and achieving continuous tunable phase shift capability at different frequency ranges. Film phase shifters are applied in antenna arrays and end-fire arrays, realizing radiation directionality steering and linear beam scanning, thus promoting the development of radar and antenna systems. The power oscillators using BST films and single-chip AlGaN/GaN high electron mobility transistors voltage controlled oscillator were reported, showing the potential of BST films in the field of microwave oscillators.

Summary and prospects

The dielectric properties were reduced via optimizing film growth conditions. However, some related problems were not solved, i.e., decoupling the physical mechanism of dielectric tunability and dielectric loss, and the optimization of high-frequency film dielectric performance testing and extraction. In terms of microwave devices, more efforts need to be made in microwave device design, simulation, preparation, and testing. In summary, to commercialize ferroelectric thin film-based tunable microwave devices, we need to clarify the physical mechanisms of thin film dielectric properties, optimize the growth conditions preparation processes (i.e., synergistic optimization of dielectric tunability and dielectric loss), and obtain high-quality films, thus laying a foundation for the application prospects of tunable microwave devices.

Key words

barium strontium titanate / thin film / dielectric properties / tunable microwave device

引用本文

沈德坤, 杨淄涵, 郭沛源, 赵梦玲, 葛健, 邓功勋, 王爱记. 面向可调谐微波应用的Ba_xSr_1-_xTiO₃铁电薄膜材料与器件研究进展. 硅酸盐学报, 2024 , 52 (1) : 229 -239 . DOI: 10.14062/j.issn.0454-5648.20230518

Dekun SHEN, Zihan YANG, Peiyuan GUO, Mengling ZHAO, Jian GE, Gongxun DENG, Aiji WANG. Research Progress on Ba_xSr_1-_xTiO₃ Ferroelectric Thin Film Materials and Devices for Tunable Microwave Applications[J]. Journal of the Chinese Ceramic Society, 2024 , 52 (1) : 229 -239 . DOI: 10.14062/j.issn.0454-5648.20230518

基金

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国家重点研发计划(2021YFA0718700)

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2024年第52卷第1期

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文章信息

doi: 10.14062/j.issn.0454-5648.20230518

接收时间：2023-07-22
首发时间：2026-10-22
出版时间：2024-01-20

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收稿日期：2023-07-22
修回日期：2023-08-27

基金

国家重点研发计划(2021YFA0718700)

作者信息

^1．北京师范大学多尺度自旋物理教育部重点实验室，北京师范大学物理学系，北京 100875

^2．中国科学院物理研究所，北京 100190

通讯作者:

王爱记（1989—），男，博士，工程师。

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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