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The effect of Er₂O₃ doping on the microstructure and electrical properties of ZnO-Bi₂O₃-Sb₂O₃-Co₂O₃-MnO₂-Cr₂O₃-SiO₂ varistor was investigated. A part of Er is dissolved in the Bi-rich phase as doping Er₂O₃, which has a great influence on the grain boundary characteristics and electrical properties of ZnO varistors. The grain boundary resistivity decreases, the leakage current density increases, the double Schottky grain boundary barrier height and the nonlinear coefficient firstly increase and then decrease, and the breakdown field strength increases with increasing Er₂O₃ content from 0.09% to 0.35% (in mass fraction). The ZnO varistors obtained have a nonlinear coefficient of 54.4±1.5, a breakdown field strength of (470.1±2.8) V·mm^-1, a leakage current density of (1.9±0.1) μA·cm^-2, and a loss tangent of less than 0.03 at Er₂O₃ doping content of 0.27%, showing the optimum comprehensive electrical properties. The standard deviation of the performance parameters is small, indicating that the samples have a good reproducibility. This work provides a reference for the preparation of Er₂O₃-doped ZnO varistor ceramics with the excellent performance.

, authors=Linxue WANG, Nenghui ZHAO, Jinfeng SU, Wenbin CAO, authorsList=Linxue WANG, Nenghui ZHAO, Jinfeng SU, Wenbin CAO, authorCompany=null, correspAuthors=null, authorNote=, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1318977207159079621, articleId=1318977206714483395, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=Er₂O₃掺杂ZnO压敏陶瓷的制备及其电学性能, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=

研究了Er₂O₃掺杂对ZnO-Bi₂O₃-Sb₂O₃-Co₂O₃-MnO₂-Cr₂O₃-SiO₂压敏陶瓷微观结构和电学性能的影响。Er₂O₃掺杂后，部分Er固溶于富Bi相中，对ZnO压敏陶瓷的晶界特性和电学性能产生了较大影响。随着Er₂O₃掺杂量从0.09%（质量分数）增大到0.35%，样品晶界电阻率不断减小，漏电流密度不断增大，双Schottky晶界势垒高度和非线性系数先增大后减小，击穿场强不断增大；当Er₂O₃掺杂量为0.27%时，所得ZnO压敏陶瓷非线性系数达到54.4±1.5，击穿场强为（470.1±2.8） V·mm^-1，漏电流密度为（1.9±0.1） μA·cm^-2，损耗角正切tanδ始终小于0.03，样品综合电学性能最优，性能参数标准偏差均较小，说明样品具有较好的制备可重复性，为Er₂O₃掺杂高性能ZnO压敏陶瓷的制备提供了借鉴。

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王林雪（1991—），女，博士，讲师。

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