硅酸盐学报

Pt/Ga₂O₃/Nb：SrTiO₃光电器件的自驱动光响应及阻变效应

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张腾 ¹ , 张源 ¹ , 任达华 ¹ , 李强 ¹ , 余基映 ¹ , 周金能 ² , 易金桥 ¹

硅酸盐学报 | 研究论文 2024,52(1): 161-169

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硅酸盐学报 |研究论文 2024 , 52 (1) : 161 -169

Pt/Ga₂O₃/Nb：SrTiO₃光电器件的自驱动光响应及阻变效应

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张腾¹, 张源¹, 任达华¹, 李强¹, 余基映¹, 周金能², 易金桥¹

作者信息

^1．湖北民族大学智能科学与工程学院，湖北恩施 445000

^2．华芯科技（恩施）有限公司，湖北恩施 445000

通讯作者:

易金桥（1979—），男，博士，教授。

作者简介:

张腾（1987—），男，博士，实验师。

Self-Driven Photoresponse and Resistive Switching Effects of Pt/Ga₂O₃/Nb:SrTiO₃ Optoelectronic Devices

Teng ZHANG¹, Yuan ZHANG¹, Dahua REN¹, Qiang LI¹, Jiying YU¹, Jinneng ZHOU², Jinqiao YI¹

Affiliations

^1.College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, Hubei, China

^2.HuaXin Technology (Enshi) Co., Ltd., Enshi 445000, Hubei, China

Corresponding Author:

YI Jinqiao (1979-), male, Ph.D., Professor. E-mail: 2014017@hbmzu.edu.cn

ZHANG Teng (1987-), male, Ph.D., Experimentalist. E-mail: hbmyzt@hbmzu.edu.cn

出版时间: 2024-01-20 doi: 10.14062/j.issn.0454-5648.20230250

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摘要

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为了构筑光传感和阻变一体化光电器件，利用脉冲激光沉积法制备兼具稳定自驱动光响应和电致阻变特性的Pt/Ga₂O₃/Nb∶SrTiO₃光电器件，研究了器件的光响应机制与阻变机理。在0 V偏压下，器件具有快速的紫外光响应特性（τ_r/τ_d=60 ms/120 ms），峰值光响应度达13.4 mA/W（λ=250 nm）。上述自驱动光响应被归因于Pt/Ga₂O₃界面形成的Schottky结内建电场对光生载流子的高效分离作用。同时，器件呈现稳定的双极性阻变行为，高/低阻值变换比约为10⁴，通过施加不同的脉冲电压可实现多阻态间的快速切换，且具有良好的抗疲劳和保持特性。器件的多级阻变效应主要来源于载流子注入和氧空位陷阱中心束缚/解束缚对Schottky势垒的调控作用。以上研究对于开发新型Ga₂O₃基多功能光电器件具有指导意义。

关键词

宽禁带半导体 / 氧化镓薄膜 / 紫外光响应 / 电致阻变效应

Abstract

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Introduction

Ga₂O₃ is an ultra-wide bandgap semiconductor, which has a direct bandgap of 4.9 eV. Also, it has the superior thermodynamic and chemical stability, making it suitable for the development of deep ultraviolet optoelectronic devices. Ga₂O₃ exhibits the superior photosensitive and resistive properties, which has a promising application in sensor-memory integrated optoelectronic devices. In this paper, the crystal structure, composition, and morphology of the Ga₂O₃ thin film grown via pulsed laser deposition (PLD) was discussed, and then an optoelectronic device with Pt/Ga₂O₃/NSTO/In structure was designed and constructed. The physical mechanism of the Ga₂O₃-based device was investigated. The device process was optimized to achieve both high sensitivity ultraviolet photo-response and stable resistive switching characteristics. This work can provide theoretical guidance and technical support for the development of novel Ga₂O₃-based multifunctional optoelectronic devices.

Methods

Ga₂O₃ thin films were grown on (100) Nd∶ SrTiO₃ (NSTO) substrates by the PLD method. The target material used was a pure Ga₂O₃ ceramic target prepared by a solid-state method. Before thin film deposition, the ceramic target was pre-ablated for 3 min to remove surface contaminants. The film deposition was performed at pulse laser energy of 300 mJ, O₂ partial pressure of 3.0 Pa, and substrate temperature of 650 ℃. The target rotation speed was 5 r/min, the substrate rotation speed was 10 r/min, the pulse laser frequency was 5 Hz, and the deposition time was 30 min. Based on the deposited Ga₂O₃ thin films, a device with metal/Ga₂O₃/electrode sandwich structure was further constructed. At room temperature, Pt metal dot electrodes were fabricated on the surface of Ga₂O₃ thin films by a DC magnetron sputtering method as a top electrode of the device, and then weld the metal indium (In) directly onto the back of the NSTO substrate as a bottom contact electrode. The above Pt metal electrode preparation process was run at DC source power of 100 W, working pressure of 1.5 Pa, Ar flow rate of 10 mL/min, substrate rotation of 10 r/min, and sputtering time of 60 s.

The structure of Ga₂O₃ thin films was characterized by a model D8 Discover type high-resolution four circle single crystal X-ray diffractometer. The elemental composition of Ga₂O₃ thin film material was analyzed by a model Escalab 250Xi X-ray photoelectron spectroscope. The surface and cross-sectional morphology of the films was characterized by a model Sigma 500 field emission scanning electron microscope. A semiconductor electrical performance testing system was constructed by a model Keithley 2635 digital source meter, probe station, and electromagnetic shielding dark box, to examine the I-V scanning loop, multi-level resistive state, retention, and fatigue resistance characteristics of the device. A 255 nm LED light source was driven by a digital signal generator to test the time-dependent UV photoresponse characteristics. A Omni-λ 3027 setup consisting of monochromator, 150 W xenon lamp light source, chopper, collimating light converter, and phase-locked amplifier, was utilized to measure the dark current, spectral response, UV-visible suppression ratio, and detectivity of the photodetector.

Results and discussion

The deposited β-Ga₂O₃ film with small particles and a flat and dense surface exhibits (004) plane preferential orientation. The Pt/Ga₂O₃/NSTO/In device with both fast self-driven ultraviolet photoresponse and stable resistive switching characteristics was fabricated. Under illumination, the photocurrent of the device rapidly increases to its maximum value and then gradually decreases to a steady state possibly due to the reduction in the Schottky junction built-in electric field caused by the injection of photogenerated carriers into the barrier region. The self-driven photoresponse is attributed to the efficient separation of photo-generated carriers by a built-in electric field formed at the Pt/Ga₂O₃ interface. On the other side, the device exhibits a stable bipolar resistive switching behavior. Alternating -5 V and +3 V pulse voltages with a 10 ms pulse width results in a resistive switching ratio of nearly 10⁴. A rapid switching between multi-level resistance states occurs at different pulse voltages. The intrinsic oxygen vacancy defect in Ga₂O₃ thin film as the trap center dominates the capture/release process of charge carriers, thereby maintaining the resistance state. Changing the pulse voltage can control the amount of electron injection, thus affecting the height of the interface barrier, which can explain the multi-level resistive characteristics of the device. The resistance state shows a good retention, and there is no significant degradation within 10⁴ s, showing the nonvolatile characteristics. In addition, the device also exhibits stable and fast switching characteristics after multiple repeats, indicating potential applications in memory devices. The mechanism of resistive switching effect can be attributed to the interface type resistance mechanism. The variation of the Schottky barrier caused by external electrical injection and the carrier trapping/detrapping process caused by the oxygen vacancy defect trap center jointly determine the resistive switching effect.

Conclusions

The fabricated device had a fast UV photoresponse (τ_r/τ_d=60 ms/120 ms) with a peak responsivity of 13.4 mA/W and 1.49×10¹¹ Jones (λ=250 nm) at 0 V bias. According to the analysis, the Schottky contact formed at the Pt/Ga₂O₃ interface resulted in a fast self-driven photoresponse at 0 V bias. In addition, the fabricated device also exhibited a stable bipolar resistive switching behavior with a high/low resistance ratio of 10⁴. The fast switching between multiple resistance state was achieved with the superior anti-fatigue and retention characteristics at different pulse voltages. The external electric field and oxygen-vacancy trap centers was considered as the main origin of resistive switching effect in Ga₂O₃-based optoelectronic device.

Key words

wide-bandgap semiconductors / gallium oxide thin film / ultra-violet photoresponse / resistive switching effect

引用本文

张腾, 张源, 任达华, 李强, 余基映, 周金能, 易金桥. Pt/Ga₂O₃/Nb：SrTiO₃光电器件的自驱动光响应及阻变效应. 硅酸盐学报, 2024 , 52 (1) : 161 -169 . DOI: 10.14062/j.issn.0454-5648.20230250

Teng ZHANG, Yuan ZHANG, Dahua REN, Qiang LI, Jiying YU, Jinneng ZHOU, Jinqiao YI. Self-Driven Photoresponse and Resistive Switching Effects of Pt/Ga₂O₃/Nb:SrTiO₃ Optoelectronic Devices[J]. Journal of the Chinese Ceramic Society, 2024 , 52 (1) : 161 -169 . DOI: 10.14062/j.issn.0454-5648.20230250

基金

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湖北省自然科学基金(2022CFB758)
湖北省教育厅青年人才项目(Q20211906)
湖北民族大学青年科研项目(MY2018Q020)
恩施州青年人才项目(D20220066)
国家自然科学基金(11964009)

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2024年第52卷第1期

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文章信息

doi: 10.14062/j.issn.0454-5648.20230250

接收时间：2023-04-16
首发时间：2026-10-22
出版时间：2024-01-20

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出版历史

收稿日期：2023-04-16
修回日期：2023-06-01

基金

湖北省自然科学基金(2022CFB758)

湖北省教育厅青年人才项目(Q20211906)

湖北民族大学青年科研项目(MY2018Q020)

恩施州青年人才项目(D20220066)

国家自然科学基金(11964009)

作者信息

^1．湖北民族大学智能科学与工程学院，湖北恩施 445000

^2．华芯科技（恩施）有限公司，湖北恩施 445000

通讯作者:

易金桥（1979—），男，博士，教授。

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https://castjournals.cast.org.cn/joweb/gsyxb/CN/10.14062/j.issn.0454-5648.20230250

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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