Article(id=1319222717304390537, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222716851405704, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20220972, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1668096000000, receivedDateStr=2022-11-11, revisedDate=1669910400000, revisedDateStr=2022-12-02, acceptedDate=null, acceptedDateStr=null, onlineDate=1792456805777, onlineDateStr=2026-10-20, pubDate=1687190400000, pubDateStr=2023-06-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792456805777, onlineIssueDateStr=2026-10-20, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792456805777, creator=13701087609, updateTime=1792456805777, updator=13701087609, issue=Issue{id=1319222716851405704, tenantId=1146029695717560320, journalId=1263187385517883426, year='2023', volume='51', issue='6', pageStart='1373', pageEnd='1648', issueExtLink='null', onlineDate='null', pubDate='1687190400000', pubDateStr='2023-06-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=0, createTime=1792456805669, creator='13701087609', updateTime=1792456995739, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1319223514108903801, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222716851405704, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1319223514108903802, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222716851405704, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=1406, endPage=1411, ext={EN=ArticleExt(id=1319222717518300042, articleId=1319222717304390537, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Low Angle Grain Boundaries in β-Ga₂O₃ Crystal Grown by EFG Method, columnId=1321890965510538116, journalTitle=Journal of the Chinese Ceramic Society, columnName=Special Topics Progress of Fundamental Research of Crystal Structures and Defects—Research Articles, runingTitle=null, highlight=null, articleAbstract=

β-Ga₂O₃ is one of the most promising ultrawide band-gap semiconductor materials, but its crystal defects are not investigated comprehensively. The low angle grain boundaries of β-Ga₂O₃ crystal mainly exists in (100) plane. The existence of low angle boundary can destroy the integrity of the crystal structure and reduce the quality of crystal. The macroscopic analysis and microstructure characterization of the low angle grain boundaries in the β-Ga₂O₃ crystal grown by edge-defined film-fed growth method were carried out by chemical etching analysis and transmission electron microscopy. The results show that the shape and orientation of the etch pits on both sides of the low angle grain boundary are consistent, and the misorientation angle of the low angle grain boundary is 3°. In addition, the low angle grain boundary can cause the double peaks and broadening in the X-ray rocking curve. The gap in the study of low angle grain boundary is filled based on the characterization of the microstructure of low angle grain boundary in β-Ga₂O₃ crystals.

, authors=Pei WANG¹, Wenxiang MU¹, Tong HOU¹, Zhitai JIA^{1, 2}, Xutang TAO¹, authorsList=Pei WANG, Wenxiang MU, Tong HOU, Zhitai JIA, Xutang TAO, authorCompany=null, correspAuthors=Wenxiang MU, Zhitai JIA, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1319222717803512715, articleId=1319222717304390537, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=导模法生长β-Ga₂O₃晶体中的小角晶界, columnId=1321890966106129285, journalTitle=硅酸盐学报, columnName=晶体结构与缺陷相关基础研究进展专题—研究论文, runingTitle=null, highlight=null, articleAbstract=

β-Ga₂O₃作为最具发展潜力的超宽禁带半导体材料，其晶体缺陷方面还缺乏深入且全面的研究。面缺陷小角晶界主要存在于β-Ga₂O₃（100）晶面，会破坏晶体结构完整性，降低晶体质量。采用化学刻蚀法和透射电子显微镜技术对导模法生长β-Ga₂O₃晶体中的小角晶界进行宏观分析和微观结构表征。研究表明：小角晶界两侧的刻蚀坑形状和朝向相同，晶界两侧的晶粒取向差约为3°，除此之外，小角晶界会使摇摆曲线出现肩峰及展宽，通过对β-Ga₂O₃晶体中小角晶界缺陷的微观结构进行表征，填补了小角晶界缺陷的研究空白。

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