Article(id=1319222643828572313, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222570398888648, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20220932, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1667059200000, receivedDateStr=2022-10-30, revisedDate=1669478400000, revisedDateStr=2022-11-27, acceptedDate=null, acceptedDateStr=null, onlineDate=1792456788259, onlineDateStr=2026-10-20, pubDate=1679241600000, pubDateStr=2023-03-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792456788259, onlineIssueDateStr=2026-10-20, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792456788259, creator=13701087609, updateTime=1792456788259, updator=13701087609, issue=Issue{id=1319222570398888648, tenantId=1146029695717560320, journalId=1263187385517883426, year='2023', volume='51', issue='3', pageStart='561', pageEnd='830', issueExtLink='null', onlineDate='null', pubDate='1679241600000', pubDateStr='2023-03-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=0, createTime=1792456770752, creator='13701087609', updateTime=1792456924637, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1319223215889699377, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222570398888648, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1319223215889699378, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319222570398888648, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=767, endPage=774, ext={EN=ArticleExt(id=1319222644126367898, articleId=1319222643828572313, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=YAG Crystal Lapping Process and Subsurface Damage After Lapping, columnId=1263922769897599102, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Articles, runingTitle=null, highlight=null, articleAbstract=

YAG crystal is a typical hard and brittle material with Mohs hardness of 8.5 and insoluble in any acid or base at room temperature, so it is difficult to process. A step-by-step lapping process is proposed in order to explore lapping processing of YAG crystals in this paper. Based on the method of free abrasive lapping, the particle size of boron carbide (B4C) abrasive was reduced step by step during the lapping process, and abrasive W40, abrasive W28, abrasive W14 and abrasive W7 abrasives were selected for lapping in steps, and the particle size ranges of the four abrasive abrasives were: 40-28 μm, 28-20 μm, 14-10 μm, and 7-5 μm in order. The effect of the lapping pressure, the rotational speed of the lapping disc and pendulum, and the B4C mass fraction in the lapping solution on the lapping effect in each lapping step was investigated, and the optimal lapping parameters were derived; the depth of subsurface damage after lapping of YAG crystals was measured by cross-section microscopy method to determine the amount of subsequent polishing removal, and the relationship between the depth of subsurface damage hSSD and the surface roughness Ra after lapping was investigated. The study showed that the best lapping results were obtained for each lapping step when the lapping pressure was 44.54 kPa, the rotational speed of the lapping disc and pendulum was 60 r/min, and the B4C mass fraction in the lapping solution was 15%. The material removal rates of abrasive W40, abrasive W28, abrasive W14 and abrasive W7 lapping were 83.12, 57.32, 27.54 and 9.53 μm/min, respectively, and the surface roughness after lapping was 0.763, 0.489, 0.264, and 0.142 μm, respectively. The subsurface damage of the step-by-step lapping was 3.041 μm, which were measured by cross-section microscopy method, and needed to be removed by the subsequent polishing; The relationship between subsurface damage depth and surface roughness of YAG crystals after lapping with this lapping parameter is hSSD=41.46×Ra4/3. The study can provide guidance for the actual processing and production of YAG crystal components.

, authors=Rongguo MA1, 2, 3, Qingli ZHANG1, 3, Jinyun GAO1, 3, Guihua SUN1, 3, Renqin DOU1, 3, Song HAN1, 3, Rui ZHANG1, 3, Zhao CHEN1, 2, 3, Xiaofei WANG1, 3, Deming ZHANG1, 3, Yu SUN1, 3, Wenpeng LIU1, 3, authorsList=Rongguo MA, Qingli ZHANG, Jinyun GAO, Guihua SUN, Renqin DOU, Song HAN, Rui ZHANG, Zhao CHEN, Xiaofei WANG, Deming ZHANG, Yu SUN, Wenpeng LIU, authorCompany=null, correspAuthors=Qingli ZHANG, authorNote=

MA Rongguo (1997-), male, Doctoral candidate. E-mail:

, correspAuthorsNote=
ZHANG Qingli (1973-), male, Ph.D., Professor. E-mail:
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YAG晶体是一种典型硬脆材料,莫氏硬度达8.5,常温下不溶于任何酸碱,加工难度较大。针对YAG晶体研磨加工,本工作提出一种分步研磨工艺。基于游离磨料研磨的方法,在研磨过程中逐级减小碳化硼(B4C)磨料粒径,选用磨料W40、磨料W28、磨料W14、磨料W7分步骤研磨,4种磨料的粒度范围依次为:40~28 μm、28~20 μm、14~10 μm、7~5 μm。通过研磨参数试验研究了每个步骤中研磨压力、研磨盘和摆轴转速、研磨液中B4C质量分数等参数对研磨效果的影响,得出最佳研磨参数;通过截面显微法测量出YAG晶体研磨后亚表面损伤的深度,确定后续抛光去除量,并探究了亚表面损伤深度hSSD与研磨后表面粗糙度Ra的关系。研究表明:当研磨压力为44.54 kPa、研磨盘和摆轴转速为60 r/min、研磨液中B4C质量分数为15%时,每个研磨步骤均取得最好研磨效果:磨料W40、磨料W28、磨料W14、磨料W7研磨的材料去除率分别为83.12、57.32、27.54、9.53 μm/min,研磨后表面粗糙度Ra分别为0.763、0.489、0.264、0.142 μm。截面显微法测量得出分步研磨后产生的亚表面损伤深度为3.041 μm,需要在后续抛光中去除;此研磨参数下YAG晶体研磨后亚表面损伤深度与表面粗糙度的关系为:hSSD=41.46×Ra4/3,该研究可为YAG晶体元件的实际加工生产提供指导。

, authors=马荣国1, 2, 3, 张庆礼1, 3, 高进云1, 3, 孙贵花1, 3, 窦仁勤1, 3, 韩松1, 3, 张瑞1, 3, 陈照1, 2, 3, 王小飞1, 3, 张德明1, 3, 孙彧1, 3, 刘文鹏1, 3, authorsList=马荣国, 张庆礼, 高进云, 孙贵花, 窦仁勤, 韩松, 张瑞, 陈照, 王小飞, 张德明, 孙彧, 刘文鹏, authorCompany=null, correspAuthors=张庆礼, authorNote=

马荣国(1997—),男,博士研究生。

, correspAuthorsNote=
张庆礼(1973—),男,博士,研究员。
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2.University of Science and Technology of China, Hefei 230026, China
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马荣国(1997—),男,博士研究生。

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YAG晶体研磨工艺与研磨后亚表面损伤研究
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马荣国 1, 2, 3 , 张庆礼 1, 3 , 高进云 1, 3 , 孙贵花 1, 3 , 窦仁勤 1, 3 , 韩松 1, 3 , 张瑞 1, 3 , 陈照 1, 2, 3 , 王小飞 1, 3 , 张德明 1, 3 , 孙彧 1, 3 , 刘文鹏 1, 3
硅酸盐学报 | 研究论文 2023,51(3): 767-774
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硅酸盐学报 |研究论文 2023 , 51 (3) : 767 -774
YAG晶体研磨工艺与研磨后亚表面损伤研究
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马荣国1, 2, 3 , 张庆礼1, 3 , 高进云1, 3, 孙贵花1, 3, 窦仁勤1, 3, 韩松1, 3, 张瑞1, 3, 陈照1, 2, 3, 王小飞1, 3, 张德明1, 3, 孙彧1, 3, 刘文鹏1, 3
作者信息
  • 1.中国科学院合肥物质科学研究院,安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,合肥 230031
  • 2.中国科学技术大学,合肥 230026
  • 3.先进激光技术安徽省实验室,合肥 230037
通讯作者:
张庆礼(1973—),男,博士,研究员。
作者简介:

马荣国(1997—),男,博士研究生。

YAG Crystal Lapping Process and Subsurface Damage After Lapping
Rongguo MA1, 2, 3 , Qingli ZHANG1, 3 , Jinyun GAO1, 3, Guihua SUN1, 3, Renqin DOU1, 3, Song HAN1, 3, Rui ZHANG1, 3, Zhao CHEN1, 2, 3, Xiaofei WANG1, 3, Deming ZHANG1, 3, Yu SUN1, 3, Wenpeng LIU1, 3
Affiliations
  • 1.The Key Laboratory of Photonic Devices and Materials of Anhui Province, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
  • 2.University of Science and Technology of China, Hefei 230026, China
  • 3.Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China
  • Corresponding Author:
    ZHANG Qingli (1973-), male, Ph.D., Professor. E-mail:

    MA Rongguo (1997-), male, Doctoral candidate. E-mail:

出版时间: 2023-03-20 doi: 10.14062/j.issn.0454-5648.20220932
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YAG晶体是一种典型硬脆材料,莫氏硬度达8.5,常温下不溶于任何酸碱,加工难度较大。针对YAG晶体研磨加工,本工作提出一种分步研磨工艺。基于游离磨料研磨的方法,在研磨过程中逐级减小碳化硼(B4C)磨料粒径,选用磨料W40、磨料W28、磨料W14、磨料W7分步骤研磨,4种磨料的粒度范围依次为:40~28 μm、28~20 μm、14~10 μm、7~5 μm。通过研磨参数试验研究了每个步骤中研磨压力、研磨盘和摆轴转速、研磨液中B4C质量分数等参数对研磨效果的影响,得出最佳研磨参数;通过截面显微法测量出YAG晶体研磨后亚表面损伤的深度,确定后续抛光去除量,并探究了亚表面损伤深度hSSD与研磨后表面粗糙度Ra的关系。研究表明:当研磨压力为44.54 kPa、研磨盘和摆轴转速为60 r/min、研磨液中B4C质量分数为15%时,每个研磨步骤均取得最好研磨效果:磨料W40、磨料W28、磨料W14、磨料W7研磨的材料去除率分别为83.12、57.32、27.54、9.53 μm/min,研磨后表面粗糙度Ra分别为0.763、0.489、0.264、0.142 μm。截面显微法测量得出分步研磨后产生的亚表面损伤深度为3.041 μm,需要在后续抛光中去除;此研磨参数下YAG晶体研磨后亚表面损伤深度与表面粗糙度的关系为:hSSD=41.46×Ra4/3,该研究可为YAG晶体元件的实际加工生产提供指导。

钇铝石榴石晶体  /  研磨  /  亚表面损伤  /  材料去除率  /  表面粗糙度

YAG crystal is a typical hard and brittle material with Mohs hardness of 8.5 and insoluble in any acid or base at room temperature, so it is difficult to process. A step-by-step lapping process is proposed in order to explore lapping processing of YAG crystals in this paper. Based on the method of free abrasive lapping, the particle size of boron carbide (B4C) abrasive was reduced step by step during the lapping process, and abrasive W40, abrasive W28, abrasive W14 and abrasive W7 abrasives were selected for lapping in steps, and the particle size ranges of the four abrasive abrasives were: 40-28 μm, 28-20 μm, 14-10 μm, and 7-5 μm in order. The effect of the lapping pressure, the rotational speed of the lapping disc and pendulum, and the B4C mass fraction in the lapping solution on the lapping effect in each lapping step was investigated, and the optimal lapping parameters were derived; the depth of subsurface damage after lapping of YAG crystals was measured by cross-section microscopy method to determine the amount of subsequent polishing removal, and the relationship between the depth of subsurface damage hSSD and the surface roughness Ra after lapping was investigated. The study showed that the best lapping results were obtained for each lapping step when the lapping pressure was 44.54 kPa, the rotational speed of the lapping disc and pendulum was 60 r/min, and the B4C mass fraction in the lapping solution was 15%. The material removal rates of abrasive W40, abrasive W28, abrasive W14 and abrasive W7 lapping were 83.12, 57.32, 27.54 and 9.53 μm/min, respectively, and the surface roughness after lapping was 0.763, 0.489, 0.264, and 0.142 μm, respectively. The subsurface damage of the step-by-step lapping was 3.041 μm, which were measured by cross-section microscopy method, and needed to be removed by the subsequent polishing; The relationship between subsurface damage depth and surface roughness of YAG crystals after lapping with this lapping parameter is hSSD=41.46×Ra4/3. The study can provide guidance for the actual processing and production of YAG crystal components.

yttrium aluminum garnet crystal  /  lapping  /  subsurface damage  /  material removal rate  /  surface roughness
马荣国, 张庆礼, 高进云, 孙贵花, 窦仁勤, 韩松, 张瑞, 陈照, 王小飞, 张德明, 孙彧, 刘文鹏. YAG晶体研磨工艺与研磨后亚表面损伤研究. 硅酸盐学报, 2023 , 51 (3) : 767 -774 . DOI: 10.14062/j.issn.0454-5648.20220932
Rongguo MA, Qingli ZHANG, Jinyun GAO, Guihua SUN, Renqin DOU, Song HAN, Rui ZHANG, Zhao CHEN, Xiaofei WANG, Deming ZHANG, Yu SUN, Wenpeng LIU. YAG Crystal Lapping Process and Subsurface Damage After Lapping[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (3) : 767 -774 . DOI: 10.14062/j.issn.0454-5648.20220932
  • 国家自然科学基金(51802307)
  • 先进激光技术安徽省实验室开放研究基金项目(AHL20220ZR04; AHL2021KF07)
  • 安徽省科技重大专项项目(202203a05020002)
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2023年第51卷第3期
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doi: 10.14062/j.issn.0454-5648.20220932
  • 接收时间:2022-10-30
  • 首发时间:2026-10-20
  • 出版时间:2023-03-20
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  • 收稿日期:2022-10-30
  • 修回日期:2022-11-27
基金
国家自然科学基金(51802307)
先进激光技术安徽省实验室开放研究基金项目(AHL20220ZR04; AHL2021KF07)
安徽省科技重大专项项目(202203a05020002)
作者信息
    1.中国科学院合肥物质科学研究院,安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,合肥 230031
    2.中国科学技术大学,合肥 230026
    3.先进激光技术安徽省实验室,合肥 230037

通讯作者:

张庆礼(1973—),男,博士,研究员。
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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