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The ZnO-Pr₆O₁₁-Co₂O₃-Cr₂O₃-Er₂O₃-SiO₂ varistors were prepared by a solid-state sintering method. The effect of SiO₂ doping on the phase, microstructure, varistor property, and impedance characteristic of the ZnO varistors was investigated. The results show that the grain size decreases gradually with the increase of SiO₂ content due to the restraining effect of grain growth in SiO₂. The ZnO varistor with SiO₂ content of 1.0% (in mole fraction) has an optimum overall performance to provide overvoltage protection for circuit (i.e., the most second phase generated, the maximum breakdown voltage of 435.5 V/mm, the maximum mean grain boundary voltage of 1.63 V, the maximum nonlinear coefficient of 17.5, and the maximum resistivity of grain boundary of 17 400 MΩ·cm, the maximum barrier height of grain boundary of 0.37 eV, and the minimum leak current of 1 μA, respectively). The breakdown voltage and nonlinear coefficient of ZnO varistor with SiO₂ content of 1.0% are 3.6 and 6.6 times greater than those of ZnO varistor without SiO₂.

, authors=Qiao ZHU, Wenbin CAO, authorsList=Qiao ZHU, Wenbin CAO, authorCompany=null, correspAuthors=null, authorNote=, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1319237190652117166, articleId=1319237190127829164, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=SiO₂掺杂对ZnO-Pr₆O₁₁基压敏陶瓷电学性能的影响, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=

采用固相烧结法制备ZnO-Pr₆O₁₁-Co₂O₃-Cr₂O₃-Er₂O₃-SiO₂压敏陶瓷，研究了SiO₂掺杂对ZnO压敏陶瓷的物相、微观形貌、压敏特性和阻抗特性等的影响。结果表明：SiO₂具有抑制晶粒生长的作用，随着SiO₂掺杂量增加，晶粒尺寸逐渐减小；SiO₂掺杂量为1.0%（摩尔分数）时，ZnO压敏陶瓷的性能最好，生成的第二相物质最多，击穿场强、平均晶界电压、非线性系数、晶界电阻率和晶界势垒高度均为最大，其值分别为435.5 V/mm，1.63 V，17.5，17 400 MΩ·cm和0.37 eV，漏电流最小为1 μA；与未掺杂SiO₂的ZnO压敏陶瓷相比，击穿场强和非线性系数分别提高了3.6倍和6.6倍。

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ZHU Qiao (1980-), female, Lecturer. E-mail: zhuqiao@sust.edu.cn

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