Article(id=1319236562374734623, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319236561179366013, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20220158, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1646236800000, receivedDateStr=2022-03-03, revisedDate=1648915200000, revisedDateStr=2022-04-03, acceptedDate=null, acceptedDateStr=null, onlineDate=1792460106699, onlineDateStr=2026-10-20, pubDate=1663603200000, pubDateStr=2022-09-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792460106699, onlineIssueDateStr=2026-10-20, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792460106699, creator=13701087609, updateTime=1792460106699, updator=13701087609, issue=Issue{id=1319236561179366013, tenantId=1146029695717560320, journalId=1263187385517883426, year='2022', volume='50', issue='9', pageStart='2351', pageEnd='2578', issueExtLink='null', onlineDate='null', pubDate='1663603200000', pubDateStr='2022-09-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792460106415, creator='13701087609', updateTime=1792460650608, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1319238843744764843, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319236561179366013, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1319238843744764844, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1319236561179366013, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=2366, endPage=2373, ext={EN=ArticleExt(id=1319236562697696032, articleId=1319236562374734623, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Effect of SiO₂ Doping on Electrical Properties of ZnO-Bi₂O₃ Based Varistor Ceramics, columnId=1263922769897599102, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Articles, runingTitle=null, highlight=null, articleAbstract=

ZnO-Bi₂O₃-MnO₂-Cr₂O₃ varistor ceramics doped with different amounts of silicon dioxide (SiO₂) were prepared by a conventional solid-phase sintering method. The phase composition and microstructure of the samples were investigated by X-ray diffraction and scanning electron microscopy. The electrical properties were measured by sourcemetry and inductance capacitance resistance, and the double Schottky barrier parameters were measured by a capacitance-voltage characteristic method. The results show that when the frequency is near 10⁵ Hz, the relative dielectric constant (ε_r) decreases rapidly since the polarization cannot change with the frequency of electric field, resulting in the corresponding loss peak. The loss peak (tanδ) firstly decreases and then increases with the increase of the doping amount, and its maximum tanδ is obtained witrhout SiO₂ and the minimum tanδ is achieved at 1.0% SiO₂. The value of tanδ at a frequency of 10⁵ Hz is reduced by doping SiO₂. The nonlinear coefficient firstly increases and then decreases with the increase of SiO₂ doping amount. The value of α reaches 43.36, the value of φ_b is 1.98 eV at 10 kHz, the donor concentration is 2.97×10²⁴ m^-3, and the leakage current I_L is 0.31 μA/cm² at SiO₂ doping amount of 1.0%.

, authors=Jianke LIU, Jiaojiao CHEN, Wenbin CAO, Jinfeng SU, Zhizhi LI, Rongkai XU, Shihua LIU, authorsList=Jianke LIU, Jiaojiao CHEN, Wenbin CAO, Jinfeng SU, Zhizhi LI, Rongkai XU, Shihua LIU, authorCompany=null, correspAuthors=null, authorNote=, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1319236563133903649, articleId=1319236562374734623, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=SiO₂掺杂对ZnO-Bi₂O₃基压敏陶瓷电学性能的影响, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=

在ZnO-Bi₂O₃-MnO₂-Cr₂O₃基础上掺杂不同含量的SiO₂，采用传统固相烧结法制备ZnO压敏陶瓷。采用X射线衍射仪、扫描电子显微镜研究了ZnO压敏陶瓷的物相组成和微观结构。利用数字源表、电感电容电阻测试仪测试并分析其电学性能。利用电容-电压特性法测试其晶界参数。结果表明：在频率10 kHz附近时，由于极化跟不上外电场变化，相对介电常数急速下降，同时产生相应的损耗峰。随着SiO₂掺杂量的增加，损耗角正切（tanδ）先降低后升高，在掺杂量为0时最高，1.0%（摩尔分数）时最低，SiO₂的掺杂明显降低了在10⁵ Hz附近的tanδ值。非线性系数（α）随着SiO₂掺杂量的增加先增加后减小，在SiO₂掺杂量为1.0%时，样品α值达到43.36，晶界势垒高度φ_b在10 kHz时为1.98 eV，施主浓度低至2.97×10²⁴ m^-3，同时漏电流I_L为0.31 μA/cm²。

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LIU Jianke (1966-), male, Ph.D., Professor. E-mail: liujk@sust.edu.cn

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LIU Jianke (1966-), male, Ph.D., Professor. E-mail: liujk@sust.edu.cn

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刘建科（1966—），男，博士，教授。

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刘建科（1966—），男，博士，教授。

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