Article(id=1322943207906095297, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20210247, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1617984000000, receivedDateStr=2021-04-10, revisedDate=1623254400000, revisedDateStr=2021-06-10, acceptedDate=null, acceptedDateStr=null, onlineDate=1793343839860, onlineDateStr=2026-10-30, pubDate=1639929600000, pubDateStr=2021-12-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793343839860, onlineIssueDateStr=2026-10-30, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793343839860, creator=13701087609, updateTime=1793343839860, updator=13701087609, issue=Issue{id=1322943149844345666, tenantId=1146029695717560320, journalId=1263187385517883426, year='2021', volume='49', issue='12', pageStart='2549', pageEnd='2816', issueExtLink='null', onlineDate='null', pubDate='1639929600000', pubDateStr='2021-12-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793343826018, creator='13701087609', updateTime=1793345974749, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1322952162350859029, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1322952162350859030, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=2615, endPage=2620, ext={EN=ArticleExt(id=1322943208795287746, articleId=1322943207906095297, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Effect of Heating Rate on Microstructure and Electrical Properties of ZnO Varistors, columnId=1319726165087077079, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Article, runingTitle=null, highlight=null, articleAbstract=

The effect of heating rate on the microstructure and electrical properties of ZnO-Bi₂O₃-Sb₂O₃-Co₂O₃-MnO₂-Cr₂O₃-SiO₂ varistors was investigated. ZnO grains grow rapidly with decreasing the heating rate from 3℃/min to 1.5℃/min, resulting in the deterioration of the uniformity of the sample structure. When the heating rate increases from 3℃/min to 10℃/min, the defect diffusion becomes weakly, hindering the formation of the double Schottky barrier. When the heating rate is 3℃/min, the maximum nonlinear coefficient of the sample is 43.4, the minimum leakage current is 1.0 μA/cm², the voltage gradient is 448 V/mm, the standard deviation is the minimum, and the stability of the sample is the optimum. The loss tangent tanδ under the action of an electric field at 200 Hz-2 MHz is less than 0.03. The optimum overall electrical performance of ZnO varistor can be obtained at a heating rate of 3℃/min. Also, the existence of the negatively charged a Bi-rich phase (i.e., Bi_3.73Sb_0.27O_6.0+x) at the grain boundary has an influence on the electrical properties of ZnO varistors.

, authors=Wenbin CAO, Janeen SU, Jianke LIU, Jiaojiao CHEN, Yinan QIAO, authorsList=Wenbin CAO, Janeen SU, Jianke LIU, Jiaojiao CHEN, Yinan QIAO, authorCompany=null, correspAuthors=null, authorNote=, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322943209952915651, articleId=1322943207906095297, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=升温速率对ZnO压敏陶瓷微观结构和电学性能的影响, columnId=1263922770220560512, journalTitle=硅酸盐学报, columnName=研究论文, runingTitle=null, highlight=null, articleAbstract=

研究了升温速率对ZnO-Bi₂O₃-Sb₂O₃-Co₂O₃-MnO₂-Cr₂O₃-SiO₂压敏陶瓷微观结构和电学性能的影响。当升温速率从3℃/min降低到1.5℃/min时，ZnO晶粒快速长大导致样品结构均匀性变差。当升温速率从3℃/min升高到10℃/min时，缺陷扩散变弱导致双Schottky势垒形成受阻。升温速率为3℃/min时，样品的非线性系数为最大值43.4，漏电流为最小值1.0 μA/cm²，击穿场强为448 V/mm，三者的标准偏差达到最小，样品稳定性最好，200 Hz~2 MHz电场作用下损耗角正切tanδ小于0.03，综合电学性能最优。同时，晶界处带负电的富Bi相Bi_3.73Sb_0.27O_6.0+x的存在对ZnO压敏陶瓷的电学性能有重要影响。

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CAO Wenbin (1988-), male, Associate Professor. E-mail: caowenbin@sust.edu.cn

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