Article(id=1322944444349153686, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20210086, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1611849600000, receivedDateStr=2021-01-29, revisedDate=1618416000000, revisedDateStr=2021-04-15, acceptedDate=null, acceptedDateStr=null, onlineDate=1793344134652, onlineDateStr=2026-10-30, pubDate=1639929600000, pubDateStr=2021-12-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793344134652, onlineIssueDateStr=2026-10-30, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793344134652, creator=13701087609, updateTime=1793344134652, updator=13701087609, issue=Issue{id=1322943149844345666, tenantId=1146029695717560320, journalId=1263187385517883426, year='2021', volume='49', issue='12', pageStart='2549', pageEnd='2816', issueExtLink='null', onlineDate='null', pubDate='1639929600000', pubDateStr='2021-12-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793343826018, creator='13701087609', updateTime=1793345974749, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1322952162350859029, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1322952162350859030, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322943149844345666, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=2644, endPage=2651, ext={EN=ArticleExt(id=1322944446811210135, articleId=1322944444349153686, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Effects of Scratch Speed and Crystal Orientation on Scratch Characteristics of 6H-SiC Wafer, columnId=1319726165087077079, journalTitle=Journal of the Chinese Ceramic Society, columnName=Research Article, runingTitle=null, highlight=null, articleAbstract=

Scratch tests were conducted on 6H-SiC single crystal wafers at different speeds and crystal orientations by a micron-/nano-sacle mechanical test system to analyze the friction coefficient, scratch depth of cut and surface three-dimensional morphology of the scratches. The results show that when the static load is 4 N or 6 N and the scratch speed is 0.2-1.6 mm/min, the scratch friction coefficient, scratch cutting depth and scratch width increase with the increases of load and scratch speed, and the plastic deformation area of SiC single crystal sheet increases and the surface becomes rougher. The friction coefficient is lower for low-speed scratching, thus reducing the wear rate of diamond head to some degree. The accumulation and pit degree of scratch materials at different crystal orientations are different. When the scratch crystal orientations are and , the friction coefficient, peak height and valley depth of scratch morphology are smaller, while the scratches along the and crystal orientations are larger. The former is easier to realize plastic removal than the latter.

, authors=Yinxia ZHANG, Pengju HUANG, Wei GAO, authorsList=Yinxia ZHANG, Pengju HUANG, Wei GAO, authorCompany=null, correspAuthors=Wei GAO, authorNote=

ZHANG Yinxia (1974-), female, Ph.D., Associate Professor. E-mail:

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GAO Wei(1974-), male, Experimentalist. E-mail:
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采用微纳米力学测试系统对6H-SiC单晶片开展了不同速率和不同晶向的划痕试验,对划痕的摩擦系数、划痕切削深度以及表面三维形貌进行分析,进而研究划痕速率和晶向对6H-SiC单晶片划痕特征的影响。结果表明:当静载荷4 N和6 N、划痕速率从0.2 mm/min到1.6 mm/min时,随着载荷及划痕速率增大,划痕摩擦系数、划痕切削深度和划痕宽度等增大,SiC单晶片塑性变形区域增大,表面更粗糙。低速时摩擦系数较小,在一定程度上会减小划头的磨损速率。不同晶向的划痕材料堆积和凹坑程度不同,沿和晶向划痕的摩擦系数、划痕峰高和谷深较小,而沿和晶向划痕时较大,前者比后者较易实现塑性域加工。

, authors=张银霞, 黄鹏举, 郜伟, authorsList=张银霞, 黄鹏举, 郜伟, authorCompany=null, correspAuthors=郜伟, authorNote=

张银霞(1974—),女,博士,副教授。

, correspAuthorsNote=
郜伟(1974—),男,实验师。
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划痕速率和晶向对6H-SiC单晶片划痕特征的影响
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张银霞 , 黄鹏举 , 郜伟
硅酸盐学报 | 研究论文 2021,49(12): 2644-2651
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硅酸盐学报 |研究论文 2021 , 49 (12) : 2644 -2651
划痕速率和晶向对6H-SiC单晶片划痕特征的影响
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张银霞 , 黄鹏举, 郜伟
作者信息
  • 郑州大学机械与动力工程学院,抗疲劳制造技术河南省工程实验室,郑州 450001
通讯作者:
郜伟(1974—),男,实验师。
作者简介:

张银霞(1974—),女,博士,副教授。

Effects of Scratch Speed and Crystal Orientation on Scratch Characteristics of 6H-SiC Wafer
Yinxia ZHANG , Pengju HUANG, Wei GAO
Affiliations
  • Henan Key Engineering Laboratory of Anti-Manufacturing Technology, School of Mechanical and Power Engineering, Zhengzhou University, Zhengzhou 450001, China
  • Corresponding Author:
    GAO Wei(1974-), male, Experimentalist. E-mail:

    ZHANG Yinxia (1974-), female, Ph.D., Associate Professor. E-mail:

出版时间: 2021-12-20 doi: 10.14062/j.issn.0454-5648.20210086
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采用微纳米力学测试系统对6H-SiC单晶片开展了不同速率和不同晶向的划痕试验,对划痕的摩擦系数、划痕切削深度以及表面三维形貌进行分析,进而研究划痕速率和晶向对6H-SiC单晶片划痕特征的影响。结果表明:当静载荷4 N和6 N、划痕速率从0.2 mm/min到1.6 mm/min时,随着载荷及划痕速率增大,划痕摩擦系数、划痕切削深度和划痕宽度等增大,SiC单晶片塑性变形区域增大,表面更粗糙。低速时摩擦系数较小,在一定程度上会减小划头的磨损速率。不同晶向的划痕材料堆积和凹坑程度不同,沿和晶向划痕的摩擦系数、划痕峰高和谷深较小,而沿和晶向划痕时较大,前者比后者较易实现塑性域加工。

碳化硅晶片  /  划痕速率  /  晶向  /  表面形貌

Scratch tests were conducted on 6H-SiC single crystal wafers at different speeds and crystal orientations by a micron-/nano-sacle mechanical test system to analyze the friction coefficient, scratch depth of cut and surface three-dimensional morphology of the scratches. The results show that when the static load is 4 N or 6 N and the scratch speed is 0.2-1.6 mm/min, the scratch friction coefficient, scratch cutting depth and scratch width increase with the increases of load and scratch speed, and the plastic deformation area of SiC single crystal sheet increases and the surface becomes rougher. The friction coefficient is lower for low-speed scratching, thus reducing the wear rate of diamond head to some degree. The accumulation and pit degree of scratch materials at different crystal orientations are different. When the scratch crystal orientations are and , the friction coefficient, peak height and valley depth of scratch morphology are smaller, while the scratches along the and crystal orientations are larger. The former is easier to realize plastic removal than the latter.

silicon carbide wafer  /  scratch speed  /  crystal orientation  /  surface morphology
张银霞, 黄鹏举, 郜伟. 划痕速率和晶向对6H-SiC单晶片划痕特征的影响. 硅酸盐学报, 2021 , 49 (12) : 2644 -2651 . DOI: 10.14062/j.issn.0454-5648.20210086
Yinxia ZHANG, Pengju HUANG, Wei GAO. Effects of Scratch Speed and Crystal Orientation on Scratch Characteristics of 6H-SiC Wafer[J]. Journal of the Chinese Ceramic Society, 2021 , 49 (12) : 2644 -2651 . DOI: 10.14062/j.issn.0454-5648.20210086
  • 国家自然科学基金重点项目(U1804254)
  • 河南省自然科学基金(162300410244)
  • 中国博士后科学基金(2015M580635)
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doi: 10.14062/j.issn.0454-5648.20210086
  • 接收时间:2021-01-29
  • 首发时间:2026-10-30
  • 出版时间:2021-12-20
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  • 收稿日期:2021-01-29
  • 修回日期:2021-04-15
基金
国家自然科学基金重点项目(U1804254)
河南省自然科学基金(162300410244)
中国博士后科学基金(2015M580635)
作者信息
    郑州大学机械与动力工程学院,抗疲劳制造技术河南省工程实验室,郑州 450001

通讯作者:

郜伟(1974—),男,实验师。
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2种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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