Article(id=1322943270153757664, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942627649303277, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20200608, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1597507200000, receivedDateStr=2020-08-16, revisedDate=1600099200000, revisedDateStr=2020-09-15, acceptedDate=null, acceptedDateStr=null, onlineDate=1793343854701, onlineDateStr=2026-10-30, pubDate=1624118400000, pubDateStr=2021-06-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793343854701, onlineIssueDateStr=2026-10-30, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793343854701, creator=13701087609, updateTime=1793343854701, updator=13701087609, issue=Issue{id=1322942627649303277, tenantId=1146029695717560320, journalId=1263187385517883426, year='2021', volume='49', issue='6', pageStart='1033', pageEnd='1246', issueExtLink='null', onlineDate='null', pubDate='1624118400000', pubDateStr='2021-06-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793343701517, creator='13701087609', updateTime=1793345989266, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1322952223231181603, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942627649303277, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1322952223231181604, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942627649303277, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=1151, endPage=1156, ext={EN=ArticleExt(id=1322943270321529825, articleId=1322943270153757664, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Structure and Optical-Electric Properties of VO₂ Films Prepared by Annealing V Films, columnId=null, journalTitle=Journal of the Chinese Ceramic Society, columnName=null, runingTitle=null, highlight=null, articleAbstract=

Metal V films were prepared on quartz substrates via magnetron sputtering, and then converted to VO₂ films via vacuum annealing. The effect of annealing temperature on the surface morphologies, crystalline structures, optical properties and electric properties of VO₂ films was investigated. The results show that the crystallinity of the films increases with the increase of annealing temperature from 300℃ to 450℃. The films annealed at 400℃ and 450℃ are a pure monoclinic phase. The grains grow better and the grain boundaries are clear. The valent states of V element for different samples include +4 and +5 states. The presence of V⁵⁺ in the films is due to the oxidation in atmosphere. The annealing temperature has little effect on the visible transmittance, but the solar modulation efficiency increases. The metal-insulator transition (MIT) temperature and the resistance of semiconductor phase increase with increasing the annealing temperature. The resistance change amplitude across the MIT for the films annealed at 400℃ and 450℃ is more than 2 orders of magnitude. The hysteresis width and the MIT temperature of the film annealed at 450℃ are 14.6℃ and 61.0℃, respectively.

, authors=Wenhui YUAN¹, Baoshun LIU², authorsList=Wenhui YUAN, Baoshun LIU, authorCompany=null, correspAuthors=Baoshun LIU, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322943270699017186, articleId=1322943270153757664, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=热处理V膜制备VO₂薄膜的结构和光电性能, columnId=0, journalTitle=硅酸盐学报, columnName=, runingTitle=null, highlight=null, articleAbstract=

先用磁控溅射法在石英玻璃基片上制备了金属V膜，然后经过真空退火处理被转变为VO₂薄膜。研究了退火温度对VO₂薄膜表面形貌、晶体结构、光学性能和电学性能的影响。结果表明：随着退火温度由300℃增加到450℃，VO₂薄膜的结晶度明显增加。退火温度在400℃和450℃制备的样品是高纯M相单斜结构，晶粒发育较好，晶界清晰。不同温度退火的样品的表面V元素包含由4+和5+态，5+态的出现是由于表面V元素受环境中氧化导致。虽然退火温度的改变对VO₂薄膜的可见光透过率无明显影响，但是可以改善对太阳光的调节效率。VO₂薄膜半导体-金属相变温度和半导体相的电阻随热处理温度增加而增加，在400℃和450℃退火样品电阻相变前后的变化幅度可达2个数量级，450℃退火制备样品的滞后宽度和半导体金属相变临界温度分别为14.6℃和61.0℃。

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YUAN Wenhui(1984-), male, Master, Senior Engineer. E-mail: 110yuanwenhui@163.com

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YUAN Wenhui(1984-), male, Master, Senior Engineer. E-mail: 110yuanwenhui@163.com

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袁文辉（1984—），男，硕士，高级工程师。

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袁文辉（1984—），男，硕士，高级工程师。

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