Article(id=1322942546191725509, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942545734546372, articleNumber=null, orderNo=null, doi=10.14062/j.issn.0454-5648.20200508, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1594224000000, receivedDateStr=2020-07-09, revisedDate=1597593600000, revisedDateStr=2020-08-17, acceptedDate=null, acceptedDateStr=null, onlineDate=1793343682096, onlineDateStr=2026-10-30, pubDate=1618848000000, pubDateStr=2021-04-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793343682096, onlineIssueDateStr=2026-10-30, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793343682096, creator=13701087609, updateTime=1793343682096, updator=13701087609, issue=Issue{id=1322942545734546372, tenantId=1146029695717560320, journalId=1263187385517883426, year='2021', volume='49', issue='4', pageStart='605', pageEnd='806', issueExtLink='null', onlineDate='null', pubDate='1618848000000', pubDateStr='2021-04-20', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793343681986, creator='13701087609', updateTime=1793345524324, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1322950273110508350, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942545734546372, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1322950273110508351, tenantId=1146029695717560320, journalId=1263187385517883426, issueId=1322942545734546372, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=736, endPage=742, ext={EN=ArticleExt(id=1322942546334331846, articleId=1322942546191725509, tenantId=1146029695717560320, journalId=1263187385517883426, language=EN, title=Growth of Six Inches SiC Single Crystals Without Micropipe Defect, columnId=null, journalTitle=Journal of the Chinese Ceramic Society, columnName=null, runingTitle=null, highlight=null, articleAbstract=

The micropipe (MP) in silicon carbide (SiC) single crystal substrate is a fatal defect for SiC-based devices, which will seriously affect the yield of SiC power devices. In this paper, the 6 in n-type 4H-SiC single crystals without micropipe defect were prepared by the optimized growth design based on physical vapor transport (PVT) method. The effects of the optimized growth design on the elimination of micropipes were also studied. Based on the principle of crystallography and kinetics, the mechanism of micropipe decomposition and closing is clarified. In summary, the optimized growth design adopted in this paper not only promotes the stability of SiC single crystal growth, but also can improve the crystalline quality of SiC single crystal, and can quickly reduce the density of micropipes. The prepared large size 6 in n-type 4H-SiC single crystals without micropipe defect will be more suitable for making high-voltage and ultra-high-voltage power devices.

, authors=Fusheng ZHANG, Kun YANG, Xinhui LIU, Yajuan LU, Xiaolong NIU, Yuanhang SHANG, Tingting LI, authorsList=Fusheng ZHANG, Kun YANG, Xinhui LIU, Yajuan LU, Xiaolong NIU, Yuanhang SHANG, Tingting LI, authorCompany=null, correspAuthors=Kun YANG, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322942546535658439, articleId=1322942546191725509, tenantId=1146029695717560320, journalId=1263187385517883426, language=CN, title=无微管缺陷六英寸SiC单晶的制备, columnId=0, journalTitle=硅酸盐学报, columnName=, runingTitle=null, highlight=null, articleAbstract=

SiC单晶衬底中的微管缺陷对SiC基器件是一种致命的缺陷，会严重影响SiC功率器件的成品率。基于物理气相传输（PVT）法，通过改进生长设计装配制备了绝对零微管缺陷6 in的n型4H-SiC单晶。从结晶学和动力学原理对改进生长设计装配消除微管的机理进行分析，阐明了单晶生长过程中微管分解和闭合的机制。采用的优化生长设计方案不仅有利于提高SiC单晶生长的稳定性，更可以提高SiC单晶的结晶质量，达到快速降低微管缺陷目的。所制备的无微管缺陷、大尺寸6 in n型4H-SiC单晶更加适合制作高压以及特高压功率器件。

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张福生（1989—），男，博士。

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