Article(id=1322557043802755490, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322557042389275039, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.8.306, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1723392000000, receivedDateStr=2024-08-12, revisedDate=1731859200000, revisedDateStr=2024-11-18, acceptedDate=1733241600000, acceptedDateStr=2024-12-04, onlineDate=1793251771164, onlineDateStr=2026-10-29, pubDate=1788019200000, pubDateStr=2026-08-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793251771164, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793251771164, creator=13701087609, updateTime=1793251771164, updator=13701087609, issue=Issue{id=1322557042389275039, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='8', pageStart='1', pageEnd='354', issueExtLink='null', onlineDate='null', pubDate='1788019200000', pubDateStr='2026-08-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793251770826, creator='13701087609', updateTime=1793251770826, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=306, endPage=318, ext={EN=ArticleExt(id=1322557044272517539, articleId=1322557043802755490, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Analysis of Magnetic Field Radiation of IGBT Device and Electromagnetic Interference Issues on Gate Driver Circuit in Sub-module of VSC Valves for HVDC, columnId=1152281499626778753, journalTitle=Journal of Power Supply, columnName=EMI/EMC, runingTitle=null, highlight=null, articleAbstract=

The modular multilevel converter (MMC) is a core component in the voltage sourced converter based high-voltage direct-current transmission, and its safe and reliable operation is crucial for ensuring the security of power supply. Insulated gate bipolar transistor (IGBT) devices in converter valves will produce significant electromagnetic interference (EMI) due to the high du/dt and di/dt, which can easily affect the normal operation of low-voltage control circuits and even lead to system failures. The gate driver circuit is directly connected with the highvoltage and large-current IGBT, and it supplies switch control signals to the system. Therefore, it is the most susceptible unit in low-voltage control circuits. The electromagnetic radiation from IGBT devices and the EMI issues within the gate drive voltage are investigated. First, it is clarified that the distance between the driver circuit and the power module is much less than the wavelength of electromagnetic waves generated by IGBT switching, thus focusing on the near-field radiation issues. With the consideration of the complex layout and wiring on the gate driver circuit and the presence of localized copper plating, it is revealed for the first time that the electromagnetic radiation sources on the gate driver circuit are composed of electromagnetic sources generated by the switching of IGBT devices and the electromagnetic scattering sources caused by copper plating on the gate driver circuit, which exhibit characteristics of multi-source interaction. Then, an actual converter valve sub-module was taken as a research object, and experiments were conducted under various switching conditions to fully and accurately determine the spatial magnetic field distribution characteristics of the converter valve sub-module in terms of location, frequency and intensity. In addition, the electromagnetic scattering characteristics on the gate driver circuit and the induced voltage at the driver signal port under the combined effects of electromagnetic scattering and radiation were also verified.

, authors=Yuyao YAN¹, Han PENG¹, Qiaozhi YUE¹, Manbo WANG¹, Jiancheng BAI³, Qiaoling TONG², authorsList=Yuyao YAN, Han PENG, Qiaozhi YUE, Manbo WANG, Jiancheng BAI, Qiaoling TONG, authorCompany=null, correspAuthors=Han PENG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322557048173220262, articleId=1322557043802755490, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=柔直换流阀子模块中IGBT器件的磁场辐射特性与驱动电路的电磁问题分析, columnId=1149830424375066632, journalTitle=电源学报, columnName=电磁干扰与电磁兼容, runingTitle=null, highlight=null, articleAbstract=

模块化多电平换流器MMC（modular multilevel converter）是柔性直流输电的核心装备，其安全可靠运行对于保障电力安全至关重要。换流阀中绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）器件在开关过程中因高电压和大电流的快速投切产生强电磁干扰，影响低压控制电路的正常工作，严重时会导致系统故障。驱动板卡与高压大电流IGBT器件直接相接，为系统提供开关控制信号，是低压二次板卡中最易受干扰的单元。因此，将探讨换流阀子模块IGBT器件的电磁辐射及驱动信号电压中的电磁干扰问题。首先，明确了驱动板卡与功率模块之间的距离远小于IGBT开关电磁波的波长，因此展开聚焦近场辐射问题。然后，驱动板卡上布局、布线复杂且存在局部铺铜的情况，揭示了驱动板卡上的电磁辐射源由IGBT器件开关电磁源及驱动板卡上铺铜所引起的电磁散射源构成，呈多源互相作用的特性。最后，以实际换流阀子模块为研究对象，通过不同开关工况下的实验分析，全面且准确地获得了换流阀子模块的空间磁场在位置、频率和强度上的分布特性，验证了驱动板卡上电磁散射特性及电磁散射和辐射共同作用下的驱动信号端口的感应电压。

, authors=闫玉瑶中国电源学会学生会员¹, 彭晗中国电源学会高级会员¹, 岳乔治中国电源学会学生会员¹, 王曼博¹, 白建成中国电源学会会员³, 童乔凌², authorsList=闫玉瑶中国电源学会学生会员, 彭晗中国电源学会高级会员, 岳乔治中国电源学会学生会员, 王曼博, 白建成中国电源学会会员, 童乔凌, authorCompany=null, correspAuthors=彭晗中国电源学会高级会员, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=gqE2vJvO7R/0HU03u4gxPA==, magXml=pOFcp7hu/J9au4Hi//+SmQ==, pdfUrl=null, pdf=4iWuRI5rWP0gS/sdC5u17w==, pdfFileSize=3343015, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=M2ktgQAxj+GwXgN6TCnjlA==, mapNumber=null, fund=null)}, authors=[Author(id=1322557048634593713, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557043802755490, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=D202380847@hust.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322557048731062707, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557043802755490, authorId=1322557048634593713, language=EN, stringName=Yuyao YAN, firstName=Yuyao, middleName=null, lastName=YAN, prefix=null, suffix=Student Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=¹, address=^1.State Key Laboratory of Advanced Electromagnetic Technology (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology), Wuhan 430074, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322557048793977268, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557043802755490, authorId=1322557048634593713, language=CN, stringName=闫玉瑶中国电源学会学生会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=¹, address=^1.强电磁技术全国重点实验室（华中科技大学电气与电子工程学院），武汉　430074, bio={"content":"

闫玉瑶（2000—　），女，中国电源学会学生会员，博士研究生。研究方向：柔性直流换流阀的电磁辐射分析。E-mail：D202380847@hust.edu.cn。

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闫玉瑶（2000—　），女，中国电源学会学生会员，博士研究生。研究方向：柔性直流换流阀的电磁辐射分析。E-mail：D202380847@hust.edu.cn。

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岳乔治（1997—　），男，中国电源学会学生会员，博士研究生。研究方向：宽禁带半导体器件特性分析与应用，栅极驱动电路设计与电磁干扰分析。E-mail：george_yue@hust.edu.cn。

"}, bioImg=null, bioContent=

岳乔治（1997—　），男，中国电源学会学生会员，博士研究生。研究方向：宽禁带半导体器件特性分析与应用，栅极驱动电路设计与电磁干扰分析。E-mail：george_yue@hust.edu.cn。

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王曼博（2002—　），男，本科生。研究方向：宽禁带半导体器件栅极驱动器设计，电磁辐射分析。E-mail：2570274714@qq.com。

"}, bioImg=null, bioContent=

王曼博（2002—　），男，本科生。研究方向：宽禁带半导体器件栅极驱动器设计，电磁辐射分析。E-mail：2570274714@qq.com。

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白建成（1988—　），男，中国电源学会会员，硕士。研究方向：大功率IGBT动态特性分析及应用，栅极驱动电路设计及控制保护算法。E-mail：baijc@163.com。

"}, bioImg=null, bioContent=

白建成（1988—　），男，中国电源学会会员，硕士。研究方向：大功率IGBT动态特性分析及应用，栅极驱动电路设计及控制保护算法。E-mail：baijc@163.com。

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童乔凌（1981—　），男，博士，研究员。研究方向：集成电路设计，电力电子技术。E-mail：tongqiaoling@hust.edu.cn。

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童乔凌（1981—　），男，博士，研究员。研究方向：集成电路设计，电力电子技术。E-mail：tongqiaoling@hust.edu.cn。

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