Article(id=1322531789638324984, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531709363536798, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.6.301, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1709395200000, receivedDateStr=2024-03-03, revisedDate=1718985600000, revisedDateStr=2024-06-22, acceptedDate=1722528000000, acceptedDateStr=2024-08-02, onlineDate=1793245750101, onlineDateStr=2026-10-29, pubDate=1782748800000, pubDateStr=2026-06-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245750101, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245750101, creator=13701087609, updateTime=1793245750101, updator=13701087609, issue=Issue{id=1322531709363536798, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='6', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1782748800000', pubDateStr='2026-06-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245730962, creator='13701087609', updateTime=1793245730962, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=301, endPage=310, ext={EN=ArticleExt(id=1322531789889983225, articleId=1322531789638324984, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Prediction Method for IGBT Aging Parameter Based on Transfer Learning Model, columnId=1322506830719341418, journalTitle=Journal of Power Supply, columnName=AI and Power Electronics, runingTitle=null, highlight=null, articleAbstract=

Aimed at the health status of insulated gate bipolar transistors (IGBTs) and the problem of evaluation on their remaining useful life (RUL), the aging parameter of IGBTs was predicted based on an adaptive recurrent neural network (AdaRNN) transfer learning model. First, the failure mechanism of IGBTs was analyzed, and the on-state collector-emitter voltage was selected as the aging parameter to evaluate the health status of IGBTs. Then, an IGBT aging test bench was set up to collect the aging parameter online. Finally, based on the acquired aging parameter, the AdaRNN model was used to predict the IGBT aging parameter. Results show that when the same IGBT aging parameter was used as the training and test sets, the accuracy and speed of prediction results of the traditional time series model and AdaRNN model were similar. When the aging parameters of two sets of different IGBTs were used as the training and test sets, the AdaRNN model can solve the problem of aging parameter difference caused by device difference, and the prediction accuracy was obviously higher than that of the traditional time series model, indicating the strong generalization capability and robustness of the new model.

, authors=Wei LUO, Yufan LIU, Dewen ZHANG, authorsList=Wei LUO, Yufan LIU, Dewen ZHANG, authorCompany=null, correspAuthors=Wei LUO, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531790535906042, articleId=1322531789638324984, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=基于迁移学习模型的IGBT老化参数预测方法, columnId=1322506830924862316, journalTitle=电源学报, columnName=人工智能与电力电子, runingTitle=null, highlight=null, articleAbstract=

针对绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的健康状态及剩余使用寿命RUL(remaining useful life)评估问题,采用基于迁移学习的自适应循环神经网络AdaRNN(adaptive recurrent neural network)模型预测IGBT的老化参数。首先分析IGBT的失效机理,选择集电极-发射极导通电压作为评价IGBT健康状态的老化参数;然后搭建IGBT老化实验台,在线采集该老化参数;最后基于采集的老化参数,利用AdaRNN模型实现IGBT老化参数预测。结果表明,使用同一IGBT老化参数作为训练集与测试集时,传统时序模型和AdaRNN模型预测结果的精度与速度相似;使用2组不同IGBT的老化参数作为训练集与测试集时,AdaRNN模型可解决由于器件差异导致的老化参数差异问题,预测的准确度明显高于传统时序模型,模型的泛化能力和鲁棒性强。

, authors=罗韡, 刘宇凡, 张德稳, authorsList=罗韡, 刘宇凡, 张德稳, authorCompany=null, correspAuthors=罗韡, authorNote=

刘宇凡(2000— ),男,硕士研究生。研究方向:微弱信号检测及功率器件可靠性。E-mail:。

张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

, correspAuthorsNote=
罗韡(1986— ),男,通信作者,博士,副教授。研究方向:多电平变流器,大功率同步电机控制,物联网。E-mail:。
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刘宇凡(2000— ),男,硕士研究生。研究方向:微弱信号检测及功率器件可靠性。E-mail:。

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刘宇凡(2000— ),男,硕士研究生。研究方向:微弱信号检测及功率器件可靠性。E-mail:。

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张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

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张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

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基于迁移学习模型的IGBT老化参数预测方法
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罗韡 , 刘宇凡 , 张德稳
电源学报 | 人工智能与电力电子 2026,24(6): 301-310
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电源学报 |人工智能与电力电子 2026 , 24 (6) : 301 -310
基于迁移学习模型的IGBT老化参数预测方法
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刘宇凡(2000— ),男,硕士研究生。研究方向:微弱信号检测及功率器件可靠性。E-mail:。

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张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

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张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

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罗韡 , 刘宇凡 , 张德稳
作者信息
  • 上海理工大学机械工程学院,上海 200093
通讯作者:
罗韡(1986— ),男,通信作者,博士,副教授。研究方向:多电平变流器,大功率同步电机控制,物联网。E-mail:。
作者简介:

刘宇凡(2000— ),男,硕士研究生。研究方向:微弱信号检测及功率器件可靠性。E-mail:。

张德稳(1998— ),男,硕士研究生。研究方向:功率器件可靠性。E-mail:。

Prediction Method for IGBT Aging Parameter Based on Transfer Learning Model
Wei LUO , Yufan LIU , Dewen ZHANG
Affiliations
  • School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
出版时间: 2026-06-30 doi: 10.13234/j.issn.2095-2805.2026.6.301
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针对绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的健康状态及剩余使用寿命RUL(remaining useful life)评估问题,采用基于迁移学习的自适应循环神经网络AdaRNN(adaptive recurrent neural network)模型预测IGBT的老化参数。首先分析IGBT的失效机理,选择集电极-发射极导通电压作为评价IGBT健康状态的老化参数;然后搭建IGBT老化实验台,在线采集该老化参数;最后基于采集的老化参数,利用AdaRNN模型实现IGBT老化参数预测。结果表明,使用同一IGBT老化参数作为训练集与测试集时,传统时序模型和AdaRNN模型预测结果的精度与速度相似;使用2组不同IGBT的老化参数作为训练集与测试集时,AdaRNN模型可解决由于器件差异导致的老化参数差异问题,预测的准确度明显高于传统时序模型,模型的泛化能力和鲁棒性强。

绝缘栅双极型晶体管  /  数据驱动  /  老化参数  /  迁移学习

Aimed at the health status of insulated gate bipolar transistors (IGBTs) and the problem of evaluation on their remaining useful life (RUL), the aging parameter of IGBTs was predicted based on an adaptive recurrent neural network (AdaRNN) transfer learning model. First, the failure mechanism of IGBTs was analyzed, and the on-state collector-emitter voltage was selected as the aging parameter to evaluate the health status of IGBTs. Then, an IGBT aging test bench was set up to collect the aging parameter online. Finally, based on the acquired aging parameter, the AdaRNN model was used to predict the IGBT aging parameter. Results show that when the same IGBT aging parameter was used as the training and test sets, the accuracy and speed of prediction results of the traditional time series model and AdaRNN model were similar. When the aging parameters of two sets of different IGBTs were used as the training and test sets, the AdaRNN model can solve the problem of aging parameter difference caused by device difference, and the prediction accuracy was obviously higher than that of the traditional time series model, indicating the strong generalization capability and robustness of the new model.

Insulated gate bipolar transistor (IGBT)  /  data-driven  /  aging parameter  /  transfer learning
罗韡, 刘宇凡, 张德稳. 基于迁移学习模型的IGBT老化参数预测方法. 电源学报, 2026 , 24 (6) : 301 -310 . DOI: 10.13234/j.issn.2095-2805.2026.6.301
Wei LUO, Yufan LIU, Dewen ZHANG. Prediction Method for IGBT Aging Parameter Based on Transfer Learning Model[J]. Journal of Power Supply, 2026 , 24 (6) : 301 -310 . DOI: 10.13234/j.issn.2095-2805.2026.6.301

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2026年第24卷第6期
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doi: 10.13234/j.issn.2095-2805.2026.6.301
  • 接收时间:2024-03-03
  • 首发时间:2026-10-29
  • 出版时间:2026-06-30
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  • 收稿日期:2024-03-03
  • 修回日期:2024-06-22
  • 录用日期:2024-08-02
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作者信息
    上海理工大学机械工程学院,上海 200093

通讯作者:

罗韡(1986— ),男,通信作者,博士,副教授。研究方向:多电平变流器,大功率同步电机控制,物联网。E-mail:。
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