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Article(id=1322531736743948855, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531709363536798, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.6.11, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1761580800000, receivedDateStr=2025-10-28, revisedDate=1767456000000, revisedDateStr=2026-01-04, acceptedDate=1769356800000, acceptedDateStr=2026-01-26, onlineDate=1793245737490, onlineDateStr=2026-10-29, pubDate=1782748800000, pubDateStr=2026-06-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245737490, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245737490, creator=13701087609, updateTime=1793245737490, updator=13701087609, issue=Issue{id=1322531709363536798, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='6', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1782748800000', pubDateStr='2026-06-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245730962, creator='13701087609', updateTime=1793245730962, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=11, endPage=18, ext={EN=ArticleExt(id=1322531736932692536, articleId=1322531736743948855, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

Aimed at the problem that various characteristics cannot be well compromised in the design of reverse blocking integrated gate commutated thyristor (RB-IGCT) devices, based on the research on the effect of electron irradiation on the device performance, a double-sided proton irradiation method is proposed, which is further verified by simulations. Results show that electron irradiation will significantly shorten the overall lifetime of the device, and greatly decreasing the internal carrier concentration in its on-state. Therefore, electron irradiation has a positive effect on the turn-off characteristics of the device at the cost of deteriorating all of its other characteristics. In contrast, double-sided proton irradiation can locally modulate the carrier concentration distribution in the on-state of the device, thus ensuring its on-state characteristics and surge current withstand capability. Meanwhile, this irradiation method reduces the leakage current of the device at high temperature (400 K) by nearly 50%, indicating that it is an effective method for handling the trade-off relationship between various performance parameters of the device.

, authors=Junjie MA1, Rongdong WANG1, Tiansheng HU1, Lairan WANG1, Jiansheng HU1, Wuhua YANG2, authorsList=Junjie MA, Rongdong WANG, Tiansheng HU, Lairan WANG, Jiansheng HU, Wuhua YANG, authorCompany=null, correspAuthors=Wuhua YANG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531737494729275, articleId=1322531736743948855, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=基于寿命控制技术的逆阻型IGCT性能提升研究, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

针对逆阻型集成门极换流晶闸管RB-IGCT（reverse blocking-integrated gate commutated thyristor）器件设计时各项特性无法较好折中的问题，在研究电子辐照对器件性能影响的基础上，提出了一种双侧质子辐照方法，并通过器件仿真进行了验证。结果表明，电子辐照会显著缩短器件的整体寿命，降低器件导通状态下内部的载流子浓度，对器件关断特性的改善效果较好，但会使器件其他特性恶化；而双侧质子辐照可局部调节器件导通状态下的载流子浓度分布，从而保证器件的导通特性与抗浪涌电流能力，且该辐照方法将器件在高温（400 K）下的漏电流减小近50%，是一种处理器件各项性能之间折中关系的有效方法。

, authors=马俊杰1, 王蓉东1, 胡天生1, 王来冉1, 胡剑生1, 杨武华中国电源学会会员2, authorsList=马俊杰, 王蓉东, 胡天生, 王来冉, 胡剑生, 杨武华中国电源学会会员, authorCompany=null, correspAuthors=杨武华中国电源学会会员, authorNote=

马俊杰（1986—　），男，硕士，高级工程师。研究方向：特高压换流阀控制。E-mail：。

王蓉东（1993—　），男，本科，工程师。研究方向：特高压换流阀控制。E-mail：。

胡天生（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

王来冉（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

胡剑生（1979—　），男，本科，高级工程师。研究方向：大功率器件驱动控制。E-mail：。

, correspAuthorsNote=
杨武华（1991—　），男，中国电源学会会员，通信作者，博士，讲师。研究方向：功率半导体器件。E-mail：。
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马俊杰（1986—　），男，硕士，高级工程师。研究方向：特高压换流阀控制。E-mail：。

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马俊杰（1986—　），男，硕士，高级工程师。研究方向：特高压换流阀控制。E-mail：。

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王蓉东（1993—　），男，本科，工程师。研究方向：特高压换流阀控制。E-mail：。

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王蓉东（1993—　），男，本科，工程师。研究方向：特高压换流阀控制。E-mail：。

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胡天生（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

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胡天生（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

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王来冉（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

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王来冉（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

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胡剑生（1979—　），男，本科，高级工程师。研究方向：大功率器件驱动控制。E-mail：。

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基于寿命控制技术的逆阻型IGCT性能提升研究
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马俊杰 1 , 王蓉东 1 , 胡天生 1 , 王来冉 1 , 胡剑生 1 , 杨武华中国电源学会会员 2
电源学报 | 功率半导体器件与驱动 2026,24(6): 11-18
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电源学报 |功率半导体器件与驱动 2026 , 24 (6) : 11 -18
基于寿命控制技术的逆阻型IGCT性能提升研究
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胡剑生（1979—　），男，本科，高级工程师。研究方向：大功率器件驱动控制。E-mail：。

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马俊杰1 , 王蓉东1 , 胡天生1 , 王来冉1 , 胡剑生1 , 杨武华中国电源学会会员2
作者信息
  • 1.许继电气股份有限公司，许昌　461000
  • 2.西安理工大学电子工程系，西安　710048
通讯作者:
杨武华（1991—　），男，中国电源学会会员，通信作者，博士，讲师。研究方向：功率半导体器件。E-mail：。
作者简介:

马俊杰（1986—　），男，硕士，高级工程师。研究方向：特高压换流阀控制。E-mail：。

王蓉东（1993—　），男，本科，工程师。研究方向：特高压换流阀控制。E-mail：。

胡天生（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

王来冉（1999—　），男，硕士，工程师。研究方向：特高压换流阀控制。E-mail：。

胡剑生（1979—　），男，本科，高级工程师。研究方向：大功率器件驱动控制。E-mail：。

Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology
Junjie MA1 , Rongdong WANG1 , Tiansheng HU1 , Lairan WANG1 , Jiansheng HU1 , Wuhua YANG Member, CPSS2
Affiliations
  • 1.XJ Electric Co., Ltd., Xuchang 461000, China
  • 2.Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
出版时间: 2026-06-30 doi: 10.13234/j.issn.2095-2805.2026.6.11
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针对逆阻型集成门极换流晶闸管RB-IGCT（reverse blocking-integrated gate commutated thyristor）器件设计时各项特性无法较好折中的问题，在研究电子辐照对器件性能影响的基础上，提出了一种双侧质子辐照方法，并通过器件仿真进行了验证。结果表明，电子辐照会显著缩短器件的整体寿命，降低器件导通状态下内部的载流子浓度，对器件关断特性的改善效果较好，但会使器件其他特性恶化；而双侧质子辐照可局部调节器件导通状态下的载流子浓度分布，从而保证器件的导通特性与抗浪涌电流能力，且该辐照方法将器件在高温（400 K）下的漏电流减小近50%，是一种处理器件各项性能之间折中关系的有效方法。

逆阻型集成门极换流晶闸管  /  寿命控制  /  电子辐照  /  质子辐照

Aimed at the problem that various characteristics cannot be well compromised in the design of reverse blocking integrated gate commutated thyristor (RB-IGCT) devices, based on the research on the effect of electron irradiation on the device performance, a double-sided proton irradiation method is proposed, which is further verified by simulations. Results show that electron irradiation will significantly shorten the overall lifetime of the device, and greatly decreasing the internal carrier concentration in its on-state. Therefore, electron irradiation has a positive effect on the turn-off characteristics of the device at the cost of deteriorating all of its other characteristics. In contrast, double-sided proton irradiation can locally modulate the carrier concentration distribution in the on-state of the device, thus ensuring its on-state characteristics and surge current withstand capability. Meanwhile, this irradiation method reduces the leakage current of the device at high temperature (400 K) by nearly 50%, indicating that it is an effective method for handling the trade-off relationship between various performance parameters of the device.

Reverse blocking-integrated gate commutated thyristor (RB-IGCT)  /  lifetime control  /  electron irradiation  /  proton irradiation
马俊杰, 王蓉东, 胡天生, 王来冉, 胡剑生, 杨武华中国电源学会会员. 基于寿命控制技术的逆阻型IGCT性能提升研究. 电源学报, 2026 , 24 (6) : 11 -18 . DOI: 10.13234/j.issn.2095-2805.2026.6.11
Junjie MA, Rongdong WANG, Tiansheng HU, Lairan WANG, Jiansheng HU, Wuhua YANG. Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology[J]. Journal of Power Supply, 2026 , 24 (6) : 11 -18 . DOI: 10.13234/j.issn.2095-2805.2026.6.11
基金
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  • 陕西省秦创原“科学家+工程师”队伍建设资助项目(2023KXJ-189)
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2026年第24卷第6期
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doi: 10.13234/j.issn.2095-2805.2026.6.11
  • 接收时间：2025-10-28
  • 首发时间：2026-10-29
  • 出版时间：2026-06-30
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  • 收稿日期：2025-10-28
  • 修回日期：2026-01-04
  • 录用日期：2026-01-26
基金
Shaanxi Qinchuangyuan “Scientist + Engineer” Team Construction Project(2023KXJ-189)
陕西省秦创原“科学家+工程师”队伍建设资助项目(2023KXJ-189)
作者信息
    1.许继电气股份有限公司，许昌　461000
    2.西安理工大学电子工程系，西安　710048

通讯作者:

杨武华（1991—　），男，中国电源学会会员，通信作者，博士，讲师。研究方向：功率半导体器件。E-mail：。
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