Article(id=1322531687087583380, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531607177707705, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.5.1, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1700409600000, receivedDateStr=2023-11-20, revisedDate=1710950400000, revisedDateStr=2024-03-21, acceptedDate=1713801600000, acceptedDateStr=2024-04-23, onlineDate=1793245725652, onlineDateStr=2026-10-29, pubDate=1780070400000, pubDateStr=2026-05-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245725652, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245725652, creator=13701087609, updateTime=1793245725652, updator=13701087609, issue=Issue{id=1322531607177707705, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='5', pageStart='1', pageEnd='348', issueExtLink='null', onlineDate='null', pubDate='1780070400000', pubDateStr='2026-05-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245706600, creator='13701087609', updateTime=1793245706600, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=1, endPage=7, ext={EN=ArticleExt(id=1322531687288909973, articleId=1322531687087583380, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Research and Design of A Nonlinear VLD Terminal, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

The breakdown voltage characteristics of power devices are primarily determined by the terminal. Variation of lateral doping (VLD) is a commonly used terminal technology, known for its advantages such as low cost, simple process, and high flexibility. In some cases, traditional linear VLD terminals have limitations, particularly in terms of breakdown voltage. A new nonlinear VLD terminal derived from theoretical analysis is presented, which features superior electrical characteristics and more uniform electric field distribution. This effectively weakens the concentration of the electric field and increases the breakdown voltage. In the same process and material conditions, the breakdown voltage peak of the linear VLD structure is 728 V, while the nonlinear VLD structure can weakens 758 V, achieving a 4.12% enhancement in breakdown voltage characteristics. Moreover, the new structure is relatively easy to implement with minimal increase in process complexity.

, authors=Xinrui SU, Quanyuan FENG, authorsList=Xinrui SU, Quanyuan FENG, authorCompany=null, correspAuthors=Quanyuan FENG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531688299737240, articleId=1322531687087583380, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=一种非线性VLD终端的研究与设计, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

功率器件的耐压特性主要由终端决定，横向变掺杂VLD（variation of lateral doping）是一种应用广泛的终端技术，具有成本低、工艺简单、灵活性高等优点。传统的线性VLD终端在一些情况下具有局限性，其耐压会受到限制。通过理论分析提出了一种新型非线性VLD终端，这种终端的电学特性更为优异、电场分布更为均匀，有效削弱了电场的集中效应，从而提升了其耐压。在相同工艺流程和材料情况下，线性VLD结构的耐压峰值为728 V，而非线性VLD结构的耐压可达758 V，耐压特性提高了4.12%，且其工艺难度较小，易于实现。

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苏昕瑞（2000—　），男，硕士研究生。研究方向：半导体功率器件。E-mail：2859177625@qq.com。

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苏昕瑞（2000—　），男，硕士研究生。研究方向：半导体功率器件。E-mail：2859177625@qq.com。

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