Article(id=1322531587909079219, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531529172046652, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.4.1, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1689004800000, receivedDateStr=2023-07-11, revisedDate=1699459200000, revisedDateStr=2023-11-09, acceptedDate=1701792000000, acceptedDateStr=2023-12-06, onlineDate=1793245702006, onlineDateStr=2026-10-29, pubDate=1777478400000, pubDateStr=2026-04-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245702006, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245702006, creator=13701087609, updateTime=1793245702006, updator=13701087609, issue=Issue{id=1322531529172046652, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='4', pageStart='1', pageEnd='352', issueExtLink='null', onlineDate='null', pubDate='1777478400000', pubDateStr='2026-04-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245688002, creator='13701087609', updateTime=1793245688002, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=1, endPage=10, ext={EN=ArticleExt(id=1322531588127183028, articleId=1322531587909079219, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Evaluation and Analysis of Influence of IGBT Characteristic Parameter Identification Accuracy on Parallel Dynamic Current-sharing, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

The difference in characteristic parameters of an IGBT module is an important factor leading to the difference in control circuit parameters, which has a significant impact on the dynamic current-sharing characteristics of IGBT parallel applications. When the device parameters cannot be changed, some drive compensation control can make up for the influence of device differences on dynamic current-sharing, and the key to this method is accurately identifying the characteristic parameters of the IGBT module. The influence of parameter (e.g., gate resistance) identification accuracy differences on the dynamic current-sharing characteristics is studied when a synchronous pulse-asynchronous drive method is used. The correlation characteristics of characteristic parameters of IGBT devices are studied, and the characteristic models of each parameter and influencing variables are constructed. The working model of PSpice device parallel switch is established, and the variation curve of IGBT device parameters and influence factors is fitted by combining with the device manual data comparison and multi-working condition test parameter correction. Through the parallel switching characteristic experiments on two groups of modules 1 200 V/200 A and 1 700 V/300 A IGBT, the judgment on the influence of the difference in IGBT characteristic parameters on parallel current-sharing was verified. Finally, the influence of the difference in characteristic parameter identification accuracy on dynamic current-sharing characteristics was summarized.

, authors=Shengchao JIN, Wenbao WU, Xiaohong HUANG, Wei LUO, authorsList=Shengchao JIN, Wenbao WU, Xiaohong HUANG, Wei LUO, authorCompany=null, correspAuthors=Xiaohong HUANG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531588940878007, articleId=1322531587909079219, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=IGBT模块特征参数识别精确性对并联动态均流影响的评估分析, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

IGBT模块特征参数差异是导致控制回路参数差异的重要因素，对IGBT并联应用动态均流特性影响至深。在无法更改器件参数的情况下，采用一些驱动补偿控制可以弥补器件差异对动态均流的影响，精确识别IGBT模块特征参数是此类方法的关键。主要研究采用同步脉冲异步驱动方案时，以门电阻为代表的参数识别精度差异对动态均流特性的影响。对IGBT器件本体特征参数的关联特性进行了研究，构建各参数与影响变量的特征模型。建立PSpice器件并联工作模型，结合器件手册数据比对与多工况测试参数校正，拟合出IGBT器件参数与影响因子变化曲线。通过2组模块1 200 V/200 A和1 700 V/300 A IGBT并联开、关特性实验，验证了关于IGBT特征参数差异对并联均流影响的判定。最后总结了特征参数识别精确性差异对动态均流特性的影响。

, authors=金声超, 吴文宝, 黄晓宏, 罗玮, authorsList=金声超, 吴文宝, 黄晓宏, 罗玮, authorCompany=null, correspAuthors=黄晓宏, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=uOLDb6OpNHrEV7ouK2JLOA==, magXml=beJciTjwEomzRuO6w/li6A==, pdfUrl=null, pdf=9aDi2jsBTJBIOWTdHZTIQg==, pdfFileSize=5450067, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=J9Eh8uA0rTqXXQ9OaTSmsw==, mapNumber=null, fund=null)}, authors=[Author(id=1322531589435805884, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531587909079219, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=jepcc-jinshengchao@foxmail.com, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531589507109054, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531587909079219, authorId=1322531589435805884, language=EN, stringName=Shengchao JIN, firstName=Shengchao, middleName=null, lastName=JIN, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Zhixin Energy Technology Co., Ltd., Power China Jiangxi Electric Power Construction Co., Ltd., Nanchang 330001, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531589578412223, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531587909079219, authorId=1322531589435805884, language=CN, stringName=金声超, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=中国电建集团江西省电力建设有限公司智信能源科技有限公司，南昌　330001, bio={"content":"

金声超（1985—　），男，硕士，中级工程师。研究方向：风电机组设备和风电场管理。E-mail：jepcc-jinshengchao@foxmail.com。

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金声超（1985—　），男，硕士，中级工程师。研究方向：风电机组设备和风电场管理。E-mail：jepcc-jinshengchao@foxmail.com。

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吴文宝（1982—　），男，本科，高级工程师。研究方向：企业管理和新能源行业研究。E-mail：wuwenbao@foxmal.com。

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吴文宝（1982—　），男，本科，高级工程师。研究方向：企业管理和新能源行业研究。E-mail：wuwenbao@foxmal.com。

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罗玮（1981—　），男，本科，中级工程师。研究方向：调试项目管理及新能源应用。E-mail：jepcc-luowei@foxmail.com。

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罗玮（1981—　），男，本科，中级工程师。研究方向：调试项目管理及新能源应用。E-mail：jepcc-luowei@foxmail.com。

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Analysis of impedance and current distributions in parallel IGBT design[C]//2017 IEEE 26th International Symposium on Industrial Electronics (ISIE). Edinburgh, UK, 2017: 616-621., articleTitle=null, refAbstract=null), Reference(id=1322531594083094746, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531587909079219, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[2], rfOrder=1, authorNames=null, journalName=null, refType=null, unstructuredReference=Spang M, Katzenberger G. Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load[C]//2016 18th European Conference on Power Electronics and Applications (EPE’16 ECCE Europe). 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