Article(id=1322531237382697524, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531228222337541, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.3.1, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1694102400000, receivedDateStr=2023-09-08, revisedDate=1697040000000, revisedDateStr=2023-10-12, acceptedDate=1699027200000, acceptedDateStr=2023-11-04, onlineDate=1793245618433, onlineDateStr=2026-10-29, pubDate=1774800000000, pubDateStr=2026-03-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245618433, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245618433, creator=13701087609, updateTime=1793245618433, updator=13701087609, issue=Issue{id=1322531228222337541, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='3', pageStart='1', pageEnd='343', issueExtLink='null', onlineDate='null', pubDate='1774800000000', pubDateStr='2026-03-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245616250, creator='13701087609', updateTime=1793245616250, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=1, endPage=10, ext={EN=ArticleExt(id=1322531237604995637, articleId=1322531237382697524, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Performance of GaN/SiC Cascode Device and Its Application in LLC Resonant Converter, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

The gallium nitride/silicon carbide (GaN/SiC) Cascode device is a composite structure, which employs a low-voltage GaN device as an assistant switch to change the high-voltage depletion-mode SiC device into an enhancement-mode device. A normally-off GaN/SiC Cascode device was constructed by low-voltage enhancement-mode gallium nitride high electron mobility transistor (GaN HEMT) and high-voltage depletion-mode silicon carbide junction field-effect transistor (SiC JFET). The Cascode device combined the advantages of GaN HEMT such as high switching speed and simple gate-driving circuit and the high blocking voltage of SiC JFET. Both the operating principle and the switching process of GaN/SiC Cascode device were analyzed in detail, and its static characteristics were also tested. A double-pulse test platform was constructed, and the switching loss of the GaN/SiC Cascode device was compared with those of the Si/SiC Cascode device and SiC JFET at varying load current. Results show that the turn-off loss of GaN/SiC Cascode device was the lowest. In addition, the three devices were applied in an LLC resonant converter respectively, and the conversion efficiency of the converter was tested, indicating that the LLC resonant converter based on GaN/SiC Cascode device exhibited the highest conversion efficiency.

, authors=Yuming ZHOU, Jiahui ZHOU, Hangzhi LIU, authorsList=Yuming ZHOU, Jiahui ZHOU, Hangzhi LIU, authorCompany=null, correspAuthors=Yuming ZHOU, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531237948928566, articleId=1322531237382697524, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=GaN/SiC Cascode器件性能及其在LLC谐振变换器中的应用, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

氮化镓/碳化硅级联GaN/SiC Cascode(gallium nitride/silicon carbide Cascode)器件是1种利用低压GaN器件作辅助开关,将高压耗尽型碳化硅器件转变为增强型工作模式的组合结构。结合氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)开关速度快、栅极驱动简单和碳化硅结型场效应晶体管SiC JFET(silicon carbide junction field-effect transistor)高耐压的特点,利用低压增强型GaN HEMT和高压耗尽型SiC JFET构建了常关型级联器件。详细分析了GaN/SiC Cascode器件的工作原理和开关过程,测试了GaN/SiC Cascode器件的静态特性,搭建了双脉冲测试平台,对比了GaN/SiC Cascode器件、Si/SiC Cascode器件和SiC JFET 3种器件在不同电流等级下的开关损耗,结果表明,GaN/SiC Cascode器件具有更低的关断损耗。将3种器件应用到零电压开通的LLC谐振变换器,测试了变换器的转换效率,结果表明,基于GaN/SiC Cascode器件的LLC谐振变换器具有更高的转换效率。

, authors=周郁明中国电源学会会员, 周伽慧, 刘航志中国电源学会会员, authorsList=周郁明中国电源学会会员, 周伽慧, 刘航志中国电源学会会员, authorCompany=null, correspAuthors=周郁明中国电源学会会员, authorNote=

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

, correspAuthorsNote=
周郁明(1971— ),男,中国电源学会会员,通信作者,博士,教授。研究方向:新型电力电子器件及其应用。E-mail:。
, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=3VPi5Xn6k64Q/UWvVtnqmw==, magXml=5sowKMm13J1Sg/w0k02xuw==, pdfUrl=null, pdf=zr+xmaiB+yTFygo9aFZZXA==, pdfFileSize=10521317, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=oBlhG6T8HA61sWSaLvtOvw==, mapNumber=null, fund=null)}, authors=[Author(id=1322531410565517431, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=ymzhou@ahut.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=1, authorType=1, ext={EN=AuthorExt(id=1322531410678763641, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410565517431, language=EN, stringName=Yuming ZHOU, firstName=Yuming, middleName=null, lastName=ZHOU, prefix=null, suffix=Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531410762649722, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410565517431, language=CN, stringName=周郁明中国电源学会会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])]), Author(id=1322531410833952892, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=1, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=zhoujh7550@ah.sgcc.com.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531410938810494, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410833952892, language=EN, stringName=Jiahui ZHOU, firstName=Jiahui, middleName=null, lastName=ZHOU, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531411152719999, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410833952892, language=CN, stringName=周伽慧, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio={"content":"

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

"}, bioImg=null, bioContent=

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])]), Author(id=1322531411228217473, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=2, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=hangzhi_liu@ahut.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531411337269379, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531411228217473, language=EN, stringName=Hangzhi LIU, firstName=Hangzhi, middleName=null, lastName=LIU, prefix=null, suffix=Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531411530207364, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531411228217473, language=CN, stringName=刘航志中国电源学会会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio={"content":"

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

"}, bioImg=null, bioContent=

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])])], keywords=[Keyword(id=1322531411714756741, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=EN, orderNo=1, keyword=Gallium nitride/silicon carbide (GaN/SiC) Cascode device), Keyword(id=1322531411815420038, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=EN, orderNo=2, keyword=switching loss), Keyword(id=1322531411899306119, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=EN, orderNo=3, keyword=double-pulse test), Keyword(id=1322531411978997896, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=EN, orderNo=4, keyword=LLC resonant converter), Keyword(id=1322531412054495369, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=EN, orderNo=5, keyword=conversion efficiency), Keyword(id=1322531412134187146, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=CN, orderNo=1, keyword=GaN/SiC Cascode器件), Keyword(id=1322531412213878923, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=CN, orderNo=2, keyword=开关损耗), Keyword(id=1322531412280987788, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=CN, orderNo=3, keyword=双脉冲测试), Keyword(id=1322531412352290957, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=CN, orderNo=4, keyword=LLC谐振变换器), Keyword(id=1322531412440371342, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, language=CN, orderNo=5, keyword=转换效率)], refs=[Reference(id=1322531412830441617, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[1], rfOrder=0, authorNames=null, journalName=null, refType=null, unstructuredReference=陈之勃, 陈永真. 碳化硅MOSFET与硅MOSFET的应用对比分析[J]. 电源学报, 2018, 16(1): 95-98. Chen Zhibo, Chen Yongzhen. Comparative analysis of applications for SiC MOSFET and silicon MOSFET[J]. Journal of Power Supply, 2018, 16(1): 95-98. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531412910133394, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[2], rfOrder=1, authorNames=null, journalName=null, refType=null, unstructuredReference=任鹏, 涂春鸣, 侯玉超, 等. 基于Si和SiC器件的混合型级联多电平变换器及其调控优化方法[J]. 电工技术学报, 2023, 38(18): 5017-5028. Ren Peng, Tu Chunming, Hou Yuchao, et al. Research on a hybrid cascaded multilevel converter based on Si and SiC device and its control optimization method[J]. Transactions of China Electrotechnical Society, 2023, 38(18): 5017-5028. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531413086294163, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[3], rfOrder=2, authorNames=null, journalName=null, refType=null, unstructuredReference=刘昌赫, 王学远. 采用SiC MOSFET与Si MOSFET的双有源桥效率仿真分析对比[J]. 电源学报, 2020, 18(4): 109-115. Liu Changhe, Wang Xueyuan. Simulation analysis and comparison of dual active bridge efficiency based on SiC and Si MOSFET[J]. Journal of Power Supply, 2020, 18(4): 109-115. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531413165985940, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[4], rfOrder=3, authorNames=null, journalName=null, refType=null, unstructuredReference=严阳, 吴新科, 盛况. 基于碳化硅MOSFET的99.2%高效率功率因数校正器[J]. 电源学报, 2016, 14(4): 73-81. Yan Yang, Wu Xinke, Sheng Kuang. 99.2% efficiency ZVS single-phase PFC rectifier with SiC MOSFET[J]. Journal of Power Supply, 2016, 14(4): 73-81. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531413233094805, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[5], rfOrder=4, authorNames=null, journalName=null, refType=null, unstructuredReference=马荣耀, 唐开锋, 潘效飞, 等. 车用碳化硅功率模块的电热性能优化与评估[J]. 电源学报, 2024, 22(3): 78-86. Ma Rongyao, Tang Kaifeng, Pan Xiaofei, et al. Electro-thermal performance optimization and evaluation of auto-motive SiC power module[J]. Journal of Power Supply, 2024, 22(3): 78-86. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531414877261974, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[6], rfOrder=5, authorNames=null, journalName=null, refType=null, unstructuredReference=陈润田, 李楚杉, 姚文熙, 等. 基于等效励磁电感的SiC串联器件型中压双有源桥变换器的软开关技术[J]. 电工技术学报, 2024, 39(12): 3732-3745. Chen Runtian, Li Chushan, Yao Wenxi, et al. Soft-switching technique for medium voltage dual active bridge converter with series-connected SiC devices based on equivalent magnetizing inductance[J]. Transactions of China Electrotechnical Society, 2024, 39(12): 3732-3745. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531414948565143, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[7], rfOrder=6, authorNames=null, journalName=null, refType=null, unstructuredReference=Kong Moufu, Guo Jiaxin, Gao Jiacheng, et al. A high-performance 4H-SiC JFET with reverse recovery capability and low switching loss[J]. IEEE Transactions on Electron Devices, 2021, 68(10): 5022-5028., articleTitle=null, refAbstract=null), Reference(id=1322531415019868312, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[8], rfOrder=7, authorNames=null, journalName=null, refType=null, unstructuredReference=Aggeler D, Canales F, Biela J, et al. dv/dt-control methods for the SiC JFET/Si MOSFET cascode[J]. IEEE Transactions on Power Electronics, 2013, 28(8): 4074-4082., articleTitle=null, refAbstract=null), Reference(id=1322531415091171481, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[9], rfOrder=8, authorNames=null, journalName=null, refType=null, unstructuredReference=Elrajoubi A M, Ang S S, George K. Design and analysis of a new GaN-based AC/DC converter for battery charging application[J]. IEEE Transactions on Industry Applications, 2019, 55(4): 4044-4052., articleTitle=null, refAbstract=null), Reference(id=1322531415154086042, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[10], rfOrder=9, authorNames=null, journalName=null, refType=null, unstructuredReference=肖龙, 陈冬冬. 基于建模数据和最优化算法的GaN HEMT精确电热行为建模方法[J]. 电源学报, 2024, 22(1): 153-162. Xiao Long, Chen Dongdong. Modeling method for accurate electrothermal behavior of GaN HEMT based on modeling data and optimization algorithm[J]. Journal of Power Supply, 2024, 22(1): 153-162. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531415347024027, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[11], rfOrder=10, authorNames=null, journalName=null, refType=null, unstructuredReference=佟强, 刘贺, 曲璐. 基于氮化镓的反激同步整流DC/DC变换器设计[J]. 电源学报, 2024, 22(2): 81-89. Tong Qiang, Liu He, Qu Lu. Design of synchronous rectifier flyback DC/DC converter based on GaN[J]. Journal of Power Supply, 2024, 22(2): 81-89. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531415422521500, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[12], rfOrder=11, authorNames=null, journalName=null, refType=null, unstructuredReference=樊靖轩, 施佳楠, 徐子梁, 等. 基于GaN的开关线性复合高速随动脉冲负载直流变换器[J]. 电工技术学报, 2024, 39(6): 1818-1829. Fan Jingxuan, Shi Jianan, Xu Ziliang, et al. High speed switching-linear hybrid followed-up pulse load DC converter based on GaN device[J]. Transactions of China Electrotechnical Society, 2024, 39(6): 1818-1829. (in Chinese), articleTitle=null, refAbstract=null), Reference(id=1322531415489630365, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[13], rfOrder=12, authorNames=null, journalName=null, refType=null, unstructuredReference=Xu Jiale, Gu Lei, Ye Zhechi, et al. Cascode GaN/SiC: A wide-bandgap heterogenous power device for high-frequency applications[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 6340-6349., articleTitle=null, refAbstract=null), Reference(id=1322531415569322142, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[14], rfOrder=13, authorNames=null, journalName=null, refType=null, unstructuredReference=Zhong Kailun, Wang Yuru, Lü Gang, et al. 650-V normally-off GaN/SiC cascode device for power switching applications[J]. IEEE Transactions on Industrial Electronics, 2022, 69(9): 8997-9006., articleTitle=null, refAbstract=null), Reference(id=1322531415640625311, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[15], rfOrder=14, authorNames=null, journalName=null, refType=null, unstructuredReference=Wang Yuru, Lü Gang, Wei Jin, et al. Characterization of static and dynamic behavior of 1 200 V normally off GaN/SiC cascode devices[J]. IEEE Transactions on Industrial Electronics, 2020, 67(12): 10284-10294., articleTitle=null, refAbstract=null), Reference(id=1322531415728705696, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[16], rfOrder=15, authorNames=null, journalName=null, refType=null, unstructuredReference=杨玉岗, 孙彬彬, 闫孝姮. 考虑寄生电容的半桥LLC谐振变换器参数优化设计[J]. 电源学报, 2019, 17(2): 57-62. Yang Yugang, Sun Binbin, Yan Xiaoheng. Optimal design of half-bridge LLC resonant converter considering parasitic capacitance[J]. Journal of Power Supply, 2019, 17(2): 57-62. (in Chinese), articleTitle=null, refAbstract=null)], funds=[Fund(id=1322531412603949199, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, awardId=2008085ME157, language=EN, fundingSource=Anhui Provincial Natural Science Foundation(2008085ME157), fundOrder=null, country=null), Fund(id=1322531412679446672, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, awardId=2008085ME157, language=CN, fundingSource=安徽省自然科学基金资助项目(2008085ME157), fundOrder=null, country=null)], companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])], figs=null, attaches=null, journal=Journal(id=1046111678587809797, delFlag=0, nameCn=电源学报, nameEn=Journal of Power Supply, nameHistory1=null, nameHistory2=null, issn=2095-2805, eissn=, cn=12-1420/TM, coden=null, periodic=1, language=CN, oaType=是, ccby=null, superviseOffice=null, ownerOffice=null, pubOffice=null, editorOffice=null, officeType=null, aims=null, clcCode=null, officeProv=null, officeCity=null, officeAddr=null, officeZip=null, officeEmail=null, officePhone=null, editDirector=null, officeDirector=null, officeDirectorPhone=null, officeStaffNum=null, officeEmpNum=null, coverPicUrl=8IbGg9owoDeiHywqdCQ4Qw==, journalPrice=null, startedYear=null, abbrevIsoEn=J Power Supp, journalRemark=null, publicationField=null, createdTime=null, updatedTime=1784612834246, createdBy=null, updatedBy=18614031015, firstLetterCn=D, firstLetterEn=D, subjectCode=Engineering, subjectName=null, subjectCodeEn=Engineering, subjectNameEn=null, picCn=8IbGg9owoDeiHywqdCQ4Qw==, picEn=yHt2vwjzkDgqh+JDCfJKoQ==, jcr=null, cjcr=null, exts=[JournalExt(id=1283818675400590042, language=CN, name=电源学报, nameHistory1=null, nameHistory2=null, managedBy=中国科学技术协会, sponsoredBy=中国电源学会、国家海洋技术中心, publishedBy=《电源学报》编辑部, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.jops.cn/EN/home, createdTime=1784015824413, updatedTime=1784015824413, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.jops.cn/CN/column/column7.shtml, submissionAuthorUrl=https://mc03.manuscriptcentral.com/jops, submissionEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionReviewUrl=https://mc03.manuscriptcentral.com/jops, submissionCeEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionAeEditorUrl=https://mc03.manuscriptcentral.com/jops, option={"copyright":""}), JournalExt(id=1283818675471893211, language=EN, name=Journal of Power Supply, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.jops.cn/CN/home, createdTime=1784015824430, updatedTime=1784015824430, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.jops.cn/EN/column/column7.shtml, submissionAuthorUrl=https://mc03.manuscriptcentral.com/jops, submissionEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionReviewUrl=https://mc03.manuscriptcentral.com/jops, submissionCeEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionAeEditorUrl=https://mc03.manuscriptcentral.com/jops, option={"copyright":""}), JournalExt(id=1283818675400590042, language=CN, name=电源学报, nameHistory1=null, nameHistory2=null, managedBy=中国科学技术协会, sponsoredBy=中国电源学会、国家海洋技术中心, publishedBy=《电源学报》编辑部, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.jops.cn/EN/home, createdTime=1784015824413, updatedTime=1784015824413, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.jops.cn/CN/column/column7.shtml, submissionAuthorUrl=https://mc03.manuscriptcentral.com/jops, submissionEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionReviewUrl=https://mc03.manuscriptcentral.com/jops, submissionCeEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionAeEditorUrl=https://mc03.manuscriptcentral.com/jops, option={"copyright":""}), JournalExt(id=1283818675471893211, language=EN, name=Journal of Power Supply, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.jops.cn/CN/home, createdTime=1784015824430, updatedTime=1784015824430, createdBy=13041195026, updatedBy=13041195026, submissionGuidelinesUrl=http://www.jops.cn/EN/column/column7.shtml, submissionAuthorUrl=https://mc03.manuscriptcentral.com/jops, submissionEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionReviewUrl=https://mc03.manuscriptcentral.com/jops, submissionCeEditorUrl=https://mc03.manuscriptcentral.com/jops, submissionAeEditorUrl=https://mc03.manuscriptcentral.com/jops, option={"copyright":""})], databaseList=null, tenantJournalId=1146031654075715584, websiteList=[Website(id=1146832214672683008, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146031654075715584, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/dyxb/EN, language=EN, createTime=1751355707101, createBy=18614031015, updateTime=1753435268747, updateBy=18614031015, name=电源学报-英文站点, tplId=1146101810881728533, title=电源学报, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1155559379819679852, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146832214672683008, code=articleTextType, value=kx, createTime=1753436425404, updateTime=1753436425404, creator=18614031015, updator=18614031015), WebsiteProps(id=1155559379798708329, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146832214672683008, code=banner, value=null, createTime=1753436425399, updateTime=1753436425399, creator=18614031015, updator=18614031015), WebsiteProps(id=1155559379781931112, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146832214672683008, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=efYTu4aDDzS8GgTA1MjEKw==, createTime=1753436425396, updateTime=1753436425396, creator=18614031015, updator=18614031015), WebsiteProps(id=1155559379811291243, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146832214672683008, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1753436425402, updateTime=1753436425402, creator=18614031015, updator=18614031015), WebsiteProps(id=1155559379802902634, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1146832214672683008, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1753436425400, updateTime=1753436425400, creator=18614031015, updator=18614031015)]), Website(id=1148243202240405915, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146031654075715584, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/dyxb/CN, language=CN, createTime=1751692112741, createBy=18614031015, updateTime=1753435242839, updateBy=18614031015, name=电源学报-中文站点, tplId=1146099689490845704, title=电源学报, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1148618015060553758, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202240405915, code=articleTextType, value=kx, createTime=1751781475081, updateTime=1751781475081, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618015035387931, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202240405915, code=banner, value=null, createTime=1751781475075, updateTime=1751781475075, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618015022805018, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202240405915, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=efYTu4aDDzS8GgTA1MjEKw==, createTime=1751781475072, updateTime=1751781475072, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618015052165149, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202240405915, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1751781475079, updateTime=1751781475079, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618015043776540, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202240405915, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1751781475077, updateTime=1751781475077, creator=18614031015, updator=18614031015)])], journalTitle=电源学报, weixinUrl=null, journalUrl=http://www.jops.cn/CN/home, iacademicId=null, status=1, seqNo=null, journalTitleEn=Journal of Power Supply, journalPhotoCn=8IbGg9owoDeiHywqdCQ4Qw==, journalPhotoEn=yHt2vwjzkDgqh+JDCfJKoQ==, journalFirstLetter=D, journalRecommend=null, journalNew=null, journalCollection=null, jcrJf=null, cjcrJf=null, jcrJfStr=null, cjcrJfStr=null, submissionFirstDecision=null, sciSubjectClassification=null, casSubjectClassification=null, citeScore=null, totalCitationFrequency=null, icpCode=null, psCode=null, advertisingLicenseCode=null, copyrightInformation=null, country=null, option=, provinceCode=null, provinceName=null, collectFlag=false, interPubPlatform=, interPubPlatformUrl=null), detailUrlCn=https://castjournals.cast.org.cn/joweb/dyxb/CN/10.13234/j.issn.2095-2805.2026.3.1, detailUrlEn=https://castjournals.cast.org.cn/joweb/dyxb/EN/10.13234/j.issn.2095-2805.2026.3.1, pdfUrlCn=https://castjournals.cast.org.cn/joweb/dyxb/CN/PDF/10.13234/j.issn.2095-2805.2026.3.1, pdfUrlEn=https://castjournals.cast.org.cn/joweb/dyxb/EN/PDF/10.13234/j.issn.2095-2805.2026.3.1, aliStartDate=0, aliEndDate=0, collectionFlag=false, citedCount=null, citedUrl=null, previewStatus=0, delFlag=0, hasFullText=0, orderTime=1774800000000, fullTextJson=null, articleText=null, reference=null)
收藏切换
GaN/SiC Cascode器件性能及其在LLC谐振变换器中的应用
收藏切换
PDF下载
周郁明中国电源学会会员 , 周伽慧 , 刘航志中国电源学会会员
电源学报 | 功率半导体器件与驱动 2026,24(3): 1-10
收起
收藏切换
电源学报 |功率半导体器件与驱动 2026 , 24 (3) : 1 -10
GaN/SiC Cascode器件性能及其在LLC谐振变换器中的应用
全屏
[Author(id=1322531410565517431, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=ymzhou@ahut.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=1, authorType=1, ext={EN=AuthorExt(id=1322531410678763641, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410565517431, language=EN, stringName=Yuming ZHOU, firstName=Yuming, middleName=null, lastName=ZHOU, prefix=null, suffix=Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531410762649722, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410565517431, language=CN, stringName=周郁明中国电源学会会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])]), Author(id=1322531410833952892, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=1, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=zhoujh7550@ah.sgcc.com.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531410938810494, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410833952892, language=EN, stringName=Jiahui ZHOU, firstName=Jiahui, middleName=null, lastName=ZHOU, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531411152719999, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531410833952892, language=CN, stringName=周伽慧, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio={"content":"

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

"}, bioImg=null, bioContent=

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])]), Author(id=1322531411228217473, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, orderNo=2, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=hangzhi_liu@ahut.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531411337269379, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531411228217473, language=EN, stringName=Hangzhi LIU, firstName=Hangzhi, middleName=null, lastName=LIU, prefix=null, suffix=Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531411530207364, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, authorId=1322531411228217473, language=CN, stringName=刘航志中国电源学会会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002, bio={"content":"

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

"}, bioImg=null, bioContent=

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531410481631347, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, xref=null, ext=[AuthorCompanyExt(id=1322531410490019956, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China), AuthorCompanyExt(id=1322531410502602869, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531237382697524, companyId=1322531410481631347, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002)])])]
周郁明中国电源学会会员 , 周伽慧 , 刘航志中国电源学会会员
作者信息
  • 安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002
通讯作者:
周郁明(1971— ),男,中国电源学会会员,通信作者,博士,教授。研究方向:新型电力电子器件及其应用。E-mail:。
作者简介:

周伽慧(1997— ),男,硕士研究生。研究方向:电力电子可靠性。E-mail:。

刘航志(1992— ),男,中国电源学会会员,博士,讲师。研究方向:新型电力电子器件及其应用。E-mail:。

Performance of GaN/SiC Cascode Device and Its Application in LLC Resonant Converter
Yuming ZHOU Member, CPSS , Jiahui ZHOU , Hangzhi LIU Member, CPSS
Affiliations
  • Anhui University Key Laboratory of Power Electronics and Motion control, Anhui University of Technology, Ma’anshan 243002, China
出版时间: 2026-03-30 doi: 10.13234/j.issn.2095-2805.2026.3.1
文章导航
收藏切换

氮化镓/碳化硅级联GaN/SiC Cascode(gallium nitride/silicon carbide Cascode)器件是1种利用低压GaN器件作辅助开关,将高压耗尽型碳化硅器件转变为增强型工作模式的组合结构。结合氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)开关速度快、栅极驱动简单和碳化硅结型场效应晶体管SiC JFET(silicon carbide junction field-effect transistor)高耐压的特点,利用低压增强型GaN HEMT和高压耗尽型SiC JFET构建了常关型级联器件。详细分析了GaN/SiC Cascode器件的工作原理和开关过程,测试了GaN/SiC Cascode器件的静态特性,搭建了双脉冲测试平台,对比了GaN/SiC Cascode器件、Si/SiC Cascode器件和SiC JFET 3种器件在不同电流等级下的开关损耗,结果表明,GaN/SiC Cascode器件具有更低的关断损耗。将3种器件应用到零电压开通的LLC谐振变换器,测试了变换器的转换效率,结果表明,基于GaN/SiC Cascode器件的LLC谐振变换器具有更高的转换效率。

GaN/SiC Cascode器件  /  开关损耗  /  双脉冲测试  /  LLC谐振变换器  /  转换效率

The gallium nitride/silicon carbide (GaN/SiC) Cascode device is a composite structure, which employs a low-voltage GaN device as an assistant switch to change the high-voltage depletion-mode SiC device into an enhancement-mode device. A normally-off GaN/SiC Cascode device was constructed by low-voltage enhancement-mode gallium nitride high electron mobility transistor (GaN HEMT) and high-voltage depletion-mode silicon carbide junction field-effect transistor (SiC JFET). The Cascode device combined the advantages of GaN HEMT such as high switching speed and simple gate-driving circuit and the high blocking voltage of SiC JFET. Both the operating principle and the switching process of GaN/SiC Cascode device were analyzed in detail, and its static characteristics were also tested. A double-pulse test platform was constructed, and the switching loss of the GaN/SiC Cascode device was compared with those of the Si/SiC Cascode device and SiC JFET at varying load current. Results show that the turn-off loss of GaN/SiC Cascode device was the lowest. In addition, the three devices were applied in an LLC resonant converter respectively, and the conversion efficiency of the converter was tested, indicating that the LLC resonant converter based on GaN/SiC Cascode device exhibited the highest conversion efficiency.

Gallium nitride/silicon carbide (GaN/SiC) Cascode device  /  switching loss  /  double-pulse test  /  LLC resonant converter  /  conversion efficiency
周郁明中国电源学会会员, 周伽慧, 刘航志中国电源学会会员. GaN/SiC Cascode器件性能及其在LLC谐振变换器中的应用. 电源学报, 2026 , 24 (3) : 1 -10 . DOI: 10.13234/j.issn.2095-2805.2026.3.1
Yuming ZHOU, Jiahui ZHOU, Hangzhi LIU. Performance of GaN/SiC Cascode Device and Its Application in LLC Resonant Converter[J]. Journal of Power Supply, 2026 , 24 (3) : 1 -10 . DOI: 10.13234/j.issn.2095-2805.2026.3.1
  • 安徽省自然科学基金资助项目(2008085ME157)
参考文献 引证文献
排序方式:
[1]
陈之勃, 陈永真. 碳化硅MOSFET与硅MOSFET的应用对比分析[J]. 电源学报, 2018, 16(1): 95-98. Chen Zhibo, Chen Yongzhen. Comparative analysis of applications for SiC MOSFET and silicon MOSFET[J]. Journal of Power Supply, 2018, 16(1): 95-98. (in Chinese)
[2]
任鹏, 涂春鸣, 侯玉超, 等. 基于Si和SiC器件的混合型级联多电平变换器及其调控优化方法[J]. 电工技术学报, 2023, 38(18): 5017-5028. Ren Peng, Tu Chunming, Hou Yuchao, et al. Research on a hybrid cascaded multilevel converter based on Si and SiC device and its control optimization method[J]. Transactions of China Electrotechnical Society, 2023, 38(18): 5017-5028. (in Chinese)
[3]
刘昌赫, 王学远. 采用SiC MOSFET与Si MOSFET的双有源桥效率仿真分析对比[J]. 电源学报, 2020, 18(4): 109-115. Liu Changhe, Wang Xueyuan. Simulation analysis and comparison of dual active bridge efficiency based on SiC and Si MOSFET[J]. Journal of Power Supply, 2020, 18(4): 109-115. (in Chinese)
[4]
严阳, 吴新科, 盛况. 基于碳化硅MOSFET的99.2%高效率功率因数校正器[J]. 电源学报, 2016, 14(4): 73-81. Yan Yang, Wu Xinke, Sheng Kuang. 99.2% efficiency ZVS single-phase PFC rectifier with SiC MOSFET[J]. Journal of Power Supply, 2016, 14(4): 73-81. (in Chinese)
[5]
马荣耀, 唐开锋, 潘效飞, 等. 车用碳化硅功率模块的电热性能优化与评估[J]. 电源学报, 2024, 22(3): 78-86. Ma Rongyao, Tang Kaifeng, Pan Xiaofei, et al. Electro-thermal performance optimization and evaluation of auto-motive SiC power module[J]. Journal of Power Supply, 2024, 22(3): 78-86. (in Chinese)
[6]
陈润田, 李楚杉, 姚文熙, 等. 基于等效励磁电感的SiC串联器件型中压双有源桥变换器的软开关技术[J]. 电工技术学报, 2024, 39(12): 3732-3745. Chen Runtian, Li Chushan, Yao Wenxi, et al. Soft-switching technique for medium voltage dual active bridge converter with series-connected SiC devices based on equivalent magnetizing inductance[J]. Transactions of China Electrotechnical Society, 2024, 39(12): 3732-3745. (in Chinese)
[7]
Kong Moufu, Guo Jiaxin, Gao Jiacheng, et al. A high-performance 4H-SiC JFET with reverse recovery capability and low switching loss[J]. IEEE Transactions on Electron Devices, 2021, 68(10): 5022-5028.
[8]
Aggeler D, Canales F, Biela J, et al. dv/dt-control methods for the SiC JFET/Si MOSFET cascode[J]. IEEE Transactions on Power Electronics, 2013, 28(8): 4074-4082.
[9]
Elrajoubi A M, Ang S S, George K. Design and analysis of a new GaN-based AC/DC converter for battery charging application[J]. IEEE Transactions on Industry Applications, 2019, 55(4): 4044-4052.
[10]
肖龙, 陈冬冬. 基于建模数据和最优化算法的GaN HEMT精确电热行为建模方法[J]. 电源学报, 2024, 22(1): 153-162. Xiao Long, Chen Dongdong. Modeling method for accurate electrothermal behavior of GaN HEMT based on modeling data and optimization algorithm[J]. Journal of Power Supply, 2024, 22(1): 153-162. (in Chinese)
[11]
佟强, 刘贺, 曲璐. 基于氮化镓的反激同步整流DC/DC变换器设计[J]. 电源学报, 2024, 22(2): 81-89. Tong Qiang, Liu He, Qu Lu. Design of synchronous rectifier flyback DC/DC converter based on GaN[J]. Journal of Power Supply, 2024, 22(2): 81-89. (in Chinese)
[12]
樊靖轩, 施佳楠, 徐子梁, 等. 基于GaN的开关线性复合高速随动脉冲负载直流变换器[J]. 电工技术学报, 2024, 39(6): 1818-1829. Fan Jingxuan, Shi Jianan, Xu Ziliang, et al. High speed switching-linear hybrid followed-up pulse load DC converter based on GaN device[J]. Transactions of China Electrotechnical Society, 2024, 39(6): 1818-1829. (in Chinese)
[13]
Xu Jiale, Gu Lei, Ye Zhechi, et al. Cascode GaN/SiC: A wide-bandgap heterogenous power device for high-frequency applications[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 6340-6349.
[14]
Zhong Kailun, Wang Yuru, Lü Gang, et al. 650-V normally-off GaN/SiC cascode device for power switching applications[J]. IEEE Transactions on Industrial Electronics, 2022, 69(9): 8997-9006.
[15]
Wang Yuru, Lü Gang, Wei Jin, et al. Characterization of static and dynamic behavior of 1 200 V normally off GaN/SiC cascode devices[J]. IEEE Transactions on Industrial Electronics, 2020, 67(12): 10284-10294.
[16]
杨玉岗, 孙彬彬, 闫孝姮. 考虑寄生电容的半桥LLC谐振变换器参数优化设计[J]. 电源学报, 2019, 17(2): 57-62. Yang Yugang, Sun Binbin, Yan Xiaoheng. Optimal design of half-bridge LLC resonant converter considering parasitic capacitance[J]. Journal of Power Supply, 2019, 17(2): 57-62. (in Chinese)
2026年第24卷第3期
PDF下载
24
4
引用本文
BibTeX
文章信息
doi: 10.13234/j.issn.2095-2805.2026.3.1
  • 接收时间:2023-09-08
  • 首发时间:2026-10-29
  • 出版时间:2026-03-30
补充材料
相关文章
文章信息
作者
出版历史
  • 收稿日期:2023-09-08
  • 修回日期:2023-10-12
  • 录用日期:2023-11-04
基金
Anhui Provincial Natural Science Foundation(2008085ME157)
安徽省自然科学基金资助项目(2008085ME157)
作者信息
    安徽工业大学安徽省电力电子与运动控制高校重点实验室,马鞍山 243002

通讯作者:

周郁明(1971— ),男,中国电源学会会员,通信作者,博士,教授。研究方向:新型电力电子器件及其应用。E-mail:。
参考文献
分享链接
https://castjournals.cast.org.cn/joweb/dyxb/CN/10.13234/j.issn.2095-2805.2026.3.1
分享至
全文二维码

扫描看全文

引用本文
BibTeX
本文的引用情况
2种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏