Article(id=1321485242574155858, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2025.4.295, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1652198400000, receivedDateStr=2022-05-11, revisedDate=1659456000000, revisedDateStr=2022-08-03, acceptedDate=1660492800000, acceptedDateStr=2022-08-15, onlineDate=1792996233838, onlineDateStr=2026-10-26, pubDate=1753804800000, pubDateStr=2025-07-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792996233838, onlineIssueDateStr=2026-10-26, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792996233838, creator=13701087609, updateTime=1792996233838, updator=13701087609, issue=Issue{id=1321485129009189764, tenantId=1146029695717560320, journalId=1146031654075715584, year='2025', volume='23', issue='4', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1753804800000', pubDateStr='2025-07-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792996206762, creator='13701087609', updateTime=1792996850840, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1321487830518444549, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1321487830518444550, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=295, endPage=305, ext={EN=ArticleExt(id=1321485242809036883, articleId=1321485242574155858, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance, columnId=1153024086025429058, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices, runingTitle=null, highlight=null, articleAbstract=

The loss calculation accuracy of a three-phase full-bridge inverter will be reduced if the parasitic capacitance and parasitic inductance loss of SiC MOSFET in the switching process and the conduction loss caused by changes in the duty cycle in the conduction process are ignored. To solve the problems, a physical model of SiC MOSFET considering parasitic capacitance and parasitic inductance was proposed. The parasitic capacitance and parasitic inductance were obtained by querying a data sheet and using an oscillation method. The losses of parasitic inductance and parasitic capacitance during the switching process were calculated, the average conduction loss equation under space vector pulse width modulation (SVPWM) was deduced, and the three-phase full-bridge loss was obtained. Finally, experiments were carried out on the control system of a permanent magnet synchronous motor based on SiC MOSFET. The influence of PWM frequency on the three-phase full-bridge loss was analyzed, and the accuracy of parameters for the physical model of SiC MOSFET was verified. Moreover, the loss calculation method based on the physical model of SiC MOSFET can improve the loss calculation accuracy of the inverter.

, authors=Kuihao CHEN^{1, 2}, Xu LIU^{1, 2}, authorsList=Kuihao CHEN, Xu LIU, authorCompany=null, correspAuthors=Xu LIU, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1321485243870195798, articleId=1321485242574155858, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=考虑寄生电容和电感影响的SiC MOSFET三相全桥损耗计算方法, columnId=1153024086184812611, journalTitle=电源学报, columnName=功率半导体器件, runingTitle=null, highlight=null, articleAbstract=

忽略开关过程中SiC MOSFET寄生电容和电感的损耗和导通过程中占空比变化所导致的导通损耗会降低三相全桥逆变器的损耗计算精度。为了解决上述问题，提出了1种考虑寄生电容、电感的SiC MOSFET物理模型，通过数据手册分段取值和振荡法获得寄生电容和寄生电感，计算了开关过程中寄生电容和寄生电感产生的损耗，推导出在空间矢量脉宽调制SVPWM（space vector pulse width modulation）下的平均导通损耗公式，得到三相全桥损耗。最后在基于SiC MOSFET的永磁同步电机控制系统上进行实验，分析了PWM频率对三相全桥损耗的影响，验证了SiC MOSFET物理模型参数的准确性，且基于SiC MOSFET物理模型的损耗计算方法能提高逆变器的损耗计算精度。

, authors=陈魁昊中国电源学会学生会员^{1, 2}, 刘旭^{1, 2}, authorsList=陈魁昊中国电源学会学生会员, 刘旭, authorCompany=null, correspAuthors=刘旭, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=6E92ufMHbzy8eE3YGubEWg==, magXml=tz/FccGaggnk74WWNc3akg==, pdfUrl=null, pdf=XvZltXeRLjAe+DXbWYk0eQ==, pdfFileSize=2981910, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=2UzHMNsVTwRleEwdz8+CQg==, mapNumber=null, fund=null)}, authors=[Author(id=1321485244570644574, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1321485242574155858, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=946500774@qq.com, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1321485244658724961, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1321485242574155858, authorId=1321485244570644574, language=EN, stringName=Kuihao CHEN, firstName=Kuihao, middleName=null, lastName=CHEN, prefix=null, suffix=Student Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=^{1, 2}, address=^1.State Key Laboratory of Reliability and Intelligence of Electrical Equipment (School of Electrical Engineering, Hebei University of Technology), Tianjin 300130, China
^2.Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, Tianjin 300130, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1321485244834885730, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1321485242574155858, authorId=1321485244570644574, language=CN, stringName=陈魁昊中国电源学会学生会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=^{1, 2}, address=^1.省部共建电工装备可靠性与智能化国家重点实验室（河北工业大学电气工程学院），天津　300130
^2.河北省电磁场与电器可靠性重点实验室，天津　300130, bio={"content":"

陈魁昊（1996—　），男，中国电源学会学生会员，硕士研究生。研究方向：电机控制及其损耗。E-mail：946500774@qq.com。

"}, bioImg=null, bioContent=

陈魁昊（1996—　），男，中国电源学会学生会员，硕士研究生。研究方向：电机控制及其损耗。E-mail：946500774@qq.com。

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