Article(id=1321485206356344987, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2025.4.316, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1681228800000, receivedDateStr=2023-04-12, revisedDate=1684857600000, revisedDateStr=2023-05-24, acceptedDate=1689523200000, acceptedDateStr=2023-07-17, onlineDate=1792996225203, onlineDateStr=2026-10-26, pubDate=1753804800000, pubDateStr=2025-07-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792996225203, onlineIssueDateStr=2026-10-26, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792996225203, creator=13701087609, updateTime=1792996225203, updator=13701087609, issue=Issue{id=1321485129009189764, tenantId=1146029695717560320, journalId=1146031654075715584, year='2025', volume='23', issue='4', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1753804800000', pubDateStr='2025-07-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792996206762, creator='13701087609', updateTime=1792996850840, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1321487830518444549, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1321487830518444550, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321485129009189764, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=316, endPage=321, ext={EN=ArticleExt(id=1321485206670917788, articleId=1321485206356344987, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Research on Gate Failure and Aging Characteristics of Solid-state Circuit Breaker Based on SiC MOSFET, columnId=1153024086025429058, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices, runingTitle=null, highlight=null, articleAbstract=

DC solid-state circuit breakers (SSCBs) based on SiC MOSFET have attracted much attention owing to their capability of quickly breaking the fault currents. However, the failure mechanism of SiC MOSFET is more complex than those of traditional power semiconductor devices. SiC MOSFET has special gate failure and aging characteristics, but the relevant characteristics and mechanism are not clear, which brings great challenges to the failure and aging discrimination of SSCBs. A 400 V DC SSCB based on SiC MOSFET was taken as the research object, and the single and repetitive hard switching characteristics of the device under this working condition were investigated. It was verified that gate failure may occur in SiC MOSFET during the process of single or repetitive actions, and a new aging characteristic of gate voltage reduction appeared. Based on simulation tools, the temperature and thermal stress distribution inside the device during the process were obtained. It was found that the temperature rise near the gate structure of the device was close to 1 000 K, and a thermal stress of 1.4 GPa would be generated. Through the opening, slicing and SEM scanning of failed devices, the cracks in the gate oxide layer were confirmed, and the mechanism of gate failure and aging caused by gate structure cracking due to thermal stress was verified.

, authors=Lei GUI, Shibao PANG, Yong WANG, authorsList=Lei GUI, Shibao PANG, Yong WANG, authorCompany=null, correspAuthors=Lei GUI, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1321485207031627933, articleId=1321485206356344987, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=基于SiC MOSFET的固态断路器栅极失效及老化特性研究, columnId=1153024086184812611, journalTitle=电源学报, columnName=功率半导体器件, runingTitle=null, highlight=null, articleAbstract=

基于SiC MOSFET的直流固态断路器SSCBs（solid-state circuit breakers）因其具有快速分断故障电流的能力而广受瞩目，然而SiC MOSFET的失效机理较为复杂，有别于传统功率半导体器件的热失效模式，SiC MOSFET具有特殊的栅极失效及老化特征，但是相关特性及机理尚不明确，为固态断路器的失效及老化判别带来了较大困难。针对上述问题，以基于SiC MOSFET的400 V直流固态断路器为研究对象，探究器件在断路器这一特殊工况下的单次及多次硬开关特性，验证了SiC MOSFET在单次或多次动作过程中均有可能发生栅极失效，且出现了栅极电压降低这一新的老化特性。采用有限元仿真进行器件级分析，得到其内部在动作过程中的温度分布及热应力分布情况，结果表明器件栅极结构附近的温升接近1 000 K，并会产生1.4 GPa的热应力。通过对失效器件的开封、切片及电镜扫描处理，确认了栅极氧化层的裂缝存在，验证了SiC MOSFET由于热应力导致栅极结构开裂，并导致栅极失效及老化的机理。

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庞士宝（1977—　），男，本科，高级工程师。研究方向：输电线路运行维护。E-mail：ShipaoPang_1977@163.com。

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庞士宝（1977—　），男，本科，高级工程师。研究方向：输电线路运行维护。E-mail：ShipaoPang_1977@163.com。

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王勇（1975—　），男，本科，高级工程师。研究方向：输电线路运行维护。E-mail：yWang_1975@163.com。

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王勇（1975—　），男，本科，高级工程师。研究方向：输电线路运行维护。E-mail：yWang_1975@163.com。

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