Article(id=1322557080725213801, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322557042389275039, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.8.14, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1726070400000, receivedDateStr=2024-09-12, revisedDate=1734278400000, revisedDateStr=2024-12-16, acceptedDate=1738684800000, acceptedDateStr=2025-02-05, onlineDate=1793251779967, onlineDateStr=2026-10-29, pubDate=1788019200000, pubDateStr=2026-08-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793251779967, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793251779967, creator=13701087609, updateTime=1793251779967, updator=13701087609, issue=Issue{id=1322557042389275039, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='8', pageStart='1', pageEnd='354', issueExtLink='null', onlineDate='null', pubDate='1788019200000', pubDateStr='2026-08-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793251770826, creator='13701087609', updateTime=1793251770826, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=14, endPage=23, ext={EN=ArticleExt(id=1322557081127866986, articleId=1322557080725213801, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

Aimed at the widespread problems of low applicability and difficult monitoring in SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET) junction temperature monitoring methods, a junction temperature monitoring method based on turn-on transient drain-source voltage is proposed. Due to the existence of power loop inductance during the turn-on process, the turn-on transient drain-source voltage can reflect the change rate of current, and it is negatively correlated with the junction temperature through theoretical deduction. On this basis, a junction temperature estimation model based on turn-on transient drain-source voltage is established using a double-pulse test. Compared with the actual temperature, the junction temperature obtained by the junction temperature estimation model has higher accuracy, while the selected temperature sensitive electrical parameters show load-independence during the turn-on process. In addition, this method is simple to measure and calibrate without destroying the device itself, so it has a wider range of applications.

, authors=Huifen DONG^{1, 2}, Chan LI¹, Zhoushuai CHEN³, Songming LIU¹, authorsList=Huifen DONG, Chan LI, Zhoushuai CHEN, Songming LIU, authorCompany=null, correspAuthors=Chan LI, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322557083598312045, articleId=1322557080725213801, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=基于开通瞬态漏源电压的SiC MOSFET结温监测方法, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

针对SiC金属-氧化物半导体场效应晶体管SiC MOSFET（SiC metal-oxide-semiconductor field-effect transistor）结温监测方法普遍存在适用性低和监测困难的问题，提出一种基于开通瞬态漏源电压的SiC MOSFET结温监测方法。由于开通过程中存在功率回路电感，因此开通瞬态漏源电压可以反映电流变化率，通过理论推导得出开通瞬态漏源电压与结温呈负相关。在此基础上，利用双脉冲实验，建立了基于开通瞬态漏源电压的结温估计模型。与实际温度相比，利用该模型得到的结温具有较高的精度，同时所选择的温敏电参数在开通过程中呈现了负载无关性的特点，且该方法测量和校准简单、无需破坏器件本身，因此适用范围更广。

, authors=董慧芬^{1, 2}, 李婵¹, 陈周帅³, 刘松名¹, authorsList=董慧芬, 李婵, 陈周帅, 刘松名, authorCompany=null, correspAuthors=李婵, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=4Ed8UnU2E43uWhP1HM2GDA==, magXml=msbJ9mjS2CJ6WIaPZRbqMQ==, pdfUrl=null, pdf=/xWPriU91VZkDuafa0bFzA==, pdfFileSize=9765281, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=yw+rtFmBPHfz4r7Zmlilhw==, mapNumber=null, fund=null)}, authors=[Author(id=1322557084441367160, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557080725213801, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=hfdong@cauc.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322557084529447547, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557080725213801, authorId=1322557084441367160, language=EN, stringName=Huifen DONG, firstName=Huifen, middleName=null, lastName=DONG, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=^{1, 2}, address=^1.College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China
^2.Key Laboratory of Technology and Equipment of Tianjin Urban Air Transportation System, Tianjin 300300, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322557084844020348, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322557080725213801, authorId=1322557084441367160, language=CN, stringName=董慧芬, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=^{1, 2}, address=^1.中国民航大学电子信息与自动化学院，天津　300300
^2.天津市城市空中交通系统技术与装备重点实验室，天津　300300, bio={"content":"

董慧芬（1970—　），女，博士，副教授。研究方向：航空电气装置故障诊断、故障预测研究，航空电气系统可靠性与适航研究。E-mail：hfdong@cauc.edu.cn。

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董慧芬（1970—　），女，博士，副教授。研究方向：航空电气装置故障诊断、故障预测研究，航空电气系统可靠性与适航研究。E-mail：hfdong@cauc.edu.cn。

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陈周帅（1987—　），男，本科，工程师。研究方向：功率器件性能表征、测试方法研究。E-mail：chenzhoushuai@semipower.com.cn。

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陈周帅（1987—　），男，本科，工程师。研究方向：功率器件性能表征、测试方法研究。E-mail：chenzhoushuai@semipower.com.cn。

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刘松名（2000—　），男，硕士研究生。研究方向：电机控制器可靠性。E-mail：2023022270@cauc.edu.cn。

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刘松名（2000—　），男，硕士研究生。研究方向：电机控制器可靠性。E-mail：2023022270@cauc.edu.cn。

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