电源学报

基于集射电压频谱的IGBT老化状态解耦方法

PDF下载

李亚辉中国电源学会学生会员 , 杜明星中国电源学会会员

电源学报 | 功率半导体器件与驱动 2026,24(7): 8-19

收起

电源学报 |功率半导体器件与驱动 2026 , 24 (7) : 8 -19

基于集射电压频谱的IGBT老化状态解耦方法

全屏

[Author(id=1322531824757223609, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=l20184331@126.com, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531824828526779, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, authorId=1322531824757223609, language=EN, stringName=Yahui LI, firstName=Yahui, middleName=null, lastName=LI, prefix=null, suffix=Student Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Tianjin Key Laboratory of New Energy Power Conversion, Transmission and Intelligent Control, Tianjin 300384, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531824899829948, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, authorId=1322531824757223609, language=CN, stringName=李亚辉中国电源学会学生会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384, bio={"content":"

李亚辉（1999—　），男，中国电源学会学生会员，硕士研究生。研究方向：电力电子器件可靠性。E-mail：l20184331@126.com。

"}, bioImg=null, bioContent=

李亚辉（1999—　），男，中国电源学会学生会员，硕士研究生。研究方向：电力电子器件可靠性。E-mail：l20184331@126.com。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531824673337525, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, xref=null, ext=[AuthorCompanyExt(id=1322531824681726134, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, companyId=1322531824673337525, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Tianjin Key Laboratory of New Energy Power Conversion, Transmission and Intelligent Control, Tianjin 300384, China), AuthorCompanyExt(id=1322531824690114743, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, companyId=1322531824673337525, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384)])]), Author(id=1322531824975327422, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, orderNo=1, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=dumx@tjut.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=1, authorType=1, ext={EN=AuthorExt(id=1322531825067602112, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, authorId=1322531824975327422, language=EN, stringName=Mingxing DU, firstName=Mingxing, middleName=null, lastName=DU, prefix=null, suffix=Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Tianjin Key Laboratory of New Energy Power Conversion, Transmission and Intelligent Control, Tianjin 300384, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531825143099585, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, authorId=1322531824975327422, language=CN, stringName=杜明星中国电源学会会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1322531824673337525, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, xref=null, ext=[AuthorCompanyExt(id=1322531824681726134, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, companyId=1322531824673337525, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Tianjin Key Laboratory of New Energy Power Conversion, Transmission and Intelligent Control, Tianjin 300384, China), AuthorCompanyExt(id=1322531824690114743, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531821913485488, companyId=1322531824673337525, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384)])])]

李亚辉中国电源学会学生会员, 杜明星中国电源学会会员

作者信息

天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384

通讯作者:

杜明星（1980—　），男，中国电源学会会员，通信作者，博士，教授。研究方向：电力电子器件可靠性。E-mail：dumx@tjut.edu.cn。

作者简介:

李亚辉（1999—　），男，中国电源学会学生会员，硕士研究生。研究方向：电力电子器件可靠性。E-mail：l20184331@126.com。

Decoupling Method for IGBT Aging State Based on Collector-emitter Voltage Spectrum

Yahui LI Student Member, CPSS, Mingxing DU Member, CPSS

Affiliations

Tianjin Key Laboratory of New Energy Power Conversion, Transmission and Intelligent Control, Tianjin 300384, China

出版时间: 2026-07-30 doi: 10.13234/j.issn.2095-2805.2026.7.8

文章导航

摘要

收起

IGBT的健康监测对于电力系统的正常运行至关重要，当前针对IGBT器件老化的研究主要面向单一老化，多种老化叠加会导致部分监测方法适用性降低、误动作频繁，对于多老化状态判定和区分的研究还有很多不足。由于集射电压U_CE频谱中含有丰富的信息，不同老化会对其产生不同影响，因此提出一种基于U_CE频谱的键合线老化和栅极老化的判定和区分方法。首先，分析键合线和栅极老化对开关电压波形的影响。然后，对开关电压波形进行快速傅里叶变换FFT（fast Fourier transform）并进行频谱分析，探究不同老化对频谱产生的影响，由此进行老化判定和区分。最后，搭建电路进行实验验证，并分析不同工况对该方法的影响。结果表明键合线老化和栅极老化均会使高频段幅值增大，所提方法可以有效区分不同老化形式。

关键词

IGBT / 状态监测 / 频谱 / 键合线老化 / 栅极老化

Abstract

收起

The health monitoring of the IGBT is crucial for the normal operation of the system, and current research mainly focuses on single aging. The combination of multiple aging states can lead to low applicability and misoperation of some monitoring methods. There are still many shortcomings in the research on the determination and differentiation of multiple aging states. Due to the rich information contained in the U_CE spectrum, different aging will have different effects on it. Therefore, a method for determining and distinguishing bond wire aging and gate aging based on U_CE spectrum is proposed. Firstly, the impact of bonding wire and gate aging on the voltage switch waveform is analyzed. Then, fast Fourier transform (FFT) the switch voltage waveform and perform spectral analysis to explore the impact of different aging on the spectrum, and thus make aging judgments and distinctions. Finally, the circuit is constructed for experimental verification and the impact of different operating conditions on the method is analyzed. The experimental results show that both bond wire aging and gate aging can increase the amplitude of the high-frequency band, and the proposed method can effectively distinguish different aging forms.

Key words

IGBT / condition monitoring / spectrum / bond wire aging / gate oxide layer aging

引用本文

李亚辉中国电源学会学生会员, 杜明星中国电源学会会员. 基于集射电压频谱的IGBT老化状态解耦方法. 电源学报, 2026 , 24 (7) : 8 -19 . DOI: 10.13234/j.issn.2095-2805.2026.7.8

Yahui LI, Mingxing DU. Decoupling Method for IGBT Aging State Based on Collector-emitter Voltage Spectrum[J]. Journal of Power Supply, 2026 , 24 (7) : 8 -19 . DOI: 10.13234/j.issn.2095-2805.2026.7.8

参考文献

收起

文献

收起

参考文献引证文献

排序方式：

[1]

Karki U, González-Santini N S, Peng F Z. Effect of gate-oxide degradation on electrical parameters of silicon carbide MOSFETs[J]. IEEE Transactions on Electron Devices, 2020, 67(6): 2544-2552.

[2]

Zhang Qinghao, Zhang Pinjia. A novel model of the aging effect on the ON-state resistance of SiC power MOSFETs for high-accuracy package-related aging evaluation[J]. IEEE Transactions on Industrial Electronics, 2023, 70(9): 9495-9504.

[3]

Farhadi M, Yang Fei, Pu Shi, et al. Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances[J]. IEEE Transactions on Power Electronics, 2021, 36(7): 8308-8324.

[4]

Xie Minghang, Sun Pengju, Wang Kaihong, et al. Online gate-oxide degradation monitoring of planar SiC MOSFETs based on gate charge time[J]. IEEE Transactions on Power Electronics, 2022, 37(6): 7333-7343.

[5]

Naghibi J, Mohsenzade S, Mehran K, et al. Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs[J]. IEEE Transactions on Power Electronics, 2023, 38(1): 1079-1091.

[6]

Moazami A, Mohsenzade S, Akbari K. An online condition monitoring method for IGBT gate oxide degradation based on the gate current in miller plateau[J]. IEEE Transactions on Industrial Electronics, 2023, 70(9): 9505-9514.

[7]

魏伟伟, 张杨, 徐国卿. IGBT模块栅氧老化机理分析与表征方法研究[J]. 电源学报, 2021, 19(6): 171-178. Wei Weiwei, Zhang Yang, Xu Guoqing. Research on mechanism analysis and characterization method for gate oxygen degradation of IGBT module[J]. Journal of Power Supply, 2021, 19(6): 171-178. (in Chinese)

[8]

Cai Yumeng, Chen Cong, Zhao Zhibin, et al. Characterization of gate-oxide degradation location for SiC MOSFETs based on the split C-V method under bias temperature instability conditions[J]. IEEE Transactions on Power Electronics, 2023, 38(5): 6081-6093.

[9]

于圣旭, 王智强, 辛国庆, 等. 基于栅极参考电压的SiC MOSFET栅极氧化物健康状态在线监测方法[J]. 电源学报, 2024, 22(3): 248-257. Yu Shengxu, Wang Zhiqiang, Xin Guoqing, et al. Online monitoring method for SiC MOSFET gate-oxide health status based on gate reference voltage[J]. Journal of Power Supply, 2024, 22(3): 248-257. (in Chinese)

[10]

李豪, 成芮俊杰, 向大为, 等. 栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究[J]. 中国电机工程学报, 2024, 44(9): 3656-3664, I0027. Li Hao, Cheng Ruijunjie, Xiang Dawei, et al. Effect of gate oxide degradation on SiC MOSFET gate turn-on oscillation[J]. Proceedings of the CSEE, 2024, 44(9): 3656-3664, I0027. (in Chinese)

[11]

Yang Yanyong, Zhang Pinjia. A novel bond wire fault detection method for IGBT modules based on turn-on gate voltage overshoot[J]. IEEE Transactions on Power Electronics, 2021, 36(7): 7501-7512.

[12]

Mandeya R, Chen Cuili, Pickert V, et al. Gate-emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules[J]. IEEE Transactions on Power Electronics, 2019, 34(9): 9158-9169.

[13]

Chu Chengpeng, Dong Chao, Du Mingxing, et al. Aging monitoring of bond wires based on differential mode conducted interference spectrum for IGBT module[J]. IEEE Transactions on Electromagnetic Compatibility, 2021, 63(4): 1274-1283.

[14]

柴育恒, 葛兴来, 张林林, 等. 一种基于开通栅极电压的新型IGBT键合线老化监测方法[J]. 中国电机工程学报, 2024, 44(1): 244-254. Chai Yuheng, Ge Xinglai, Zhang Linlin, et al. A novel bonding wires aging monitoring method for IGBT based on the turn-on gate voltage[J]. Proceedings of the CSEE, 2024, 44(1): 244-254. (in Chinese)

[15]

Yang Jianxiong, Che Yanbo, Guo Xiaojiang, et al. In situ monitoring chip failure in multichip IGBT modules using turn-on delay time extracted from auxiliary emitter voltage[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024, 12(3): 2912-2922.

[16]

Mamee T, Lou Zaiqi, Hata K, et al. Estimating of IGBT bond wire lift-off trend using convolutional neural net-work (CNN)[J]. IEEE Access, 2024, 12: 96936-96945.

[17]

Liu Jingcun, Zhang Guogang, Chen Qian, et al. In situ condition monitoring of IGBTs based on the miller plateau duration[J]. IEEE Transactions on Power Electronics, 2019, 34(1): 769-782.

[18]

Costa F, Magnon D. Graphical analysis of the spectra of EMI sources in power electronics[J]. IEEE Transactions on Power Electronics, 2005, 20(6): 1491-1498.

[19]

Hao Bin, Peng Cheng, Tang Xinling, et al. Calculation and analysis for spectrum characteristics parameters of switching device for reduced EMI generation[J]. IEEE Transactions on Power Electronics, 2022, 37(5): 5444-5454.

[20]

Sun Pengju, Gong Can, Du Xiong, et al. Condition monitoring IGBT module bond wires fatigue using short-circuit current identification[J]. IEEE Transactions on Power Electronics, 2017, 32(5): 3777-3786.

2026年第24卷第7期

PDF下载

引用本文

BibTeX

文章信息

doi: 10.13234/j.issn.2095-2805.2026.7.8

接收时间：2024-08-09
首发时间：2026-10-29
出版时间：2026-07-30

补充材料

相关文章

文章信息

作者

出版历史

收稿日期：2024-08-09
修回日期：2024-10-11
录用日期：2024-10-18

基金

作者信息

天津市新能源电力变换传输与智能控制重点实验室（天津理工大学），天津　300384

通讯作者:

杜明星（1980—　），男，中国电源学会会员，通信作者，博士，教授。研究方向：电力电子器件可靠性。E-mail：dumx@tjut.edu.cn。

参考文献

分享链接

https://castjournals.cast.org.cn/joweb/dyxb/CN/10.13234/j.issn.2095-2805.2026.7.8

分享至

全文二维码

扫描看全文

引用本文

BibTeX

本文的引用情况

2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

关闭全屏

BibTeX
EndNote
RefWorks
TxT